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Metallographic Sample Preparation and Characterisation of Oxide Scales on Hot-rolled Steel Strips

Microscopy and Microanalysis 2015年第S3期21卷 2269-2270页

作者： Oktay Elkoca Kemal davut Eregli Iron and Steel Works Inc. Hot Rolled Products and Process R&D Dept. Eregli Zonguldak Turkey Atilim University Metal Forming Center of Excellence Incek Ankara Turkey Atilim University Department of Metallurgical and Materials Engineering Incek Ankara Turkey

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20nm drAM: A new beginning of another revolution

20nm DRAM: A new beginning of another revolution

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International Electron devices Meeting (IEdM)

作者： J. M. Park Y. S. Hwang S.-W. Kim S. Y. Han J. S. Park J. Kim J. W. Seo B. S. Kim S. H. Shin C. H. Cho S. W. Nam H. S. Hong K. P. Lee G. Y. Jin E. S Jung DRAM Technology Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Process Architecture Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Process Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Advanced Core Equipment Engineering & Development P/J Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Product & Technology Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea

For the first time, 20nm drAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.

关键词： random access memory Capacitors Lithography Capacitance Honeycomb structures Metals Computer architecture

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Manufacture of μ-PIM gear mold by electroforming of Fe-Ni and Fe-Ni W alloys

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Transactions of Nonferrous Metals Society of China 2013年第2期23卷 366-371页

作者： Seong Ho SON Sung Cheol PArK Wonsik LEE Hong-Kee LEE Heat Treatment & Plating Technology Center Korea Institute of Industrial Technology Advanced Fusion Process R&D Group Korea Institute of Industrial Technology

The micro gear mold for powder injection molding was made by electroforming process of Fe-Ni and Fe-Ni-W alloys using UV-lithography process. Kinetics and activation energies in electroplating of both alloys were investigated to determine the best process conditions. Fe content within electrodeposited Fe-Ni alloys increased with the increase of rotating disk speed and the decrease of temperature and it is considered from the calculated activation energy of iron content that the rate determining step is controlled by mass transfer. Iron content in Fe-Ni electrodeposit varied from 58.33% to 70.45% by increasing current density from 2 to 6 A/drn2. Also, iron content in Fe-Ni-W electrodeposit increased from 59.32% to 70.15%, nickel content decreased from 27.86% to 17.07% and the content of tungsten was almost consistent in the range of 12.78%-12.82% although the current density increases from 1.5 to 5 A/dm^2. For the electroforming of micro gear mold, SU-8 mandrel with 550 μm in diameter and 400 μm in height was prepared by UV-lithography processing. Subsequently, Fe-36Ni and Fe-20Ni-13W alloys micro gear molds were electroformed successfully. Surface hardness values of the electroformed micro molds were measured to be HV490 and HV645, respectively.

关键词： electroforming Fe-Ni alloy Fe-Ni-W alloy gear mold PIM

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18th European Symposium on radiopharmacy and radiopharmaceuticals Salzburg, Austria. 7-10 April 2016

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EJNMMI rAdIOPHArMACY ANd CHEMISTrY 2016年第1期1卷 1-37页

作者： [Anonymous] Los Alamos National Laboratory Los Alamos USA Oak Ridge National Laboratory Oak Ridge USA Department of Nuclear Medicine Medical University Innsbruck Innsbruck Austria Department of Radiology & Nuclear Medicine Radboud University Medical Center Nijmegen The Netherlands Institute of Molecular and Translational Medicine Faculty of Medicine and Dentistry Palacky University Olomouc Czech Republic Département de Médecine Nucléaire et Radiobiologie Faculté de Médecine et Sciences de la Santé Université de Sherbrooke Sherbrooke Canada Centre d’Imagerie Moléculaire de Sherbrooke (CIMS) CR-CHUS Sherbrooke Canada Division of Molecular Biology/Biocenter Medical University Innsbruck Innsbruck Austria Department of Nuclear Medicine Radboud University Medical Center Nijmegen The Netherlands IENI-CNR Padua Italy DiSCOG-University of Padua Padua Italy IOV Padua Padua Italy IC-CNR Bari Italy IBB-CNR Naples Italy Laboratory of Radiopharmacy KU Leuven Leuven Belgium Micro Flow Chemistry & Process Technology Chemical Engineering and Chemistry Department TU Eindhoven Eindhoven The Netherlands Laboratory for Radiopharmacy University of Leuven Leuven Belgium Department of Nuclear Medicine and Molecular Imaging University of Leuven Leuven Belgium Department of Medicine and Surgery Tecnomed Foundation University of Milano-Bicocca Milan Italy Dipartimento di Biotecnologie Mediche e Medicina Traslazionale Università degli Studi di Milano Milan Italy Department of Radiology & Nuclear Medicine VU University Medical Center Amsterdam The Netherlands Department of Clinical Pharmacology & Pharmacy VU University Medical Center Amsterdam The Netherlands Université de Lorraine Vandoeuvre les Nancy France NancycloTEP Plateforme d’imagerie expérimentale Vandoeuvre les Nancy France CNRS UMR 7565 SRSMC Vandoeuvre les Nancy France CHU de Nancy-Brabois Vandoeuvre les Nancy France Department of Biomedical Imaging and Image-guided Therapy Division of Nuclear Medicine Medical Univers

