A dynamic range boosting (DRB) technique is proposed in this paper. By applying this technique, the designed pipelined analog-to-digital converter could sample a wide dynamic range analog input, which is even larger t...
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The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of ...
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ISBN:
(纸本)9781457712531
The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore, Inductively Coupled Plasma (ICP) deep etching process is used to etch 36°/Y-cut lithium niobate (LiNbO_3) crystals and the limitation of etching aspect ratio is studied. Several arrays with different profiles are realized under optimized processes. At last, arrays with different pitches are fabricated and characterized by a network analyzer.
A novel resistive negative feedback wideband low-noise amplifier (LNA) with feedforward noise and distortion cancelation is presented in this paper. In comparison to conventional resistive negative feedback LNA's ...
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ISBN:
(纸本)9781424466641
A novel resistive negative feedback wideband low-noise amplifier (LNA) with feedforward noise and distortion cancelation is presented in this paper. In comparison to conventional resistive negative feedback LNA's the proposed LNA circuit shows improved performance parameters including voltage gain, noise figure (NF) and input-referred third-order intercept point (IIP3). Especially for wideband LNA design's in deep sub-micrometer CMOS technologies, the proposed noise cancelation is efficient. A testchip is fabricated in 65nm CMOS. Measurement results show an LNA performance of 24dB voltage gain, 2dB NF, -5.5dBm IIP3 and S11
This paper explores the FPGA routing architecture based on a new concept of "general switch box (GSB)" to improve the performance of FPGA. Compared with the existing CB/SB routing architecture and CS-box arc...
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A specific and high-sensitive immunosensor for detecting pulmonary tuberculosis (TB) markers in human serum is presented by miniaturizing array of microelectrodes via micro electro-mechanical system (MEMS) for multi-c...
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An integrated ultra-wideband CMOS RF front-end for UWB 6-9 GHz application is presented in this paper. A single-in-differential-out gain controllable low noise amplifier and a current-reuse bleeding IQ merged quadratu...
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ISBN:
(纸本)9781424457977
An integrated ultra-wideband CMOS RF front-end for UWB 6-9 GHz application is presented in this paper. A single-in-differential-out gain controllable low noise amplifier and a current-reuse bleeding IQ merged quadrature mixer are integrated as the RF front-end. This ESD protected module is implemented in TSMC 0.13μm RF CMOS process and the post-layout simulation results shows that it achieves a high voltage gain of 23.7-25.1dB and a low voltage gain of 10-12.4dB, an averaged total noise figure of 4.6-5.1dB while operating in the high gain mode and an in-band IIP3 of -6.7dBm while the low gain mode. This RF frontend consumes 22.4mA from a 1.2V supply voltage.
In this paper, we propose and demonstrate a novel 4-bit/symbol optical data format based on modulating dark returnto-zero (DRZ), differential quadrature phase-shift keying (DQPSK) and polarization-shift-keying (PoISK)...
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In this paper, we propose and demonstrate a novel 4-bit/symbol optical data format based on modulating dark returnto-zero (DRZ), differential quadrature phase-shift keying (DQPSK) and polarization-shift-keying (PoISK) for 100Gbit/s transmission system applications, and the transmission performance is investigated.
This paper presents a dual-carrier orthogonal frequency-division multiplexing (DC-OFDM) based ultrawideband (UWB) PHY (RF front-end plus baseband processor) which is compliant with C-WPAN UWB standard. The proposed UW...
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This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which...
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