检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

736 篇 会议
73 篇 期刊文献

馆藏范围

809 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

500 篇 工学
- 300 篇 电子科学与技术（可...
- 163 篇 计算机科学与技术...
- 99 篇 信息与通信工程
- 92 篇 电气工程
- 92 篇 软件工程
- 69 篇 材料科学与工程（可...
- 43 篇 化学工程与技术
- 36 篇 仪器科学与技术
- 36 篇 控制科学与工程
- 34 篇 光学工程
- 31 篇 机械工程
- 19 篇 冶金工程
- 16 篇 动力工程及工程热...
- 11 篇 网络空间安全
- 10 篇 生物医学工程（可授...
- 7 篇 生物工程
- 5 篇 建筑学
- 5 篇 土木工程
200 篇 理学
- 93 篇 物理学
- 83 篇 数学
- 45 篇 化学
- 18 篇 统计学（可授理学、...
- 13 篇 系统科学
- 8 篇 生物学
30 篇 管理学
- 29 篇 管理科学与工程(可...
- 11 篇 工商管理
10 篇 军事学
- 10 篇 军队指挥学
8 篇 经济学
- 8 篇 应用经济学
4 篇 法学
- 4 篇 社会学
3 篇 医学
1 篇 农学
1 篇 艺术学

主题

28 篇 hardware
25 篇 clocks
22 篇 field programmab...
21 篇 throughput
21 篇 cmos technology
20 篇 application spec...
19 篇 abstracts
18 篇 logic gates
18 篇 random access me...
17 篇 computer archite...
17 篇 switches
15 篇 computational mo...
15 篇 silicon
14 篇 films
14 篇 decoding
13 篇 cmos integrated ...
13 篇 substrates
13 篇 voltage
13 篇 algorithm design...
13 篇 field programmab...

机构

115 篇 state key lab of...
96 篇 state key lab of...
58 篇 state key lab. o...
30 篇 state-key lab of...
23 篇 state key lab of...
19 篇 asic and system ...
19 篇 asic and system ...
16 篇 state key lab of...
15 篇 state-key lab. o...
15 篇 state key lab of...
14 篇 asic & system st...
13 篇 center for discr...
11 篇 state key lab of...
10 篇 state key lab. o...
9 篇 state key lab of...
8 篇 department of mi...
7 篇 the state key la...
7 篇 fudan university...
7 篇 school of microe...
6 篇 state key lab of...

作者

87 篇 xiaoyang zeng
44 篇 zeng xiaoyang
42 篇 xuan zeng
32 篇 xin-ping qu
29 篇 jianli chen
27 篇 jia zhou
27 篇 yibo fan
26 篇 jun yu
24 篇 dian zhou
22 篇 wei li
22 篇 jun han
22 篇 fan yang
22 篇 junyan ren
20 篇 yinyin lin
20 篇 zeng xuan
18 篇 chi nan
18 篇 yun chen
17 篇 kun wang
17 篇 lingli wang
16 篇 nan chi

语言

764 篇 英文
42 篇 中文
3 篇 其他

检索条件"机构=ASIC and System State-Key-Lab"

共 809 条记录，以下是551-560 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Configurable Pipelined Gabor Filter Implementation for Fingerprint Image Enhancement

Configurable Pipelined Gabor Filter Implementation for Finge...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Jun-bao Liu Shuai Wang Yi Li Jun Han Xiao-yang Zeng State Key Lab of ASIC and System Fudan University Shanghai 201203 China

In this paper a novel Gabor filter hardware scheme for the fingerprint image enhancement is presented. For each pixel of the image, we use accurate local frequency and orientation to generate the corresponding convolution kernel and thus achieve a better enhancement effect. And compared to the previous works, our design yields a higher throughput which is due to the pipeline techniques. Moreover the proposed design can be reconfigured to fulfill the different requirements. Evaluation results demonstrate that, when convolution kernel size is 11×11, our design can achieve 2MPixels/s @ 250MHz, and equivalent gate count is 63.8k at SMIC 0.13um worst process corner. Indeed, it's very suitable for the embedded fingerprint recognition system.