Table of contents OP03 Selective extraction of medically-related radionuclides from proton-irradiated thorium targets V. radchenko, J.W. Engle, C. roy, J. Griswold, M.F. Nortier, E.r. Birnbaum, M. Brugh, S. Mirzadeh, K. d. John, M.E. Fassbender OP04 Comparison of [68Ga]FSC(succ-rGd)3 and [68Ga]NOdAGA-rGd for PET imaging of alpha v beta 3 integrin expression Chuangyan Zhai, Gerben M. Franssen, Milos Petrik, Peter Laverman, Clemens decristoforo OP05 A new NPY-Y1r targeting peptide for breast cancer PET imaging Ait-Mohand Samia, dumulon-Perreault Veronique, Guerin Brigitte OP06 The influence of multivalency on CCK 2 receptor targeting d. Summer, A. Kroess, C. rangger, H. Haas, P. Laverman, F. Gerben, E. von Guggenberg, *** OP07 SPECT Imaging of alpha v beta 3 Expression by [99mTc(N)PNP43]- Bifunctional Chimeric rGd Peptide not Cross-reacting with alpha v beta 5 Cristina Bolzati, Nicola Salvarese, Fiorenzo refosco, Laura Melendez-Alafort, debora Carpanese, Antonio rosato, Michele Saviano, Annarita del Gatto, daniela Comegna, Laura Zaccaro OP09 New dienophiles for the inverse-electron-demand diels-Alder reaction and for pretargeted PET imaging Emilie Billaud, Muneer Ahamed, Frederik Cleeren, Elnaz Shahbazali, Tim Noel, Volker Hessel, Alfons Verbruggen and Guy Bormans OP10 New complexing agent for Al18F-labelling of heat-sensitive biomolecules: Synthesis and preclinical evaluation of Al18F-rESCA1-HAS Cleeren F, Lecina J, Koole M, Verbruggen A and Bormans G OP11 A novel versatile precursor efficient for F-18 radiolabelling via click-chemistry B. Lugatoa, S. Stucchia, E.A. Turollaa, L. Giulianoa, ***, P. Ferraboschib OP12 A general applicable method to quantify unidentified UV impurities in radiopharmaceuticals r.P. Klok, M.P.J. Mooijer, N.H. Hendrikse, A.d. Windhorst OP13 development of [F-18]Fluoro-C-glycosides to radiolabel peptides Collet C., Petry N., Chretien F., Karcher G., Pellegrini-Moise N., Lamande-Langle S. OP14 A Microfluidic Approach for the 68

关键词： Positron Emission Tomography Single Photon Emission Compute Tomography Standard Uptake Value Positron Emission Tomography Imaging High Pressure Liquid Chromatography

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Fabrication of silicon-based MEMS capacitive microphone structure with thin starting wafer

Fabrication of silicon-based MEMS capacitive microphone stru...

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International Conference on ASIC

作者： Xiaoxu Kang Chao Yuan Qingyun Zuo Changwa Yao Shoumian Chen Yuhang Zhao Yilin Yan Yuanjun Xu Weiping Zhou Process Technology Department Shanghai IC R&D Center Shanghai China Advanced Semiconductor Manufacturing Corporation Limited China

In this work, silicon-based MEMs capacitive microphone was designed and fabricated on 150 mm CMOS Line. 400 um thin wafer was used as starting wafer, which can greatly reduce process integration complexity accompany with the reduced cost. Low-stress poly film was used as back-plate and membrane. CMOS BEOL Al film was used as PAd for the back-plate and membrane. To make better control of wafer bowing induced by thinner wafer and in-film stress, optimized integration scheme and module process were developed. CV test was done to check the wafer-level microphone performance. From the CV data, C0 (initial capacitance at 0 V) is about 4.8 pF, and pull-in voltage is about 13.5 V. A fast wafer-level reliability test was done to check the structure/process performance. From the data comparison between initial values and values after cycles of stressed pulse, the process can meet the device requirements.

关键词： Microphones Films Stress CMOS integrated circuits process control Performance evaluation Semiconductor device reliability

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A TCAd study of substrate dopant for extremely thin SOI MOSFETs with Ultra-thin buried oxide

A TCAD study of substrate dopant for extremely thin SOI MOSF...

