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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Liu, Enqing Wang, Cui Riaud, Antoine Zhou, Jia Fudan University State Key Laboratory of Asic and System School of Microelectronics Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Digital microfluidics(DMF) represented by electrowetting on dielectrics(EWOD) has a broad application prospect in bioassay, chemical synthesis and drug discovery, but currently EWOD technology faces problems such as wiring bottleneck and complexity of droplet detection circuits. Optoelectrowetting(OEW) addresses the wiring bottleneck issue by using light pattern to control droplets. To date, light patterns have been designed by hand and have only allowed one dimensional manipulation. In this paper, we introduced a method using programmable optical patterns to modulate the electric field distribution on the chip, which realized two dimensional manipulation of droplet on the chip. At the same time, machine learning target detection algorithms YOLOv3 was used to accurately detection of droplets the self-addressing of light patterns. © 2022 IEEE.

关键词： Digital microfluidics

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Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

Increasing the Post Halo Implantation Anneal Temperature for...

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Li, Run-Ling Jiang, Yu-Long School of Microelectronics Fudan University State Key Laboratory of Asic and System Shanghai200433 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

The severe threshold voltage (Vt) roll-off is revealed for PMOSFETs with the embedded SiGe source/drain (eSiGe S/D) when the gate length decreases. The unique non-uniform boron diffusion into the channel region from eSiGe is found to be the main reason, which is intrinsically caused by the sigma-shaped trench. Lowering the growth temperature of eSiGe is widely adopted to solve the Vt roll-off issue but with a very complicated adjustment of eSiGe growth process. Without the change of eSiGe growth process, a post halo implantation anneal at a higher temperature before the S/D trench etching is proposed and demonstrated to be able to effectively improve the Vt roll-off too, providing a new way to suppress short channel effect. © 2022 IEEE.

关键词： Threshold voltage

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A General-Purpose Compiler Design for Instruction-Based AI Accelerator Implementation 15

A General-Purpose Compiler Design for Instruction-Based AI A...

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15th IEEE International Conference on asic, asicON 2023

作者： Wang, Mengxuan Linghu, Yuan Wu, Chang Fudan University State Key Laboratory of ASIC and System Shanghai China Shanghai Fudan Microelectronics Group Co. Ltd. Shanghai China

ISBN: (纸本)9798350312980

With the rapid advancement of deep neural networks, the automatic generation of accelerator design is a very important problem for the deployment of AI applications, especially for edge computation. In this paper, we propose a general purpose compiler design for instruction-based CNN accelerator design. Our compiler incorporates network pruning and quantization capabilities for better performance. CDFG-based layer fusion and scheduling are used for heterogeneous computing with consideration of data transformation and synchronization between CPU and accelerator. A device file is used to define the instruction set and data space so that our compiler supports various accelerator designs uniformly. We used our compiler to implement VGG16 and yolo2 in FPGAs and achieved better performance than existing designs. © 2023 IEEE.

关键词： Accelerator Compiler Instruction Scheduling

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Integration Technology of Micro-LED for Next-Generation Display

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Research 2023年第2期2023卷 389-413页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng David WeiZhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai lnstitute of Inteligent Electronics&SystemsSchoolof MicroelectronicsFudan UniversityShanghai 200433China Jia Shan Fudan Institute jaxingZhejang Province 314100China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China

Inorganic micro light-emitting diodes(micro-LEDs)based on II-V compound semiconductors have been widely studied for self-emissive *** chips to applications,integration technology plays an indispensable role in micro-L... 详细信息

关键词： LED diodes LEDs

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An artificial neural network chip based on two-dimensional semiconductor

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Science Bulletin 2022年第3期67卷 270-277页

作者： Shunli Ma Tianxiang Wu Xinyu Chen Yin Wang Hongwei Tang Yuting Yao Yan Wang Ziyang Zhu Jianan Deng Jing Wan Ye Lu Zhengzong Sun Zihan Xu Antoine Riaud Chenjian Wu David Wei Zhang Yang Chai Peng Zhou Junyan Ren Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan UniversityShanghai 200433China Shenzhen Sixcarbon Technology Shenzhen 518106China School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina

Recently,research on two-dimensional(2D)semiconductors has begun to translate from the fundamen-tal investigation into rudimentary functional *** this work,we unveil the first functional MoS2 artificial neural network(ANN)chip,including multiply-and-accumulate(MAC),memory and activation function *** MoS2 ANN chip is realized through fabricating 818 field-effect transistors(FETs)on a wafer-scale and high-homogeneity MoS2 film,with a gate-last process to realize top gate structured FETs.A 62-level simulation program with integrated circuit emphasis(SPICE)model is utilized to design and optimize our analog ANN *** demonstrate a practical application,a tactile digit sensing recognition was demonstrated based on our ANN *** training,the digit recognition rate exceeds 97%.Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale inte-grated circuits,but also paves the way for its future application in AI computation.

