检索结果-内蒙古大学图书馆

Polarization-encoded neural networks with simplified grating patch

Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

来源：评论

学校读者我要写书评

暂无评论

An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-xTix)O3/SiC Floating Gate Transistor 17

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

引用

17th IEEE International Conference on Solid-State and Integrated circuit technology, ICSICT 2024

作者： Liu, Yu Lin, Lin Wang, Xiang Zhong, Chengyan Guo, Junxiong Huang, Wen Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu610106 China

ISBN: (纸本)9798350361834

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots. © 2024 IEEE.

关键词： Gate dielectrics

来源：评论

学校读者我要写书评

暂无评论

The growth and expansive applications of amorphous Ga_(2)O_(3)

引用

Chinese Physics B 2023年第8期32卷 52-68页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory for Organic Electronics and Information Displays(KLOEID)&Institute of Advanced Materials(IAM) Jiangsu Key Laboratory for BiosensorsJiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and AstronauticsMinistry of Industry and Information TechnologyNanjing 211106China

As a promising ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is attracting extensive attention of researchers due to its feasible growth process,appropriate bandgap of 4.4 e V-5.3 e V allowing for deep-ultraviolet(deepUV)detection,good physical and chemical stability,high breakdown field strength and electron mobility,*** from the strict processes for controllable crystalline Ga_(2)O_(3)(usually refer to as stable monoclinicβ-Ga_(2)O_(3)),amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))film can be prepared uniformly at low temperature on a large-area deposition substrate,suggesting great advantages such as low manufacturing cost and excellent flexibility,dispensing with high-temperature and high vacuum ***,a-Ga_(2)O_(3)extremely facilitates important applications in various applied ***,in this concise review,we summarize several major deposition methods for a-Ga_(2)O_(3)films,of which the characteristics are ***,potential methods to optimize the film properties are proposed by right of the inspiration from some recent ***,the applications of a-Ga_(2)O_(3)thin films,e.g.,in photodetectors,resistive random access memories(RRAMs)and gas sensors,are represented with a fruitful discussion of their structures and operating mechanisms.

关键词： amorphous-Ga_(2)O_(3) thin film functional application

来源：评论

学校读者我要写书评

暂无评论

High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

引用

Science China(Technological Sciences) 2023年第11期66卷 3259-3266页

作者： SHEN GaoHui LIU Zeng TANG Kai SHA ShuLin LI Lei TAN Chee-Keong GUO YuFeng TANG WeiHua Innovation Center of Gallium Oxide Semiconductor(IC-GAO) College of Integrated Circuit Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory of Aerospace Information Materials and Physics(NUAA) MIITNanjing 211106China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China Advanced Materials Thrust Function HubThe Hong Kong University of Science and Technology(Guangzhou)Nansha 511458China Department of Electronic and Computer Engineering School of EngineeringThe Hong Kong University of Science and TechnologyHong Kong 999077China

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing *** 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam *** addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the ***,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector *** a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

关键词： Ga_(2)O_(3) photodetector array imaging photo-response

来源：评论

学校读者我要写书评

暂无评论

An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-x Tix)O3/SiC Floating Gate Transistor

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

引用

International Conference on Solid-State and Integrated circuit technology

作者： Yu Liu Lin Lin Xiang Wang Chengyan Zhong Junxiong Guo Wen Huang Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing P. R. China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu P. R. China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

关键词： Power demand Silicon carbide Neuromuscular Neuromorphics Feature extraction Threshold voltage Transistors Synapses Robots Prosthetics

来源：评论

学校读者我要写书评

暂无评论

Power Electronics Packaging Materials for High Heat Reliability

引用

Journal of Japan Institute of Electronics Packaging 2021年第3期24卷 233-240页

作者： Hozoji, Hiroshi Kato, Fumiki Tanaka, So Shinkai, Jiro Sato, Hiroshi Advanced Power Electronics Research Center National Institute of Advanced Industrial Science and Technology Power Circuit Integration Team AIST Tsukuba West 16-1 Onogawa Tsukuba Ibaraki305-8569 Japan

来源：评论

学校读者我要写书评

暂无评论

Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation

Enhancing Key Performance of Vertical GaN Schottky Barrier D...

