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Electronics Packaging Technology Conference (EPTC)

作者： SeokHo Na MinHo Gim GaHyeon Kim dongSu ryu dongJoo Park JinYoung Kim Advanced Process & Material Development Global R&D Center Amkor Technology Korea Inc. Incheon Republic of Korea

ISBN: (纸本)9798350398861

There are several chip-to-substrate interconnection technologies in the packaging tool kit such as mass reflow (Mr), thermocompression bonding (TCB) and laser assisted bonding (LAB). Mr is a mature process but has known limitations on fine pitch devices and large/thin substrate packages. TCB has the advantage to minimize bump stress for low-K dielectric devices but its productivity is very low. However, LAB can provide a solution for advanced devices with its localized heating and short bonding time. recently, demand for fine-pitch, Flip Chip bumps and large/thin substrate packages has increased, resulting in industry interest in LAB due to its good quality and high productivity. Amkor Technology invented LAB technology in 2014 and passed qualification for multiple devices from customers through many years of development and has been in high volume production for major customers since 2018. However, as the industry continues to require high bonding performance with various new devices, existing LAB technology may not support all these applications. These devices have led to the development of a new bonding concept, which is reverse laser assisted bonding (r-LAB) technology. r-LAB emits the laser to the bottom side of the substrate through a vacuum stage block, which is opposite laser emission direction to existing LAB. It was developed in 2021 by Amkor Technology and showed promising results for the packages where top LAB does not work. There are several devices that require r-LAB. One is back side metallization (BSM) die. BSM dies are necessary for metal thermal interface material (TIM) applications for high thermal performance packages. Promising results for BSM die were published in recent 72 nd ECTC [1]. Other devices that require r-LAB include chiplet module bonding on substrate and drAM packaging in an epoxy molding compound (EMC). A chiplet module is necessary for high-performance applications such as servers, networking, artificial intelligence (AI), graphi

关键词： Performance evaluation Productivity Industries Lasers Surface emitting lasers Packaging Electromagnetic compatibility

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Microstructure and Mechanical Properties of Adjustable-ring-Mode Laser Welded And Hot-Stamped Al-Si Coated Boron Steel Joints

SSRN

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SSrN 2023年

作者： Jun, Hyun-Uk Kim, Jae-deuk Cheon, Jooyong Kim, Jaehun Park, Yeong-do Kim, Yang-do Ji, Changwook Department of Materials Science and Engineering Pusan National University Busan46241 Korea Republic of Advanced Forming Process R&D Group Korea Institute of Industrial Technology Ulsan44413 Korea Republic of Department of Advanced Materials Engineering Dong-Eui University Busan47227 Korea Republic of

The microstructure and mechanical properties of adjustable-ring-mode (ArM) laser-welded, hot-stamped 22MnB5 steel joints were analyzed and compared with those of Al–Si coated 22MnB5. Al segregation into the fusion zone (FZ) was suppressed by a ring beam introduced via ring-beam-mode (rBM) and dual-beam-mode (dBM) laser welding. dilution of the Al–Si coating in the FZ induced α-ferrite formation during hot stamping. After hot stamping, the α-ferrite fraction in the FZ decreased (from 23 vol% to 4.27 vol%) more than that in the center-beam-mode (CBM) welded joints owing to the ring beam. Electron backscattered diffraction analysis indicated the distribution of high-density and uniform geometrically necessary dislocations, which caused coordinated deformation in the martensite grains, in the rBM and dBM FZs. The average microhardness in the FZ in the tailor-welded blank (TWB) joints was ~ 30–40 HV lower than that in the rBM and dBM welded base metal (480 HV) and that in the FZ of the CBM reduced to 295 HV because of the formation of a large amount of ductile α-ferrite. The tensile strength and elongation of the TWB joint in the CBM were ~989 MPa and 1.1 %, respectively, which were significantly lower than those of the rBM (1245 MPa and 1.96 %, respectively) and dBM (1321 MPa and 2.12 %, respectively). Finally, the 22MnB5 steel sheets were subjected to ArM laser welding without removing the coating layer to evaluate the eﬀect of the ring beam on Al segregation suppression in the FZ and mechanical properties of the TWB joints. © 2023, The Authors. All rights reserved.

