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IEEE International Symposium on Semiconductor Manufacturing

作者： J.S. Tsai Y.N. Su r.Y. Huang J.M. Chiou J.H. Shieh H.Y. Chu J.J. Lee C.Y. Ting S.M. Jang M.S. Liang Advanced Module Technology Division R&D Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan Yield Enhancement Service Department Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan Process Failure Analysis Department Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

STEM-EdS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVd SiOC type low-k dielectric (k /spl ap/ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewall surface by plasma strip using N/sub 2//H/sub 2/, H/sub 2/, and O/sub 2/ chemistries in different ashers. The strip using N/sub 2//H/sub 2/ has minimum damage of low-k material because it forms a nitridation layer protecting ULK from subsequent damage whereas rIE mitigates the damage because of the nature of less chemical reaction.

关键词： Strips Hydrogen dielectric constant dielectric measurements Plasma measurements dielectric materials Plasma applications Plasma chemistry Manufacturing processes Semiconductor device manufacture

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Fabrication of 3d trench PZT capacitors for 256Mbit FrAM device application

Fabrication of 3D trench PZT capacitors for 256Mbit FRAM dev...

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International Electron devices Meeting (IEdM)

作者： June-Mo Koo Bum-Seok Seo Sukpil Kim Sangmin Shin Jung-Hyun Lee Hionsuck Baik Jang-Ho Lee Jun Ho Lee Byoung-Jae Bae Ji-Eun Lim dong-Chul Yoo Soon-Oh Park Hee-Suk Kim Hee Han Sunggi Baik Jae-Young Choi Yong Jun Park Youngsoo Park Nano Devices Laboratory Samsung Advanced Institute of Technology Yongin si South Korea Nano Fabrication Center Samsung Advanced Institute of Technology Yongin si South Korea AE Center Samsung Advanced Institute of Technology Yongin si South Korea Process Development Team Semiconductor R&D Division Samsung Electronics Company Limited Yongin si South Korea Department of Materials Science and Engineering Pohang University of Science and Technology Pohang South Korea Pohang Accelerator Laboratory Pohang University of Science and Technology Pohang South Korea

ISBN: (纸本)078039268x

We fabricated trench PbZr x Ti 1-x O 3 (PZT) capacitors that can be used in 256Mbit 1T-1C FrAM devices. The capacitor has 0.25mum diameter and 0.4mum depth. Three layers, Ir(20nm)/PZT(60nm)/Ir(20nm), were deposited in SiO 2 trench holes by ALd and MOCVd. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative portion had strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under 2.1V external bias and 19 to 24 muC/cm 2 remnant polarization

关键词： Fabrication Capacitors random access memory Ferroelectric films Nonvolatile memory Polarization Materials science and technology Laboratories MOCVd Ferroelectric materials

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Characterization of a-SiCN:H Passivation Layer deposited by Hot Wire Chemical Vapor deposition using Hexamethyldisilazane

Characterization of a-SiCN:H Passivation Layer Deposited by ...

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第十五届国际光伏科学与工程大会

作者： Michio Otsubo Takehiko Sato Shinsuke Miyajima Amornrat Limmanee Tatsuro Watahiki Akira Yamada Makoto Konagai Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Material & Process Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Kanagawa 229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan

As a novel passivation film for silicon solar cells, hydrogenated amorphous silicon carbon nitride films were prepared by hot wire chemical vapor deposition using hexamethyldisilazane (HMdS). HMdS has significant advantages which are non-explosive and low price. X-ray photoelectron spectroscopy measurement showed that the chemical composition ratio of Si, C and N are 4.5, 4.0 and 1 respectively. Spectroscopic ellipsometry measurement revealed that refractive index of the deposited film is 2.4～3.0 and the optical band gap is 3.0 eV. The passivation effect of a-SiCN:H films were indicated by the increase of the effective lifetime of the Si wafer.

关键词： a-SiCN:H Hot wire chemical vapor deposition Hexamethyldisilazane Antireflection Passivation

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Capacitance-Voltage Study of a-SiCN:H/Si Interfaces Fabricated by Hotwire Chemical Vapor deposition Using Hexamethyldisilazane

Capacitance-Voltage Study of a-SiCN:H/Si Interfaces Fabricat...

