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检索条件"机构=ASIC and System State Key Laboratory Department of Microelectronics"
998 条 记 录,以下是81-90 订阅
排序:
AMG: Automated Efficient Approximate Multiplier Generator for FPGAs via Bayesian Optimization
arXiv
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arXiv 2023年
作者: Li, Zhen Zhou, Hao Wang, Lingli State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China
Approximate computing is a promising approach to reduce the power, delay, and area in hardware design for many error-resilient applications such as machine learning (ML) and digital signal processing (DSP) systems, in... 详细信息
来源: 评论
Wafer-Scale Synthesis of WS_(2)Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition
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Research 2021年 第1期2021卷 1424-1432页
作者: Hanjie Yang Yang Wang Xingli Zou Rongxu Bai Zecheng Wu Sheng Han Tao Chen Shen Hu Hao Zhu Lin Chen David W.Zhang Jack C.Lee Xionggang Lu Peng Zhou Qingqing Sun Edward T.Yu Deji Akinwande Li Ji State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China State Key Laboratory of Advanced Special Steel School of Materials Science and EngineeringShanghai UniversityShanghai 200444China Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at AustinAustin78758 TexasUSA
Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/*** this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesize... 详细信息
来源: 评论
Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor
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Nano-Micro Letters 2022年 第12期14卷 310-351页
作者: Lang-Xi Ou Meng-Yang Liu Li-Yuan Zhu David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Yiwu Research Institute of Fudan University Chengbei RoadYiwu City 322000ZhejiangPeople’s Republic of China
With the rapid development of the Internet of Things,there is a great demand for portable gas *** oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely us... 详细信息
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Numerical simulation of the radiation force from transient acoustic fields: Application to laser-guided acoustic tweezers
arXiv
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arXiv 2023年
作者: Chen, Shuhan Wang, Qing Wang, Qi Zhou, Jia Riaud, Antoine State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China
Using pulsed acoustic waves could provide a superior selectivity for microscale acoustic tweezers. However, the theory for the radiation force of pulsed acoustic waves has only been recently derived and no numerical i... 详细信息
来源: 评论
Atomic layer deposited 2D MoS2 atomic crystals:From material to circuit
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Nano Research 2020年 第6期13卷 1644-1650页
作者: Hao Liu Lin Chen Hao Zhu Qing-Qing Sun Shi-Jin Ding Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China
Atomic layer deposition(ALD)can be used for wafer-scale synthesis of 2D *** this paper,a novel,reliable,secure,low-cost,and high-efficiency process for the fabrication of MoS2 is introduced and *** resulting 2D materi... 详细信息
来源: 评论
The Design of a 57-65GHz SPDT Switch with LC Resonant Techniques in 40 nm CMOS Process  9
The Design of a 57-65GHz SPDT Switch with LC Resonant Techni...
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9th IEEE MTT-S International Wireless Symposium, IWS 2022
作者: Sun, An Gu, Junjie Xu, Hao Liu, Weitian Han, Tingting Tian, Mi Zhu, Weiqiang Yan, Na Fudan University State Key Laboratory of Asic & System China Archiwave Microelectronics Co. Ltd. China Nanjing Electronic Equipment Institute China
This paper presents a single-pole double-throw (SPDT), transmit/receive (T/R) switch operating from 57 to 65GHz in 40 nm CMOS process. The SPDT is based on series-shunt transistors circuit with input and output matchi... 详细信息
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A 28-GHz Series-Parallel Combined Doherty Power Amplifier with PBO Efficiency Enhancement in 40nm Bulk CMOS  9
A 28-GHz Series-Parallel Combined Doherty Power Amplifier wi...
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9th IEEE MTT-S International Wireless Symposium, IWS 2022
作者: Gu, Junjie Qin, Haoqi Jin, Guixiang Xu, Hao Liu, Weitian Han, Tingting Tian, Mi Zhu, Weiqiang Yan, Na Fudan University State Key Laboratory of Asic & System China Archiwave Microelectronics Co. Ltd. China Nanjing Electronic Equipment Institute China
In this paper, a series-parallel combined Doherty power amplifier is proposed. The Doherty architecture is adopted for PBO efficiency enhancement. The power-combining structure is applied for the improvement of satura... 详细信息
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A Semi-Floating Gate Transistors In-Memory Computing design with 40.14 TOPS/W for matrix-multiplication with frequently updated weight  14
A Semi-Floating Gate Transistors In-Memory Computing design ...
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14th IEEE International Conference on asic, asicON 2021
作者: Lin, Yukai Wang, Yu Hu, Xianwu Feng, Jiayun Wen, Gan Xiong, Xiankui Tian, Haidong Xie, Yufeng Fudan University State Key Laboratory of Asic and System School of Microelectronics 200433 China
To overcome the memory wall problem, in-memory computing (IMC) is proposed to accelerate matrix multiplication. While existing IMC designs encounter problems in scenes where weight updates frequently because of long l... 详细信息
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Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications  14
Intra-array Non-Idealities Modeling and Algorithm Optimizati...
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14th IEEE International Conference on asic, asicON 2021
作者: Zhao, Chenyang Fang, Jinbei Jiang, Jingwen Guo, Zhiwang Xue, Xiaoyong Zeng, Xiaoyang Fudan University State Key Laboratory of ASIC and System School of Microelectronics Shanghai China
In recent years, Computing-in-Memory (CIM) has shown attractive advantages over CPU/FPGA/asic in terms of area, energy efficiency and latency for neural network acceleration in edge applications. Among them, RRAM-base... 详细信息
来源: 评论
HD SRAM bitcell size shrink beyond 7nm node by CFET without EUV  5
HD SRAM bitcell size shrink beyond 7nm node by CFET without ...
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5th International Workshop on Advanced Patterning Solutions, IWAPS 2021
作者: Ding, Rongzheng Li, Yanli Liu, Yang Wu, Qiang Zhu, Xiaona Yu, Shaofeng State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China
As the critical dimensions of the transistor continue to be shrunk, the industry enters the EUV lithography era after the 7nm node. Due to the current high economic costs of EUV lithography in terms of equipment and p... 详细信息
来源: 评论