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检索条件"机构=ASIC and System State-Key Lab"
809 条 记 录,以下是171-180 订阅
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A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusion Input  15
A 16-bit Arithmetic Logic Unit Design by Using Gate Diffusio...
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15th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2020
作者: Duanmu, Yihang Yang, Jianguo Li, Jinbao Xue, Xiaoyong Jing, Minge Zeng, Xiaoyang State Key Lab of Asic and System School of Microelectronics Fudan University Shanghai201203 China Zhejiang Lab Hangzhou China
Gate diffusion input (GDI) is a new technology of digital circuit design for low power. Compared with traditional CMOS technology, GDI technology can reduce the power consumption, the propagation delay and the circuit... 详细信息
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Multiple-inputs multiple-outputs combining center launch and ring launch for high-speed transmission in multimode fiber links
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2011 International Conference on Future Wireless Networks and Information systems, ICFWI 2011
作者: Wang, Yuanquan Shao, Yufeng Chi, Nan State Key Lab. of ASIC and System Department of Communication Science and Engineering FudanUniversity Shanghai 200433 China
Multiple-inputs multiple-outputs(MIMO) technology widely used in wireless system is introduced to multimode fiber(MMF) links. Unlike the typical MIMO implemented in MMF, we setup a novel MIMO system combining center l... 详细信息
来源: 评论
The improvement of Transmission Properties for Multi-Mode Fiber based on Launching Optical Field Shaping and Feedback Equalization
The improvement of Transmission Properties for Multi-Mode Fi...
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Passive Components and Fiber-based Devices VI
作者: Fang, Wuliang Zhang, Junwen Shao, Yufeng Huang, Bo Chi, Nan Department of Communication Science and Technology Fudan University State Key Lab of ASIC and System Shanghai 200433 China
Recently, as the continual development of services and needs, people have a higher expectation on the optical communication system especially the passive optical network (PON). Deciding which kind of fiber to be the o... 详细信息
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A Threshold Voltage Model for GaN-Based Heterostructure-Free Normally-Off FinFET  13
A Threshold Voltage Model for GaN-Based Heterostructure-Free...
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2016 13th IEEE International Conference on Solid-state and Integrated Circuit Technology (ICSICT)
作者: Haisheng Qian Guangxi Hu Ran Liu Lirong Zheng Xing Zhou ASIC and System State Key Lab School of Information Science and Technology Fudan University School of Electrical & Electronic Engineering Nanyang Technological University
An analytical model for threshold voltage of the normally-off Ga N-based fin-shaped field-effect transistor(Fin FET) is obtained. Analytical expressions for the threshold voltage and its roll-off effect are *** design... 详细信息
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Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs
Quantum mechanical effects on the threshold voltage of the e...
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2011 IEEE 9th International Conference on asic, asicON 2011
作者: Mei, Guanghui Li, Peicheng Hu, Guangxi Liu, Ran Tang, Tingao State Key Lab. of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China
In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH) shift of the surrounding-gate (SG) MOSFETs. We show how VTH is influenced with QM effects with the consideration... 详细信息
来源: 评论
Heel crack and lead-free soldering issues affecting power electronics packages
Heel crack and lead-free soldering issues affecting power el...
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2006 IEEE Region 10 Conference, TENCON 2006
作者: He, Lunwen Pan, Shaohui Wang, L.K. Zhang, David Wei IEEE ASIC and System State Key Lab. Fudan University 220 Handan Road Shanghai 200433 China
Heel crack is one of the most complicated reliability problems of wire bonding in the power electronic package. In this work, we investigate the effects of solder IR reflow to the heel crack both in experimental and F... 详细信息
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A review on Z2-FET and PISD based on Silicon-on-insulator substrate  2
A review on Z2-FET and PISD based on Silicon-on-insulator su...
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2nd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2019
作者: Xiao, K. Liu, J. Deng, J.N. Gong, X. Wan, I.J. School of Information Science and Technology State Key Lab of ASIC and System Fudan University China Singapore117576 Singapore
This paper reviews our recent work on two novel semiconductor devices built on silicon-on-insulator (SOI) substrate. The Z2-FET, which operates with feedback mechanism, has been demonstrated with extremely sharp switc... 详细信息
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Seamless integration of RZ-DPSK-DWDM optical links with MIMO-OFDM system for 4th generation wide-area coverage mobile communication
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2011 International Conference on Future Wireless Networks and Information systems, ICFWI 2011
作者: Shao, Yufeng Wang, Yuanquan Chi, Nan State Key Lab. of ASIC and System Department of Communication Science and Engineering Fudan University Shanghai 200433 China
We introduce 10×10Gb/s RZ-DPSK-DWDM links in the architecture integration of MIMO-OFDM system. The optical communication performance and wireless communication performance is analyzed in the integrated system. Th... 详细信息
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Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study
Effects of unintended dopants on I-V characteristics of the ...
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2011 IEEE 9th International Conference on asic, asicON 2011
作者: Li, Peicheng Mei, Guanghui Hu, Guangxi Liu, Ran Tang, Tingao State Key Lab. of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China
In this paper, we study the effects of an unintional dopant in the channel on the current-voltage characteristics of a Double Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green... 详细信息
来源: 评论
A low power and high performance analog front end for passive RFID transponder
A low power and high performance analog front end for passiv...
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4th IEEE Workshop on Automatic Identification Advanced Technologies, AUTO ID 2005
作者: Hu, Jianyun Min, Hao IEEE State Key Laboratory of ASIC and System Fudan University Auto-ID Lab at Fudan University Shanghai China
This paper presents a novel low power and high performance analog front end circuit for passive RFID transponder. With a novel architecture including three rectifier circuits, among which a new high efficient rectifie... 详细信息
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