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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid state Electronics 2008年第1期28卷 114-118+123页

作者： Zhou, Zhujin Li, Ning Su, Yanfeng Ren, Junyan ASIC and System State Key Lab. Fudan University Shanghai 200433 China Sicomm RF Technology Corporation Shanghai 200433 China

Based on SMIC 0.35 μm mixed signal process, a forth-order active-opamp RC low-pass filter used in GSM/WCDMA communication system is presented. The filter meets the bandwidth specifications of the PDC and WCDMA standards especially the high IIP3, and shares the maximum number of components between the two modes. The total area is 1578 μm × 515 μm. The operational amplifiers with adjustable GBW were used to optimize GSM-mode power consumption. The capacitance matrix was used to tune the cutoff frequency with the consideration of the varieties of the temperature and technology. Also, the capacitances were made partially over-laping to reduce the resistance spread. The measured noise figure is 56 dB and 43 dB in the GSM and WCDMA modes, respectively. In the WCDMA mode, the IIP3 is 34 dBm, and the power dissipation is 17.9 mW;While in the GSM mode, the circuit consumes 11.3 mW. The supply volatge is 3.3 V.

关键词： Operational amplifiers

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RLC Equivalent Circuit Synthesis Method for Structure-Preserved Reduced-Order Model of Interconnect in VLSI

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Communications in Computational Physics 2008年第2期3卷 376-396页

作者： Fan Yang Xuan Zeng Yangfeng Su Dian Zhou State Key Lab.of ASIC&System Microelectronics DepartmentFudan UniversityZhangheng Road 825Shanghai 201203China MathematicsDepartment FudanUniversityHanDan Road 220Shanghai 200433China E.E.Department University of Texas at DallasRichardsonTX 75080USA.

This paper aims to explore RLC equivalent circuit synthesis method forreduced-order models of interconnect circuits obtained by Krylov subspace basedmodel order reduction (MOR) methods. To guarantee pure RLC equivalent circuitscan be synthesized, both the structures of input and output incidence matrices and theblock structure of the circuit matrices should be preserved in the reduced-order *** structure preserving MOR methods have been well established. In this paper,we propose an embeddable Input-Output structure Preserving Order Reduction(IOPOR) technique to further preserve the structures of input and output incidencematrices. By combining block structure preserving MOR methods and IOPOR technique,we develop an RLC equivalent circuit synthesis method RLCSYN (RLC SYNthesis).Inline diagonalization and regularization techniques are specifically proposedto enhance the robustness of inductance synthesis. The pure RLC model, high modelingaccuracy, passivity guaranteed property and SPICE simulation robustness makeRLCSYN more applicable in interconnect analysis, either for digital IC design ormixedsignal IC simulation.

关键词： Interconnect circuit model order reduction equivalent circuit synthesis.

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Photonic crystal biosensors based on surface plasmons

Photonic crystal biosensors based on surface plasmons

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International Conference on Solid-state and Integrated Circuit Technology

作者： Hua Huang Jinying Zhang Xinming Ji Jia Zhou Minhang Bao Yiping Huang ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424421855

Surface plasmon photonic crystals can couple the incident light with surface plasmons by the periodic array of holes on the metal film. In this paper, surface plasmon photonic crystals with periodic square array of hexagon holes were fabricated. The infrared optical properties in transmittance and reflectance of the devices were tested. A sharp peak of surface plasmon resonance was observed at the incident angles of 30° and 90°. The optical wavenumber shift at 30° incident angle was used to detect the reaction of antigen and antibody, and the line correlation between protein concentrations and wavenumber shifts were investigated. By the comparison of the results between 4 ¿m and 8 ¿m periodic arrays, the 4 ¿m periodic structure has better performance. Based on the results, the surface plasmon photonic crystals can be used as biosensors.

