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SSRN 2023年

作者： Kim, Jaesung Ahn, Jihae Son, Minhwi Kim, Yuseong Lee, Jae-Jin Kim, Dongkyu Chen, Ming-Chou Kim, Choongik Choi, Sukwon Seo, Sungyong Department of Chemical and Biomolecular Engineering Sogang University 1 Shinsoo-dong Mapo-gu Seoul04107 Korea Republic of Department of Smart Green Technology Engineering Pukyong National University Busan48513 Korea Republic of Department of Chemistry Pukyong National University Busan48513 Korea Republic of Department of Advanced Materials Engineering for Information & Electronics Integrated Education Institute for Frontier Science & Technology BK21 Four Kyunghee University Gyeonggi-do17104 Korea Republic of Daejeon34114 Korea Republic of Department of Chemistry Research Center of New Generation Light Driven Photovoltaic Modules National Central University Taoyuan32001 Taiwan

Liquid crystalline organic semiconductors have garnered significant attention in the realm of organic thin-film transistors (OTFTs) due to their inherent controllability of phase and electrical properties with temperature variations. Typically, liquid crystalline semiconductors possess distinct structures comprising rigid anisotropic cores and flexible chains. Here, we sought to identify liquid crystalline semiconductor materials by appending a thiophene ring and octyl chain to the anisotropic 6-(thiophen-2-yl)benzo[b]thiophene (TBT) backbone. Among the investigated TBT derivatives, the compound featuring additional thiophene ring and octyl chains on both sides exhibited pronounced liquid crystalline characteristics, specifically the SmE and SmA phases. The optical, thermal, and electrical characteristics as well as thin film properties of the TBT derivatives were investigated. The TBT compound was employed through solution-shearing as an active layer for top-contact/bottom-gate OTFTs. The liquid-crystalline TBT thin film annealed at low temperature (30 ℃) showed hole mobility as high as 0.025 cm2/Vs and a current on/off ratio of > 106. This represents an order of magnitude improvement over that in SmE phase (at 70 ℃) and nearly double the performance observed in the SmA annealed (at 130 ℃). The utilization of the TBT derivative as a p-channel material represents a significant step toward the development of novel liquid crystalline semiconductors. © 2023, The Authors. All rights reserved.

关键词： Liquid crystals

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FEC-free optical data transmission with a chip-integrated microresonator frequency comb source

FEC-free optical data transmission with a chip-integrated mi...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Soma Kogure Tamiki Ohtsuka Shun Fujii Hajime Kumazaki Shuya Tanaka Yosuke Hashimoto Yuta Kobayashi Tomohiro Araki Kentaro Furusawa Norihiko Sekine Takasumi Tanabe Department of Electronics and Electrical Engineering Faculty of Science and Technology Keio University Yokohama Japan Quantum Optoelectronics Research Team RIKEN Center for Advanced Photonics Saitama Japan Research Unit I Research and Development Directorate Japan Aerospace Exploration Agency Ibaraki Japan Terahertz Technology Research Center National Institute of Information and Communications Technology Tokyo Japan

We investigated the feasibility of IM-DD communication in a microcomb. Turing pattern and soliton combs are ideal, though MI comb can transmit signals when the pump-detuning is well controlled and excessive noise is s... 详细信息

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Laser noise Optical solitons Lasers and electrooptics Optical pumping Microcavities Optical noise Data communication

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Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells (vol 13, 3786, 2022)

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NATURE COMMUNICATIONS 2022年第1期13卷 3786-3786页

作者： Wopke, Christopher Gohler, Clemens Saladina, Maria Du, Xiaoyan Nian, Li Greve, Christopher Zhu, Chenhui Yallum, Kaila M. Hofstetter, Yvonne J. Becker-Koch, David Li, Ning Heumueller, Thomas Milekhin, Ilya Zahn, Dietrich R. T. Brabec, Christoph J. Banerji, Natalie Vaynzof, Yana Herzig, Eva M. MacKenzie, Roderick C. I. Deibel, Carsten Institut für Physik Technische Universität Chemnitz 09126 Chemnitz Germany Institute of Materials for Electronics and Energy Technology (i-MEET) Friedrich-Alexander-Universität Erlangen-Nürnberg 91054 Erlangen Germany Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (HI ERN) Immerwahrstrasse 2 91058 Erlangen Germany Guangdong Provincial Key Laboratory of Optical Information Materials and Technology Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China Physikalisches Institut Dynamik und Strukturbildung - Herzig Group Universität Bayreuth Universitätsstr. 30 95447 Bayreuth Germany Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA Department of Chemistry and Biochemistry University of Bern 3012 Bern Switzerland Integrated Center for Applied Photophysics and Photonic Materials Technische Universität Dresden 01062 Dresden Germany Center for Advancing Electronics Dresden Technische Universität Dresden 01062 Dresden Germany State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and Devices School of Materials Science and Engineering South China University of Technology 381 Wushan Road 510640 Guangzhou China Department of Engineering Durham University Lower Mount Joy South Road Durham DH1 3LE UK

