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Seamless integration of RZ-DPSK-DWDM optical links with MIMO-OFDM system for 4th generation wide-area coverage mobile communication

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2011 International Conference on Future Wireless Networks and Information systems, ICFWI 2011

作者： Shao, Yufeng Wang, Yuanquan Chi, Nan State Key Lab. of ASIC and System Department of Communication Science and Engineering Fudan University Shanghai 200433 China

ISBN: (纸本)9783642273223

We introduce 10×10Gb/s RZ-DPSK-DWDM links in the architecture integration of MIMO-OFDM system. The optical communication performance and wireless communication performance is analyzed in the integrated system. The long distance transmission for RZ-DPSK WDM is done, and the demodulated RZ-DPSK signal is transformed to the binary data, which is given to MIMO-OFDM-QPSK wireless communication system. Two MIMO-OFDM-QPSK wireless system is designed with two transmit antennas and one receive antenna and four transmit antennas and one receive antenna. The BER performance of almost 10-3 is achieved at SNR of 11dB with four transmit antennas and one receive antenna which is better as compared to two transmit antennas and one receive antenna. The results prove that seamless integration of RZ-DPSK-DWDM optical links with MIMO-OFDM system is suitable to simultaneously offer higher receiver performance and simplify system configuration for 4th generation wide-Area coverage mobile communication. © 2012 Springer-Verlag GmbH.

关键词： Orthogonal frequency division multiplexing

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A Novel Low Power Wide Supply Voltage Range CMOS Temperature Sensor with -0.2/0.5℃ Error from -20℃ to 60℃

A Novel Low Power Wide Supply Voltage Range CMOS Temperature...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Gang Chen Xiaoyong Xue Qing Dong Fanjie Xiao Hao Chen Yinyin Lin ASIC and System State Key Lab Fudan University

This paper proposes a quite accurate CMOS temperature sensor designed and developed for monitoring enviromental *** sensor uses subthreshold MOSFET to measure *** circuit has been implemented by IO thick-oxide MOS devices in 0.13um standard logic process and occupies a silicon area of 37 ×*** performance of the sensor is highly linear and the temperature error is merely -0.2 ℃/0.5℃ using two-point calibration from -20℃ to 60 ℃.The sensor can operate under voltage from 1.8V to 3.6V with high *** results show a responsivity of 3.9 mV/℃ and power consumption of 1.3uW@1.8V.

关键词： A Novel Low Power Wide Supply Voltage Range CMOS Temperature Sensor with Error from to 60 Sensor

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Wearable Wireless system with Embedded Real-time Fall Detection Logic for Elderly Assisted Living Applications

Wearable Wireless System with Embedded Real-time Fall Detect...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Wenxu Bao Yun Chen Xiaoyang Zeng The State-Key Lab of ASIC and System Fudan University

ISBN: (纸本)9781467324748

In recent years,the old people's accidental falling down has become a serious problem,which caused thousands of death of elderly each *** this article,we designed a falling down detection system to enhance the security of the *** is a Wireless sensor system which contains a wearable terminal and a coordinator,both of which communicate with ZigBee *** wearable terminal detects people's instantaneous acceleration and transmits the signal to coordinator and PC for further *** determine whether the falling action happens,we designed a fall detection algorithm by exploring the 3D-acceleration difference between falling down and ADL(activies of daily living,such as walk,sit down).So the system could judge the fall action in high rate of accuracy.

