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Electronics Packaging Technology Conference (EPTC)

作者： MinJae Kong dongHyeon Park Won ree YoungJun Koo JoHyun Bae YeonKi Jeong EunSook Sohn dongSu ryu dongJoo Park Kyungrok Park Advanced Process & Material Project Global R&D center Amkor Technology Korea Inc. Incheon Republic of Korea

ISBN: (数字)9798331522001

ISBN: (纸本)9798331522018

Thermal management of microprocessor chips has emerged as a critical issue to ensure high-power operation, especially in high-performance computing (HPC) applications such as artificial intelligence (AI). To effectively transfer the heat generated from the chip junction to the heat spreader or heat sink, the development of thermal interface materials (TIMs) with high thermal conductivity and the processes for applying them are very active in the electronics packaging industry. In general, polymer-based TIMs have been widely developed and used for their mechanical properties and process workability. However, due to the limitations of polymers, the thermal conductivity required for HPC applications cannot be satisfied. Indium (In) has been widely selected for high power consumption devices as a high dielectric constant (k) TIM due to its high thermal conductivity. However, the low liquidus point of In can be problematic for flip chip lidded ball grid array (FCLBGA) applications since indium may be re-melted during ball attachment reflow, which can reduce TIM coverage [3]. In this paper, indium-silver (InAg)-based alloys were evaluated to develop high thermal conductivity TIM solutions that can be applied to large body FCBGA devices and examines the reliability of indium-silver alloy TIMs under thermal cycling conditions. By varying the silver content, we investigated its impact on mechanical stability and TIM coverage degradation. Indium alloy with higher silver content showed reduced package warpage and fewer voids, as observed through Shadow moire and SAT inspection. In contrast, Indium alloys with lower silver content exhibited more significant structural deformation and void formation Our findings suggest that increasing silver content in indium alloys enhances the TIM coverage and mechanical stability with better thermal performance

关键词： degradation Temperature measurement Silver Conductivity Electronic packaging thermal management Indium Heat sinks Thermal stability Heat transfer Thermal degradation

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reverse Laser Assisted Bonding (r-LAB) Technology for Chiplet Module Bonding on Substrate 24

Reverse Laser Assisted Bonding (R-LAB) Technology for Chiple...

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24th Electronics Packaging Technology Conference, EPTC 2022

作者： Na, SeokHo Gim, MinHo Kim, GaHyeon ryu, dongSu Park, dongJoo Kim, JinYoung Amkor Technology Korea Inc. Advanced Process & Material Development Global R&d Center 150 Songdomirate-ro Yeonsu-gu Incheon Korea Republic of

ISBN: (纸本)9798350398854

There are several chip-to-substrate interconnection technologies in the packaging tool kit such as mass reflow (Mr), thermocompression bonding (TCB) and laser assisted bonding (LAB). Mr is a mature process but has known limitations on fine pitch devices and large/thin substrate packages. TCB has the advantage to minimize bump stress for low-K dielectric devices but its productivity is very low. However, LAB can provide a solution for advanced devices with its localized heating and short bonding time. recently, demand for fine-pitch, Flip Chip bumps and large/thin substrate packages has increased, resulting in industry interest in LAB due to its good quality and high productivity. Amkor Technology invented LAB technology in 2014 and passed qualification for multiple devices from customers through many years of development and has been in high volume production for major customers since 2018. However, as the industry continues to require high bonding performance with various new devices, existing LAB technology may not support all these applications. These devices have led to the development of a new bonding concept, which is reverse laser assisted bonding (r-LAB) technology. r-LAB emits the laser to the bottom side of the substrate through a vacuum stage block, which is opposite laser emission direction to existing LAB. It was developed in 2021 by Amkor Technology and showed promising results for the packages where top LAB does not work. There are several devices that require r-LAB. One is back side metallization (BSM) die. BSM dies are necessary for metal thermal interface material (TIM) applications for high thermal performance packages. Promising results for BSM die were published in recent 72nd ECTC [1]. Other devices that require r-LAB include chiplet module bonding on substrate and drAM packaging in an epoxy molding compound (EMC). A chiplet module is necessary for high-performance applications such as servers, networking, artificial intelligence (AI), graphics

关键词： Substrates

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Fano resonance from Air-mode Photonic Crystal Nanobeam Cavity with 248-nm dUV Lithography

Fano Resonance from Air-mode Photonic Crystal Nanobeam Cavit...

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OptoElectronics and Communications Conference, OECC

作者： Fujun Sun Gang Yang Peng Zhang Bo Tang Zhihua Li Bin Li Yan Yang Integrated Circuit Advanced Process R&D Center of IMECAS Institute of Microelectronics Chinese Academy of Sciences Beijing China

Photonic crystal nanobeam cavity (PCNC) is important building block for large-scale photonic integrated circuits (PICs). Nevertheless, most state-of-the-art demonstrations rely on electron beam lithography (EBL). Here, we experimentally present the characteristics of Fano resonance from air-mode PCNC using 248-nm deep ultraviolet (dUV) lithography for the first time. Experimentally high average Q factor of $\sim 1.58 \times 10^r$ is achieved.