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC. Long operational stability is essential to commercialisation of organic solar cells. Here, the authors investigate the thermal degradation of inverted photovoltaic devices based on PM6:Y6 non-fullerene system to reveal that trap-induced transport resistance is primarily responsible for the drop in fill factor.

关键词： Photonic devices Polymers Solar cells Solar cells Electronic and spintronic devices

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Optimization of performance of the KM2A full array using the Crab Nebula

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Chinese Physics C 2024年第6期48卷 169-178页

作者：曹臻 F.Aharonian 安琪阿西克古白云翔包逸炜 D.Bastieri 毕效军毕玉江蔡金庭曹晴曹文羽曹喆常进常劲帆陈尚明陈恩生陈亮陈林陈龙陈明君陈玛丽陈起辉陈素弘陈天禄陈阳程宁程耀东崔明阳崔树旺崔晓红崔昱东戴本忠代洪亮戴子高单增罗布 D.della Volpe 董绪强段凯凯樊军辉范一中方军方堃冯存峰封莉冯少辉丰晓婷冯有亮 S.Gabici 高博高川东高林青高启高卫高伟康葛茂茂耿利斯 G.Giacinti 龚光华苟全补顾旻皓郭福来郭晓磊郭义庆郭莹莹韩毅昂何会海贺昊宁何佳银何新波何钰 M.Heller 贺远强侯博文侯超侯贤胡红波胡铨胡世聪黄代绘黄天奇黄文俊黄性涛黄晓渊黄勇黄志成季筱璐贾焕玉贾康江琨姜晓巍姜泽军金敏康明铭柯通 D.Kuleshov.K.Kurinov 李兵兵李澄李骢李丹李飞李海波李会财李华阳李军李剑李捷李凯李文龙李文莲李秀荣李昕李一卓李哲黎卓梁恩维梁云峰林苏杰刘冰刘成刘栋刘虎刘海东刘佳刘江来刘金艳刘茂元柳若愚刘四明刘伟刘怡刘以农鲁睿罗晴吕洪魁马伯强马玲玲马欣华毛基荣闵振 W.Mitthumsiri 穆慧君南云程 A.Neronov 区子维庞彬宇 P.Pattarakijwanich 裴致远齐孟尧祁业情乔冰强秦家军 D.Ruffolo A.Sáiz D.Semikoz 邵澄宇邵琅 O.Shchegolev 盛祥东舒富文宋慧超 Yu.V.Stenkin V.Stepanov 苏扬孙秦宁孙晓娜孙志斌谭柏轩唐庆文唐泽波田文武王超王昌贝王广威王洪光王惠惠王建成汪凯王利苹王玲玉王培汉王冉王为王祥高王祥玉王阳王玉东王岩谨王忠海王仲翔王振王铮韦大明魏俊杰魏永健文韬吴超勇吴含荣武莎吴雪峰吴雨生席邵强夏捷夏君集项光漫肖迪泫肖刚辛广广辛玉良邢祎熊峥徐东莲徐仁峰徐仁新徐伟立薛良闫大海颜景志颜田杨朝文杨帆杨冯帆杨何文杨佳盈杨莉莉杨明洁杨睿智杨深邦姚玉华姚志国叶一锰尹丽巧尹娜游晓浩游智勇于艳红袁强岳华曾厚敦曾婷轩曾玮查敏张彬彬张丰张海明张恒英张建立张丽霞张力张鹏飞张佩佩张瑞张少博张少如张寿山张潇张笑鹏张云峰张毅张勇赵兵赵静赵雷赵立志赵世平郑福周斌周浩周佳能周猛周平周荣周勋秀祝成光祝凤荣朱辉朱科军左雄 LHAASO Collaboration Key Laboratory of Particle Astrophyics&Experimental Physics Division&Computing Center Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China University of Chinese Academy of Sciences Beijing 100049China Tianfu Cosmic Ray Research Center Chengdu 610000China Dublin Institute for Advanced Studies 31 Fitzwilliam Place2 DublinIreland Max-Planck-Institut for Nuclear Physics P.O.Box 10398069029 HeidelbergGermany State Key Laboratory of Particle Detection and Electronics China University of Science and Technology of China Hefei 230026China School of Physical Science and Technology&School of Information Science and Technology Southwest Jiaotong UniversityChengdu 610031China School of Astronomy and Space Science Nanjing UniversityNanjing 210023China Center for Astrophysics Guangzhou UniversityGuangzhou 510006China Hebei Normal University Shijiazhuang 050024China Key Laboratory of Dark Matter and Space Astronomy&Key Laboratory of Radio Astronomy Purple Mountain ObservatoryChinese Academy of SciencesNanjing 210023China Tsung-Dao Lee Institute&School of Physics and Astronomy Shanghai Jiao Tong UniversityShanghai 200240China Key Laboratory for Research in Galaxies and Cosmology Shanghai Astronomical ObservatoryChinese Academy of SciencesShanghai 200030China Key Laboratory of Cosmic Rays(Tibet University) Ministry of EducationLhasa 850000TibetChina National Astronomical Observatories Chinese Academy of SciencesBeijing 100101China School of Physics and Astronomy(Zhuhai)&School of Physics(Guangzhou)&Sino-French Institute of Nuclear Engineering and Technology(Zhuhai) Sun Yat-sen UniversityZhuhai 519000&Guangzhou 510275China School of Physics and Astronomy Yunnan UniversityKunming 650091China Département de Physique Nucléaire et Corpusculaire Facultéde SciencesUniversitéde Genève24 Quai Ernest Ansermet1211 GenevaSwitzerland Institute of Frontier and Interdisciplinary Science Shandong UniversityQingdao 266237China APC Universit'e Paris Cit'eCNRS/IN2P3CEA/IRFUObservat