关键词： Wearable Wireless system with Embedded Real-time Fall Detection Logic for Elderly Assisted Living Applications

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Conduction Mechanism of Self-Rectifying n~+Si-HfO_2-Ni RRAM

Conduction Mechanism of Self-Rectifying n~+Si-HfO_2-Ni RRAM

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International Conference on asic

作者： D.Y. Lu X.A. Tran H.Y. Yu D.M. Huang Y.Y. Lin S.J. Ding P.F. Wang Ming-Fu Li State Key Lab ASIC and System Fudan University Shanghai China School of Electrical and Electronic Engineering Nanyang Technological University Singapore South University of Science and Technology of China Shen Zhen China

Comprehensive experimental I-V data for the self-rectifying n~+Si-HfO_2-Ni RRAMs in the temperature range 160-300K are provided. By analyzing these data, the following conclusions are obtained: (1) the current in the initial state (I) of the fresh devices before forming process is conducted uniformly through the whole cross section area of the dielectric rod, while the low resistance state (LR) current after set process and the high resistance state (HR) current after reset process are conducted through conduction filament (CF) in the dielectric, in average in few of 10~4 μm~2 per CF. (2) The LR current has a high current component appeared only when V>+0.6V, with ohmic like I-V relationship and weak temperature dependence, mainly reflecting the self-rectifying property of the RRAM. All other low current LR component and HR currents appear at both bias polarity and are highly temperature dependent with activation energy E_a. There are three different kinds of barriers causing the temperature dependence of LR and HR currents, and the rectifying property of LR. The Schottky like barrier between the electrode and dielectric, the multi phonon trap assisted tunneling barrier between trap to electrode and trap to trap respectively, and the Si to deep trap capture barrier through multi phonon emission. (3) Using the recently reported density of states results of HfO_2 grain boundary associated with high and low concentrations of oxygen vacancy V_O~0, and different kind of barriers stated in (2), all experimental data are explained in a natural and unified way.

关键词： RRAM different kind HR

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H.264 Decoder on A 16-Core Processor with Shared-Memory and Massage-Passing Communications

H.264 Decoder on A 16-Core Processor with Shared-Memory and ...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Zheng Yu Jiajie Zhang Ruijin Xiao Zhiyi Yu Xiaoyang Zeng State Key Lab of ASIC and System Fudan University

This paper presents an implementation of H.264 decoder on a 16-core ***-core architecture emerges as a good solution to tackle with substantially increasing computation complexity in media applications.A dramatic speedup can be achieved utilizing task-level, thread-level and data-level *** the core number increases,the inter-core communications draws more *** integrate both shared-memory and massage-passing inter-core communications in mapping H.264 ***,our approach achieves good energy *** realized H.264 decoder with throughput of 30fps@720p consumes 506mW when the processor runs at 750MHz with voltage supply of 1.2V.

关键词： H.264 Decoder on A 16-Core Processor with Shared-Memory and Massage-Passing Communications

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A GPU-based high-throughput image retrieval algorithm 5

A GPU-based high-throughput image retrieval algorithm

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5th Workshop on General-Purpose Computation on Graphics Processing Units, GPGPU-5 - Held in Cooperation with ACM ASPLOS XVII

作者： Zhu, Feiwen Chen, Peng Yang, Donglei Zhang, Weihua Chen, Haibo Zang, Binyu State Key Lab. of ASIC and System Fudan University China Parallel Processing Institute Fudan University China Architecture Key Lab. Institute of Computing Technology Chinese Academy of Sciences China

ISBN: (纸本)9781450312332

With the development of Internet and cloud computing, multimedia data, such as images and videos, has become one of the most common data types being processed. As the scale of multimedia data being still increasing, it is vitally important to efficiently extract useful information from such a huge amount of multimedia data. However, due to the complexity of the core algorithms, multimedia retrieval applications are not only data intensive but also computationally intensive. Therefore, it has been a major challenge to accelerate the processing speed of such applications to satisfy the real-time requirement. As Graphic Processing Unit (GPU) has entered the general-propose computing domain (GPGPU), it has become one of the most popular accelerators for the applications with real-time requirements. In this paper, we parallelize a widely-used image retrieval algorithm called SURF on GPGPU, which is the core algorithm for many video and image retrieval applications. We first analyze the parallelism within SURF to guarantee that there are sufficient tasks being mapped to the large-scale computation resources in GPGPU. We then exploit some inherent GPGPU characteristics, such as 2D memory, to further boost the performance. Finally, we provide some optimization to the cooperation between CPU and GPGPU, which is generally ignored in previous designs. Experimental results show that our parallelization and optimization achieve a throughput of 340.5 frames/s on a NVIDIA GTX295 GPGPU, which is 15X faster than the maximal optimized CPU version. Compared to CUDA SURF, a state-of-the-art parallelization of SURF on GPGPU, our system achieves a speedup by a factor of 2.3X. © 2012 ACM.

