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In-memory computing to break the memory wall

Chinese Physics B 2020年第7期29卷 28-48页

作者： Xiaohe Huang Chunsen Liu Yu-Gang Jiang Peng Zhou State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China School of Computer Science Fudan UniversityShanghai 200433China

Facing the computing demands of Internet of things(IoT)and artificial intelligence(AI),the cost induced by moving the data between the central processing unit(CPU)and memory is the key problem and a chip featured with flexible structural unit,ultra-low power consumption,and huge parallelism will be ***-memory computing,a non-von Neumann architecture fusing memory units and computing units,can eliminate the data transfer time and energy consumption while performing massive parallel *** in-memory computing schemes modified from different memory technologies have shown orders of magnitude improvement in computing efficiency,making it be regarded as the ultimate computing *** we review the state-of-the-art memory device technologies potential for in-memory computing,summarize their versatile applications in neural network,stochastic generation,and hybrid precision digital computing,with promising solutions for unprecedented computing tasks,and also discuss the challenges of stability and integration for general in-memory computing.

关键词： in-memory computing non-volatile memory device technologies crossbar array

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An integrated strategy towards the facile synthesis of core-shell SiC-derived carbon@N-doped carbon for high-performance supercapacitors

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Journal of Energy Chemistry 2021年第5期30卷 512-521页

作者： Zhongya Pang Guangshi Li Xingli Zou Chenteng Sun Conghui Hu Wei Tang Li Ji Hsien-Yi Hsu Qian Xu Xionggang Lu State Key Laboratory of Advanced Special Steel&Shanghai Key Laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China School of Energy and Environment&Department of Materials Science and Engineering City University of Hong KongKowloon Tong 999077Hong KongChina Shenzhen Research Institute of City University of Hong Kong Shenzhen 518057GuangdongChina

Porous active core-shell carbon material with excellent synergistic effect has been regarded as a prospective material for ***,we report an integrated method for the facile synthesis of carbide-derived carbon(CDC)encapsulated with porous N-doped carbon(CDC@NC)towards highperformance ***(PDA)as nitrogen and carbon sources was simply coated on SiC nanospheres to form SiC@PDA,which was then directly transformed into CDC@NC via a onestep molten salt electro-etching/in-situ doping *** synthesized CDC@NC with hierarchically porous structure has a high specific surface area of 1191 m^(2) g^(-1).The CDC core and NC shell are typical amorphous carbon and more ordered N-doped carbon,*** from its unique dual porous structures,the CDC@NC demonstrates high specific capacitances of 255 and 193 F g^(-1) at 0.5 and20 A g^(-1),*** reaction mechanism of the electro-etching/in-situ doping process has also been investigated through experimental characterizations and theoretical density functional theory *** is suggested that the molten salt electro-etching/in-situ doping strategy is promising for the synthesis of active core-shell porous carbon materials with synergistic properties for supercapacitors without the need for additional doping/activation processes.

关键词： Molten salt Electrochemical etching Core-shell structure Porous carbon In-situ nitrogen doping Supercapacitors

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Evaluation of Capacitive Humidity Sensor with Polyimide as Sensing Material

Evaluation of Capacitive Humidity Sensor with Polyimide as S...

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Kang, Xiaoxu Zhong, Xiaolan Chu, Zhenghui Zhang, Min Zhou, Xiaoqiang Qi, Jiming Jia, Qi Zhong, Weifa Liang, Huajian Kang, Xiaozhi Sun, Qingqing Shanghai Ic R&d Center Process Technology Department Shanghai201210 China Zhuhai SiSensor Technology Co. Ltd. Guangdong519080 China School of Microelectronics Fudan University State Key Laboratory of Asic and System Shanghai200433 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, capacitive humidity sensor was fabricated on 200mm CMOS Al Back End of Line (BEOL). Al interconnect layer with metal FORK structure was used as electrode of the capacitor, and polyimide was used as sensing material which was filled into metal FORK electrode structure. After fabrication, its humidity sensing performance was evaluated and compared with standard sensor, including IV curve, capacitance variation with different relative humidity (RH%), recovery time, etc. Based on the measured data, the humidity sensor device based on polyimide material can well meet the humidity measurement requirements. © 2022 IEEE.

