检索结果-内蒙古大学图书馆

Arsenal ship program certification plan

NAVAL ENGINEErS JOUrNAL 1998年第1期110卷 249-261页

作者： Arntson, S Lind, W Turner, JJ Blaiklock, WC Tedesco, M Stephen G. Arntson is an independent consultant. A degree Naval Architect he has over 38 years of experience in the design construction and maintenance of surface ships. His experience includes 28 yeus with the Naval Sea Systems Command Naval Ship Engineering Centerl Bureau of Ships specializing in the structural design of Naval surface ships and 7 years with ABS Specializing in the application of commercial ship design practices. Most recently he worked with both NASSCO and ABS MZ the Arsenal Ship Program. Steve was very active with the Ships Structure Committee in developing R&D programs for ship structure and he is a member of the ASNE Journal Committee. Steve received a BS in Mechanical Engineering (Naval Architecture Option) from Virginia Polytechnic Institute in 1964. He is a member of the ASNE TAU BETA PI PI TAU SIGMA and PHI KAPPA PHI. William 1. Lind joined ABS in 1992 after ten years with Sparkman and Stephens Inc. He is currently ABS Amekas Manager of Engineering jm New Orleans and Cleveland. Both ofices conduct plan reviews for militavy commercial and private marine craft fm self-propelled vessels under 300 feet in length and bargus unlimited in length. As Vice-Chaimn ojthe Western Rivers Technical Committee Great Lakes Technical Committee and the Small Vessel Committee Bill participated in the writing of the 1997 ABS Guide for Building and Classing High Speed Craft and the 1997 ABS Rules for Building and Classing Steel Vessels Under 9OM. Bill received an MBA from Florida Atlantic University in 1995 a BS in Mechanical Engineering from New York Institute of Technology in 1986 and a BA in Histoy from Colgate University in 1976. He is Chaimn of SNAME HS-9 Composite Panel Testing & Fire Protection and a member of ASNE. John J. Turner is Senior Vice President of SYNTEK Technologies Inc. in Arlington Virginia. SYNTEK specializes in activities of a highly technical nature supporting both industry and government in domestic and international markets. He is a registered Professional Engineer

The defense advanced research Project Agency (dArPA), in conjunction with the U.S. Navy, initiated a research program for the design and construction of a distinctive warship for the 21st century known as the Arsenal Ship. By using an innovative development and acquisition approach it was hoped to streamline the procurement process and reduce costs. In an environment where budgets are being cut, both industry and Government were challenged to develop, design, and produce the innovative ship and related mission systems to meet specific performance capabilities within strict affordability constraints. A key element of this innovative acquisition approach was a new certification scheme designed to replace the traditional test and evaluation (T&E) and acceptance process. The purpose of this paper is to describe the development of the certification plan during Phase LI of the Arsenal Ship program by the American Bureau of Shipping and the contending Shipyard teams, and to discuss the potential benefits of this alternative certification approach. Although the Arsenal Ship program was canceled late in 1997, insight derived from the exploration of new certification concepts could benefit future design and building programs.

关键词： Warships

来源：评论

学校读者我要写书评

暂无评论

Low-power CMOS on-chip voltage reference using MOS PTAT: an EP approach

Low-power CMOS on-chip voltage reference using MOS PTAT: an ...

引用

Annual IEEE International Conference and Exhibit ASIC

作者： Yoon-deuk Seo dongkyung Nam Byoung-Jin Yoon Il-Hyun Choi Beomsup Kim Department of Electrical Engineering Korea Advanced Institute of Science and Technology Taejon South Korea Semiconductor R&D Laboratory 1 Hyundai Electronics Industries Company Limited Ichon Gyeonggi South Korea

ISBN: (纸本)0780342836

This paper presents a new low-power on-chip voltage reference less sensitive to the process variation in an 0.5 /spl mu/m drAM process where neither reliable BJT nor depletion MOS are available. The proposed voltage reference uses the MOS threshold voltage and a PTAT (proportional to the absolute temperature) voltage generated only from MOS transistors, and achieves considerably good performance at the total current of less than 8 /spl mu/A with an external power supply voltage ranging from 2.8 to 4 V. The measured temperature coefficient is about 360 ppm//spl deg/C at temperatures ranging from 0/spl deg/C to 100/spl deg/C. In addition, an optimization technique is proposed to find a set of optimal parameters in designing circuits.

关键词： Threshold voltage Temperature distribution Temperature measurement CMOS process random access memory Temperature sensors Power generation MOSFETs Power supplies Current measurement

来源：评论

学校读者我要写书评

暂无评论

Low-frequency noise characteristics of self-aligned AlGaAs/GaAs HBTs with a noise corner frequency below 3 kHz

Low-frequency noise characteristics of self-aligned AlGaAs/G...