关键词： Photonic crystals Biosensors Plasmons Optical surface waves Optical films Biomedical optical imaging Optical coupling Optical arrays Optical devices Reflectivity

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Fabrication and transmission characteristic of PDMS plasma photonic crystal

Fabrication and transmission characteristic of PDMS plasma p...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Jinying Zhang Hua Huang Xinming Ji Jia Zhou Yiping Huang ASIC and System State Key Lab School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424421855

Two-dimensional (2-D) polydimethylsiloxane (PDMS) plasma photonic crystal with square lattice structure was fabricated by hydro-casting method using Si-based templates. The transmission characteristic of PDMS plasma photonic crystal was studied by UV-visible spectrophotometer. The results show that the plasma photonic crystal can improve the transmitted rate in visible light range.

关键词： Fabrication Plasma properties Photonic crystals Plasma applications Plasma waves Plasma simulation Testing Lattices Periodic structures Gold

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A Low Power SHA-less Pipelined ADC used in DVB-S2

A Low Power SHA-less Pipelined ADC used in DVB-S2

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Zhang Zhang Xiaoyang Zeng Jian Li Lei Xie Yawei Guo State Key Lab of ASIC & System Fudan University Comlent Technology Inc.

A 8-b 125MS/s pipelined Analog-to-Digital Converter （ADC） used in DVB-S2 is presented in this *** on reviewing low-power design techniques of high speed ADCs,several technologies are used in the design including the SHA-less architecture to reduce the power dissipation *** analysis is given about the relationship between the closed loop bandwidth (BW) and the current of operational amplifier （OPAMP） used in Multiply Digital-to-Analog Converter （MDAC） to get the lowest power dissipation which can satisfy the *** ADC is realized in SMC 0.18um 1P6M CMOS process and according to the simulation results,the SNDR is 48dB with the power of 23.5mW.

关键词： ADC SHA A Low Power SHA-less Pipelined ADC used in DVB-S2 DVB

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Role of Si implantation in control of underlap length in Schottky-Barrier source/drain MOSFETs on ultrathin body SOI

Role of Si implantation in control of underlap length in Sch...

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9th International Conference on ULtimate Integration of Silicon, ULIS 2008

作者： Qiu, Z.J. Zhang, Z. Olsson, J. Lu, J. Hellström, P.-E. Liu, R. Östling, M. Zhang, S.-L. State Key Lab. of ASIC and System School of Microelectronics Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden Angstrom Laboratory Uppsala University Uppsala Sweden

ISBN: (纸本)9781424417308

This works demonstrates a novel approach using Si implantation prior to Pt deposition and PtSi formation to control the underlap length between the PtSi source/drain regions to the gate in Schottky-Barrier (SB-) MOSFETs. Dopant segregation at the PtSi/Si interface is used to enhance device performance. With the Ion/Ioff current ratio as an indicator, optimized Si implant doses are found for both n- and p-channel SB-MOSFETs. Through an effective barrier width, the underlap length has direct implication on the leakage current. © 2008 IEEE.

关键词： Schottky barrier diodes

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Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI

Silicide as diffusion source for dopant segregation in 70-nm...

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9th International Conference on ULtimate Integration of Silicon, ULIS 2008

作者： Qiu, Z.J. Zhang, Z. Lu, J. Liu, R. Östling, M. Zhang, S.-L. State Key Lab. of ASIC and System School of Microelectronics Fudan University Shanghai China School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden Angstrom Laboratory Uppsala University Uppsala Sweden

ISBN: (纸本)9781424417308

In this paper, dopant segregation (DS) method is adopted to enhance device performance of PtSi-based Schottky-barrier source/drain MOSFETs (SB-MOSFETs) fabricated on ultrathin silicon-on-insulator. The DS formation is realized by means of Suicide As Diffusion Source. Without DS treatment, the devices are typically p-type, but with a rather large electron branch at positive gate bias. Dopant segregation with As is found to turn the devices to well-performing n-MOSFETs, and DS with B to greatly enhance the hole conduction in the p-MOSFETs. A large threshold voltage (Vt) shift is however observed in the p-MOSFET due to B lateral spread caused during the drive-in process for the DS formation. By reducing the drive-in temperature, this problem is partially addressed with a smaller Vt shift and a much better control of short channel effect. © 2008 IEEE.

