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International Conference on asic

作者： J.L. Shi X. Zeng ASIC & System State Key Lab Microelectronics Department Fudan University Shanghai China

This paper proposes the behavioral models of the second-generation switched-current functional block circuits using the VHDL-AMS language. The proposed models cannot only characterize the ideal behavior of the SI circuits, but also capture the SI higher order non-ideal effects, which include the charge injection effects and device mismatch effects. The accuracy of the proposed models is verified by the VHDL-AMS simulator ZENI1.0. The experimental results have shown that compared with SPICE, the behavioral modeling error is less than 1.8%, while time-domain behavioral simulation speed up is 1 to 2 orders.

关键词： Switching circuits Circuit simulation Switches SPICE Signal design CMOS technology Computational modeling Capacitance Application specific integrated circuits Microelectronics

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The Schottky characteristics of Ti/n-GaAs surface-treated by N2plasma 6

The Schottky characteristics of Ti/n-GaAs surface-treated by...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Jiang, Yu-Long Ru, Guo-Ping Lu, Fang Li, Bing-Zong Li, Wei Li, Ai-Zhen Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China State Key Laboratory of Applied Surface Physics Fudan University Shanghai200433 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)0780365208

The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N2plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N2plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350°C is better than that of samples treated at 950°C. In this article, the zero-bias Schottky barrier height (SBH) Φb0, the flat-band SBH Φb0, the thickness of the interfacial layer δ, the permittivity of the interfacial layer iand the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. © 2001 IEEE.

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Studies on the layout algorithm for CGH in OEMCM systems design

Studies on the layout algorithm for CGH in OEMCM systems des...

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International Conference on asic

作者： Lai Jing-Mei Li Ke Zhang Qian-Ling Huang Pei-Zhong ASIC &System State Key Lab Fudan University China Institute of Optical Telecommunication Shanghai JiaoTong University China

The main issue of this paper is the study on the free-space optical interconnection (FSOI) technology and the correlative physical layout algorithm for computer generated hologram (CGH) in optoelectronic multi chip module (OEMCM) systems design. A new effective physical layout algorithm is also presented. The computer simulation results show that our algorithm is useful in dealing with the restricted space position problems that occurred in massively interconnected networks. The comparison of placement layout results between the new algorithm and several other algorithms indicates an advance in technology.

关键词： Optical interconnections Optical receivers Optical transmitters Electronics packaging Integrated circuit interconnections Space technology Mirrors Optical computing Capacitance Throughput

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A wavelet balance approach for steady-state analysis of nonlinear circuits

A wavelet balance approach for steady-state analysis of nonl...

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IEEE International Symposium on Circuits and systems (ISCAS)

作者： Xin Li Bo Hu Xieting Ling Xuan Zeng Department of Electronics Engineering Fudan University Shanghai China ASIC & System State Key Lab Fudan University Shanghai China

ISBN: (纸本)0780366859

In this paper, a novel wavelet balance method is proposed for steady-state analysis of nonlinear circuits. The proposed method presents several merits compared with those conventional frequency domain techniques, First, it has a high convergence rate. Second, it works in time domain so that many critical problems in frequency domain can be handled efficiently. Third, an adaptive scheme exists to automatically select the wavelet basis functions needed at a given accuracy.

关键词： Wavelet analysis Steady-state Circuit analysis Nonlinear circuits Frequency domain analysis Circuit simulation Convergence Computational modeling Nonlinear equations Fourier series

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Modeling and simulation of RLC interconnect effects with the AWE method 6

Modeling and simulation of RLC interconnect effects with the...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Zhu, Zhaomin Streiter, R. Xia, Xiao Gang, Ruan Wolf, H. Otto, T. Gessner, T. Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China Center of Microtechnology TU Chemnitz ChemnitzD-09107 Germany Fraunhofer Institute for Reliability and Microintegration Dept. Micro Devices and Equipment ChemnitzD-09126 Germany

ISBN: (纸本)0780365208

Analysis of RLC interconnect circuit models with initial conditions and non-monotone response waveforms requires a more comprehensive waveform simulator. AWE is a generalized approach to approximating the waveform response of linear circuits with multiple steps and ramp input signals as well as unrestricted nonequilibrium initial conditions. In this paper AWE method is used to model and simulate interconnect effects such as time delay, overshoot and crosstalk. These new distributed models reveal that peak crosstalk voltage is over 60% larger for 5 GHz high-speed interconnects than predicted by current distributed RC models. © 2001 IEEE.

