A novel fabrication process,based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs,AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes(rTd),and t...
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A novel fabrication process,based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs,AlAs/InAs/GaAs quantum dots double berrier quantum well sub-micron resonant tunneling diodes(rTd),and the peak to valley current ratio could be over 20.A new model of multilevel logic SrAM with rTds was proposed.
Novel stacked cell capacitors with (Ba,Sr)TiO 3 (BST) films were prepared as dielectrics for Gbit-scale drAMs. The BST films were deposited by the liquid source chemical vapordeposition (CVd) method, andru was used ...
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A brain-enriched human FC96 protein shows a close sequence similarity to the dictyosielium discoideum protein coronin, which is implicated in cell motility, cytokinesis, and phagocytosis. A phylogenetic tree analysis ...
A brain-enriched human FC96 protein shows a close sequence similarity to the dictyosielium discoideum protein coronin, which is implicated in cell motility, cytokinesis, and phagocytosis. A phylogenetic tree analysis revealed
We propose a robust estimatordesign to solve the forward kinematics in 6 dOF motion bed (Stewart platform). The stability of the proposed estimator is proved via Lyapunov stability analysis and the estimator guarante...
functional simulation is the most widely used method fordesign verification. At various levels of abstraction, e.g., behavioral, register-transfer level and gate level, the designer simulates the design using a large...
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ISBN:
(纸本)9780818675973
functional simulation is the most widely used method fordesign verification. At various levels of abstraction, e.g., behavioral, register-transfer level and gate level, the designer simulates the design using a large number of vectors attempting to debug and verify the design. A major problem with functional simulation is the lack of good metrics and tools to evaluate the quality of a set of functional vectors. Metrics used currently are based on instruction counts and are quite simplistic. designers are forced to use ad-hoc methods to terminate functional simulation, e.g. CPU time limitations. We propose a new metric for measuring the extent of design verification provided by a set of functional simulation vectors. This metric is universal, and can be used uniformly for all designs. Our metric computes observability information to determine whether effects of errors that are activated by the program stimuli can be observed at the circuit outputs. We provide preliminary experimental evidence that supports the validity of the proposed metric. We believe that using this metric in design verification will result in higher-quality functional checking. tests and improved correctness
In this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECr) plasma on the reactive ion etching (rIE) properties of ruO2 film such as etch rate, sel...
In this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECr) plasma on the reactive ion etching (rIE) properties of ruO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS. p]The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the rUO2 films appreciably. The etch rate of the ruO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of ruO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.
We succeeded in high resolution force measurements by using a noncontact ultrahigh vacuum-atomic force microscope (UHV-AFM) with frequency modulation (FM) detection. We clearly observed adatoms and corner holes on the...
We succeeded in high resolution force measurements by using a noncontact ultrahigh vacuum-atomic force microscope (UHV-AFM) with frequency modulation (FM) detection. We clearly observed adatoms and corner holes on the Si(111)7×7 reconstructed surface. Then we applied the noncontact UHV-AFM with FM detection to the high resolution measurement of the electrostatic force. We preventeddeterioration of the spatial resolution of the topography by isolating the electrostatic interaction from van der Waals interaction. By simultaneous measurements of the topography and electrostatic force on a silicon oxide, a spatial resolution ∼15 Å of the electrostatic force was achieved.
The next generation manufacturing systems will exploit new features from distributed computing, object-oriented software engineering, and Internetworking. In this respect, the role of agents for intelligent manufactur...
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The next generation manufacturing systems will exploit new features from distributed computing, object-oriented software engineering, and Internetworking. In this respect, the role of agents for intelligent manufacturing systems is addressed. This paper mainly surveys the state-of-the-art of the distributed object and agent technologies, which are the core of the intelligent manufacturing systems. Open architecture for interoperability is stressed. Standardization activities are also addressed.
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