关键词： Threshold voltage

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Absorption and desorption characteristic of zeolites in gas sensor system

Absorption and desorption characteristic of zeolites in gas ...

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Wei Yao Yuanyuan Hu Xinming Ji Nan Ren Jia Zhou Yiping Huang Yi Tang ASIC and System State Key Lab Department of MicroelectronicsFudan University Department of Chemistry Fudan University

Nanosized zeolites as a novel absorbent were investigated targeting for the nerve agent sarin stimulant gas *** crystal microbalance（QCM） gas sensors modified with Silicalite-1 or Cu-ZSM-5 zeolites synthesized as micro-porous absorbents were fabricated and their gas response characteristics were examined to study the absorption capability of *** results indicated that Cu-ZSM-5 zeolite has stronger absorption capacity than Silicalite-1 due to the affinity between Cu and *** our experimental conditions, when desorption temperature is 523K and desorption time is 30 minutes,the Cu-ZSM-5 zeolite not only have optimum desorption properties,also have good *** with Silicalite-1,Cu-ZSM-5 zeolite is a preferable absorption material for chemical warfare agent detection and it also can present a good selective and repeating ability.

关键词： Zeolite Preconcentration QCM DMMP

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Development of novel SU-8 based nanoimprint lithography

Development of novel SU-8 based nanoimprint lithography

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International Conference on Solid-state and Integrated Circuit Technology

作者： Shen-Qi Xie Bing-Rui Lu Jing Wan Rong Yang Yifang Chen Xin-Ping Qu Ran Liu State key lab of Asic and system Fudan University Shanghai China Rutherford Appleton Laboratory Chilton Didcot Oxon UK

ISBN: (纸本)9781424421855;9781424421862

We present two kinds of novel nanoimprint lithography techniques based on SU-8 photoresist with single layer and tri-layer approaches. The imprint templates with high aspect ratio were first fabricated by electron beam lithography (EBL) and reactive ion etch (RIE), and then duplicated by the SU-8/SiO 2 /PMMA tri-layer technique we developed. Imprint properties such as pressure and temperature are determined to fabricate different nanostructures with various imprint depth. The developed processes, which provide us the capability to fabricate both imprinted nanostructures on resist and transferred nanopatterns on substrate with high volume and low cost, are further applied in producing high density gratings, planar chiral photonic metamaterials, and nanofluidics channels.

关键词： Nanolithography Resists Nanostructures Electron beams Lithography Etching Temperature Nanopatterning Costs Gratings

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A Novel EWOD Digital Microfluidic Device Using P（VDF-TrFE）

A Novel EWOD Digital Microfluidic Device Using P（VDF-TrFE）

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Pingan Zhao Yinqing Li Jia Zhou Ran Liu Yiping Huang Haifen Xie Haisheng Xu ASIC and System State Key Lab Department of MicroelectronicsFudan University Department of Physics East China University of Science and Technology

＜正＞A novel digital microfluidic device using the high dielectric constant material P（VDF-TrFE）（poly-vinylidene fluoride-trifluoroethylene） as the dielectric layer fabricated by spin-coating process is *** device is featured with the advantages of both low driving voltage and IC compatible *** dielectric constant of P（VDF-TrFE） is measured as high as *** contact angle between the liquid droplet and the device changes from 118°to 75°under an applied voltage of 30V.A droplet of 3μL PBS（phosphate buffered saline） has been successfully driven reciprocatively on the planar surface under an operating voltage of 20V.

关键词： [IEEE keyword]Voltage measurement Materials Dielectric measurements Microfluidics Electrodes Dielectric constant Dielectrics

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