CoMo alloys as copper diffusion barriers were investigated in this *** thermal stability was studied after annealing,which was measured by FPP, XRD,SEM and *** to the electrical test,we carried out a new p-cap structu...
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CoMo alloys as copper diffusion barriers were investigated in this *** thermal stability was studied after annealing,which was measured by FPP, XRD,SEM and *** to the electrical test,we carried out a new p-cap structure to *** breakdown electrical field and C-V properties were measured at 150℃.Both the thermal test and electrical results show CoMo is a potential diffusion barrier.
This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C fo...
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We propose a novel scheme to realize large group delay in a single ring resonator with an OFDM transmitter. The fundamental trade-off between transmission bandwidth and delay can be addressed with this new buffer. ...
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A logic-process embedded DRAM with 2T multi-Vth PMOS gain cell with one high-Vth for retention enhancement and one low-Vth transistors for fast read speed is *** improve the write speed,the write back step and sense s...
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ISBN:
(纸本)9781467324748
A logic-process embedded DRAM with 2T multi-Vth PMOS gain cell with one high-Vth for retention enhancement and one low-Vth transistors for fast read speed is *** improve the write speed,the write back step and sense step are separated,and the write before sense schemes are adopted to improve write speed and suppress the noise disturbance to adjacent bitlines. The simulation results illustrate that the write cycle of memory is 3ns which corresponding to 333MHz operating *** cell size is 64F2 and is 40%of SRAM in the same process generation.
Effective radius models for the nanoscale elliptical Surrounding-Gate(SG)metal-oxide-semiconductor field-effect transistor(MOSFET)are *** characteristics of the elliptical SG MOSFET are simulated with TCAD simulation ...
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Effective radius models for the nanoscale elliptical Surrounding-Gate(SG)metal-oxide-semiconductor field-effect transistor(MOSFET)are *** characteristics of the elliptical SG MOSFET are simulated with TCAD simulation tools,the electric potential,drain to source current,and the subthreshold swing are *** simple effective radius models can be implanted in circuit simulations,and facilitate the practical use of the device.
In this paper, we describe the generation, detection, and performance of frequency-shift keying （FSK） for high-speed optical transmission and label switching. A non-return-to-zero （NRZ） FSK signal is generated by ...
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In this paper, we describe the generation, detection, and performance of frequency-shift keying （FSK） for high-speed optical transmission and label switching. A non-return-to-zero （NRZ） FSK signal is generated by using two continuous-wave （CW） lasers, one Mach-Zehnder modulator （MZM）, and one Mach-Zehnder delay interferometer （MZDI）. An RZ-FSK signal is generated by cascading a dual-arm MZM, which is driven by a sinusoidal voltage at half the bit rate. Demodulation can be achieved on 1 bit rate through one MZDI or an array waveguide grating （AWG） demultiplexer with balanced detection. We perform numerical simulation on two types of frequency modulation schemes using MZM or PM, and we determine the effect of frequency tone spacing （FTS） on the generated FSK signal. In the proposed scheme, a novel frequency modulation format has transmission advantages compared with traditional modulation formats such as RZ and differential phase-shift keying （DPSK）, under varying dispersion management. The performance of an RZ-FSK signal in a 4 x 40 Gb/s WDM transmission system is discussed. We experiment on transparent wavelength conversion based on four-wave mixing （FWM） in a semiconductor optical amplifier （SOA） and in a highly nonlinear dispersion shifted fiber （HNDSF） for a 40 Gb/s RZ-FSK signal. The feasibility of all-optical signal processing of a high-speed RZ-FSK signal is confirmed. We also determine the receiver power penalty for the RZ-FSK signal after a 100 km standard single-mode fiber （SMF） transmission link with matching dispersion compensating fiber （DCF）, under the post-compensation management scheme. Because the frequency modulation format is orthogonal to intensity modulation and vector modulation （polarization shift keying）, it can be used in the context of the combined modulation format to decrease the data rate or enhance the symbol rate. It can also be used in orthogonal label-switching as the modulation format for the payload or the label. As an example, we p
Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid the complexity of the computa...
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Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid the complexity of the computation, Poisson's equation (PE) is solved through the entire channel region, and an analytic expression for electric potential is obtained. Based on the potential model, subthreshold swing is obtained. Model results match with Medici simulations very well. The results will provide some guidance for the application of the device in integrated circuits.
We theoretically and numerically analyze the multi-carriers generation scheme based on only integrated IQ modulator. Flat and stable 11 carriers are obtained and 112Gb/s PM-QPSK experiment over a single subcarrier has...
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ISBN:
(纸本)9781557529381
We theoretically and numerically analyze the multi-carriers generation scheme based on only integrated IQ modulator. Flat and stable 11 carriers are obtained and 112Gb/s PM-QPSK experiment over a single subcarrier has been demonstrated.
The preparation of porous ceramic scaffolds with nano-hydroxyapatite (HA) whiskers was reported in this work. By adding kalium ion and adjusting the pH value of solution, the thermal stability of nano-HA whiskers were...
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