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International Conference on asic

作者： Wei Chen Wenyi Che Xiao Wang Chenling Huang Na Yan Hao Min Jie Tan State Key Laboratory of ASIC and System Auto id Lab Fudan University Shanghai China Institute of Automation Chinese Academy and Sciences Beijing China

A two-stage wake-up circuit for semi-passive radio frequency identification (RFID) tag is designed and implemented in SMIC 0.18 ¿m CMOS technology. In order to prolong the tag's battery life, a novel two-stage wake-up strategy with self-calibration is proposed. Measurement results show that the wake-up circuit has no static power and is free of process, voltage and temperature (PVT) variations.

关键词： Circuits RFID tags Radiofrequency identification Batteries Threshold voltage CMOS technology Logistics Costs Rectifiers Inverters

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A 5.4GHZ WIDE TUNING RANGE CMOS PLL USING AN AUTO-CALIBRATION MULTIPLE-PASS RING OSCILLATOR

A 5.4GHZ WIDE TUNING RANGE CMOS PLL USING AN AUTO-CALIBRATIO...

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IEEE International SOC Conference

作者： Ping Lu Danfeng Chen Fan Ye Junyan Ren ASIC & System State Key Lab of Fudan University

ISBN: (纸本)9781424449408

A 5.4GHz multiple-pass ring voltage controlled oscillator (VCO) based phase-locked loop (PLL) is described. For the sake of active devices' sensitivity to process and temperature regarding ring oscillators, an effective automatic frequency calibration scheme is proposed. A new process-independent differential to single (DTOS) is used to adjust control voltage range and loop gain. The chip is implemented in 0.18-μm CMOS process and achieves phase noise of -100dBc/Hz@1MHz and a 40% tuning range.

关键词： mesh voltage Phase locked loops Ring oscillators Oscillators Prolymphocytic Leukemia Sake CMOS process Phase noise tuning rings Phase input voltage range output voltage range frequency calibration Loops

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A systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Ret...

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IEEE International Memory Workshop (IMW)

作者： P. Zhou H. J. Wan Y. L. Song M. Yin H. B. Lv Y. Y. Lin S. Song R. Huang J. G. Wu M. H. Chi State Key Lab of ASIC & System and School of Microelectronics Fudan University Shanghai China Memory Technology Development Center Semiconductor Manufacturing International Corporation Shanghai China

ISBN: (纸本)9781424437627

The long retention, more than 10 years at 85degC, and excellent thermal reliability memory of TiN-Cu x O-Cu (with TiN cap layer as top electrode) is reported. TiN cap layer results in more stable reset from low resistance state (LRS) to high resistance state (HRS) under positive pulse and SET under negative pulse, which is beneficial for providing large programming current or voltage on the resistive random access memory (RRAM) resistor connected in series with a select transistor. Results show that the structure of TiN-Cu x O-Cu with its compatibility to CMOS technology appears a promising memory device for embedded application.

关键词： Tin Thermal stability Voltage Temperature Fabrication Electrodes Plasma measurements Sputtering Pulse measurements CMOS technology

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New degradation mechanisms and reliability performance in tunneling field effect transistors

New degradation mechanisms and reliability performance in tu...

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International Electron Devices Meeting (IEDM)

作者： G. F. Jiao Z. X. Chen H. Y. Yu X. Y. Huang D. M. Huang N. Singh G. Q. Lo D.-L. Kwong Ming-Fu Li State Key Lab ASIC & System Department Microelectronics Fudan University Shanghai China Institute of Microelectronics Agency for Science Technology and Research Singapore School of EEE Nanyang Technological University Singapore Singapore

ISBN: (纸本)9781424456390;9781424456406

Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current I d is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field E x at the gate/source overlapping region due to the P + doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.