The full array of the Large High Altitude Air Shower Observatory(LHAASO)has been in operation since July *** its kilometer-square array(KM2A),we optimized the selection criteria for very high and ultrahigh energyγ-rays using data collected from August 2021 to August 2022,resulting in an improvement in significance of the detection in the Crab Nebula of approximately 15%,compared with that of previous *** the implementation of these new selection criteria,the angular resolution was also significantly improved by approximately 10%at tens of *** aspects of the full KM2A array performance,such as the pointing error,were also calibrated using the Crab *** resulting energy spectrum of the Crab Nebula in the energy range of 10-1000 TeV are well fitted by a log-parabola model,which is consistent with the previous results from LHAASO and other experiments.

关键词： γ-ray Crab Nebula significance

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Adaptive Modification of Fading Channel Models for Terrestrial SFN Environments

Adaptive Modification of Fading Channel Models for Terrestri...

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IEEE International Symposium on Broadband Multimedia systems and Broadcasting (BMSB)

作者： Sungjun Ahn Seok-Ki Ahn Sung-Ik Park Jeongchang Kim Sungho Jeon Mats Ek Sesh Simha Mark Aitken Anindya Saha Prashant M. Maru Parag Naik Joonhyuk Kang Media Research Division Electronics and Telecommunications Research Institute (ETRI) Yuseong-gu South Korea School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon South Korea Interdisciplinary Major of Maritime AI Convergence the Division of Electronics and Electrical Information Engineering Korea Maritime and Ocean University Busan South Korea Media Transmission Department Korean Broadcasting System Seoul South Korea Progira Radio Communication AB Luleå Sweden ONE Media 3.0 Sinclair Broadcast Group Inc. Hunt Valley MD USA Saankhya Labs Bengaluru India

This paper introduces a model modification procedure to adapt single-frequency network (SFN) channel models to the receiver directivity. The presented work is a sequel of [1], extending the modeling framework in a parametrically adjustable form. Behind this extension, it is remarked that channel fading in SFNs can be realized differently if the receiver changes antenna beam pattern or orientation. To reflect this aspect, the proposed method recalculates the channel response gain of each signal incidence as dependent on the network’s geometric layout and antenna directivity figure. By virtue of this reconfiguration ability, measurement-driven SFN channel models acquire an extra capability of more realistic simulations on various transmission scenarios. The existing channel characterization and modeling results would accordingly become more versatile, possibly beyond digital television use cases. For explicit demonstration, we present a modification example of S 3 -Extended model.

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Comparison between Microstrip-line and Substrate Integrated Waveguide on Package Substrate in 170 GHz and 300 GHz Bands

Comparison between Microstrip-line and Substrate Integrated ...

