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Modeling and simulation for on-chip power grid networks by locally dominant krylov subspace method

Modeling and simulation for on-chip power grid networks by l...

引用

2008 International Conference on Computer-Aided Design, ICCAD

作者： Yan, Boyuan Tan, Sheldon X.-D. Chen, Gengsheng Wu, Lifeng Department of Electrical Engineering University of California Riverside CA 92521 United States ASIC and System State-Key-Lab Microelectronics Dept. Fudan Univeristy Shanghai 200433 China Cadence Design Systems Inc. San Jose CA 95134 United States

ISBN: (纸本)9781424428205

Fast analysis of power grid networks has been a challenging problem for many years. The huge size renders circuit simulation inefficient and the large number of inputs further limits the application of existing Krylov-subspace macromodeling algorithms. However, strong locality has been observed that two nodes geometrically far have very small electrical impact on each other because of the exponential attenuation. However, no systematic approaches have been proposed to exploit such locality. In this paper, we propose a novel modeling and simulation scheme, which can automatically identify the dominant inputs for a given observed node in a power grid network. This enables us to build extremely compact models by projecting the system onto the locally dominant Krylov subspace corresponding to those dominant inputs only. The resulting simulation can be very fast with the compact models if we only need to view the responses of a few nodes under many different inputs. Experimental results show that the proposed method can have at least 100X speedup over SPICE-like simulations on a number of large power grid networks up to 1M nodes.

关键词： Circuit simulation

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Enhancement of Endurance for CuxO based RRAM cell

Enhancement of Endurance for CuxO based RRAM cell

引用

2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： M.Yin P.Zhou H.B.Lv T.A.Tang B.A.Chen Y.Y.Lin A.Bao M.H.Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Memory Technology Development Center Semiconductor Manufacturing International Corp.

For the first time,we report that the copper oxide （CuO） based Resistive Random Access Memory （RRAM） cell can achieve 10～4 cycles（i.e.0x better） as a new record as well as elimination of the initial "forming" than reported in *** Copper oxide is integrated in MTM（metal-insulator-metal） structure and is grown by plasma oxidation of Cu substrate,with CuO near upper surface and graded CuO（i.e. increasingly Cu rich or O-vacancies rich） toward the Cu substrate.A thinner CuO upper layer can eliminate "forming" process and,for in turn,greatly enhance the endurance of resistive switching by eliminating the damage during the "forming" process..

关键词： Enhancement of Endurance for CuxO based RRAM cell

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Reconfigurable baseband processing platform for communication systems

Reconfigurable baseband processing platform for communicatio...

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IEEE Asia-Pacific Conference on Circuits and systems

作者： Xiaofang Zhou Shuang Zhao Wenqing Lu Chao Lu Gerald E. Sobelman State Key Lab of ASIC and System Fudan University Shanghai China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA

New trends in wireless communication systems require multi-standard coexistence and high data rates. In order to meet these requirements, we propose a reconfigurable baseband platform with coarse grained heterogeneous execution units and flexible interconnections, which are controlled by configuration information. In addition, we demonstrate the effectiveness of our approach in three sample implementations, namely RFID, WLAN OFDM and MIMO-OFDM systems. The performance results reveal that this platform is flexible enough to handle various baseband operations with good efficiency and at reasonable resource cost.

关键词： Baseband Hardware Digital signal processing Radiofrequency identification OFDM Wireless communication Communication system software Communication system control Software radio Communication switching

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A novel EWOD digital microfluidic device using P(VDF-TrFE)

A novel EWOD digital microfluidic device using P(VDF-TrFE)

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International Conference on Solid-state and Integrated Circuit Technology

作者： Pingan Zhao Yinqing Li Jia Zhou Ran Liu Yiping Huang Haifen Xie Haisheng Xu ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai China Department of Physics East China University of Science and Technology Shanghai China

ISBN: (纸本)9781424421855

A novel digital microfluidic device using the high dielectric constant material P(VDF-TrFE) (poly-vinylidene fluoride-trifluoroethylene) as the dielectric layer fabricated by spin-coating process is proposed. The device is featured with the advantages of both low driving voltage and IC compatible process. The dielectric constant of P(VDF-TrFE) is measured as high as 11.6. The contact angle between the liquid droplet and the device changes from 118° to 75° under an applied voltage of 30 V. A droplet of 3¿L PBS (phosphate buffered saline) has been successfully driven reciprocatively on the planar surface under an operating voltage of 20 V.

关键词： Microfluidics High K dielectric materials High-K gate dielectrics Solids Low voltage Application specific integrated circuits Microelectronics Dielectric materials Dielectric constant Dielectric measurements

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Development of novel SU-8 based nanoimprint lithography

Development of novel SU-8 based nanoimprint lithography

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Shen-Qi Xie Bing-Rui Lu Jing Wan Rong Yang Yifang Chen Xin-Ping Qu Ran Liu State key lab of Asic and system Department of MicroelectronicsFudan University Rutherford Appleton Laboratory ChiltonDidcotOxonOX11 OQXUK

We present two kinds of novel nanoimprint lithography techniques based on SU-8 photoresist with single layer and tri-layer *** imprint templates with high aspect ratio were first fabricated by electron beam lithography（EBL） and reactive ion etch （RIE）,and then duplicated by the SU-8/SiO/PMMA tri-layer technique we *** properties such as pressure and temperature are determined to fabricate different nanostructures with various imprint *** developed processes,which provide us the capability to fabricate both imprinted nanostructures on resist and transferred nanopattems on substrate with high volume and low cost,are further applied in producing high density gratings,planar chiral photonic meta-materials, and nanofluidics channels.