关键词： Degradation Tunneling FETs Performance analysis Current measurement Electric variables measurement Stress measurement Time measurement Doping MOSFET circuits

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Provably good and practically efficient algorithms for CMP

Provably good and practically efficient algorithms for CMP

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Design Automation Conference

作者： Dummy Fill Chunyang Feng Hai Zhou Changhao Yan Jun Tao Xuan Zeng Microelectronics Dept. Fudan University China EECS Northwestern University U.S.A Fudan University Shanghai Shanghai CN State Key Lab of ASIC & System Microelectronics Dept. Fudan University China

To reduce chip-scale topography variation in chemical mechanical polishing (CMP) process, dummy fill is widely used to improve the layout density uniformity. Previous researches formulated the dummy fill problem as a standard linear program (LP). However, solving the huge linear program formed by real-life designs is very expensive and has become the hurdle in deploying the technology. Even though there exist efficient heuristics, their performance cannot be guaranteed. In this paper, we develop a dummy fill algorithm that is both efficient and with provably good performance. It is based on a fully polynomial time approximation scheme [Fleischer, 2004 ] for covering LP problems. Furthermore, based on the approximation algorithm, we also propose a new greedy iterative algorithm to achieve high quality solutions more efficiently than previous Monte-Carlo based heuristic methods. Experimental results demonstrate the effectiveness and efficiency of our algorithms.

关键词： Iterative algorithms Runtime Surfaces Approximation algorithms Tiles Polynomials Computer aided manufacturing Algorithm design and analysis Filling Permission

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Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H^＋ Implantation for High-Density Charge Storage

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Chinese Physics Letters 2008年第5期25卷 1871-1874页

作者：张燕均费瑾文汤庭鳌江安全 ASIC & System State Key Lab Department of Microelectronics Fudan University Shanghai 200433

Hydrogen ions are implanted into Pb（Zro.3Tio.7）03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffrac- tion patterns show the film structures before and after H＋ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage cur- rent nearly in one order for the implanted film, but the current at time shorter than i s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H＋ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.

关键词： supernova explosion proto-neutron star shock wave

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Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

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Chinese Physics Letters 2008年第3期25卷 1087-1090页

作者：吕杭炳周鹏傅秀峰尹明宋雅丽唐立汤庭鳌林殷茵 School of Microelectronics and State Key Lab of ASIC & System Fudan University Shanghai 200433

Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.

关键词： supernova explosion proto-neutron star shock wave

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Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate

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JOURNAL OF APPLIED PHYSICS 2008年第11期103卷 114102-114102-4页

作者： Sun, Qing-Qing Zhang, Chi Dong, Lin Shi, Yu Ding, Shi-Jin Zhang, David Wei Fudan Univ Dept Microelect State Key Lab ASIC & System Shanghai 200433 Peoples R China

Hafnium tetrachloride is one of the most commonly used precursors for atomic layer deposition of hafnium based gate dielectrics. According to the previously reported experimental result, chlorine residue is almost unavoidably incorporated and piled up near the interface. We performed first-principles calculations to study the effect of chlorine residue in HfSiO(4), which explained the experimental observations. The chlorine at interstitial site serves as a source of negative fixed charge, while the chlorine at oxygen substitutional site changes its charge state depending on the position of electron chemical potential within the HfSiO(4) band gap, which possibly enlarges the hysteresis of the gate dielectrics. Moreover, chlorine incorporation also reduces the band gap of HfSiO(4) by inducing lattice strain. (C) 2008 American Institute of Physics.

关键词： CHLORINE HAFNIUM SILICATES DIELECTRICS ELECTRIC charge & distribution HYSTERESIS

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Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application

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Chinese Physics Letters 2008年第10期25卷 3742-3745页

作者：周鹏李晶陈良尧汤庭鳌林殷茵 School of Microelectronies and State Key Lab of ASIC and System Fudan University Shanghai 200433 Department of Optical Science and Engineering Fudan University Shanghai 200433

Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The A1/ZrO2/AI cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Ai/ZrO2/AI ceil can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.

关键词： the power-law exponents precipitation durative abrupt precipitation change

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A high-performance reconfigurable 2-D transform architecture for H.264

A high-performance reconfigurable 2-D transform architecture...

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15th IEEE International Conference on Electronics, Circuits and systems, ICECS 2008

作者： Cao, Wei Hou, Hui Lai, Jinmei Tong, Jiarong Min, Hao State Key Lab. of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781424421824

The 44 integer transforms are adopted in the MPEG-4 AVC /H.264 standard. In this paper, two novel signal flow graphs of the 44 forward and inverse transforms for H.264 are proposed. A high-performance reconfigurable 2-D architecture without using transpose memory for the multiple transforms is proposed on the basis of the new SFGs. Our design is implemented with 0.18um CMOS technology. The proposed design is more efficient than the existing typical designs. Under a clock frequency of 100 Mhz, the architecture allows the realtime processing of 40962048 at 60fps. © 2008 IEEE.

关键词： Inverse transforms

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