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International Electron devices Meeting (IEdM)

作者： June-Mo Koo Bum-Seok Seo Sukpil Kim Sangmin Shin Jung-Hyun Lee Hionsuck Baik Jang-Ho Lee Jun Ho Lee Byoung-Jae Bae Ji-Eun Lim dong-Chul Yoo Soon-Oh Park Hee-Suk Kim Hee Han Sunggi Baik Jae-Young Choi Yong Jun Park Youngsoo Park Nano Devices Laboratory Samsung Advanced Institute of Technology Yongin si South Korea Nano Fabrication Center Samsung Advanced Institute of Technology Yongin si South Korea AE Center Samsung Advanced Institute of Technology Yongin si South Korea Process Development Team Semiconductor R&D Division Samsung Electronics Company Limited Yongin si South Korea Department of Materials Science and Engineering Pohang University of Science and Technology Pohang South Korea Pohang Accelerator Laboratory Pohang University of Science and Technology Pohang South Korea

ISBN: (纸本)078039268x

We fabricated trench PbZr x Ti 1-x O 3 (PZT) capacitors that can be used in 256Mbit 1T-1C FrAM devices. The capacitor has 0.25mum diameter and 0.4mum depth. Three layers, Ir(20nm)/PZT(60nm)/Ir(20nm), were deposited in SiO 2 trench holes by ALd and MOCVd. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative portion had strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under 2.1V external bias and 19 to 24 muC/cm 2 remnant polarization

关键词： Fabrication Capacitors random access memory Ferroelectric films Nonvolatile memory Polarization Materials science and technology Laboratories MOCVd Ferroelectric materials

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Characterization of a-SiCN:H Passivation Layer deposited by Hot Wire Chemical Vapor deposition using Hexamethyldisilazane

Characterization of a-SiCN:H Passivation Layer Deposited by ...

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第十五届国际光伏科学与工程大会

作者： Michio Otsubo Takehiko Sato Shinsuke Miyajima Amornrat Limmanee Tatsuro Watahiki Akira Yamada Makoto Konagai Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Material & Process Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Kanagawa 229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan

As a novel passivation film for silicon solar cells, hydrogenated amorphous silicon carbon nitride films were prepared by hot wire chemical vapor deposition using hexamethyldisilazane (HMdS). HMdS has significant advantages which are non-explosive and low price. X-ray photoelectron spectroscopy measurement showed that the chemical composition ratio of Si, C and N are 4.5, 4.0 and 1 respectively. Spectroscopic ellipsometry measurement revealed that refractive index of the deposited film is 2.4～3.0 and the optical band gap is 3.0 eV. The passivation effect of a-SiCN:H films were indicated by the increase of the effective lifetime of the Si wafer.

关键词： a-SiCN:H Hot wire chemical vapor deposition Hexamethyldisilazane Antireflection Passivation

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Capacitance-Voltage Study of a-SiCN:H/Si Interfaces Fabricated by Hotwire Chemical Vapor deposition Using Hexamethyldisilazane

Capacitance-Voltage Study of a-SiCN:H/Si Interfaces Fabricat...

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第十五届国际光伏科学与工程大会

作者： Amornrat Limmanee Michio Otsubo Takehiko Sato Shinsuke Miyajima Tatsuro Watahiki Adash Sandhu Akira Yamada Makoto Konaga Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Material & Process Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Kanagawa229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan

In our previous work, we have found that hydrogenerated amorphous silicon carbon nitride films (a-SiCN:H) deposited by hotwire chemical vapor deposition (HWCVd) using hexamethyldisiIazane (HMdS) can be applied as an antireflection coating and passivation layer for crystalline and polycrystalline silicon solar cells. Since interface properties are of most concern in photovoltaic applications, in this study we investigated a-SiCN:H/Si interfaces via capacitance-voltage measurements to find optimum conditions (deposition and post-deposition anneal conditions). Our analysis was focusing on the dependence of the changes in interface trap density, fixed charge density and lifetime on the anneal conditions. Experimental results indicated that post-deposition annealing increased positive charge in the films and annealing at high temperature reduced effects due to surface states. The post deposition annealing at 600℃seemed to be effective in increasing life-time while that at 400℃had reverse effect. Thus we found that post-deposition anneal has a very significant effect on a-SiCN:H/Si interface and optimum anneal temperature and time improves the interface properties of a-SiCN:H films.

