Dear editor,The static random-access memory (SRAM)-based field programmable gate arrays (FPGAs) mainly composed of extensive configurable logic blocks (CLBs),high-speed embedded memories (BRAMs),and a set of programma...
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Dear editor,The static random-access memory (SRAM)-based field programmable gate arrays (FPGAs) mainly composed of extensive configurable logic blocks (CLBs),high-speed embedded memories (BRAMs),and a set of programmable routing,wires or switch boxes[1,2]are commonly used in avionic and space fields because of their advanced performance and high flexible in-field reprogramming abilities[2].However,the advanced SRAM-based FPGAs are susceptible to radiation effects,
As feature size continues to shrink and light source wavelengths remain unchanged, the optical diffraction effects seriously degrade chip yield. Optical proximity correction (OPC) has become an essential step for chip...
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Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitax...
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This paper develops a thermoelectric cooler (TEC) temperature control system based on the field-programmable gate array (FPGA). Multi-channel analog-to-digital converters (ADCs) acquire temperature data from the tempe...
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Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P- GaN grown by Selective Epita...
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In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed...
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In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four modules for calculating:(ⅰ) elemental chemical potentials,(ⅱ) defect(dopant) formation energies and charge-state transition levels,(ⅲ) defect and carrier densities and(ⅳ) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence(PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy(DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.
Metallic electrodes are essential components of many microfluidic systems. Most often, these systems use alternating voltage to avoid bubble formation by hydrolysis and shortcut the electrical double layer, but also, ...
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We present a general vector instruction extension applicable for both ARM NEON and RISC-V Vector Extension. The extension targets efficient bit-manipulation and can provide considerable speedup for applications in GF(...
We present a general vector instruction extension applicable for both ARM NEON and RISC-V Vector Extension. The extension targets efficient bit-manipulation and can provide considerable speedup for applications in GF(2 m ) such as code-based post-quantum cryptography schemes. The effectiveness of the extension is evaluated by using the custom instructions to optimize the kernel operations in BIKE key-encapsulation schemes. We first innovate vectorized versions of bit-polynomial multiplication and inversion algorithms in GF(2 m ) and propose vector instruction extension. Furthermore, a configurable hardware unit has been proposed to support custom operations of different bandwidths at little cost and constant latency. Both experiments on Xilinx UltraScale+ ZCU104 for ARM and simulations on gem5 for RISC-V have been carried out. Compared to portable C implementation, the result shows a speedup for bit-polynomial multiplication and inversion of up to 13x and 16x in ARM, 13x and 22x in RISC-V respectively.
An on-chip optical delay line with low-loss and compact waveguide configurations is a crucial component for functional photonic integrated circuits, such as optical coherence tomography, optical gyroscopes, and freque...
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Non-volatile Compute-in-Memory (CIM), especially high-speed MRAM CIM, promises to be a solution of “Memory Wall” problem in power-sensitive artificial intelligence edge devices. However, the low resistance and low o...
Non-volatile Compute-in-Memory (CIM), especially high-speed MRAM CIM, promises to be a solution of “Memory Wall” problem in power-sensitive artificial intelligence edge devices. However, the low resistance and low on/off ratio limit the row parallelism and efficiency of MRAM CIM macros. To overcome these challenges, this work proposes the following: 1) a series 3T1MTJ bit-cell CIM architecture; 2) an input-aware and self-generated dynamic reference array; 3) a high-speed readout pipeline circuit. The proposed macro eliminates errors of high Row-Parallel multiply-and-accumulate (MAC) operation with 150 TOPS/W peak energy efficiency simulated using 40nm process and STT-MTJ.
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