This paper presents a RF MOST model using the EKV model which has been initially developed for the design and analysis of low-voltage, low-current analog circuits. Since most MOSFET models are generated for digital an...
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ISBN:
(纸本)0863416446
This paper presents a RF MOST model using the EKV model which has been initially developed for the design and analysis of low-voltage, low-current analog circuits. Since most MOSFET models are generated for digital and low-frequency analog design, a RF MOSFET model with the consideration of the HF behavior is necessarily and urgently needed for RF design. A modified EKV model is presented in this paper, with some extrinsic components used for predicting the RF characteristics of the device. The extraction procedure of model parameters is provided. Measured result from a 0.25 μm RF CMOS process with simulated result show the validity of the model.
The relaxation current decays with time t to follow the Curie-von Schweidler law of J(t) = Jotn with the exponent n slightly less than the unity either under or after dc-voltage stressing of Pb(Zr,Ti)O thin films,in a...
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ISBN:
(纸本)1424401607
The relaxation current decays with time t to follow the Curie-von Schweidler law of J(t) = Jotn with the exponent n slightly less than the unity either under or after dc-voltage stressing of Pb(Zr,Ti)O thin films,in agreement with direct measurements of capacitance dispersion evaluated from frequency spectrum.J versus voltage shows a typical behavior of p-n junction at t = 0.28 s but overlapping of twin p-n junctions at t < 10 ms. This predicts voltage modification of two interfacial depletion layers formed by polarization terminations near interfaces between the film and electrodes.
For the low voltage power MOSFETs,the power loss and the switching frequency are the most important parameters,the two are separately determined by the conduction resistance RDs(on) and the gate charge Q. The gate cha...
For the low voltage power MOSFETs,the power loss and the switching frequency are the most important parameters,the two are separately determined by the conduction resistance RDs(on) and the gate charge Q. The gate charge mainly depends on the gate to drain charge *** so-called figure-of-merit,which is defined as the product of the R(on) and Q is commonly used to quantifying the performance of the power MOSFETs for a specified off-state breakdown voltage(BVDS).The trench gate structure power MOSFET can attain low conduction resistance R(on) with high cell density,in this paper its structure and performance are discussed,due to there is a body diode between drain and source,the electrical characteristic of drain and source is not *** curve tracer,the device’s capacitive effects both the gate capacitance and the PN junction capacitance which determines the gate charge Q are studied with its AC *** this point,some abnormal cases are *** C-V curve is also investigated,for the N- drift area under the gate which forms the gate to drain capacitance C,its high frequency C-V curve is different from that of the common MIS structure.
＜正＞The design of acoustic resonator is critical for the sensitivity of photoacoustic（PA） gas *** this paper, a LC Circuit model is built for the simulation of 1D acoustic resonator with considerations of some non...
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ISBN:
(纸本)1424401607
＜正＞The design of acoustic resonator is critical for the sensitivity of photoacoustic（PA） gas *** this paper, a LC Circuit model is built for the simulation of 1D acoustic resonator with considerations of some nonideal factors such as the boundary layers in *** model is verified by the device and the corresponding experimental *** an application of the model,a 1D acoustic resonator for CO photoacoustic spectroscopy is studied. The effects of the structrual parameters,quality factor and resonant frequency on the performance of the device are theoretically ***’s worthy noted that for the first time we point out the effect of the ambient temperature.
The surface blistering of the 6×10 cm dose hydrogen ion implanted GaAs wafers were investigated as a function of temperature and time during the rapid thermal annealing,as well as the implant *** the 50keV implan...
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ISBN:
(纸本)1424401607
The surface blistering of the 6×10 cm dose hydrogen ion implanted GaAs wafers were investigated as a function of temperature and time during the rapid thermal annealing,as well as the implant *** the 50keV implanted samples,the blisters（microcavities） start to form and crack at a temperature larger than 300℃.The blister density increases rapidly with increasing the annealing temperature at first,and then saturates at temperature larger than 500℃.The size of craters,which are the cracked microcavities,seems to be independent of the annealing *** increasing the implant energy,the critical temperature to trigger blistering increases,meanwhile,the blister density decreases and the average crater size increases. The results of this study may be useful to optimize the Smart-Cut process for the GaAs/Si fabrication.
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300℃to 330℃using bis（cyclopentadienyl） ruthenium[RuCp]and oxygen as *** of reactive ion etch...
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ISBN:
(纸本)1424401607
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300℃to 330℃using bis（cyclopentadienyl） ruthenium[RuCp]and oxygen as *** of reactive ion etching（RIE） was performed to the underlying substrates before deposition in order to improve the *** tests were carried out to characterize the as-deposited *** results showed that the nucleation density of Ru films with RIE pretreatment to the underlying TaN substrates was much higher than that of the ones without any *** still the deposited Ru films were not very uniform and there was a TaO film between Ru and TaN caused by thermal ALD process.
The vertical DMOS(Double Diffused MOSFET) is widely used in power microelectronics,its switching performance is determined mainly by the gate resistance and the input *** a gate resistance testing technique is develop...
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ISBN:
(纸本)1424401607
The vertical DMOS(Double Diffused MOSFET) is widely used in power microelectronics,its switching performance is determined mainly by the gate resistance and the input *** a gate resistance testing technique is developed in order to determine its device *** this paper we will discuss various processes induced device failures,such as the poor interconnect of the poly gate and the metal,the bonding wire,and the etch process,and their impact to the performance and reliability of the devices as well as the in-line testing method used for the performance validation.
The properties of the Ruthenium(Ru)/TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance,X-ray diffraction(XRD),X-ray photoelectron spectrosc...
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ISBN:
(纸本)1424401607
The properties of the Ruthenium(Ru)/TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance,X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS),transmission electron microscopy(TEM) and electrical Current leakage-Voltage ***,Ru and TaN thin films were deposited by ion beam sputtering *** resistance and XRD results demonstrate that there was little inter-diffusion with ascending annealing *** XPS spectra indicate that Ru was partially oxidized and no inter reaction with low-k was *** images show that copper appeared into barriers when the sample was annealed at 400℃/30min, and it is revealed that copper diffused into low-k at 500℃/30min from theⅠ-Ⅴtest.
The reaction between Ni and amorphous SiGeC thin film on SiO substrate is *** point probe（FPP）,X-ray diffraction（XRD） and Auger electron spectroscopy（AES） depth profiling are used to check the sheet resistance,t...
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ISBN:
(纸本)1424401607
The reaction between Ni and amorphous SiGeC thin film on SiO substrate is *** point probe（FPP）,X-ray diffraction（XRD） and Auger electron spectroscopy（AES） depth profiling are used to check the sheet resistance,the phase formation and atomic distribution during the *** is found that comparing with Ni reaction withα-SiGe,thephase change of Ni reaction withα-SiGeC is *** 700℃annealing a tetragonal phase ofη-NiSi is formed during the Ni reaction withα-*** atoms diffuse to the surface at a higher temperature and cause the lattice constant decrease of the formed Ni（SiGe） film.
＜正＞The electrical propertie of Ni（Pt）-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss *** is demonstrated that the Pt interface layer can not only...
＜正＞The electrical propertie of Ni（Pt）-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss *** is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity.
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