关键词： Graphics processing unit

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Cover Picture: Resistance-Switchable Graphene Oxide–Polymer Nanocomposites for Molecular Electronics (ChemElectroChem 3/2014)

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ChemElectroChem 2014年第3期1卷 477-477页

作者： Prof. Dr. Gang Liu Prof. Dr. Yu Chen Prof. Dr. Run-Wei Li Dr. Bin Zhang Prof. Dr. En-Tang Kang Cheng Wang Dr. Xiaodong Zhuang Key Lay for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology Shanghai 200237(PR China) CAS Key Lab of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201(PR China) The State Key Laboratory of ASIC & System Fudan University 220 Handan Road Shanghai 200433 (PR China) Yu Chen Key Lay for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology Shanghai 200237(PR China) Run-Wei Li CAS Key Lab of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201(PR China) En-Tang Kang Department of Chemical and Biomolecular Engineering National University of Singapore Kent Ridge 119260 (Singapore) Department of Chemical and Biomolecular Engineering National University of Singapore Kent Ridge 119260 (Singapore)

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Resistance-Switchable Graphene Oxide–Polymer Nanocomposites for Molecular Electronics

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ChemElectroChem 2014年第3期1卷 478-478页

The front cover artwork is provided by Prof. Dr. Yu Chen and his co-workers. The image represents how deliberately designed, solution-processable, and electroactive polymer-functionalized graphene-oxide nanosheets can be reversibly switched ON and OFF for the development of next-generation nonvolatile information-storage applications. Read the full text of the article at 10.1002/celc.201300158 .

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A Monolithic lab-on-a-Chip for Electrochemical Detection

A Monolithic Lab-on-a-Chip for Electrochemical Detection

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Jianfeng Chen Yuhua Yu Sheng Yang Shih-Kang Fan Jia Zhou ASIC and System State Key Lab Department of MicroelectronicsFudan University Department of Mechanical Engineering National Chiao Tung University

This paper reports a novel monolithic lab-on-a-chip （LOC）with an electrochemical system embedded in an electrowetting on dielectric（EWOD）microfluidic device for the first *** fabrication process is compatible with IC *** chip could not only merge and transport droplets successfully,but show good electrochemical responses of glucose and glucose oxidase with the sensitivity of 0.028mA/mM and the statistic adjust R-square of 0.9549.

关键词： Microfluidics Sugar Electrodes Fabrication Gold lab-on-a-chip Dielectrics

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A novel method for accurate measurement and decoupling of SRAM standby leakage

A novel method for accurate measurement and decoupling of SR...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2012

作者： Dong, Qing Ma, Yanan Chen, Hao Li, Hui Yu, Jiang Liu, Ningxi Jian, Wenxiang Xue, Xiaoyong Chen, Lele Wang, Jianping Kim, Jeonggi Yu, Shaofeng Wu, Jingang Lin, Yinyin ASIC and System State Key Lab Fudan University Shanghai 201203 China Technology Development Center Semiconductor Manufacturing International Corp. Shanghai 201203 China

ISBN: (纸本)9781467324724

A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I-sub), gate leakage (I-gate) and junction leakage (I-junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random variations. The front-end SRAM array layout is kept original to preserve actual physical environment. The method is verified in SMIC 65nm technology. The data of I-sub, I-gate and I-junc of pull-down (PD), pull-up (PU) and pass-gate (PG) transistor are collected for process optimization to reduce standby power. © 2012 IEEE.

关键词： Optimization

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