关键词： Development of novel SU-8 based nanoimprint lithography

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Design and fabrication of Bragg reflectors based on SU-8

Design and fabrication of Bragg reflectors based on SU-8

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Zhen Shu Jing Wan Shen-Qi Xie Bing-Rui Lu Yifang Chen Xin-Ping Qu Ran Liu State key lab of ASIC and System Department of MicroelectronicsFudan University Rutherford Appleton Laboratory ChiltonDidcotOxonOX11 OQXUK

＜正＞We report the design and fabrication of two kinds of distributed Bragg reflectors（DBRs）.One is a Bragg filter which introduces a periodic height modulation in part of a waveguide,and the other is a horizontal DBR with a deeply patterned grating structure in a waveguide at a freespace wavelength of 1.55 urn（the propagation loss of quartz fiber used in optical communication is lowest around 1.55 urn wavelength） based on a Si/Si02/SU8/air *** transfer matrix theory was used to calculate the spectral response of the Bragg filter and its dependence on the height modulation and the grating *** addition,a multilayer film reflection theory was applied to simulate reflection spectrum of the DBR and estimate the least number of pairs of DBR mirrors needed for almost 100%（＞ 99.6%） *** on the simulation results,we designed and successfully fabricated these two types of DBRs with Si/Si02/SU8/air structures.

关键词： [IEEE keyword]Distributed Bragg reflectors Mirrors Reflection Filtering theory Bragg gratings Optical waveguides Optical filters

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Enhancement of endurance for CuxO based RRAM cell

Enhancement of endurance for CuxO based RRAM cell

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International Conference on Solid-state and Integrated Circuit Technology

作者： M. Yin P. Zhou H. B. Lv T. A. Tang B.A. Chen Y.Y. Lin A. Bao M. H. Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corp. Shanghai China

For the first time, we report that the copper oxide (Cu x O) based resistive random access memory (RRAM) cell can achieve 10 4 cycles (i.e. ~10x better) as a new record as well as elimination of the initial ¿forming¿ than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded Cu x O (i.e. increasingly Cu rich or O-vacancies rich) toward the Cu substrate. A thinner CuO upper layer can eliminate ¿forming¿ process and, for in turn, greatly enhance the endurance of resistive switching by eliminating the damage during the ¿forming¿ process.

关键词： Copper Oxidation Plasma applications Substrates Electrodes Deformable models Random access memory Scanning electron microscopy Chemical analysis Spectroscopy

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Improvement of Endurance and Switching Stability of Forming-Free CuxO RRAM

Improvement of Endurance and Switching Stability of Forming-...

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IEEE International Memory Workshop (IMW)

作者： H. B. Lv M. Yin P. Zhou T. A. Tang B. A. Chen Y. Y. Lin A. Bao M. H. Chi School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corp. Shanghai China

Cu-oxide grown by plasma oxidation is found typically composed of upper CuO layer and inner graded Cu x O. The initial forming process leads to endurance degradation but can be improved by annealing in an oxygen deficient ambient. By using ramped pulse and verification algorithm, the endurance and programming voltage shift are further ameliorated.

关键词： Stability Oxidation Degradation Random access memory CMOS process Plasma measurements Breakdown voltage Microelectronics Application specific integrated circuits Semiconductor device manufacture

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Low-Complexity Two-Stage Timing Acquisition Scheme for UWB Communications

Low-Complexity Two-Stage Timing Acquisition Scheme for UWB C...

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7th Wireless Telecommunications Symposium (WTS 2008)

作者： Yanjie Peng Lang Mai Xiaoyang Zeng State Key Lab of ASIC and System Fudan University Shanghai China

A novel data-aided timing acquisition scheme is proposed for UWB wireless communications. We adopt a two-stage strategy similar to the representative least-squares (LS) timing scheme. At the first stage, pulse-level timing recovery is achieved by exploiting a frame-long template which is generated from received waveform. At the second stage, frame-level offset is obtained using offset parameters estimated in the previous stage. It entails a small amount of training symbols and allows low-complexity demodulation which bypasses costly channel estimation. Unlike conventional LS-based scheme, the proposed scheme introduces a more efficient maximum-likelihood (ML) method at the second stage, replacing complex LS method. Through performance simulations and implementation evaluations, it is shown that the proposed timing scheme largely reduces computational complexity, while exhibiting a nearly equivalent performance compared with conventional LS-based scheme.

关键词： Timing Ultra wideband communication Wireless communication Pulse generation Parameter estimation Demodulation Channel estimation Maximum likelihood estimation Computational modeling Computational complexity

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A low power SHA-less pipelined ADC used in DVB-S2

A low power SHA-less pipelined ADC used in DVB-S2

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International Conference on Solid-state and Integrated Circuit Technology

作者： Zhang Zhang Xiaoyang Zeng Jian Li Lei Xie Yawei Guo State Key Lab of ASIC & System Fudan University Shanghai P. R. China Comlent Technology Inc. Shanghai P. R. China

ISBN: (纸本)9781424421855

A 8-b 125 MS/s pipelined analog-to-digital converter (ADC) used in DVB-S2 is presented in this paper. Based on reviewing low-power design techniques of high speed ADCs, several technologies are used in the design including the SHA-less architecture to reduce the power dissipation significantly. Detailed analysis is given about the relationship between the closed loop bandwidth (BW close ) and the current of operational amplifier (OPAMP) used in multiply digital-to-analog converter (MDAC) to get the lowest power dissipation which can satisfy the ADC. The ADC is realized in SMIC 0.18 um 1P6M CMOS process and according to the simulation results, the SNDR is 48 dB with the power of 23.5 mW.

关键词： Digital video broadcasting Power dissipation Bandwidth Operational amplifiers Voltage Apertures Analog-digital conversion Digital-analog conversion CMOS process Digital signal processing

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