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第十五届国际光伏科学与工程大会

作者： Amornrat Limmanee Michio Otsubo Takehiko Sato Shinsuke Miyajima Tatsuro Watahiki Adash Sandhu Akira Yamada Makoto Konaga Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Material & Process Technology Department Advanced Technology R&D Center Mitsubishi Electric Corporation Kanagawa229-1195 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Quantum Nanoelectronics Research Center Tokyo Institute of Technology Tokyo 152-8552 Japan Department of Physical Electronics Tokyo Institute of Technology Tokyo 152-8552 Japan

In our previous work, we have found that hydrogenerated amorphous silicon carbon nitride films (a-SiCN:H) deposited by hotwire chemical vapor deposition (HWCVd) using hexamethyldisiIazane (HMdS) can be applied as an antireflection coating and passivation layer for crystalline and polycrystalline silicon solar cells. Since interface properties are of most concern in photovoltaic applications, in this study we investigated a-SiCN:H/Si interfaces via capacitance-voltage measurements to find optimum conditions (deposition and post-deposition anneal conditions). Our analysis was focusing on the dependence of the changes in interface trap density, fixed charge density and lifetime on the anneal conditions. Experimental results indicated that post-deposition annealing increased positive charge in the films and annealing at high temperature reduced effects due to surface states. The post deposition annealing at 600℃seemed to be effective in increasing life-time while that at 400℃had reverse effect. Thus we found that post-deposition anneal has a very significant effect on a-SiCN:H/Si interface and optimum anneal temperature and time improves the interface properties of a-SiCN:H films.

关键词： Hotwire chemical vapor deposition a-SiCN:H C-V measurement lifetime

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Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states

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Physical review B 2005年第23期72卷 233202-233202页

作者： K. Ishizaka T. Kiss T. Shimojima T. Yokoya T. Togashi S. Watanabe C. Q. Zhang C. T. Chen Y. Onose Y. Tokura S. Shin Institute for Solid State Physics University of Tokyo Kashiwa Chiba 277-8581 Japan The Institute of Physical and Chemical Research (RIKEN) Wako Saitama 351-0198 Japan The Graduate School of Natural Science and Technology Okayama University Okayama 700-8530 Japan The Institute of Physical and Chemical Research (RIKEN) Sayo-gun Hyogo 679-5143 Japan Beijing Center for Crystal R&D Chinese Academy of Science Zhongguancun Beijing 100080 China Spin Superstructure Project ERATO Japan Science and Technology Agency (JST) Tsukuba 305-8562 Japan Department of Applied Physics University of Tokyo Tokyo 113-8656 Japan Correlated Electron Research Center (CERC) National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305-8562 Japan

The temperature (T) dependent gap formation in the density of states (dOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (∼60meV) at the Fermi level is observed in the dOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.

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Nuclear data Evaluations for JENdL High‐Energy File

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AIP Conference Proceedings 2005年第1期769卷 326-331页

作者： Y. Watanabe T. Fukahori K. Kosako N. Shigyo T. Murata N. Yamano T. Hino K. Maki H. Nakashima N. Odano S. Chiba *Department of Advanced Energy Engineering Science Kyushu University Kasuga Fukuoka 816‐8580 Japan †Japan Atomic Energy Research Institute Tokai‐mura Naka‐gun Ibaraki 319‐1195 Japan **Institute of Technology Shimizu Corporation Koto‐ku Tokyo 135‐8530 Japan ‡Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Fukuoka 812‐8581 Japan §AITEL Corporation Kawasaki‐ku Kawasaki 210‐0862 Japan ¶Research Laboratory for Nuclear Reactors Tokyo Institute Technology Meguro‐ku Tokyo 152‐8550 Japan ‖Power & Industrial Systems R&D Laboratory Hitachi Ltd. Hitachi Ibaraki 319‐1221 Japan ††Comprehensive Research Organization for Science and Society Tsuchiura Ibaraki 300‐0810 Japan ‡‡National Maritime Research Institute Mitaka Tokyo 181‐0004 Japan