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Asia-Pacific Conference on Microwave

作者： Yohei Morishita Ken Takahashi Ryosuke Hasaba Tomohiro Murata Koji Takinami Hidenori Kitamura Ushio Sangawa Takashi Tomura Issei Watanabe Engineering Division Panasonic Industry Co. Ltd. Yokohama City Japan Technology Center Panasonic System Networks R&D Lab. Co. Ltd. Yokohama City Japan Electronic Materials Business Division Panasonic Industry Co. Ltd. Yokohama City Japan Department of Electrical and Electronic Engineering Tokyo Institute of Technology Yokohama City Japan Advanced ICT Research Institute National Institute of Information and Communications Technology Yokohama City Japan

ISBN: (数字)9784902339567

ISBN: (纸本)9781665451086

This paper studies a low loss transmission line structure for 100 GHz to 300 GHz, which is considered as terahertz bands for 6G. Transmission losses of the microstrip-line (MSL) and the substrate integrated waveguide (SIW) are discussed by theoretical calculations. The theoretical calculations predict the loss of the MSL can be lower than that of the SIW at the very high frequency like the terahertz bands. To confirm the prediction, the MSL and the SIW have been designed and fabricated on the package substrate. The measurement results show that the loss of the SIW is lower than that of the MSL at 170 GHz whereas the loss of the SIW is higher than that of the MSL at 300 GHz as predicted by the theoretical analysis.

关键词： Microwave measurement 6G mobile communication Power transmission lines Waveguide theory Propagation losses Transmission line measurements Loss measurement

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Round-Robin Test of Site VSWR Validation for 18-40 GHz Band in Japan

Round-Robin Test of Site VSWR Validation for 18-40 GHz Band ...

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Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)

作者： Jerdvisanop Chakarothai Katsumi Fujii Noriyuki Mitsuzuka Shinichi Okuyama Toshiki Shimazaki Hidenori Muramatsu Katsunori Miura Masaru Yoshihara Hironari Tanaka Kimihiro Tajima Takeshi Yamanaka Masashi Takabe Electromagnetic Compatibility Laboratory Electromagnetic Standard Research Center Radio Research Institute National Institute of Information and Communications Technology Tokyo Japan Matsudo Test Site Telecom Engineering Center Chiba Japan NEC Platforms Ltd. VCCI Council Tokyo Japan Japan Quality Assurance Organization Tokyo Japan EMC-Engineering Department EMC Division Riken Environmental System Co. Ltd. Saitama Japan Ohtama Calibration Service Co. Ltd. Kanagawa Japan EMC Center Environmental Business Unit Global Business Headquarters NTT Advanced Technology Corporation Tokyo Japan Intertek Japan Tokyo Japan

ISBN: (数字)9784885523472

ISBN: (纸本)9798350349498

The validation of test sites for EMI measurements in a frequency range between 18 and 40GHz is required. There has been no instruction specified in the CISPR standards for the site validation in this frequency range. However, the site VSIVR measurements might be time consuming and costly. It would be beneficial in the aspect of time and cost if the site validation can be omitted for 18 to 40GHz when the test site is already compliant with the CISPR 16-1-4 specification below 18GHz. This report shows the round-robin test results of the site VSWR for 1-6, 6-18, and 18-40 GHz bands done in six test sites in Japan. The results have shown the possibility to omit the site validation when the test site is already compliant with the CISPR $6 \mathrm{~dB}$ limit in the frequency range below 18GHz.

关键词： Uncertainty Power measurement Costs Measurement uncertainty Electromagnetic interference Electromagnetic compatibility Time measurement

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Charge density wave and weak Kondo effect in a Dirac semimetal CeSbTe

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Science China(Physics,Mechanics & Astronomy) 2021年第3期64卷 90-98页

作者： Peng Li BaiJiang Lv Yuan Fang Wei Guo ZhongZheng Wu Yi Wu DaWei Shen YueFeng Nie Luca Petaccia Chao Cao Zhu-An Xu Yang Liu Zhejiang Province Key Laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China Center for Correlated Matter Zhejiang UniversityHangzhou 310058China National Laboratory of Solid State Microstructures College of Engineering and Applied SciencesNanjing UniversityNanjing 210093China State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China Elettra Sincrotrone Trieste Strada Statale 14 km 163.5Trieste 34149Italy Department of Physics Hangzhou Normal UniversityHangzhou 310036China

Using angle-resolved photoemission spectroscopy(ARPES) and low-energy electron diffraction(LEED), together with densityfunctional theory(DFT) calculation, we report the formation of charge density wave(CDW) and its interplay with the Kondo effect and topological states in CeSbTe. The observed Fermi surface(FS) exhibits parallel segments that can be well connected by the observed CDWordering vector, indicating that the CDWorder is driven by the electron-phonon coupling(EPC) as a result of the nested FS. The CDW gap is large(~0.3 eV) and momentum-dependent, which naturally explains the robust CDWorder up to high temperatures. The gap opening leads to a reduced density of states(DOS) near the Fermi level(EF), which correspondingly suppresses the many-body Kondo effect, leading to very localized 4 f electrons at 20 K and above. The topological Dirac cone at the X point is found to remain gapless inside the CDW phase. Our results provide evidence for the competition between CDWand the Kondo effect in a Kondo lattice system. The robust CDWorder in CeSbTe and related compounds provide an opportunity to search for the long-sought-after axionic insulator.

