Dimensioning wireless sensor networks requires formal methods to guarantee network performance and cost in any conditions. Based on network calculus, this paper presents a deterministic analysis method for evaluating ...
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The electrical characteristics of Ti/p-Si Ge contacts with Ti thicknesses of 3nm and 5nm have been investigated in this paper. Ti N was used as a cap layer on Ti. It is observed that as Ti film becomes thinner, Ti/pSi...
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ISBN:
(纸本)9781467397209
The electrical characteristics of Ti/p-Si Ge contacts with Ti thicknesses of 3nm and 5nm have been investigated in this paper. Ti N was used as a cap layer on Ti. It is observed that as Ti film becomes thinner, Ti/pSi Ge contact resistivity(ρ) increases, but its Schottky barrier height(SBH) decreases, which does not coincide with the regular ρc-SBH dependence. Using Ti N/p-Si Ge as a control sample, it is concluded that when Ti film is thinned down to nm scale, the contact property is strongly influenced by Ti N cap layer.
The origin of the on-state current (Ion) difference between dopant-segregated Schottky (DSS) source/drain MOSFET and conventional MOSFET with 20nm channel length is investigated by device simulation. The simulation re...
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An Efficient and flexible implementation of block ciphers is critical to achieve information security *** implementation methods such as GPP,FPGA and cryptographic application-specific asic provide the broad range of ...
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An Efficient and flexible implementation of block ciphers is critical to achieve information security *** implementation methods such as GPP,FPGA and cryptographic application-specific asic provide the broad range of ***,these methods could not achieve a good tradeoff between high-speed processing and *** this paper,we present a reconfigurable VLIW processor architecture targeted at block cipher processing,analyze basic operations and storage characteristics,and propose the multi-cluster register-file structure for block *** for the same operation element of block ciphers,we adopt reconfigurable technology for multiple cryptographic processing units and interconnection *** proposed processor not only flexibly accomplishes the combination of multiple basic cryptographic operations,but also realizes dynamic configuration for cryptographic processing *** has been implemented with0.18μm CMOS technology,the test results show that the frequency can reach 350 *** power consumption is 420 *** kinds of block and hash ciphers were realized in the *** encryption throughput of AES,DES,IDEA,and SHA-1 algorithm is1554 Mbps,448Mbps,785 Mbps,and 424 Mbps respectively,the test result shows that our processor's encryption performance is significantly higher than other designs.
Resistive random access memory(Re RAM) is very attractive for dense storage in embedded applications because of its good scalab.lity and logic-process ***,Re RAM suffers from severe variations in Roff/Ron,endurance an...
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ISBN:
(纸本)9781509066261;9781509066254
Resistive random access memory(Re RAM) is very attractive for dense storage in embedded applications because of its good scalab.lity and logic-process ***,Re RAM suffers from severe variations in Roff/Ron,endurance and retention,which greatly impair its yield and limit its *** the variation sources from material defects,device non-uniformity and manufacturing deviations,circuit inability to provide an ideal write condition also plays an important role in causing above-mentioned ***,the requirement for a uniform and small overshoot compliance current during set(forming) is critical for narrowing the low-resistance state(LRS),*** distribution,while the prior works fail to *** paper proposed a write driver with dynamic uniform and small overshoot compliance current under different set/forming *** benefits of self-adaptive write mode(SAWM) are also reserved for both set and reset *** shows that the compliance current with 5% variation for PVT variations and 3% overshoot is achieved.
This paper presents an improved technology for fabricating the integrated ferroelectric thin film capacitor. Using this technology the contact between PZT ferroelectric thin film and the top platinum electrode was gre...
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A novel method of synchronization for RFID digital receiver is presented in this *** receiver can adaptively demodulate the burst mode receiving date from 31.2kHz to 780.8kHz and achieve fast synchronization and decod...
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ISBN:
(纸本)1424401607
A novel method of synchronization for RFID digital receiver is presented in this *** receiver can adaptively demodulate the burst mode receiving date from 31.2kHz to 780.8kHz and achieve fast synchronization and decoding,which is robust to±2.5%frequency deviation within one *** the power spectrum density of the receiving code is calculated and *** implementation is verified on Altera StratixⅡEP2S60 and the testing results are given.
A wide dynamic range and low noise millimeter waveband all-digital phase-locked loop for the 5G communication system is presented. The digital controlled oscillator (DCO) with four capacitor banks can achieve 25.3% dy...
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Reed-Solomon (RS) codes are widely used in digital communication and storage systems. Unlike usual VLSI approaches, this paper presents a high throughput fully programmable Reed-Solomon decoder on a multi-core process...
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Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The A1/ZrO2/AI cell fabricated in the conventional device process...
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Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The A1/ZrO2/AI cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Ai/ZrO2/AI ceil can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
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