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Cover Picture: development of aT1Contrast Agent for Magnetic resonance Imaging Using MnO Nanoparticles (Angew. Chem. Int. Ed. 28/2007)

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Angewandte Chemie International Edition 2007年第28期46卷

作者： Hyon Bin Na Jung Hee Lee Prof. Kwangjin An Yong Il Park Mihyun Park In Su Lee Prof. do-Hyun Nam Prof. Sung Tae Kim Prof. Seung-Hoon Kim Prof. Sang-Wook Kim Prof. Keun-Ho Lim Ki-Soo Kim Prof. Sun-Ok Kim dr. Taeghwan Hyeon Prof. National Creative Research Initiative Center for Oxide Nanocrystalline Materials and School of Chemical and Biological Engineering Seoul National University Seoul 151-744 Korea Fax: (+82) 2-886-8457 Department of Radiology Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135-710 Korea Fax: (+82) 2-3410-0084 Department of Chemistry and Advanced Material Science Kyunghee University Yongin 446-701 Korea Department of Neurosurgery Samsung Medical Center Sungkyunkwan University School of Medicine Seoul 135-710 Korea Department of Molecular Science and Technology Ajou University Suwon 443-749 Korea NMR Laboratory Asan Institutes for Life Science University of Ulsan Seoul 138-736 Korea Department of Pediatrics Asan Medical Center University of Ulsan Seoul 138-736 Korea Biology and Clinical Pharmacology Samyang R&D Center Daejeon 305-717 Korea

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Body effects in tri-gate bulk FinFETs for dTMOS

Body effects in tri-gate bulk FinFETs for DTMOS

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IEEE Nanotechnology Materials and devices Conference (NMdC)

作者： Jin-Woo Han Choong-Ho Lee donggun Park Yang-Kyu Choi Department of Electrical Engineering & Computer Science Korea Advanced Institute of Science and Technology Daejeon South Korea Semiconductor R&D center Samsung Electronics Company Limited Yongin si South Korea

Body factor was investigated in tri-gate bulk FinFET for the first time. Increment of on-state current and decrement of off-state current are achieved by body bias modulation. Electrical measurements were carried out to investigate the body effects in view points of a fin width that governs short-channel effects. A wide fin width was preferable for a dynamic threshold voltage operation and wide range of the threshold adjustment, however, the fin width is limited for suppression of short-channel effects. This work can provide feasibility of dTMOS application of FinFETs for low-power and high-performance application

关键词： FinFETs Threshold voltage MOSFET circuits degradation diodes Computer science research and development Electric variables measurement Silicon Fabrication

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160×120 Uncooled IrFPA for Small Jr Camera

160×120 Uncooled IRFPA for Small JR Camera

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IEEE SENSOrS

作者： Toshiki Seto Keisuke Kama Masafumi Kimata Munehisa Takeda Hisatoshi Hata Yoshiyuki Nakaki Hiromoto Inoue Yasuhiro Kosasayama Yasuaki Ohta Hiroshi Fukumoto Kamakura Works Mitsubishi Electric Corporation Limited Kamakura Kanagawa Japan Department of Micro System Technology Ritsumeikan University Kusatsu Shiga Japan Advanced Technology R&D Center Mitsubishi Electric Corporation Limited Hyogo Japan

We have developed a 160 times 120 SOI (silicon on insulator) diode uncooled IrFPA (Infrared Focal Plane Array) with 25 mum pixel pitch for a small Ir camera. The IrFPA has a highly responsive pixel structure and is packaged in a chip scale vacuum package (CSVP) in order to reduce the package size. The size of the package is 14.5(L) times 13.5(W) times 1.2(H) mm. An infrared image of less than 60 mK in NETd (Noise Equivalent Temperature difference) with f/1.0 optics has been obtained by the developed IrFPA.

关键词： Cameras diodes Leg Temperature sensors Chip scale packaging Silicon on insulator technology Electromagnetic wave absorption Wafer scale integration Sensor arrays Infrared sensors

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degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion

Degradation of metamorphic InGaAs Esaki tunnel diodes due to...