关键词： Fingerprint recognition Gabor filters Image matching Kernel Convolution Pixel Registers

来源：评论

学校读者我要写书评

暂无评论

The Design and Implement of A Mobile Security SoC

The Design and Implement of A Mobile Security SoC

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Wei Huang Jun Han Shuai Wang Xiaoyang Zeng State-Key Lab of ASIC and System Fudan University Shanghai 201203 China

This paper presents a mobile security SoC to deal with intensive cryptography algorithms for different security protocols. A MlPS-like general processor, a dedicated package processor for fast data package, and multiple security processors for cryptography are integrated in the SoC. Moreover, the performance can be greatly enhanced by the well-designed DTU (Data Transfer Unit), memory architecture and synchronization units. With the help of our MIPS, software of the processors could be programmed flexibly to fulfill the requirements of the different security protocols. A test chip is implemented in SMIC 0.13 urn standard CMOS technology, and its functionality and performance are well verified. It can achieve 565Mbps, 256Mbps, 19Kbps and 16Kbps throughput for AES (128), SHA-1, RSA(1024), ECC (192) respectively.

关键词： Cryptography system-on-a-chip Computer architecture Protocols Random access memory Algorithm design and analysis

来源：评论

学校读者我要写书评

暂无评论

Thermal stability of ultrathin RuC film as Cu diffusion barrier

Thermal stability of ultrathin RuC film as Cu diffusion barr...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Ding, Shao-Feng Xie, Qi Detavernier, Christophe Qu, Xin-Ping State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Solid State Science Ghent University Krijgslaan 281/S1 B-9000 Ghent Belgium

ISBN: (纸本)9781424457984

The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization. ©2010 IEEE.

关键词： Tantalum compounds

来源：评论

学校读者我要写书评

暂无评论

Work function modulation for TiN/Ta/TiN metal gate electrode

Work function modulation for TiN/Ta/TiN metal gate electrode

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Wang, Xiao-Rong Jiang, Yu-Long Xie, Qi Detavernier, Christophe Ru, Guo-Ping Qu, Xin-Ping Li, Bing-Zong State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Solid State Science Ghent University Krijgslaan 281/S1 B-9000 Ghent Belgium

ISBN: (纸本)9781424457984

In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO2/p-Si(100) structure was investigated. Comparing with TiN/SiO2/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction, the extracted EWF does not vary too much. An EWF of 4.4 eV is confirmed for TiN/Ta/TiN/SiO2/p-Si(100) structure by C-V measurements, which is almost identical to Al/TiN metal gate electrode. ©2010 IEEE.

关键词： Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

The effects of high work function electrodes on the electrical properties of solution processed ZnO thin film transistor

The effects of high work function electrodes on the electric...

引用

IEEE International Nanoelectronics Conference (INEC)

作者： Tao Chen Shu-Yi Liu Shao-Ren Deng Bing-Zong Li Xin-Ping Qu State Key Lab of ASIC and System Department of Microelectronics Fudan University Shanghai China

In this work, the effects of electrodes on the performance of sol-gel fabricated ZnO thin film transistor were investigated. The metal with high work function such as Pt was employed as the source-drain electrodes. Compared to the device with Al electrodes as reported before, the transistor fabricated with Pt electrode exhibited lower saturation voltage and current, which was due to the Schottky contact between the Pt electrode and the ZnO film. The result has also been proved by the current-voltage (IV) measurement of the Pt-ZnO-Pt structure. For the Schottky contact between the electrodes and the channel layer, the current saturated when the source was depleted. This kind of device reduced the operation voltage and power dissipations effectively.

关键词： Electrodes Zinc oxide Thin film transistors Schottky barriers Voltage Sputtering Pulsed laser deposition Coatings Ohmic contacts Ion beams

来源：评论

学校读者我要写书评

暂无评论

Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO2/P-Si structure

Effect of annealing on the gate effective work-function modu...