关键词： MoS_(2) Two-dimensional(2D)FETs Artificial neural network(ANN) Multiply-and-accumulate(MAC) Circuits

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Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

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Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier Contact resistance

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Polarization-induced photocurrent switching effect in heterojunction photodiodes

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Nano Research 2023年第4期16卷 5503-5510页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng Yu-Chun Li Xiao-Xi Li Dong Li Chao Shen Nan Chi Boon S.Ooi David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Key Laboratory for Information Science of Electromagnetic Waves Department of Communication Science and EngineeringFudan UniversityShanghai 200433China Photonics Laboratory Division of ComputerElectricaland Mathematical Sciences and EngineeringKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in *** photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic ***,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric *** introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V *** particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 *** device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,*** particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.

关键词： GaN heterostructure ultraviolet(UV)photodiodes bipolar photocurrent optical logic device

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Fully sprayed MXene-based high-performance flexible piezoresistive sensor for image recognition

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Nano Materials Science 2024年第1期6卷 77-85页

作者： Zhi-Dong Zhang Xue-Feng Zhao Qing-Chao Zhang Jie Liang Hui-Nan Zhang Tian-Sheng Zhang Chen-Yang Xue Key Laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education North University of ChinaTaiyuan030051People's Republic of China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai200433People's Republic of China Shanxi Hosipital of Acupuncture and Moxibustion Taiyuan030006People's Republic of China

High-performance flexible pressure sensors provide comprehensive tactile perception and are applied in human activity monitoring,soft robotics,medical treatment,and human-computer ***,these flexible pressure sensors require extensive nano-architectural design and complicated manufacturing and are ***,a highly sensitive,flexible piezoresistive tactile sensor is designed and fabricated,consisting of three main parts:the randomly distributed microstructure on T-ZnOw/PDMS film as a top substrate,multilayer Ti_(3)C_(2)-MXene film as an intermediate conductive filler,and the few-layer Ti_(3)C_(2)-MXene nanosheetbased interdigital electrodes as the bottom *** MXene-based piezoresistive sensor with randomly distributed microstructure exhibits a high sensitivity over a broad pressure range(less than 10 kPa for 175 kPa^(-1))and possesses an out-standing permanence of up to 5000 ***,a 16-pixel sensor array is designed,and its potential applications in visualizing pressure distribution and an example of tactile feedback are *** fully sprayed MXene-based pressure sensor,with high sensitivity and excellent durability,can be widely used in,electronic skin,intelligent robots,and many other emerging technologies.

关键词： Piezoresistive sensor Ti_(3)C_(2)-MXene T-ZnOw/PDMS film Randomly distributed microstructure

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A Fast and Resource-efficient GSOP Implementation for Optical Coherent Receivers 16

A Fast and Resource-efficient GSOP Implementation for Optica...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Zhang, Hongyi He, Siqi Lin, Liyu Chen, Yun Zeng, Xiaoyang Fudan University The State Key Lab of Asic & System Department of Microelectronics Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In-phase/quadrature(I/Q) imbalance compensation is an important procedure in optical coherent systems, and the Gram-Schmidt orthogonalization procedure (GSOP) is one of the most widely used compensation algorithms. However, the division and square-root operations consume a lot of hardware resources, limiting the speed of FPGA implementation. This paper proposes a fast and resource-efficient GSOP implementation by converting square-root and division operations into linear fitting. We introduce the Newton iteration method to compensate for the accuracy degradation. The FPGA implementation shows that the throughput of the 128-way-parallel GSOP is up to 100Gbps at the frequency of 392MHz. © 2022 IEEE.

关键词： Iterative methods

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A High Throughput Fully Parallel FFT with CSD Constant Multiplier 16

A High Throughput Fully Parallel FFT with CSD Constant Multi...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： He, Siqi Zhang, Hongyi Lin, Liyu Chen, Yun Zeng, Xiaoyang Fudan University The State Key Lab of Asic & System Department of Microelectronics Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper presents a fully parallel FFT architecture. In order to build hardware-efficient rotators, constant twiddle factors are converted into Canonical Signed Digit (CSD) representation to facilitate the implementation of rotators as shift-and-add operations. In addition, the word length of input and twiddle factors are reduced to meet the accuracy requirement, which further reduces the resource overhead and improves throughput. Experimental results show that the maximum clock frequency of the proposed 128-point fully parallel FFT architecture is close to 650MHz, and the throughput is up to 83GS/s. © 2022 IEEE.

关键词： Fast Fourier transforms

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