It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction di...
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It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.
Membrane electrode assembly reactor offers great promise toward practical CO_(2)***,traditional proton exchange membrane possesses strong acidic chemical environment,which facilitates undesired hydrogen evolution *** we report a proton antagonist strategy,through which the proton diffusion pathways have been severely impeded by Na+cation to produce an alkaline-rich *** this new membrane electrode assembly,we can significantly suppress the hydrogen evolution and achieve a Faradaic efficiency of 95.7%for CO with 51.5%energy *** addition,our proton antagonist membrane outperforms the commercial anion exchange membrane in both conductivity and oxidation resistance lifetime,which are crucial for large scale electrolysis of carbon neutral chemicals.
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co...
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Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data *** the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase *** resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 *** is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.
In computationally complex applications, the tolerance of errors and the restriction of energy consumption stimulate the research into approximate computing, a promising methodology to trade off the hardware cost and ...
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Up to now, in the field of application-dependent testing for FPGA interconnect resources, the most widely used method is single-term function method, and the most accurate fault model is asymmetric bridging fault mode...
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Employing large routing multiplexers (MUXes) in FPGA results in significant area and delay overheads. Hence, the two-stage cascaded structure with small MUXes can reduce the area and delay effectively. However, the ma...
In this paper, an output capacitor-less low dropout (LDO) regulator with low power consumption and fast transient response is proposed. The dual power transistors are adaptively activated based on the load current. Fu...
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Capacitive sensors are one of the most widely used sensors today. In recent years, High resolution has assumed a paramount role in sensor design, guaranteeing precise measurement outcomes. Quantification to the aF lev...
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In the EDA process of FPGA, VTR (Verilog-to-Routing) is a commonly used open-source CAD tool in the academic community, and VPR (Versatile Place and Route) is the back-end process of VTR. The packing algorithm in VPR ...
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Because of the logic redundancy of look-up table (LUT) based field programmable gate array (FPGA), we explore a series of programmable logic block (PLB) architectures to increase logic density by adding different kind...
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