关键词： Hotwire chemical vapor deposition a-SiCN:H C-V measurement lifetime

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Influence of glass substrate surface roughness on extreme ultraviolet reflectivity of Mo∕Si multilayer

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures processing, Measurement, and Phenomena 2004年第6期22卷 3063-3066页

作者： Shinji Miyagaki Hiromasa Yamanashi Atsuko Yamaguchi Iwao Nishiyama EUV Process Technology Research Laboratory Association of Super-Advanced Electronics Technologies (ASET) c/o NTT Atsugi R&D Center 3-1 Morinosato Wakamiya Atsugi Kanagawa 243-0198 Japan

The influence of the surface roughness of a glass substrate on the extreme ultraviolet (EUV) reflectivity of Mo∕Si multilayer deposited on it by ASET’s helicon sputtering system was investigated. deposition by helicon sputtering was found to produce a smoothing effect on the multilayer. That is, surface roughness with a spatial period below 100nm is smoothed out, but that with a spatial period longer than 100nm is not. The result is that the rms roughness of a Mo∕Si multilayer is slightly smaller than that of the substrate. The EUV reflectivity of the multilayer improved as the rms roughness decreased down to 0.30nm , and than leveled off at about 65% below that value, indicating that the EUV reflectivity is limited by some factor(s) other than surface roughness. However, a relatively high EUV reflectivity of 65% was obtained, even for an rms roughness of about 0.30nm .

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EFFECTS OF MOdIFICATION OF THE CArBIdE CHArACTErISTICS THrOUGH GrAIN BOUNdArY SErrATION ON CrEEP-FATIGUE LIFE IN AUSTENITIC STAINLESS STEELS

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Acta Metallurgica Sinica(English Letters) 2004年第5期17卷 632-638页

作者： K.J.Kim H.U.Hong K.S.Min S.W.Nam Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 KoreaPosco Technical Research Laboratory #1 Koedong-dong Nam-gu Pohang 790-300 KoreaProcess Solution Development Team 1 LCD R&D Center AMLCD Division Device Solution Network Samsung Electronics Co. LTD.San 24 Nongseo-ri Giheung-eup Yongin Gyeonggi-do 449-771 KoreaDept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 Korea

Modification of the carbide characteristics through the grain boundary serration is investigated, using an AISI 316 and 304 stainless steels. In both steels, triangular carbides were observed at straight grain boundaries while planar carbides were observed at the serrated grain boundaries. The serrated grain boundary energy is observed to be much lower than that of the straight one. Therefore, the carbide morphology is found to be changed from triangular to planar along the serrated boundary to reduce the interfacial energy between the carbide and the matrix. The creep-fatigue properties of these steels at 873K have been investigated. The creep-fatigue life of the sample with planar carbide at the serrated grain boundary was found to be much longer than that with triangular carbide at the straight one. These results imply that the planar carbides with lower interfacial energy have higher cavitation resistance, resulting in the retardation of cavity nucleation and growth to increase creep-fatigue life.

关键词： cavity nucleation factor grain boundary serration carbide morphology austenitic stainless steel grain boundary cavitation

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Effect of mask pattern correction for off-axis incident light in extreme ultraviolet lithography

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures processing, Measurement, and Phenomena 2004年第6期22卷 3053-3058页

作者： Minoru Sugawara Iwao Nishiyama Mikio Takai Association of Super-Advanced Electronic Technologies EUV Process Technology Research Laboratory c/o NTT Atsugi R&D Center 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan Osaka University Research Center for Materials Science at Extreme Conditions 1-3 Machikaneyama Toyonaka Osaka 560-8531 Japan

The effect of mask pattern correction for off-axis incident light on the pattern fidelity of a model pattern with 22nm wide lines and spaces was investigated. Corrections were made to the edges of mask patterns, because off-axis incident light produces an asymmetric aerial image. The corrections were found to compensate effectively for the degradation in pattern fidelity due to the influence of off-axis incident light and optical proximity effects. Off-axis incident light causes asymmetry in the positions of pattern edges, the mask error enhancement factor, and pattern edge contrast, even when a symmetric mask pattern layout is designed. It was found that these asymmetries could be suppressed by employing thin buffer and absorber films and a large numerical aperature of projection optics.