引用

Microwave, MTT-S International Symposium

作者： Jin-Ho Shin Jiyoung Kim Yujin Chung Joonwoo Lee Kyu Hwan Ahn Bumman Kim Department of E.E.E. and Microwave Application Research Center POSTECH South Korea Advanced Devices Group Devices and Materials Laboratory LG Corporate Institute of Technology Seoul South Korea Photonics Device Laboratory System IC R&D Laboratory Hyundai Electronics Industries Company Limited Icheon Gyeonggi South Korea

ISBN: (纸本)0780338146

We have investigated the surface recombination and its 1/f noise properties of AlGaAs/GaAs HBT's as a function of the emitter-base structure and the surface passivation condition. It is found that the surface recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% Al mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm/sup 2/. The dominant noise source of the HBT is not a surface recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor devices, and comparable to those of low-noise Si BJTs.

关键词： Low-frequency noise Gallium arsenide Semiconductor device noise radiative recombination Passivation Frequency Noise reduction Current density Heterojunction bipolar transistors III-V semiconductor materials

来源：评论

学校读者我要写书评

暂无评论

Efficient and stable operation of a high-brightness cw 500-W Nd:YAG rod laser

引用

APPLIEd OPTICS 1996年第15期35卷 2566-2569页

作者： Yasui, K The author is with the Laser & Optics Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi Amagasaki Hyogo 661 Japan.

Enhanced efficiency and stabilized beam-power generation were proved for a high-brightness Mw-based 500-W Nd:YAG rod laser by compensation of the thermally induced bifocusing of the Nd:YAG rod. Maximum laser power of 500 W cw was obtained at lamp input power of 18.4 kW, with beam quality M(2) = 19 Or omega theta (radius x, the half-angle of divergence) = 6.4 mm mrad and power fluctuation of less than 1%. (C) 1996 Optical Society of America

关键词： solid-state lasers high-brightness beams beam quality bifocusing compensation

来源：评论

学校读者我要写书评

暂无评论

High-brightness cw-500-W Nd: YAG rod laser

High-brightness cw-500-W Nd: YAG rod laser

引用

advanced Solid State Lasers, ASSL 1996

作者： Yasui, Koji Laser & Optics Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi Amagasaki661 Japan

ISBN: (纸本)1557523703

关键词： Yttrium aluminum garnet

来源：评论

学校读者我要写书评

暂无评论

advanced resonator technology for high brightness lasers

Advanced resonator technology for high brightness lasers

引用

IEEE Photonics Conference (IPC)

作者： K. Yasui Laser & Optics Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Limited Amagasaki Hyogo Japan

High-power lasers with laser power over 100-W are becoming essential tools in manufacturing. For this application field, high brightness lasers are demanded for high-quality materials processing. In this paper, the mechanism has been analyzed for a Nd:YAG rod laser related to the thermal lensing variation in the rod and a solution is proposed.

关键词： Brightness Power lasers Neodymium Laser beams Polarization Pump lasers Solid lasers Laser noise Thermal lensing Fiber lasers

来源：评论

学校读者我要写书评

暂无评论

Estimation of breakdown voltages of surface flashovers initiated from triple junction in SF6 gas

引用

ELECTrICAL ENGINEErING IN JAPAN 1996年第5期116卷 1-17页

作者： Hama, H Inami, K Yoshimura, M Nakanishi, K Mitsubishi Electric Corporation Received B.S. and M.S. degrees from Osaka University in 1979 and 1981 respectively. He joined Mitsubishi Electric Corporation in 1981. He has been engaged in the development of gas-insulated switchgears at Itami Works. He is a member of IEEE. Received his B.S. degree from Akita University in 1981. He joined Mitsubishi Electric Corporation in 1981. He has bene engaged in research and development of gas insulation for GIS at Itami Works. Received his B.S. degree from Hiroshima University in 1992. He joined Mitsubishi Electric Corporation in 1992. He has been engaged in research on gas insulation at Central Research Laboratory. Received his B.S. M.S. and Ph.D. degrees from Osaka University in 19711973 and 1983 respectively. He joined Mitsubishi Electric Corporation in 1973. He has been engaged in the studies of SF6gas insulation and the development of gas-insulated switchgears at Central Research Laboratory. He was a Visiting Scientist at Oak Ridge National Laboratory Tennessee in 1983–1984. He is now the manager of Electromagnetic Systems Department Advanced Technology R&D Center Mitsubishi Electric Corp. Dr. Nakanishi is senior member of IEEE.

In this paper, a method is proposed to estimate the minimum breakdown voltages of surface flashovers initiated from the triple junction at which a solid insulator, SF6 gas, and a metal electrode come in contact. Using four kinds of test samples, the flashover voltages V-f are measured. The voltages V-f become lower than the theoretical voltages V-s of streamer inception in the case of the test sample with the large electrode area at the triple junction. To understand the phenomena quantitatively, we estimated the real partial discharge voltages V-c from the voltages V-f, and investigated the relationship between the voltages V-c and the theoretical values V-s. The values of V-s/V-c, which characterize the properties of the partial discharges, can be shown by the product lambda S(90%)E(av)P of the following parameters: (1) coefficient lambda representing the surface roughness of electrode at the triple junction;(2) effective area S-90% of the electrode;(3) average field E(av) at the area S-90%;and (4) gas pressure p. The minimum surface flashover voltages in the insulators for coaxial electrode systems can be estimated precisely, considering the properties of V-s/V-c.