关键词： charge density wave Kondo effect Dirac semimetal

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A chip-scale polarization-spatial-momentum quantum SWAP gate in silicon nanophotonics

arXiv

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arXiv 2023年

作者： Cheng, Xiang Chang, Kai-Chi Xie, Zhenda Sarihan, Murat Can Lee, Yoo Seung Li, Yongnan Xu, XinAn Vinod, Abhinav Kumar Kocaman, Serdar Yu, Mingbin Lo, Patrick Guo-Qiang Kwong, Dim-Lee Shapiro, Jeffrey H. Wong, Franco N.C. Wong, Chee Wei Fang Lu Mesoscopic Optics and Quantum Electronics Laboratory University of California Los AngelesCA90095 United States Optical Nanostructures Laboratory Columbia University New YorkNY10027 United States National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Nanjing University Nanjing210093 China Department of Electrical Engineering Middle East Technical University Ankara06800 Turkey Institute of Microelectronics Singapore117685 Singapore State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Shanghai Industrial Technology Research Institute Shanghai200050 China Advanced Micro Foundry Singapore117685 Singapore Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States

Recent progress in quantum computing and networking enables high-performance large-scale quantum processors by connecting different quantum modules. Optical quantum systems show advantages in both computing and communications, and integrated quantum photonics further increases the level of scaling and complexity. Here we demonstrate an efficient SWAP gate that deterministically swaps a photon’s polarization qubit with its spatial-momentum qubit on a nanofabricated two-level silicon-photonics chip containing three cascaded gates. The on-chip SWAP gate is comprehensively characterized by tomographic measurements with high fidelity for both single-qubit and two-qubit operation. The coherence preservation of the SWAP gate process is verified by single-photon and two-photon quantum interference. The coherent reversible conversion of our SWAP gate facilitates a quantum interconnect between different photonic subsystems with different degrees of freedom, demonstrated by distributing four Bell states between two chips. We also elucidate the source of decoherence in the SWAP operation in pursuit of near-unity fidelity. Our deterministic SWAP gate in the silicon platform provides a pathway towards integrated quantum information processing for interconnected modular systems. © 2023, CC BY.

关键词： Silicon photonics

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Real-time and ultrafast optical pulse quantization based on slicing the supercontinuum

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Chinese Optics Letters 2021年第8期19卷 69-74页

作者： Ya Guo Qiang Cai Zhiwei Jia Bingjie Xu Zhensen Gao Qianwu Zhang Ruonan Zhang Adonis Bogris K.Alan Shore Yuncai Wang Pu Li Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of EducationTaiyuan University of TechnologyTaiyuan 030024China School of Information Engineering Guangdong University of TechnologyGuangzhou 510006China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai UniversityShanghai 200444China School of Electronics and Information Northwestern Polytechnical UniversityXi’an 710072China Science and Technology on Communication Security Laboratory Institute of Southwestern CommunicationChengdu 610041China Department of Informatics and Computer Engineering University of West AtticaAthens 12243Greece School of Electronic Engineering Bangor UniversityWales LL571UTUnited Kingdom

All-optical analog-to-digital conversion is a paramount issue in modern science. How to implement real-time and ultrafast quantization to optical pulses with different intensities in an all-optical domain is a central problem. Here, we report a realtime demonstration of an all-optical quantization scheme based on slicing the supercontinuum in a nonlinear fiber. In comparison with previous schemes through off-line analysis of the power of different optical spectral components in the supercontinuum, this, to the best of our knowledge, is the first demonstration of such functionality online in the time ***, the extinction ratio among the quantized outputs can exceed 10 d B, which further confirms the feasibility of the proposed quantization scheme. The current 3 bit resolution in the proof-of-principle experiment is limited by the current experimental condition, but it can be expected to be greatly enhanced through improving both the spectral width of the generated supercontinuum and the number of filtering channels used.

关键词： all-optical analog-to-digital conversion photonic quantization all-optical signal processing supercontinuum generation

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