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Modeling and control of thermal microsystems 7th

Modeling and control of thermal microsystems

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7th International Symposium on advanced Control of Chemical processes, AdCHEM 2003

作者： Lee, Yong Joon Sung, Su Whan Yoon, dae Sung Lim, Geunbae Park, Sunwon Department of Chemical and Biomolecular Engineering Center for Ultramicrochemical Process Systems Korea Advanced Institute of Science and Technology 373-1 Gusung-dong Yusung-gu Daejon305-701 Korea Republic of Corporate R&D LG Chem. Ltd. Research Park 104-1. Moonji-dong Yusung-gu Daejon305-380 Korea Republic of Biochip Project Team and MEMS Lab Samsung Advanced Institute of Technology San 14 Nongseo-Ri Kiheung-Eup Yongin-City Kyunggi-Do449-712 Korea Republic of

A thermal microsystem is developed which consists of a microreactor integrated with a platinum sensor/heater, and automation equipment/software such as data acquisition system, control program and graphic user interface. From the control point of view, we analyze the dynamic characteristics of the fabricated microreactor and find some interesting dynamic features. On the basis of the analysis, we suggest an appropriate model structure and estimate the model parameters using the prediction error identification method. requirements for a high-performance operation are discussed and a nonlinear control strategy is proposed to linearize the nonlinear dynamics of the thermal microsystem. We determine the parameters of the nonlinear controller using the optimal tuning method. The developed thermal microsystem shows much better control performances compared to commercial polymerase chain reaction (PCr) thermal cyclers. We successfully demonstrate the PCr of plasmid dNA using the thermal microsystem. Copyright © IFAC 2003

关键词： Polymerase chain reaction

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Modeling and Control of Thermal Microsystems

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IFAC Proceedings Volumes 2004年第1期37卷 105-111页

作者： Yong Joon Lee Su Whan Sung dae Sung Yoon Geunbae Lim Sunwon Park Department of Chemical & Biomolecular Engineering and Center for Ultramicrochemical Process Systems Korea Advanced institute of Science and Technology 373-1 Gusung-dong Yusung-gu Daejon 305-701 KOREA Corporate R&D LG Chem. Ltd. Research Park 104-1 Moonji-dong Yusung-gu Daejon 305-380 KOREA Biochip Project Team and MEMS Lab. Samsung Advanced Institute of Technology San 14 Nongseo-Ri Kiheung-Eup Yongin-City Kyunggi-Do. 449-712. KOREA

A thermal microsystem is developed which consists of a microreactor integrated with a platinum sensor/heater, and automation equipment/software such as data acquisition system, control program and graphic user interface. From the control point of view, we analyze the dynamic characteristics of the fabricated microreactor and find some interesting dynamic features. On the basis of the analysis, we suggest an appropriate model structure and estimate the model parameters using the prediction error identification method. requirements for a high-performance operation are discussed and a nonlinear control strategy is proposed to Iinearize the non linear dynamics of the thermal microsystem. We determine the parameters of the non linear controller using the optimal tuning method. The developed thermal microsystem shows much better control performances compared to commercial polymerase chain reaction (PCr) thermal cyclers. We successfully demonstrate the PCr of plasmid dNA using the thermal microsystem.

关键词： Thermal Microsystems System Identification Nonlinear Control PId Controller Polymerase Chain reaction

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Effect of incident angle of off-axis illumination on pattern printability in extreme ultraviolet lithography

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures processing, Measurement, and Phenomena 2003年第6期21卷 2701-2705页

作者： Minoru Sugawara Akira Chiba Iwao Nishiyama Association of Super-Advanced Electronic Technologies EUV Process Technology Research Laboratory c/o NTT Atsugi R&D Center 3-1 Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan

The effect of the incident angle of off-axis illumination on the printability of 22-nm-wide line patterns was investigated for three absorber stack configurations. Shadowing due to off-axis illumination and the absorber wall degrades printability, especially for a dense pattern layout. It was found that the influence of shadowing on resolution and pattern fidelity could be suppressed by employing a small incident angle and thin buffer and absorber films. An incident angle below 6.0° and an absorber stack with an optical density of 2.0 provide a practical level of pattern fidelity. Furthermore, a small incident angle below 5.0° and a thin absorber stack eliminate differences in fidelity for patterns with different orientations with respect to the direction of the off-axis light incident on a mask.

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Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Fabrication of HfSiON gate dielectrics by plasma oxidation a...

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Symposium on VLSI Technology

作者： S. Inumiya K. Sekine S. Niwa A. Kaneko M. Sato T. Watanabe H. Fukui Y. Kamata M. Koyama A. Nishiyama M. Takayanagi K. Eguchi Y. Tsunashima Process and Manufacturing Engineering Center Process and Manufacturing Engineering Center Yokohama Japan SoC Research & Development Center Semiconductor Company Yokohama Japan Advanced LSI Technology Laboratory R&D Center Toshiba Corporation Isogo-ku Yokohama Japan SoC Research & Development Center Semiconductor Company

Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVd Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.

关键词： Fabrication dielectrics Plasma applications Oxidation Hafnium Nitrogen Plasma properties Plasma materials processing Plasma stability CMOS process

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