关键词： Microstructure

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Hybrid Simulation Method of Quantum Characteristics for advanced Si Mosfets Under Extreme Conditions by Incorporating Simplified Master Equation with Tcad

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SSrN 2024年

作者： Zhu, Xiaohui Yin, Huaxiang Integrated Circuit Advanced Process R&D Center State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics The Chinese Academy of Sciences Beijing Beijing100029 China University of Chinese Academy of Sciences Beijing Beijing100049 China

Silicon (Si)-based quantum-dot (Qd) device by advanced CMOS process is one of important technologies for quantum computing application and currently, it needs a fast and accurate quantum characteristics simulation for designing and optimizing the devices. In this paper, for the first time, a fast hybrid simulation method is proposed by incorporating simplified quantum master equation model with the traditional TCAd tool. Additionally, a SPICE MOdEL is incorporated for transient current correction to achieve results closer to real observations. The Qd devices forming on advanced stacked Si nanowire (NW) and stacked Si nanosheet (NS) are constructed and simulated by this method, yielding Coulomb diamond plot and charge energies for different structures at 1K. Notably, a Coulomb blockade region of approximately 82mV and a first Coulomb step width approximately 1.6 times wider than the blockade region are observed, consistent with theoretical expectations and confirming the method's efficacy. Simulation characteristics of advanced diamond-like channel devices are obtained within 1277 seconds, demonstrating over 85% matching with experimental data. Meanwhile, the influence of quantum characteristics varying with the transistor’s structure and process parameters is also analyzed, which in turn provide a guidance for the design and the optimization of the Qd device by advanced Si CMOS process. © 2024, The Authors. All rights reserved.

关键词： Silicon

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Microstructures and mechanical behavior of the bimetallic additively-manufactured structure(BAMS)of austenitic stainless steel and Inconel 625

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Journal of Materials Science & Technology 2021年第15期74卷 176-188页

作者： Md.r.U.Ahsan Xuesong Fan Gi-Jeong Seo Changwook Ji Mark Noakes Andrzej Nycz Peter KLiaw duck Bong Kim Department of Mechanical Engineering Tennessee Technological UniversityCookevilleTN38505United States Department of Materials Science and Engineering The University of TennesseeKnoxvilleTN37996United States Department of Manufacturing and Engineering Technology Tennessee Technological UniversityCookevilleTN38505United States Advanced Forming Process R&D Group Korea Institute of Industrial TechnologyUlsan 44413South Korea Oak Ridge National Laboratory Oak RidgeTN37830United States

Bimetallic additively manufactured structures(BAMSs)can replace traditionally-fabricated functionallygraded-components through fusion welding processes and can eliminate locally-deteriorated mechanical properties arising from *** present work fabricates a BAMS by sequentially depositing the austenitic stainless-steel and Inconel625 using a gas-metal-arc-welding(GMAW)-based wire+arc additive manufacturing(WAAM)*** mapping shows a smooth compositional transition at the interface without any *** materials being the face-center-cubic(FCC)austenite,the electron backscattered diffraction(EBSd)analysis of the interface shows the smooth and cross-interfacecrystallographic growth of long-elongated grains in the<001>*** hardness values were within the range of 220-240 HV for both materials without a large deviation at the *** to the controlled thermal history,mechanical testing yielded a consistent result with the ultimate tensile strength and elongation of 600 MPa and 40%,respectively,with the failure location on the stainless-steel *** study demonstrates that WAAM has the potential to fabricate BAMS with controlled properties.

关键词： WAAM Additive manufacturing BAMS Functionally-graded structures Microstructures Mechanical properties

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diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

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Physical review Applied 2025年第2期23卷 024065-024065页

作者： Ming Ni rong-Long Ma Zhen-Zhen Kong Ning Chu Sheng-Kai Zhu Chu Wang Ao-ran Li Wei-Zhu Liao Gang Cao CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui 230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 230026 China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China Hefei National Laboratory University of Science and Technology of China Hefei 230088 China

On the path toward large-scale quantum information processing, the ability to implement diverse types of two-qubit gates is preferable for device structure designs and quantum circuit compilations. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme for spin qubits based on semiconductor quantum dots. Theoretical results indicate that the gate scheme facilitates the simultaneous implementation of various types of two-qubit gates, including five types of essential two-qubit gates, iswap-family gates, and fermionic simulation gates. Furthermore, we observe an excellent match between the measured and simulated results, representing the preliminary experimental demonstration of the composite gate scheme. We believe that, with this versatile composite two-qubit gate scheme, the available broad-spectrum two-qubit operations will allow us to efficiently utilize the hardware resources and accelerate the advancement of noisy intermediate-scale quantum computing.