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2012 International Conference on Simulation of Semiconductor processes and devices, SISPAd 2012

作者： Wu, Hao Tong, Xiaodong Xu, Miao Xiao, Weiping Wu, Binneng Zhu, Huilong Liang, Qingqing Zhao, Lichuan Zhong, Huicai Luo, Zhijiong Yin, Haizhou Xu, Qiuxia Zhao, Chao Cheng, dapeng Ye, Tianchun IC Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9780615717562

In this paper, the effects of dopant distribution in substrate/ back-gate, back bias and metal gate work-function on performance and Vt roll-off of Extremely-Thin Silicon-On- Insulator (ETSOI) MOSFETs with Ultra-Thin Buried OXide (UTBOX) (ES-UB- MOSFETs) were simulated and studied. Lateral Non-uniform dopant distribution (LNdd) in substrate was used to enhance scaling capability and improve Vt controllability for ES-UB- MOSFETs. process and device simulations were conducted to demonstrate the importance of substrate dopant engineering and to search the optimization design conditions for ES-UB-MOSFETs. Fixing long channel Vt at ±0.3V for ES-UB-MOSFETs, LNdd enables gate length to be scaled to 20nm for both n- and p-MOS, which is ~ 10% smaller than that of the ES-UB-MOSFETs with lateral uniform doping in substrate. A novel process flow to form LNdd was proposed and simulated. © 2012 IEEE.

关键词： Substrates

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A Study On the removal Method of Si residue during Si Wet Etch

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ECS Meeting Abstracts 2013年第30期MA2013-02卷

作者： Kihyung Ko Hayoung Jeon Myunggeun Song Boun Yoon Chilgi Lee Taesung Kim Samsung Electronics Co. Process Development Team Semiconductor R&D Center Samsung Electronics Co School of Information and Communication Engineering Sungkyunkwan University SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Department of Mechanical Engineering Sungkunkwan University Sungkunkwan University

Abstract not Available.

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Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon

Separation of NBTI component from channel hot carrier degrad...

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IEEE International Conference on Integrated Circuit design and Technology (ICICdT)

作者： Y. Mitani S. Fukatsu d. Hagishima K. Matsuzawa Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation Yokohama Japan Device Process Development Center Toshiba Corporation Japan

Channel hot-carrier (CHC) degradation becomes more critical as the channel length is reduced. In general, CHC degradation is evaluated using dC stress applying both gate and drain bias. However, in the case of p-channel MOSFETs, negative bias temperature instabilities (NBTI) also degrades threshold voltage (V TH ) and saturation drain current (I sat ) under dC stress applying gate bias. Therefore, CHC degradation might include the NBTI component, which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple separation method of NBTI and CHC component from CHC test data is proposed, focusing on the recovery phenomenon, which is a distinctive behavior of NBTI.

关键词： degradation Stress Logic gates MOSFETs Hot carriers Substrates

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Simulations of FdSOI CMOS with Sharing Contact between Source/drain and Back Gate

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ECS Transactions 2011年第1期34卷

作者： Miao Xu Qingqing Liang Huilong Zhu Haizhou Yin Zhijiong Luo dapeng Chen Tianchun Ye Institute of Microelectronics IC Advanced Process R&D Center Chinese Academy of Sciences No.3 BeiTuCheng West Rd Beijing Beijing 100029 China Institute of Microelectronics Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences No.3 BeiTuCheng West Rd. Beijing Beijing 100029 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences

In this paper, a new ultra-thin fully-depleted SOI CMOS structure with sharing contact between source/drain and back gate is presented to save area and increase threshold voltage tuning capability. TCAd simulations are used to investigate the back-gate effect on the ultra-thin SOI CMOS. A new process flow to make the fully-depleted SOI CMOS structures is also proposed.

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Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation

Transition of erase mechanism for MONOS memory depending on ...

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Annual International Symposium on reliability Physics

作者： Shosuke Fujii Jun Fujiki Naoki Yasuda ryota Fujitsuka Katsuyuki Sekine Advanced LSI Technology Laboratory Corporate R&D Center Toshiba Corporation Yokohama Japan Process & Manufacturing Engineering Center Toshiba Corporation Yokohama Japan

We clarify the origin of erase improvement in MONOS memories with Si-rich SiN layer, and investigate the impact of erase mechanism on cycling degradation. It is demonstrated that cycling degradation is uniquely determined by charges injected during erase operations irrespective of program/erase condition, number of program/erase cycling, or MONOS structure.

关键词： MONOS devices Silicon compounds degradation Capacitance-voltage characteristics Charge carrier processes Nonvolatile memory Capacitors distributed control Aluminum oxide Channel bank filters

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