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Various dicing Methods for Silicon Carbide Wafers

Various Dicing Methods for Silicon Carbide Wafers

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Electronics Packaging Technology Conference (EPTC)

作者： YuJin Jeon SeokHo Na MinSoo Gim JoHyun Bae dongSu ryu dongJoo Park Kyungrok Park Advanced Process & Material Project Global R&D Center Amkor Technology Korea Inc Incheon Republic of Korea

Compared to silicon (Si), silicon carbide (SiC) is a promising and more suitable material for higher power semiconductors. Since SiC has a wider bandgap than silicon, it can achieve stable high temperature operation, high thermal conductivity, and high switching speeds. despite its superior technical properties, in a wafer dicing process such as a conventional blade dicing method for Si, SiC is hard and brittle so it cracking can easily occur and propagate. The goal of this study is to find a stable dicing method for SiC wafers. Various existing dicing methods as well as a new technology dicing method, stealth & break, were evaluated and compared in terms of quality and productivity. The results show that a stealth & break process is preferred when requiring high chip-out quality and productivity. Also, scribe & break is suitable for devices where peeling and burr criteria are required. An existing dicing method, such as blade dicing, is not better than others in terms of quality and productivity. However, since blade dicing and laser grooving can be used for both Si and SiC, these methods need to be considered for cost and manufacturing *** study provides pros and cons of each process as well as guidelines on which dicing process is more suitable depending on the manufacturing facility and quality requirements.

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Nanosheet Count Optimization Strategy of Complementary FET (CFET) Scaling Beyond 2 nm From device to Circuit

Nanosheet Count Optimization Strategy of Complementary FET (...

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advanced Patterning Solutions (IWAPS), International Workshop on

作者： Hao He Shixin Li Yanna Luo Haoqing Xu Huaxiang Yin Zhenhua Wu EDA Center Institute of Microelectronics Beijing China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Beijing China

Complementary Field-Effect Transistors is one of the most promising structures for replacing GAA (Gate-All-Around) field-effect transistors while continuing the advancement of Moore's Law. Thus, optimizing its structure is a crucial research direction. This study proposes a nano-sheet count design strategy to address the issue of mismatched electron and hole mobilities in standard CFET cell and a nine-stage ring oscillator (rO). The simulation results demonstrate the effective matching of electron and hole mobilities by adjusting the ratio of NMOS (n-type) and PMOS (p-type) nano-sheet counts, thus enabling the optimization of circuit performance and power consumption for specific applications. In the CFET of the rO unit, a frequency increase of 10% and a capacitance reduction of 6% are achieved with only a 3% increase in power consumption, comparing a CFET with four P-doped nano-sheet channels and two N -doped nano-sheet channels to one with three P-doped nano-sheet channels and three N-doped nano-sheet channels.

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Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio

Method for improving endurance and breakdown characteristics...

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2022 IEEE International Conference on Artificial Intelligence and Computer Applications, ICAICA 2022

作者： Tian, denghuai Xu, Hao Zhang, Jing North China University of Technology School of Information Science and Technology Beijing China Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (数字)9781665499910

ISBN: (纸本)9781665499910

Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices. © 2022 IEEE.

关键词： Economic and social effects

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Extreme Ultraviolet Scatterometry for Characterizing Nanometer Scale Features in a damascene Sample

Extreme Ultraviolet Scatterometry for Characterizing Nanomet...

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2024 Frontiers in Optics, FiO 2024

作者： Klein, C. Jenkins, N. Shao, Y. Li, Y. Park, S. Kim, W. Kapteyn, H. Murnane, M. Department of Physics JILA STROBE NSF Science & Technology Center University of Colorado NIST BoulderCO United States Core Technology R&D Team Mechatronics Research Samsung Electronics Co. Ltd. Hwasung Korea Republic of Advanced Process Development Team 4 Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwasung Korea Republic of Kapteyn-Murnane Laboratories Inc. 4775 Walnut Street #102 BoulderCO80301 United States

We characterize nanoscale out-of-plane features on an industrially relevant semiconductor sample using a coherent extreme ultraviolet high harmonic generation source at 29nm. The advantages of using 13.5nm light are a... 详细信息

关键词： Extreme ultraviolet lithography

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Laser assisted bonding (LAB) mechanism study on the effect of flux dipping, stage block vacuum force and chip attach misalignment

Laser assisted bonding (LAB) mechanism study on the effect o...