关键词： Polyimides

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Multi-Scale Fusion Global Feature Extraction Network for Multi-Modal Medical Image Fusion

SSRN

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SSRN 2023年

作者： Gao, Yuan Ma, Shiwei Liu, Jingjing School of Mechatronic Engineering and Automation Shanghai University Shanghai200444 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai201203 China

This paper proposes a multi-modal medical image fusion method based on multi-scale feature fusion and global feature extraction to alleviate the loss of detailed features and long-distance dependency that are easy to appear in the existing methods. The proposed method designs new multi-scale fusion CNN (Convolutional Neural Networks): two trunks and three branches are used to extract and fuse features at different scales, thus reducing the loss of information in the fusion process. Meanwhile, the proposed method designs a global feature extraction module based on Transformer, which is introduced to extract global features at different scales. The global feature loss is constructed between the fused and the input images to enhance the long-distance dependence and ensure continuity. In addition to global feature loss, the proposed method also designs boundary loss and content loss in the training objectives to retain different kinds of information as much as possible from the source images, thus improving the quality of the fused image in all aspects. Experimental results in open datasets show that the proposed method has better qualitative and quantitative performance than other state-of-the-art methods. © 2023, The Authors. All rights reserved.

关键词： Convolutional neural networks

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P-10.2: Design and Simulation of Integrated Ultraviolet HEMT-LED enabled by P-GaN Selective Epitaxy Growth

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SID Symposium Digest of Technical Papers 2023年第S1期54卷 789-791页

作者： Jingyang Zhang Wei Huang Zhaojun Liu Department of electronic and electrical engineering Southern University of Science and Technology Shenzhen Guangdong China 518055 A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai China 200433

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods.

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Automated and Agile Design of Layout Hotspot Detector via Neural Architecture Search

Automated and Agile Design of Layout Hotspot Detector via Ne...

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Design, Automation and Test in Europe Conference and Exhibition

作者： Zihao Chen Fan Yang Li Shang Xuan Zeng State Key Lab of ASIC & System School of Microelectronics Fudan University Shanghai China China and Shanghai Key Laboratory of Data Science School of Computer Science Fudan University Shanghai China

This paper presents a neural architecture search scheme for chip layout hotspot detection. In this work, hotspot detectors, in the form of neural networks, are modeled as weighted directed acyclic graphs. A variational autoencoder maps the discrete graph topological space into a continuous embedding space. Bayesian Optimization performs neural architecture search in this embedding space, where an architecture performance predictor is employed to accelerate the search process. Experimental studies on ICCAD 2012 and ICCAD 2019 Contest benchmarks demonstrate that, the proposed scheme significantly improves the agility of previous neural architecture search schemes, and generates hotspot detectors with competitive detection accuracy, false alarm rate, and inference time.

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TOTAL: Topology Optimization of Operational Amplifier via Reinforcement Learning

TOTAL: Topology Optimization of Operational Amplifier via Re...

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IEEE International Symposium on Quality Electronic Design

作者： Zihao Chen Songlei Meng Fan Yang Li Shang Xuan Zeng State Key Lab of ASIC & System School of Microelectronics Fudan University Shanghai China China and Shanghai Key Laboratory of Data Science School of Computer Science Fudan University Shanghai China

With ever-increasing design complexity and stringent time-to-market pressure, automated topology synthesis tools for operational amplifiers are required to produce designs meeting different specifications. This paper proposes TOTAL, a reinforcement learning-based topology optimization method for operational amplifiers. We decompose the circuit topology design as a Markov decision process to solve the high dimensionality of the design space, with the three-stage cascode paradigm fixed to avoid meaningless structures. Therefore, starting from a basic behavior-level topology, an agent modifies the circuit step by step. Specifically, this agent mainly adopts a graph neural network to understand each design state, including specifications and the design history, and a convolutional neural network to modify the current topology. Every completed circuit is then simulated and evaluated by a customized reward function to guide the agent in finding qualified circuits, among which only the optimal one ever recorded is mapped to the transistor level for further evaluation. Experimental results show that the trained agent can not only generate high-performance circuits, but also be reusable by transferring to other specifications as a pre-trained model and achieving competitive results.