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A frequency domain fast wavelet collocation method for high-speed circuit simulation

A frequency domain fast wavelet collocation method for high-...

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International Conference on asic

作者： Xuan Zeng Sheng Huang Jian Wang Dian Zhou ASIC & System State-Key-Lab Microelectronics Dept Fudan University Shanghai China ECE Department University of Texas Dallas Richardson TX USA

In this paper, we present the frequency domain fast wavelet collocation method (FFWCM) for high-speed VLSI circuit simulation. Compared with the time domain fast wavelet collocation method (TFWCM), FFWCM presents the following merits. First, it consumes much less memory space and computation time, and can effectively deal with large scale circuits. Second, the frequency domain singularity can be easily handled by adaptive schemes and a frequency domain uniform error distribution can be achieved. Furthermore, the approximated time domain analytical solution can be simply obtained without performing the time consuming numeric inverse Laplace transforms. Numerical experimental results have further demonstrated the promising features of FFWCM.

关键词： Frequency domain analysis Wavelet domain Circuit simulation Computational modeling Large-scale systems Laplace equations Application specific integrated circuits Microelectronics Time domain analysis Performance analysis

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The Schottky Characteristics of Ti/n-GaAs Surface-Treated by N2 Plasma

The Schottky Characteristics of Ti/n-GaAs Surface-Treated by...

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2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Yu-Long Jiang Guo-Ping Ru Fang Lu Bing-Zong Li Wei Li Ai-Zhen Li Department of Microelectronics ASIC and System State Key Lab.Fudan University State Key Laboratory of Applied Surface Physics Fudan University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of MetallurgyChinese Academy of Sciences

The Schottky characteristics of Ti contacts on nGaAs surface-treated by N2 plasma at different temperature are *** capacitance-voltage（C-V） characteristic of the samples surface-treated by

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Recent progress of on-chip optical interconnects for integrated circuits

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2001年第4期22卷 387-397页

作者： Ruan, Gang Xiao, Xia Streiter, R. Chen, Zhi-Tao Otto, T. Gessner, T. ASIC and System State Key Lab. Fudan Univ. Shanghai 200433 China

The limitation of conventional metallization interconnects of integrated circuits and the potential solution of on-chip optical interconnect discussed. The recent progress of the three basic optical interconnect devices (light emitter, photo receiver and optical waveguide) and their integration with silicon integrated circuits were overviewed and reviewed. The prospect of on-chip optical interconnects on integrated circuits was appraised.

关键词： Integrated circuits

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High performance DDFS suitable for digital video encoder

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2001年第6期22卷 796-799页

作者： Shen, Bo Zhang, Qian-Ling ASIC and System State Key Lab. Fudan Univ. Shanghai 200433 China

A DDFS (direct digital frequency synthesizer) suitable for the digital video encoder was presented. By adopting the technique of noise shaping, the size of ROM is reduced to 1/8 of conventional one. The circuit size is further reduced by other optimization methods. The worst S/N ratio under PAL mode is 69 dB, while it is 70.7 dB under NTSC mode. The output frequency spectrum of DDFS was presented. The phase noise spectrum of the modified structure was compared with that of the conventional structure, showing that the former has lower peaks so that the DDLS performance was improved. The VLSI implementation of orthogonal DDLS suitable for video encoder was described.

关键词： Frequency synthesizers

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Zeolite-coated Microcantilever Gas Sensor

Zeolite-coated Microcantilever Gas Sensor

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2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Jia Zhou Po Li Song Zhang Feng Zhou Yiping Huang Pengyuan Yang Minhang Bao ASIC and System State Key Lab Department of Microelectronics Fudan University Department of Mechanical Engineering Institute of Petrochemical Technology East-China University of Science and Technology Chemistry Department Fudan University

A novel freon gas sensor of piezoelectric microcantilever coated with zeolite has been developed in this *** by a PZT layer,the microcantilevers are employed to detect the concentration o

ISBN: (纸本)0780365208

A novel freon gas sensor of piezoelectric microcantilever coated with zeolite has been developed in this *** by a PZT layer,the microcantilevers are employed to detect the concentration o

关键词： microsensors gas sensors zeolites piezoelectric devices freon gas sensor piezoelectric microcantilever zeolite coating PZT layer gas concentration molecular sifter microporous material

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