引用

IEEE International Nanoelectronics Conference (INEC)

作者： Xiaorong Wang Bingzong Li Guoping Ru Xinping Qu Yulong Jiang State Key Lab of ASIC and System Department of Microelectronics Fudan University Shanghai China

In our work, we investigate the effective work function (EWF) modulation of the metal gate about the Al/TiN/SiO 2 /p-Si structure through the thermal annealing. Through different annealing temperature and different annealing time, we find the EWF of gate electrode shifts from 4.73 eV (suitable for PMOS) to 4.18 eV (suitable for NMOS). We think the diffusion of Al to the interface and the variation of the thin TiN film characteristic are responsible for the decrease of the EWF.

关键词： Tin Electrodes Resists Sputtering MOS devices Rapid thermal annealing Plasma temperature Capacitors Dielectric materials High K dielectric materials

来源：评论

学校读者我要写书评

暂无评论

10Gbit/s MSK modulation for radio-over-fiber system

10Gbit/s MSK modulation for radio-over-fiber system

引用

Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Zhang Ning Chunning Hou Li Tao Bo Huang Xinying Li Nan Chi Department of Communication Science and Engineering and State Key Lab of ASIC & System Fudan University Shanghai 200433 China Department of Communication Science and Engineering and State Key Lab of ASIC & System Fudan University Shanghai China

In this paper, We propose a single sideband RoF system based on MSK modulation. One sideband of terahertz wave undergoes the single sideband MSK modulation while the terahertz wave is obtained via carrier-suppression double sideband modulation. The BER performance achieves 1 × 10 -9 and the sensitivity of the receiver is -17.8dBm with a data rate of 5Gb/s after 40km transmission.

关键词： Amplitude modulation Nonlinear optics Optical receivers Fiber optics Optical fiber sensors

来源：评论

学校读者我要写书评

暂无评论

A Threshold Voltage Model for the Surrounding-Gate MOSFETs

A Threshold Voltage Model for the Surrounding-Gate MOSFETs

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Guanghui Mei Guangxi Hu Peicheng Li Jinglun Gu Ran Liu Tingao Tang ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.

关键词： threshold voltage metal-oxide-semiconductor field effect transistors potential DUAL-GATE MOSFET Steam generators Integrated circuits Designers VOLTAGE

来源：评论

学校读者我要写书评

暂无评论

An Analytic Threshold Voltage Model for the Double-Gate Schottky-Barrier Source/Drain MOSFETs

An Analytic Threshold Voltage Model for the Double-Gate Scho...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Peicheng Li Guangxi Hu Guanghui Mei Ran Liu Yi Jiang Tingao Tang ASIC & System State Key Lab School of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

The threshold voltage, Vth of a double-gate SchottkyBarrier (DGSB) source/drain (S/D) metal-oxidesemiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for Vth is given, and an analytic expression for V,h is presented. We find that when the silicon thickness, tsi is small (<3 nm), V,h is very sensitive to it. Vth increases dramatically with the decreasing of tsi. Vth also increases with the increasing of the oxide thickness, and with the decreasing of the drain-so'irce voltage. These results can be of great help to the ultralargescale integrated-circuit (ULSI) designers.

关键词： threshold voltage double gate surface potential metal-oxide-semiconductor field effect transistors VOLTAGE Very large scale integration

来源：评论

学校读者我要写书评

暂无评论

Design and simulation of high-frequency (>100 MHz) ultrasonic phased array transducer

Design and simulation of high-frequency (>100 MHz) ultrasoni...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Zhang, Jin-Ying Xu, Wei-Jiang Ji, Xin-Ming Carlier, Julien Nongaillard, Bertrand Huang, Yi-Ping Département d'Opto-Acousto-Electronique CNRS UMR 8520 Université de Valenciennes 59313 Valenciennes France ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

This paper presents a theoretical study on the possible realization of high frequency ultrasonic phased array transducer (f>100 MHz) using MEMS technologies. A silicon based lithium niobate (LiNbO3) single crystal linear array is considered. Finite element method is employed for the simulation optimization design of such device. Continuous wave beam steering, focusing under different array and matching conditions are simulated and the beam performance is analyzed. The inter-element cross-talking and the element electrical impedance are also calculated. ©2010 IEEE.

关键词： Niobium compounds

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共81页 << < 52 53 54 55 56 57 58 59 60 61 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：