关键词： Operational amplifiers Circuit topology Network topology Optimization methods Reinforcement learning Markov processes Topology

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High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga_(2)O_(3)

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npj Flexible Electronics 2022年第1期6卷 457-465页

作者： Xiao-Xi Li Guang Zeng Yu-Chun Li Hao Zhang Zhi-Gang Ji Ying-Guo Yang Man Luo Wei-Da Hu David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan University200433 ShanghaiChina National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University200240 ShanghaiChina Shanghai Synchrotron Radiation Facility(SSRF) Zhangjiang LabShanghai Advanced Research Institute&Shanghai Institute of Applied PhysicsChinese Academy of Sciences201204 ShanghaiChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences200083 ShanghaiChina

Deep-ultraviolet(DUV)phototransistors have shown great potential applications in UV imaging,artificial intelligence,and wearable *** a large number of wide bandgap semiconductors,the quasi-two-dimensionalβ-Ga_(2)O_(3) is considered as an ideal candidate for DUV photodetector ***,we report a high responsivity(R)and fully flexible Ta-dopedβ-Ga_(2)O_(3) DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32×10^(6) A/W,a large detectivity of 5.68×10^(14) Jones,a great photo-to-dark current ratio of 1.10×10^(10)%,a high external quantum efficiency of 6.60×10^(8)%,and an ultra-fast response time of~3.50 ***,the flexible Ta-dopedβ-Ga_(2)O_(3) device also displays high reliability and mechanical flexibility that can sustain well after over 1×10^(4) bending ***,high-contrast imaging of UV light was obtained on the flexible DUV detector arrays,which can be efficiently trained and recognized by an artificial neural *** findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexibleβ-Ga_(2)O_(3) DUV phototransistors,providing an inspiration for the future work in artificial intelligence and bionic robot fields.

关键词： transistor responsivity artificial

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Atomic layer deposition-fabricated two-dimensional MoO3-WO3 nanohybrid thin-film electrode for ultrasensitive and interference-free detection of dopamine

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Biosensors and Bioelectronics: X 2023年 15卷

作者： Lopa, Nasrin Siraj Akbari, Mohammad Karbalaei Lu, Hong Liang Zhuiykov, Serge Ghent University Global Campus Incheon21985 Korea Republic of Department of Solid-Sate Science Faculty of Science Ghent University Krijgslaan 281/S1 GhentB-9000 Belgium State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China Fudan Fellow State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Atomically thin two-dimensional (2D) semiconductors and their hybrid electrodes show great promise in the advancement of neural sensors for detecting neurotransmitters either through implantation on the brain's surface or by direct detection in biological fluids. This research demonstrated the fabrication of a sub-10 nm thick 2D MoO3-WO3 heterostructure electrode via atomic layer deposition (ALD) for the first time to detect dopamine (DA). The developed thin-film with uniform surface morphology possessed monoclinic and orthorhombic crystal structures of WO3 and MoO3, respectively, with the presence of oxygen vacancies and their sub-stoichiometric phases. The MoO3-WO3 sensor showed excellent catalytic activity for the interference-free detection of DA by suppressing the redox activity of common interferences, ascorbic acid (AA) and uric acid (UA). The ultra-sensitivity of DA oxidation can be ascribed to the effective electrostatic interaction and chemical coordination between the positively charged DA (at pH 7.0) and the MoO3-WO3. In contrast, the predominant electrostatic repulsive force between the negatively charged AA and UA (at pH 7.0) and the MoO3-WO3 suppressed their electrochemical responses. The sensor showed a nanomolar detection limit (20 nM) and a wide linear range for DA detection, which is highly appropriate for its determination in biological samples. Additionally, the sensor demonstrated excellent electrochemical stability, high reproducibility, and good recoveries of DA determination in diluted human serum samples. © 2023 The Authors

关键词： Atomic layer deposition

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Numerical Simulation of the Radiation Force from Transient Acoustic Fields: Application to Laser-Guided Acoustic Tweezers

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Physical Review Applied 2023年第5期19卷 054057-054057页

作者： Shuhan Chen Qing Wang Qi Wang Jia Zhou Antoine Riaud State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Department of Biomedical Engineering Lund University Ole Römers väg 3 Lund 22363 Sweden ABB Corporate Research Center Baden-Dättwil Switzerland

Using pulsed acoustic waves could provide a superior selectivity for microscale acoustic tweezers. However, the theory for the radiation force of pulsed acoustic waves has only been recently derived and no numerical implementations are available. In this paper, we present a finite-element implementation of this model to simulate the transient acoustic radiation force on small spheres. We use the model to simulate laser-guided acoustic tweezers and optimize their performance. By enabling numerical simulations of the transient radiation force, this work may accelerate the rational design of pulse-based high-selectivity acoustic tweezer devices.

关键词： Acoustic wave phenomena Nonlinear acoustics Ultrasonics Microfluidic devices Acoustic techniques Finite-element method Optical tweezers

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