引用

International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Bo Li Zhengweng Ma Linfei Gao Junfa Mao Wenrong Zhuang Quanchun Li Bo Zhang Renqiang Zhu Jingbo Li Xinke Liu College of Materials Science and Engineering College of Electronics and Information Engineering Shenzhen University Shenzhen China State Key Laboratory-of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen China Dongguan Sino Nitride Semiconductor Co. Ltd Dongguan China Red and Blue Microelectronics Co. Ltd Shanghai China School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China College of Optical Science and Engineering Zhejiang University Hangzhou China

ISBN: (数字)9798350394825

ISBN: (纸本)9798350394832

The main challenges in current vertical GaN diodes involve electric field crowding effects and ohmic contacts on the nitrogen face (N-Face). Extensive prior research has been conducted in these areas. In this study, we introduced a novel dual-ion (carbon and helium) co-implantation edge termination (ET), aiming to enhance the breakdown voltage $(V_{\text{BR}})$ capability of vertical GaN Schottky barrier diodes (SBDs). Furthermore, atomic layer deposition (ALD) was applied on the N-face to deposit a 1.2 nm aluminum oxide $(\text{AlO}_{x})$ layer, effectively reducing the contact resistance of the ohmic contacts $(\rho_{\mathrm{c}})$ . The fabricated devices exhibit a low turn-on voltage $V_{\text{on}}$ of 0.56 V and a high $I_{\text{on}}/I_{\text{off}}$ of $\sim 10^{9}$ . The introduction of $\text{AlO}_{x}$ mitigates the Fermi-level pinning effect (FLP), reducing the device resistance $R_{\text{on},\text{sp}}$ from 3.01 $\mathrm{m}\Omega\cdot \text{cm}^{2}$ to 1.34 $\mathrm{m}\Omega\cdot \text{cm}^{2}$ . Moreover, the dual-ion co-implantation ET enables the devices to achieve a maximum $V$ BR of 1410 V, resulting in a high figure of merit (FOM) of 1.48 GW/cm 2 .

关键词： Resistance Performance evaluation Schottky diodes Fermi level Schottky barriers Ions Ohmic contacts

来源：评论

学校读者我要写书评

暂无评论

Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

引用

Vacuum 2024年 225卷

作者： Wang, Chen Fan, Wei-Hang Cao, Rong-Jun Fan, Hui-Chen Xu, Yi-Hong Kang, Pin-Chun Wu, Ting-Zhu Kuo, Hao-Chung Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

The characteristics of amorphous Sn-doped Ga2O3 films deposited using radio frequency magnetron sputtering at room temperature under different sputter powers have been demonstrated. A balance mechanism of energy supply and ion bombardment controlled by sputter power has been found during the deposition. The increasing growth rate as power can be due to the increased yield sputtering species indicated by an in situ optical emission spectroscopy. As the power increases to 700 W, an obvious change from discrete nanoparticles to flat-continuous film can be observed because of sufficient energy supply for oxidation reaction, which leads to the maximum ratio of lattice oxygen and Sn4+ indicating the optimal film quality and conductive property. However, a non-negligible high energy ion bombardment presented at 900 W leads to the degraded film quality. The influence of sputtering power on Sn-doped Ga2O3 solar-blind photodetectors is demonstrated. It can obtain a good performance with an ultra-low dark current density of 2.2 × 10−11 A/cm2, a substantial light-dark current ratio of 1.08 × 103 and fast rise/decay time of 1.59 s/0.54 s at 700 W. The revelation of the role of sputtering power on the properties of Sn-doped Ga2O3 films may offer an interesting direction for low-cost and high-performance solar-blind photodetectors. © 2024 Elsevier Ltd

关键词： Gallium compounds

来源：评论

学校读者我要写书评

暂无评论

Study on modulation bandwidth of GaN-based micro-light-emitting diodes by adjusting quantum well structure

Research Square

引用

Research Square 2022年

作者： Yin, Pan Zhi, Ting Tao, Tao Liu, Xiaoyan Institute for Electric Light Sources School of Information Science and Technology Fudan University Shanghai200433 China Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing210046 China College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China

GaN-based blue micro-light-emitting diodes (µ-LEDs) with different structures were designed, of which the effect of quantum well (QW) structure on modulation bandwidth was numerically explored. By using trapezoidal QWs, the quantum-confined Stark effect (QCSE) can be reduced, leading to an enhanced electron-hole wave function overlap, thereby increasing the recombination rate and reducing the differential carrier lifetime. In addition, the improved hole transport also creates favorable conditions for shortening the differential carrier lifetime. It is found that the − 3 dB modulation bandwidth of µ-LEDs with trapezoidal QWs was higher than those of ordinary ones. In this work, the − 3 dB modulation bandwidth of µ-LEDs can be raised to 1.13 GHz at 10 kA/cm2 © 2022, CC BY.

关键词： Light emitting diodes

来源：评论

学校读者我要写书评

暂无评论

Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

Research Square

引用

Research Square 2021年

作者： Wang, Luding Cheng, Houyi Li, Pingzhi Liu, Yang van Hees, Youri L.W. Lavrijsen, Reinoud Lin, Xiaoyang Cao, Kaihua Koopmans, Bert Zhao, Weisheng Fert Beijing Institute School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing100191 China Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology P.O. Box 513 Eindhoven5600 MB Netherlands

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture1-3. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque5,6 or spin orbit torque7,8 with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics1,4. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption. © 2021, CC BY.

关键词： Tunnel junctions

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：