Li ion conducting polymer electrolyte films were prepared based on poly(vinyl alcohol) (PVA) with 5, 10, 15, 20, 25 and 30 wt% lithium iron phosphate (LiFePO4) salt using a solution-casting technique. X-ray diffr...
Li ion conducting polymer electrolyte films were prepared based on poly(vinyl alcohol) (PVA) with 5, 10, 15, 20, 25 and 30 wt% lithium iron phosphate (LiFePO4) salt using a solution-casting technique. X-ray diffraction (XRD) was used to determine the complexation of the polymer with LiFePO4 salt. Differential scanning (DSC) calorimetry was used to determine the melting temperatures of the pure PVA and complexed films. The maximum ionic conductivity was found to be 1.18 × 10−5 S cm−1 for (PVA:LiFePO4) (75:25) film, which increased to 3.12 × 10−5 S cm−1 upon the addition of propylene carbonate (PC) plasticizer at ambient temperature. The Li+ ion transport number was found to be 0.40 for (PVA: LiFePO4) (75:25) film using AC impedance and DC polarization methods. Dielectric studies were performed for these polymer electrolyte films in the frequency range of 10 Hz to 10 MHz at different temperatures. The activation energies of the complexed films were calculated from the dielectric loss tangent spectra and were found to be 0.35, 0.30, 0.27 and 0.28 eV. The cyclic voltammogram (CV) curves of (PVA: LiFePO4) (75:25)+PC film exhibited higher specific capacities than those for other films.
Integral membrane proteins(IMPs) represent over one quarter of the total proteins of various *** IMPs are embedded in the lipid membrane which is essential to maintain the hydrophobic structure and function of *** to ...
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Integral membrane proteins(IMPs) represent over one quarter of the total proteins of various *** IMPs are embedded in the lipid membrane which is essential to maintain the hydrophobic structure and function of *** to date,most applications of IMPs are related to their physiological ***,the hydrophobic structure of IMPs can also be utilized for
ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were character...
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A simulation model about the temperature controlling system of 25kW fuel cell power system(FCPS) which was analyzed by MATLAB/SIMULINK was built. This generates a control variable by the fuzzy control method to drive ...
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In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered wi...
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In order to fabricate AZO/SiO2/p-Si heterojunction device and let it be an absorber of ultraviolet response cell. Zinc oxide (ZnO) thin films doped with aluminum (AZO) were deposited on p-Si(100) substrates covered with silicon dioxide (SiO2) by radio frequency magnetron sputtering. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that the device is a typical tunneling diode for minority carrier and a strong obstructing effect from majority carriers. The potential rectifying behavior and photovoltaic characteristic is present at dark current and weak light illumination, respectively.
It is well known that the superconducting transition temperature (Tc) of cuprate superconductors can be enhanced by varying certain structural and electronic parameters, such as the flatness of the CuO2 planes or thei...
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It is well known that the superconducting transition temperature (Tc) of cuprate superconductors can be enhanced by varying certain structural and electronic parameters, such as the flatness of the CuO2 planes or their doping level. We determine the uniaxial and hydrostatic pressure derivatives of Tc in the structurally simple tetragonal compound HgBa2CuO4+δ near optimal doping. Our results provide experimental evidence for two further methods to enhance Tc: (i) reducing the area of the CuO2 planes, and (ii) increasing the separation of the CuO2 planar groups. Tc is found to couple much more strongly to the ratio c/a of the lattice constants than to the unit cell volume. A comparison with prior results for structurally more complicated cuprates reveals a general trend of uniaxial pressure derivatives with Tc.
Bi25FeO40 powders have successfully been synthesized by simple hydrothermal method. The effect of the concentration of mineralizer and stoichiometry on the prepared samples was investigated. With the UV-Vis spectra, B...
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Bi25FeO40 powders have successfully been synthesized by simple hydrothermal method. The effect of the concentration of mineralizer and stoichiometry on the prepared samples was investigated. With the UV-Vis spectra, Bi25FeO40 powders have a broad absorption band in the range of 400-600 nm and a good visible-light-response ability. Photo-catalytic activity of Bi25FeO40 powders was evaluated by the degradation of methyl violet solution under UV-Vis light irradiation, which is found that Bi25FeO40 is efficient for photo-degradation of the methyl violet due to its own crystal structure.
CCa(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT)heterostructure dielectric thin films, with the same thickness but different arrangement patterns, were prepared by Pechini method. The effects of the heterogeneous interface on the st...
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CCa(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT)heterostructure dielectric thin films, with the same thickness but different arrangement patterns, were prepared by Pechini method. The effects of the heterogeneous interface on the structure and properties have been studied. The results showed that, in nonalternating arrangement films, single perovskite phase can only be obtained in TM heterostructure film, in which CaTiO3 layer has grown on the substrate firstly, and the dielectric properties of this film is εr=47.5, tanδ=0.020 at 1MHz. Comparing with non-alternating arrangement film, all alternating arrangement films have single perovskite phase, and the existing of heterogeneous interface enhanced the dielectric properties of TMM and MMT alternating arrangement films by introducing space charges. And the dismatch between CMN and CT layers can avoid the harmful particle forming, improve crystallization and surface morphology, and keep the dielectric loss at a low level. At 1MHz, the dielectric constant (εr) of TMM and MMT films are 66.3 and 63.6, while both dielectric loss (tanδ) are 0.021.
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