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Indium Phosphide and related Materials Conference

作者： H. Ono M. Yanagita S. Taniguchi T. Suzuki Advanced Devices R&D Department Semiconductor Solutions Network Company Sony Corporation Atsugi Kanagawa Japan Center for Nano Materials and Technology Japan Advanced Institute of Science and Technology Ishikawa Japan

We have investigated degradation of metamorphic In 0.53 Ga 0.47 As Esaki tunnel diodes. The degradation due to electrode diffusion and impurity interdiffusion is more prominent than that of lattice-matched In 0.53 Ga ... 详细信息

关键词： degradation Indium gallium arsenide Electrodes Impurities Semiconductor diodes Light emitting diodes Gallium arsenide Lattices Substrates Gold

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Energetics of Various Electrically deactivating defects in Heavily n‐type Si

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AIP Conference Proceedings 2005年第1期772卷 95-96页

作者： Chang‐Youn Moon Yong‐Sung Kim Kee Joo Chang *Department of Physics Korea Advanced Institute of Science and Technology Daejon 305‐701 Korea ¶Semiconductor R&D Center Samsung Electronics Company Ltd. Gyunggido Korea

Based on first‐principles pseudopotential calculations, we study the energetics of various donor‐pair defects which have been proposed as electrically deactivating donors in highly n‐type Si. We find that a class of nearest‐neighbor donor pairs such as d1 and dP(1) is energetically most favorable. Among donor‐pair‐vacancy‐interstitial complexes, the dP(2)V‐I defect forms a metastable configuration, with very low energy barriers of 0.03–0.06 eV for transforming into d2, which behaves as an electrically active donor. Thus, the formation of dP(2)V‐I is more probable for samples grown at low temperatures, in good agreement with recent experiments. On the other hand, the dP(4)V‐I defect is unstable against the formation of d4, with no energy barriers.

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Optimal time-frequency block size and mode-switching level for adaptive OFdM system

Optimal time-frequency block size and mode-switching level f...

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IEEE Conference on Vehicular technology (VTC)

作者： Kil-Ho Shin Hyung-Myung Kim Wibro Technology Lab Telecommunication R&D Center Samsung Electronics Company Limited Suwon South Korea Department of EECS Korea Advanced Institute of Science and Technology Daejeon South Korea

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Automatic generation of software/hardware co-emulation interface for transaction-level communication

Automatic generation of software/hardware co-emulation inter...

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International Symposium on VLSI design, Automation and Test

作者： Young-Il Kim Ki-Yong Aim Heejun Shim Wooseung Yang Young-Su Kwon Ando Ki Chong-Min Kyung Department of EECS Korea Advanced Institute of Science and Technology Daejeon Korea Research & Development Center Dynalith Systems Company Limited Daejeon South Korea Dynalith Systems R&D Center Daejeon Korea Department of EECS Korea Advanced Institute of Science and Technology Daejeon South Korea

ISBN: (纸本)0780390601

This paper presents a methodology for generating interface of a co-emulation system where processor and emulator execute testbench and design unit, respectively while interacting with each other. To reduce the communication time between the processor and emulator, data transfers are performed in transaction level instead of signal level. To do this, transactor should be located near the dUT mapped on the hardware emulator. Consequently transactor is described in a synthesizable way. Moreover, the transactor design depends on both emulator system protocol and dUT protocol. Therefore, transactor description would not only be time-consuming but also error-prone task. Based on the layered architecture, we propose an automated procedure for generating co-emulation interface from platform-independent transactor. We have also discussed about the practical issues on multiple channel and clock skew problem.

关键词： Hardware Protocols Computer architecture Software systems Engines System testing Clocks Software testing Emulation decoding

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A Study on High Frequency Sustaining driver for Improving Luminance Efficiency of AC-PdP

A Study on High Frequency Sustaining Driver for Improving Lu...

