This paper presents an efficient implementation of OFDM inner receiver on a programmable multi-core processor platform with CMMB as an application. The platform consists of an array of programmable SIMD processors int...
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We demonstrate a network node with two-hop transmission and all-optical label swapping for an O-OFDM 16QAM payload at 1.2Tb/s and an OOK label at 12.5Gb/s. The overall OSNR penalty after label swapping and cascaded tr...
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A 2-Mb resistive random access memory (ReRAM) is demonstrated in 0.13-um CMOS logic process. The paper describes the cell, chip architecture, and circuit techniques to ReRAM design;The 2-Mb ReRAM chip features three c...
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A 2-Mb resistive random access memory (ReRAM) is demonstrated in 0.13-um CMOS logic process. The paper describes the cell, chip architecture, and circuit techniques to ReRAM design;The 2-Mb ReRAM chip features three circuit technologies to improve the memory yield and performance: 1) for a better endurance and resistance distribution a ramped current pulse write driver (RCPWD) circuit is designed, 2) considering process variation and verify used, a programmable reference sense amplifier (PRSA) for stable read operation is designed, and 3) for improving the yield and reliability for some special application, a double error correction codes (DEC) circuit is introduced for yield requirement of high reliability applications.
To solve the problem of deterioration of system performance for the analog front-end(AFE) non-idealities, such as Carrier Frequency Offset(CFO), IQ mismatch and Sampling Frequency Offset(SFO) in OFDM system, this pape...
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To solve the problem of deterioration of system performance for the analog front-end(AFE) non-idealities, such as Carrier Frequency Offset(CFO), IQ mismatch and Sampling Frequency Offset(SFO) in OFDM system, this paper proposes a novel joint estimation and compensation algorithm, which estimates and compensates CFO and IQ imbalance in time domain, while compensates Residual Carrier Frequency Offset(RCFO) and SFO in frequency domain. Compared with the traditional algorithms, the proposed scheme uses fewer data supporting resources to improve the estimation accuracy by introducing an iterative updating scheme. Significant non-idealities introduced, the proposed scheme is also able to achieve a low bit error rate.
We theoretically and numerically analyze the multi-carriers generation scheme based on only integrated IQ modulator. Flat and stable 11 carriers are obtained and 112Gb/s PM-QPSK experiment over a single subcarrier has...
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Multiple-inputs multiple-outputs(MIMO) technology widely used in wireless system is introduced to multimode fiber(MMF) links. Unlike the typical MIMO implemented in MMF, we setup a novel MIMO system combining center l...
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We introduce 10×10Gb/s RZ-DPSK-DWDM links in the architecture integration of MIMO-OFDM system. The optical communication performance and wireless communication performance is analyzed in the integrated system. Th...
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This paper proposes a quite accurate CMOS temperature sensor designed and developed for monitoring enviromental *** sensor uses subthreshold MOSFET to measure *** circuit has been implemented by IO thick-oxide MOS dev...
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This paper proposes a quite accurate CMOS temperature sensor designed and developed for monitoring enviromental *** sensor uses subthreshold MOSFET to measure *** circuit has been implemented by IO thick-oxide MOS devices in 0.13um standard logic process and occupies a silicon area of 37 ×*** performance of the sensor is highly linear and the temperature error is merely -0.2 ℃/0.5℃ using two-point calibration from -20℃ to 60 ℃.The sensor can operate under voltage from 1.8V to 3.6V with high *** results show a responsivity of 3.9 mV/℃ and power consumption of 1.3uW@1.8V.
In recent years,the old people's accidental falling down has become a serious problem,which caused thousands of death of elderly each *** this article,we designed a falling down detection system to enhance the sec...
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ISBN:
(纸本)9781467324748
In recent years,the old people's accidental falling down has become a serious problem,which caused thousands of death of elderly each *** this article,we designed a falling down detection system to enhance the security of the *** is a Wireless sensor system which contains a wearable terminal and a coordinator,both of which communicate with ZigBee *** wearable terminal detects people's instantaneous acceleration and transmits the signal to coordinator and PC for further *** determine whether the falling action happens,we designed a fall detection algorithm by exploring the 3D-acceleration difference between falling down and ADL(activies of daily living,such as walk,sit down).So the system could judge the fall action in high rate of accuracy.
Comprehensive experimental I-V data for the self-rectifying n~+Si-HfO_2-Ni RRAMs in the temperature range 160-300K are provided. By analyzing these data, the following conclusions are obtained: (1) the current in the ...
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Comprehensive experimental I-V data for the self-rectifying n~+Si-HfO_2-Ni RRAMs in the temperature range 160-300K are provided. By analyzing these data, the following conclusions are obtained: (1) the current in the initial state (I) of the fresh devices before forming process is conducted uniformly through the whole cross section area of the dielectric rod, while the low resistance state (LR) current after set process and the high resistance state (HR) current after reset process are conducted through conduction filament (CF) in the dielectric, in average in few of 10~4 μm~2 per CF. (2) The LR current has a high current component appeared only when V>+0.6V, with ohmic like I-V relationship and weak temperature dependence, mainly reflecting the self-rectifying property of the RRAM. All other low current LR component and HR currents appear at both bias polarity and are highly temperature dependent with activation energy E_a. There are three different kinds of barriers causing the temperature dependence of LR and HR currents, and the rectifying property of LR. The Schottky like barrier between the electrode and dielectric, the multi phonon trap assisted tunneling barrier between trap to electrode and trap to trap respectively, and the Si to deep trap capture barrier through multi phonon emission. (3) Using the recently reported density of states results of HfO_2 grain boundary associated with high and low concentrations of oxygen vacancy V_O~0, and different kind of barriers stated in (2), all experimental data are explained in a natural and unified way.
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