A one-dimensional multi-layer heat conduction model of CRAM is developed based on its memory principle. According to the read/write requirement of memory cell, and to the condition of its thermal compatibility with CM...
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A one-dimensional multi-layer heat conduction model of CRAM is developed based on its memory principle. According to the read/write requirement of memory cell, and to the condition of its thermal compatibility with CMOS circuits, the critical parameters are fixed on. The temperature profiles are portrayed by solving the heat conduction equation with the reasonable boundary conditions. Under the limitation of the critical parameters, we adjust the parameters of cell structure, use heating layer, and then develop the structural model of CRAM memory cell which not only meet the need of read/write function of memory cell but for the first time achieve the thermal compatibility of CRAM memory cell with CMOS circuits.
Mo/SiO2 composites with different mass compositions were sintered by spark plasma sintering (SPS) technique. The mechanism of sintering and densifications were studied and the relationship between the distribution of ...
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Mo/SiO2 composites with different mass compositions were sintered by spark plasma sintering (SPS) technique. The mechanism of sintering and densifications were studied and the relationship between the distribution of Mo in composites and the electrical property was discussed. The result indicated that there was no reaction between Mo and SiO2;the composites are mechanically mixed instead. Partly softened SiO2 and the particles of Mo filling the hole facilitated the compact of Mo/SiO2 composites. When the mass composition of Mo was less than 35%, the particles of Mo dispersed individually in SiO2 and the composite was an insulator;when that exceeds 40%, the composite was a conductor due to the connection of the particles of Mo.
Ti2AlC bulk material was synthesized by hot pressing using elemental powder mixture of Ti, Al and active carbon. X-ray diffraction (XRD) in different temperature of hot pressing was used to determine the phase composi...
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Ti2AlC bulk material was synthesized by hot pressing using elemental powder mixture of Ti, Al and active carbon. X-ray diffraction (XRD) in different temperature of hot pressing was used to determine the phase composition and scanning electron microscope (SEM) was observed to investigate the microstructure of samples synthesized respectively. Results show that high purity Ti2AlC bulk material was synthesized by hot pressing elemental powder mixture of 2.0 Ti/1.0 Al/1.0 C at 1500 °C for 60 minutes, in which little TiC and Ti3AlC2 existed as secondary phases. According to the results of thermodynamics calculation, for Ti, Al and C system the most stable compound in thermodynamics was TiC. Moreover, the formation of Ti3AlC2 during the synthesizing progress of Ti2AlC was explained.
Nanocrystalline WC-Co composite powder and coated tungsten diamond by using vacuum vapor deposition were consolidated by the spark plasma sintering （SPS） process to prepare diamond-enhanced WC-Co cemented carbide co...
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Nanocrystalline WC-Co composite powder and coated tungsten diamond by using vacuum vapor deposition were consolidated by the spark plasma sintering （SPS） process to prepare diamond-enhanced WC-Co cemented carbide composite materials. The interface microstructures between coated tungsten diamond and WC-Co cemented carbide matrix were investigated by scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDXS）. The results showed that there is a transitional layer between the diamond and the matrix, in which the carbon content is 62.97wt.%, and the content of cobalt in the transitional zone is 6.19wt.%; the content of cobalt in the WC-Co cemented carbide matrix is 6.07wt.%, in which the carbon content is 15.95wt.%, and the content of cobalt on the surface of diamond is 7.30wt.%, in which the carbon content is 80.38wt.%. The transitional zone prevents the carbon atom of the diamond from spreading to the matrix, in which the carbon content does coincide with the theoretical value of the raw nanocomposite powders, and the carbon content forms a graded distribution among the matrix, transitional zone, and the surface of diamond; after the 1280℃ SPS consolidated process the diamond still maintains a very good crystal shape, the coated tungsten on the surface of the diamond improves thermal stability of the diamond and increases the bonding strength of the interface between the diamond and the matrix.
A series of new microwave dielectric ceramics Ba3-nLa1+nTinNb3-nO12 (n=0,1,2) were prepared in the BaO-La2O3-TiO2-Nb2O5 system by high temperature solid-state reaction route. The phase and structure of the ceramics we...
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A series of new microwave dielectric ceramics Ba3-nLa1+nTinNb3-nO12 (n=0,1,2) were prepared in the BaO-La2O3-TiO2-Nb2O5 system by high temperature solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction, scanning electron microscope, and microwave dielectric properties measurements. These samples were identified as single phase and adopted A4B3O12-type cation-deficient hexagonal perovskite structure, which can be described as consisting of identical perovskite-like blocks, three corner-sharing BO6 octahedra thick, separated by layers of vacant octahedral. These ceramics have high dielectric constants in the range of 48-42, high quality factors (Q×f) up to 38 000 GHz, and low temperature coefficient of resonant frequencies (τf) in the range of (-40-+6)×10-6℃-1. With increasing content of La and Ti, the dielectric constants slightly decrease butτf gradually increases.
Thermogravimetry (TG-DTA) was used to study the heat resistance characteristics and curing heat decomposition kinetics of ATPU/epoxy resin system. Results showed that the decomposition temperature of the cured ATPU-2/...
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Thermogravimetry (TG-DTA) was used to study the heat resistance characteristics and curing heat decomposition kinetics of ATPU/epoxy resin system. Results showed that the decomposition temperature of the cured ATPU-2/E-44 was higher than that of ATPU-1.5/E-44. The calculation results of decomposition reaction showed that the cured system of ATPU-2/E-44 had better heat resistance, the reaction decomposition active energy of ATPU-2/E-44 system was higher than that of ATPU-1.5/E-44.
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mob...
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A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer (SiO2) thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping a low equivalent oxide thickness. Simulated results agree reasonably with experimental data.
WC- 10Co nanocomposite powder produced by spray pyrolysis-continuoas reduction and carbonization technology was used, and the vacuum sinteriag plus sinterhip process was cdopted to prepare ultrafine WCCo cemented carb...
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WC- 10Co nanocomposite powder produced by spray pyrolysis-continuoas reduction and carbonization technology was used, and the vacuum sinteriag plus sinterhip process was cdopted to prepare ultrafine WCCo cemented carbide. The microstructure, grain size, porosity, density, Rockwell A hardness （ HRA ）, transverse rupture strength （ TRS ） , saturated magnetization and coercivity force were studied. The experimental results show that average grain size of the sample prepared by vacuum sintering plas sinterhip technology was about 420 nm, transverse rupture strength was more than 3460 MPa, and Rockwell A hardness of sintered specimen was more than 92.5. Ultrafine WC- 10Co cemented carbide with high strength and high hardness is obtained.
Yttrium-filled sku, tterudites Yy Fex Co4-x Sb12 （ Y =0- 0. 40 ） were synthesized. The effect of Y filling fraction on thermoelectric properties of Yy Fex Co4-x Sb12 was investigated. All samples showed p-type condu...
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Yttrium-filled sku, tterudites Yy Fex Co4-x Sb12
（ Y =0- 0. 40 ） were synthesized. The effect of Y filling fraction on thermoelectric properties of Yy Fex Co4-x Sb12
was investigated. All samples showed p-type conduct. The electrical conductivity decreased with increasing filling fraction y. The Seebeck coefficient inreased with increasing temperature. The lattice thermal conductivity decreased with increasing filling fraction y and showed the minimum value at a certain filling fraction y = 0.3. The effect of different filling atoms M（ M： Ba, Ce, Y） on the lattice thermal conductivity of MyFexCo4-xSb12 was discussed. The maximum ZT value of O. 7 was obtained for Y0.06 Fe0.7 Co3.3 Sb12 at 750 K.
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