The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic de...
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The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this stud34 we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (〈600 ℃). Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm^2/(V·s). Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.
86 Gbit/s hybrid polarization multiplexed OOK/DPSK signal is generated and transmitted at the same wavelength. Clear eye diagrams of demultiplexed OOK and DPSK signals are obtained after transmission over a 106.5 km S...
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5-hydroxymethylcytosine (5-hmC) is an important epigenetic derivative of cytosine and quantitative detection of 5-hmC could be used as a reliable biomarker for a variety of human diseases. Current technologies used ...
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5-hydroxymethylcytosine (5-hmC) is an important epigenetic derivative of cytosine and quantitative detection of 5-hmC could be used as a reliable biomarker for a variety of human diseases. Current technologies used in 5-hmC detection are complicated and time/cost inefficient. In this work, we report the first application of antibody-functionalized carbon nanotube field-effect transistors (CNT-FETs) in quantitative detection of 5-hmC from mouse tissues. This method achieves facile and ultra-sensitive 5-hmC detection based on electrical performance device and avoids complicated processing for DNA samples. The 5-hmC content percentages of normal mouse cerebrum, cerebellum, spleen, lung, liver, and heart samples presented in the genomic DNA were measured as 0.653, 0.573, 0.002, 0.020, 0.076, and 0.009, respectively, which is consistent with previous reports. This technology could be developed into fadle routine 5-hmC monitoring devices for clinic human disease diagnoses.
This paper describes experiences gained during the process of implementing a standard serial benchmark (SLALOM) on a distributed computing system (Pleiades running ESP). The purpose of our experiments has been to maxi...
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This paper reports non-surface-binding, label-free PCR product quantification using a field effect transistor as a DNA sensor. Fast and sequential detection of DNA samples has been achieved without regeneration of sen...
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This work investigates the mechanism of threshold voltage Vth shift of D-Mode GaN-on-Si high electron mobility transistors (HEMTs) based on double pulse IDS-VGS measurements. The influence of applied drain voltage VDS...
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We describe progress using a user-centered design process to migrate a family therapy game to a web-based therapist tool, called FamilySense, that supports therapists creating part of the therapeutic game. Using cards...
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This work reports on the mechanism of abnormal dynamic on-resistance (dynamic Ron) in AlGaN/GaN high electron mobility transistors (HEMT) under drain stress (VDS, stress). Based on the capacitance change, it is propos...
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To perform fault studies (e.g., fault detection, diagnosis, and mitigation) via internet for a remote automation line, operation time is an important feature/symptom for human supervisors. This paper introduces the ap...
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