关键词： Semiconductor quantum dots

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Effect of Additional Side Shielding on the Wire Arc Additive Manufacturing of Az31 Magnesium Alloy

SSRN

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SSrN 2023年

作者： Kim, Jae-deuk Jun, Hyun-Uk Cheon, Jooyong Kim, Jaewon Kim, Jae-Hun Ji, Changwook Kim, Yang-do Department of Materials Science and Engineering Pusan National University Busan46241 Korea Republic of Advanced Forming Process R&D Group Korea Institute of Industrial Technology Ulsan44413 Korea Republic of Production Technology Research Center Samsung Heavy Industries Co. Ltd Gyeongsangnam-do Geoje-Si53261 Korea Republic of

Magnesium (Mg) alloys have a low density among the structural metals, but it is hard to be plastically deformed due to their crystallographic nature. Wire arc additive manufacturing (WAAM) could be one of the alternative processes to fabricate the Mg products for various industrial applications. Nonetheless, it has not been yet barely used in industrial fields due to challenging issues such as low commercial availability of wire, high oxygen affinity, explosive and flammable hazard, and typical defects of WAAM like distortion and side collapse, grain coarsening, etc. In this research, it was tried to find out the better way to fabricate the WAAM of AZ31 alloy. An additional side shielding was given for global shielding during the WAAM process, and compared with the conventional shielding method. It was observed that the global shielding affects the microstructural evolution of the WAAM product, and influences the mechanical property in a positive way. © 2023, The Authors. All rights reserved.

关键词： 3d printing

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Phase stability and mechanical properties of wire+arc additively manufactured H13 tool steel at elevated temperatures

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Journal of Materials Science & Technology 2021年第8期67卷 80-94页

作者： A.N.M.Tanvir Md.r.U.A hsan Gijeong Seo Brian Bates Chanho Lee Peter K.Liaw Mark Noakese Andrzej Nycz Changwook Ji duck Bong Kim Department of Mechanical Engineering Tennessee Technological UniversityCookevilleTN 38505USA Department of Manufacturing and Engineering Technology Tennessee Technological UniversityCookevilleTN 38505USA Center for Manufacturing Research Tennessee Technological UniversityCookevilleTN 38505USA Department of Materials Science and Engineering University of TennesseeKnoxvilleTN 37996USA Manufacturing Demonstration Facility Oak Ridge National LaboratoryOak RidgeTN 37830USA Advanced Forming Process R&D Group Korea Institute of Industrial TechnologyUlsan 44413Republic of Korea

Wire+arc additive manufacturing(WAAM)is considered an innovative technology that can change the manufacturing landscape in the near *** offers the benefits of inexpensive initial system setup and a high deposition rate for fabricating medium-and large-sized parts such as die-casting *** this study,AISI H13 tool steel,a popular die-casting tool metal,is manufactured by cold metal transfer(CMT)-based WAAM and is then comprehensively analyzed for its microstructural and mechanical ***-dependent phase combinations are observed,which could be explained by nonequilibrium thermal cycles that resulted from the layer-by-layer stacking mechanism used in *** addition,remelting and reheating of the layers reduces welding anomalies(e.g.,pores and voids).The metallurgical characteristics of the H13 strongly correlate with the mechanical *** combinations of phases at different locations of the additively manufactured part exhibit a periodic microhardness ***,retained Austenite,Ferrite,and Carbide phases are found in combination at different locations of the part based on the part’s temperature distribution during additive ***,the tensile properties at elevated temperatures(23℃,300℃,and 600℃)are comparable to those from other WAAM and additive manufacturing(AM)*** X-ray diffraction results verify that the microstructural stability of the fabricated parts at high temperatures would allow them to be used in high temperatures.

关键词： Tool steel Martensitic steel Wire+arc additive manufacturing(WAAM) High temperature tensile test High temperature Xrd

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robustly stable intermediate memory states in HfO_(2)-based ferroelectric field-effect transistors

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Journal of Materiomics 2022年第3期8卷 685-692页

作者： Chen Liu Binjian Zeng Siwei dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China College of Civil Engineering and Mechanics Xiangtan UniversityXiangtan411105China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710071China Integrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences Beijing100029China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an710071China

Multilevel ferroelectric field-effect transistors(FeFETs)integrated with HfO_(2)-based ferroelectric thin films demonstrate tremendous potential in high-speed massive data storage and neuromorphic computing ***,few works have focused on the stability of the multiple memory states in the HfO_(2)-based *** we firstly report the write/read disturb effects on the multiple memory states in the Hf_(0.5)Zr_(0.5)O_(2)(HZO)-based *** multiple memory states in HZO-based FeFETs do not show obvious degradation with the write and read disturb ***,the retention characteristics of the intermediate memory states in HZO-based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric *** the deep analysis of the operation principle of in HZO-based FeFETs,we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization *** experimental and theoretical evidences confirm that the long-term stability of the intermediate memory states in HZO-based FeFETs are as robust as that of the saturated memory state,laying a solid foundation for their practical applications.

