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检索条件"机构=ASIC and System State Key Lab."
1412 条 记 录,以下是81-90 订阅
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Hardware Friendly Algorithm of HR Real Time Stereo Matching for Automatic Drive  13
Hardware Friendly Algorithm of HR Real Time Stereo Matching ...
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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)
作者: Liming Wang Hanrui Wang Yize Jin Xiaoyang Zeng Yibo Fan State Key Lab of ASIC and System Fudan University
Stereo matching is a most challenging topic in artificial intelligence. Local algorithms are better than global ones with lower complexity and higher speed for HD real-time stereo matching. This paper proposes an opti... 详细信息
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Design and simulation of a standing wave oscillator based PLL
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Frontiers of Information Technology & Electronic Engineering 2016年 第3期17卷 258-264页
作者: Wei ZHANG You-de HU Li-rong ZHENG State Key Lab of ASIC & System Fudan University Pack Vinn Excellence Center School of ICTRoyal Institute of Technology (KTH) Eletrum 229
A standing wave oscillator(SWO) is a perfect clock source which can be used to produce a high frequency clock signal with a low skew and high reliability. However, it is difficult to tune the SWO in a wide range of fr... 详细信息
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Fabrication and characteristics of Au/Cr/PZT/Pt/Ti/ZrO2/Si structure for MFMIS FET application  6
Fabrication and characteristics of Au/Cr/PZT/Pt/Ti/ZrO2/Si s...
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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001
作者: Lin, Yinyin Tang, Ting-Ao Lu, Yun Huang, Weining Jiang, Guobao Institute of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China
Metal-ferroelectric-semiconductor (MFS) device is a very hopeful new generation memory device due to its unique properties such as non-volatility, non-destructive read out, high speed, good endurance, radiation tolera...
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The failure mechanism of gate resistance testing for power MOSFET
The failure mechanism of gate resistance testing for power M...
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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology
作者: Pan, Shaohui He, Lunwen Zhang, David Wei Wang, L.K. Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai 200433 China
The vertical DMOS (Double Diffused MOSFET) is widely used in power microelectronics, its switching performance is determined mainly by the gate resistance and the input capacitance. Thus a gate resistance testing tech... 详细信息
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Efficient implementation of OFDM inner receiver on a programmable multi-core processor platform
Efficient implementation of OFDM inner receiver on a program...
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作者: Fan, Wenhua Chen, Chen Chen, Yun Yu, Zhiyi Zeng, Xiaoyang State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 201203 China
This paper presents an efficient implementation of OFDM inner receiver on a programmable multi-core processor platform with CMMB as an application. The platform consists of an array of programmable SIMD processors int... 详细信息
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Investigation of Co/TaN bilayer as Cu diffusion barrier
Investigation of Co/TaN bilayer as Cu diffusion barrier
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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology
作者: Lu, Hai-Sheng Ding, Shao-Feng Ru, Guo-Ping Jiang, Yu-Long Qu, Xin-Ping State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The ... 详细信息
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Dual Multimodal Fusions with Convolution and Transformer Layers for VLSI Congestion Prediction
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and systems 2024年 第6期44卷 2378-2391页
作者: Gu, Hao Wang, Youwen Zheng, Xinglin Peng, keyu Zhu, Ziran Chen, Jianli Yang, Jun The National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing210096 China The State Key Lab of ASIC & System Fudan University Shanghai200433 China
In very large scale integration (VLSI) circuit physical design, precise congestion prediction during placement is crucial for enhancing routability and accelerating design processes. Existing congestion prediction mod... 详细信息
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A systematic error model of high-resolution pipelined analog-to-digital converters
A systematic error model of high-resolution pipelined analog...
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2006 49th Midwest Symposium on Circuits and systems, MWSCAS'06
作者: Tingqian, Chen Bingkun, Yao Jun, Xu Junyan, Ren ASIC and System State Key Lab. Dept. of Microelectronics Fudan University Shanghai China
This work presents a systematic error model of high-resolution pipelined analog-to-digital converters (ADCs) implemented in MATlab. Many errors limit linearity or noise performance of high-resolution ADCs, such as sam... 详细信息
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Preparation and properties of (BaxSr1-x)TiO3thin film for high density DRAM application  6
Preparation and properties of (BaxSr1-x)TiO3thin film for hi...
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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001
作者: Xie, Yu-Han Lin, Yin-Yin Tang, Ting-Ao Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China
BST thin film is thought as the best candidate to substitute for SiO2thin film in high density DRAM application due to its high dielectric constant and low leakage current property. In this paper, (BaxSr1-x)TiO3(x=0-1...
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Fabrication and analysis of super-hydrophobic ZnO film for microfluidic devices
Fabrication and analysis of super-hydrophobic ZnO film for m...
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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology
作者: Yang, Sheng Wang, Yiting Zeng, Xiangyu Zhou, Jia ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China
A simple method of electrochemical deposition was adopted to fabricate super-hydrophobic ZnO surface. A contact angle for water of 159.9° was achieved through teflon 1600 modification. The impacts of deposit time... 详细信息
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