关键词： insulation SF6 surface flashover breakdown voltage insulator-gas-electrode junction

来源：评论

学校读者我要写书评

暂无评论

Hole transport in polysilanes with diverse side-chain substituents

引用

Philosophical Magazine B 1995年第6期71卷 1069-1081页

作者： T. dohmaru K. Oka T. Yajima M. Miyamoto Y. Nakayama T. Kawamura r. West Research Institute for Advanced Science and Technology University of Osaka Prefecture 1-2 Gakuencho Sakai Osaka 593 Japan College of Engineering University of Osaka Prefecture 1-1 Gakuencho Sakai Osaka 593 Japan Canon Inc. Ecology R&D Center Kizucho Sourakugun Kyoto 619-02 Japan College of Engineering University of Osaka Prefecture 1-1 Gakuencho Sakai Osaka 593 Japan Department of Chemistry University of Wisconsin Madison WI 53706 USA

The hole drift mobilities in polysilanes with diverse substituents and different molecular weights have been measured by the conventional time-of-flight technique. depending on the kind of substituents, hole drift mobilities varied by more than one order of magnitude; poly(?henyltrimethyldisilane) gave the highest room temperature hole drift mobility, 6·0 × 10−4cm2V−1s−1at a field of 2 × 105V cm−1, of all the polysilanes reported so *** electric field and temperature dependences of the hole drift mobilities in polysilanes were analysed in the framework of Gill's expression and Bässler's consideration. Polysilanes with an aromatic side group exhibited a zero-field activation energyE0ofca.0·35 eV compared toE0= 0·22-0·26 eV obtained for polysilanes with non-aromatic groups, while poly(phenyltrimethyldisilane), with one aromatic side group at every two Si atoms, manifestedE0= 0·26 eV, a value which may be categorized in the latter group with non-aromatic substituents. The effects of the substituents on drift mobility are further discussed in terms of the disorder in the energy and position of the hopping sites in the particular polysilanes.

关键词：

来源：评论

学校读者我要写书评

暂无评论

ZCS-ZVS mixed mode PWM resonant converter for snubber energy recovery of 3-level GTO inverter

ZCS-ZVS mixed mode PWM resonant converter for snubber energy...

引用

Annual IEEE Conference on Power Electronics Specialists (PESC)

作者： H.H. Seong d.J. Kim G.H. Cho Buchun R&D Center Samsung Electronics Company Limited Germany Department of Electrical Engineering Korea Advanced Institute of Science and Technology South Korea

In this paper, a new type of PWM series resonant converter is proposed. One pole of the proposed converter is switching at zero-current and the other is switching at zero-voltage. By introducing an auxiliary inductor, zero-voltage switching is possible even at no load. The proposed converter is suitable for a high-voltage dC/dC converter because the voltage stresses of switching devices are minimized.< >

关键词： Pulse width modulation Pulse width modulation converters resonance Snubbers Switching converters Inductors Zero voltage switching dC-dC power converters Stress

来源：评论

学校读者我要写书评

暂无评论

THEOrETICAL ANd EXPErIMENTAL STUdIES OF ELECTrIC-FIELd-INdUCEd rEFrACTIVE-INdEX CHANGE IN QUANTUM-FILM, QUANTUM-WIrE, ANd QUANTUM-BOX STrUCTUrES

引用

MICrOWAVE ANd OPTICAL technology LETTErS 1994年第3期7卷 89-94页

作者： rAVIKUMAr, KG AIZAWA, T SHIMOMUrA, K KIKUGAWA, T ASAdA, M ArAI, S SUEMATSU, Y YAMAUCHI, r Optical Device Section Advanced Technology R&D Center Fujikura Ltd. 1440 Mutsuzaki Sakura Chiba 285 Japan Department of Electrical Engineering Sophia University Japan Anritsu Corp. Japan Tokyo Institute of Technology Japan

In this article we report theoretical as well as experimental studies of the electric-field-induced refractive index change in InGaAs/InP quantum-well structures, viz., quantum-film, quantum-wire, and quantum-box structures. The refractive index change, easily measured using a Mach-Zehnder interferometer setup, was around 1%, 4%, and 7% in quantum film, quantum wire, and quantum box, respectively, in the longer-wavelength region corresponding to the positive refractive index change peak. Moreover, we will discuss that the refractive index change dependency on the polarization of incident light in a quantum film can be controlled by introducing suitable tensile strain in it. It was found that for a well width of II nm, 0.3% tensile strain should be induced to obtain polarization-independent refractive index change. (C) 1994 John Wiley and Sons, Inc.

关键词： QUANTUM FILM QUANTUM WIrE QUANTUM BOX rEFrACTIVE INdEX CHANGE ELECTrIC FIELd

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：