关键词： Ferroelectric fieldeffect transistors(FeFETs) Hf_(0.5)Zr_(0.5)O_(2)(HZO) Multiple memory states Write/read disturb retention

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Co-production of hydrochar and bioactive compounds from Ulva lactuca via a hydrothermal process

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Carbon resources Conversion 2024年第1期7卷 1-9页

作者： Edy Hartulistiyoso Obie Farobie Latifa A Anis Novi Syaftika Asep Bayu Apip Amrullah Navid r.Moheimani Surachai Karnjanakom Yukihiko Matsumura Department of Mechanical and Biosystem Engineering IPB UniversityBogorWest Java 16002Indonesia Surfactant and Bioenergy Research Center(SBRC) IPB UniversityBogorWest Java 16144Indonesia Research Centre for Industrial Process and Manufacturing Technology National Research and Innovation Agency(BRIN)TangerangSelatanIndonesia Research Center for Vaccine and Drugs National Research and Innovation Agency(BRIN)BogorWest Java 16911Indonesia Department of Mechanical Engineering Lambung Mangkurat UniversityBanjarmasinSouth KalimantanIndonesia Algae R&D Centre Harry Butler InstituteMurdoch UniversityMurdochWA 6150Australia Department of Chemistry Rangsit UniversityPathumthani 12000Thailand Graduate School of Advanced Science and Engineering Hiroshima University1-4-1 KagamiyamaHigashi-Hiroshima 739-8527Japan

This study investigates the simultaneous production of hydrochar and bioactive compounds from Ulva lactuca via a hydrothermal *** experiment was carried out using a batch reaction vessel at different reaction temperatures of 180-220◦C and various holding times of 30-90 *** expected,both temperature and time vigorously influenced hydrochar and bioactive compound *** maximum hydrochar yield was at 32.4 wt%.The higher heating value(HHV)of hydrochar was observed in the range of 17.68-21.07 MJ kg^(-1),near the energy content of low-rank *** hydrochars exhibited contact angles higher than 90°(i.e.,94-108°)for a longer time,confirming their hydrophobic *** scanning electron microscope analysis(SEM)showed that the hydrothermal process enables cracks in the spherical shape of raw *** into small and porous *** producing hydrochar,the hydrothermal process of *** also gives promising antioxidants and phenolics as bioactive *** highest total phenolic content and antioxidant activity could be achieved in hydrolysate at 200℃and 30 min with the value of 1.20±0.12 mg/g and 71.6±1.3%,respectively.

关键词： Algae Bioactive compound Hydrochar Hydrothermal Seaweed

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Interface Treatment of Epitaxial SI FINFET Channel in replace Metal Gate with Simultaneously Performance Improvement and Leakage reduction

Interface Treatment of Epitaxial SI FINFET Channel in Replac...

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China Semiconductor Technology International Conference (CSTIC)

作者： renjie Jiang Lei Cao Wenjuan Xiong Jiaxin Yao Peng Wang Yadong Zhang Guanqiao Sang Lianlian Li Meihe Zhang Huaxiang Yin Jun Luo Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China State key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350362190

ISBN: (纸本)9798350362206

Channel surface defects are an important factor causing poor device interface characteristics and deterioration of sub-threshold characteristics. In order to reduce the interface trap density (dit) of epitaxial silicon FinFET devices and improve device performance, an in-situ steam generation (ISSG) oxidation and diluted hydrofluoric acid (dHF) cleaning method was proposed to repair the damaged channel surface and reduce the interface defect charge (Q it ) replace metal gate (rMG) module. The thickness of Fin top narrows, and Fin's steepness decreases, after interfacial ISSG oxidation treatment. The electrical results demonstrate that the SS for the NFET with interface treatment are decreased from 74.2 mv/dec to 70.97 mV/dec due to the interface improvement. At the same time, the leakage current reduced from 1.0E-2 μA to 5.67E-4 μA, and the Ion is increased by 16.89% compared with that of conventional FinFET without interface treatment.

关键词： Metals dH-HEMTs Maintenance engineering Logic gates FinFETs Oxidation Silicon

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