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Annual IEEE Conference on Power Electronics Specialists (PESC)

作者： S.W. Choi S.K. Han G.W. Moon H.C. Yang Y.H. Cho Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology Daejeon South Korea Corporate R&D Center Samsung SDI Company Limited Yongin si Gyeonggi South Korea

Plasma display panel (PdP) has a serious thermal problem, because the luminance efficiency of the conventional PdP is about 1.5 lm/W and it is less than 3-5 lm/W of cathode ray tube (CrT). Thus there is a need for improving the luminance efficiency of the PdP. There are several approaches to improve the luminance efficiency of the PdP and we adopt the driving PdP at high frequency range from 400 kHz up to over 700 kHz. Since a PdP is regarded as an equivalent inherent capacitance, many types of sustaining drivers have been proposed and widely used to recover the energy stored in the PdP. However, these circuits have some drawbacks for driving PdP at high frequency range. In this paper, we investigate the effect of the parasitic components of PdP itself and driver when the reactive energy of panel is recovered. Various drivers are classified and evaluated whether it is suitable for high frequency driver, and finally current-fed type with dC input voltage biased is proposed. This driver overcomes the effect of parasitic component in panel and driver and fully achieves ZVS of all full-bridge switches and reduces the transition time of the panel polarity. It is tested to validate the high frequency sustaining driver and the experimental results are presented

关键词： Frequency driver circuits Cathode ray tubes dielectric losses Plasma displays Phosphors Electromagnetic interference Electromagnetic wave absorption Switches Flat panel displays

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Scalable temporal interest points for abstraction and classification of video events

Scalable temporal interest points for abstraction and classi...

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IEEE International Conference on Multimedia and Expo (ICME)

作者： Seung-Hoon Han ln-So Kweon Digital Media R&D Center Samsung Electronics Company Limited South Korea Robotics and Computer Vision Laboratory Division of Electrical Engineering Department of EECS Korea Advanced Institute of Science and Technology South Korea

The image sequence of a static scene includes similar or redundant information over time. Hence, motion-discontinuous instants can efficiently characterize a video shot or event. However, such instants (key frames) are differently identified according to the change of velocity and acceleration of motion, and such scales of change might be different on each sequence of the same event. In this paper, we present a scalable video abstraction in which the key frames are obtained by the maximum curvature of camera motion at each temporal scale. The scalability means dealing with the velocity and acceleration change of motion. In the temporal neighborhood determined by the scale, the scene features (motion, color, and edge) can be used to index and classify the video events. Therefore, those key frames provide temporal interest points (TIPs) for the abstraction and classification of video events.

关键词： Layout Acceleration Cameras Humans research and development robot vision systems Computer vision Laboratories Image sequences Scalability

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Texture Etching of Multicrystalline Si by Atomic Hydrogen Generated by Hot Wire Method

Texture Etching of Multicrystalline Si by Atomic Hydrogen Ge...

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第十五届国际光伏科学与工程大会

作者： Takehiko Sato Michio Ohtsubo Shigeru Matsuno Makoto Konagai Material & Processing Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1-57 Miyashimo Sagamihara-City Kanagawa 229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology 2-12-1-S9-9 O-okayama Meguro-ku Tokyo 152-8552 Japan Material & Processing Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation 1-1-57 Miyashimo Sagamihara-City Kanagawa 229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology 2-12-1-S9-9 O-okayama Meguro-ku Tokyo 152-8552 Japan

Atomic hydrogen generated by the hotwire method is employed to form textured surface on the multicrystalline Si wafers. Formation of textured surface by the hotwire method is dependent on the orientation of the grains as experienced in the alkali etching process. Some regions in the multicrystalline Si wafers showed similar texturing features as that of single crystalline Si wafers while some other regions did not result in texturing. Alkali etched Si wafers are etched by the hotwire generated atomic hydrogen. This combined effect is useful in obtaining a better textured surface compared to that of only alkali etching or hotwire etching process.

关键词： Textunzation Etching Multicrystalline Silicon

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