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Electronics Packaging Technology Conference (EPTC)

作者： GaHyeon Kim MinHo Gim SeokHo Na WooJun Kim JoHyun Bae dongSu ryu dongJoo Park Kyungrok Park Advanced Process & Material Project Global R&D Center Amkor Technology Korea Inc. Incheon Republic of Korea

In the semiconductor industry, three major bonding technologies are commonly used: mass reflow (Mr, thermocompression bonding (TCB) and laser assisted bonding (LAB). Mr, which is a conventional interconnection method, has been used as a standard for interconnection technology for a long time. However, the limitations of mass reflow from the bump and pad pitch perspective have been predicted for a long time. With Mr it is not easy to make interconnections with very thin die and a coreless substrate and these are major trends in recent packaging structures. Mr has a high warpage, bump tearing due to highest thermal stress. To overcome the mass reflow technical limitation, TCB has appeared to minimize the thermal stress. The TCB process has many advantages such as the lowest thermal stress and the lowest warpage but the weak point of TCB process is very low productivity. With the limitation these two bonding processes, the semiconductor packaging industry focused on the next generation of interconnection technology --- laser assisted bonding. The advantages of the LAB process is a localized heating area that results in lower thermal stress and lower warpage than mass reflow. Also, LAB has very high productivity due to the shortest bonding time. The bonding time of mass reflow is about 5 to 10 minutes but the LAB process is less than 1 second. The comparison of interconnection bonding technologies is summarized in Table *** them, LAB technology has been used for production since 2018 in the industry with technical advantages such as lower thermal budget with localized short heating and lower substrate warpage by stage block vacuum suction, etc. recently, advanced flip chip packaging requires advanced bonding technology. With the industry’s interest in LAB, it will be even more popular. However, at this moment, a better understanding is required of the fundamental bonding *** paper provides the results of studying the LAB bump interconnection mechanism bas

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Effects of heat treatments on microstructures of TiAl alloys

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International Journal of Minerals,Metallurgy and Materials 2022年第6期29卷 1225-1230页

作者： Wen Yu Jianxin Zhou Yajun Yin Zhixin Tu Xin Feng Hai Nan Junpin Lin Xianfei ding State Key Laboratory of Materials Processing and Die and Mould Technology Huazhong University of Science and TechnologyWuhan 430074China Cast Titanium Alloy R&D Center Beijing Institute of Aeronautical MaterialsBeijing 100095China Beijing Engineering Research Center of Advanced Titanium Alloy Precision Forming Technology Beijing 100095China Beijing Institute of Aeronautical Materials Co. Ltd.Beijing 100094China State Key Laboratory for Advanced Metals and Materials University of Science and Technology BeijingBeijing 100083China

This study aims to investigate the effects of heat treatments on the microstructure ofγ-TiAl *** Ti-47Al-2Cr-2Nb alloy ingots were manufactured by casting method and then heat-treated in two types of heat *** microstructures were studied by both optical and scanning electron *** chemical compositions of two ingots were determined as *** ingot with lower Al content only obtains lamellar structures while the one higher in Al content obtains nearly lamellar and duplex structures after heat treatment within1270 to 1185℃.A small amount of B2 phase is found to be precipitated in both as-cast and heat-treated *** are distributed at grain boundaries when holding at a higher temperature,such as 1260℃.However,B2 phase is precipitated at grain boundaries and in colony interiors simultaneously after heat treatments happened at 1185℃.Furthermore,the effects of heat treatments on grain refinement and other microstructural parameters are discussed.

关键词： TiAl alloys microstructure heat treatment casting

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Computational Strategies for rTN Model for Supply Logistics of Carbon dioxide for Carbon Capture and Storage

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Industrial & Engineering Chemistry research 2025年第23期64卷 11515-11530页

作者： Soumya Shikha Joelle Guisso Anna robert Nouha dkhili Parveen Kumar Ignacio E. Grossmann Department of Chemical Engineering and Center for Advanced Process & Decision Making Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States TotalEnergies R&D 2 Place Jean Miller Paris La Defense Cedex Courbevoie 92078 France

In this paper, we address the solution of a large-scale mixed-integer linear programing (MILP) model to maximize profit for shipping cryogenic carbon dioxide in Carbon Capture and Storage field management systems. The model is based on a discrete-time resource Task Network as discussed in Guisso et al. (2024), where inventory levels of carbon dioxide at the ports are determined along with the decision variables determined at each time interval. To solve the resulting large-scale MILP model, decomposition techniques based on bilevel decomposition and two-stage optimization decomposition are first proposed for the simpler case where trips (or milk runs) between emitter ports are not considered. For the real-life case that allows milk runs, a Lagrangean decomposition is proposed with a shrinking time horizon strategy for the solution of subproblems for long time horizons. Numerical results are presented to illustrate the application of the proposed decomposition techniques, which show that significant computational savings up to 1 order of magnitude reduction can be achieved.

关键词： Integer programming

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