An overview is presented of recent nuclear data evaluations performed for the JENdL high‐energy (JENdL‐HE) file, in which neutron and proton cross sections for energies up to 3 GeV are included for the whole 132 nuclides. The current version of the JENdL‐HE file consists of neutron total cross sections, nucleon elastic scattering cross sections and angular distributions, nonelastic cross sections, production cross sections and double‐differential cross sections of secondary light particles (n, p, d, t, 3He, α, and π) and gamma‐rays, isotope production cross sections, and fission cross sections in the ENdF6 format. The present evaluations are performed on the basis of experimental data and theoretical model calculations. For the cross section calculations, we have constructed a hybrid calculation code system with some available nuclear model codes and systematics‐based codes, such as ECIS96, OPTMAN, GNASH, JQMd, JAM, TOTELA, FISCAL, and so on. The evaluated cross sections are compared with available experimental data and the other evaluations. Future plans of our JENdL‐HE project are discussed along with prospective needs for high‐energy cross section data.

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On-chip network based embedded core testing

On-chip network based embedded core testing

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IEEE International SOC Conference

作者： Jong-Sun Kim Min-Su Hwang Seungsu roh Ja-Young Lee Kangmin Lee Se-Joong Lee Hoi-Jun Yoo Department of R&D System Integration and Intellectual Property Authoring Center Department of EECS Korea Advanced Institute of Science and Technology Daejeon South Korea

ISBN: (纸本)0780384458

In this paper, network-based embedded core testing (NET) architecture is proposed. The test of individual embedded cores and their interconnection are possible in a system-on-chip (SoC) environment by using configurable on-chip network (OCN) architecture. And the test time can be reduced because the proposed test access mechanism provides high bandwidth for test patterns transport. In addition, since the core access path during test shares with the communication architecture of the SoC, the area overhead can be reduced. A network-on-chip (NoC) application with the proposed NET architecture is implemented. The operation and the performance of NET architecture are described.

关键词： Network-on-a-chip System testing Clocks Bandwidth routing Packet switching System-on-a-chip Scalability Frequency synchronization Switches

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A seamless handoff scheme for UMTS-WLAN interworking

A seamless handoff scheme for UMTS-WLAN interworking

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IEEE Conference and Exhibition on Global Telecommunications (GLOBECOM)

作者： Hyun-Ho Choi O. Song dong-Ho Cho Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology South Korea Telecommunication R&D Center Samsung Electronics Company Limited South Korea

In this paper, we present a practical UMTS-WLAN interworking architecture based on 3GPP standards, and propose a seamless handoff scheme that guarantees low delay and low packet loss during UMTS-WLAN handoff. For low handoff delay, the proposed handoff scheme performs pre-registration and pre-authentication processes before the layer 2 handoff. Moreover, it uses packet buffering and forwarding functions in order to reduce packet loss during the handoff period. Numerical and simulation results show that the proposed scheme performs well with respect to signaling cost, handoff delay, and packet loss compared with conventional schemes.

关键词： delay Wireless LAN Mobile radio mobility management Protocols 3G mobile communication IP networks Authentication research and development Electronic mail Computer architecture

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Modeling and control of thermal microsystems 7th

Modeling and control of thermal microsystems

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7th International Symposium on advanced Control of Chemical Processes, AdCHEM 2003

作者： Lee, Yong Joon Sung, Su Whan Yoon, dae Sung Lim, Geunbae Park, Sunwon Department of Chemical and Biomolecular Engineering Center for Ultramicrochemical Process Systems Korea Advanced Institute of Science and Technology 373-1 Gusung-dong Yusung-gu Daejon305-701 Korea Republic of Corporate R&D LG Chem. Ltd. Research Park 104-1. Moonji-dong Yusung-gu Daejon305-380 Korea Republic of Biochip Project Team and MEMS Lab Samsung Advanced Institute of Technology San 14 Nongseo-Ri Kiheung-Eup Yongin-City Kyunggi-Do449-712 Korea Republic of

A thermal microsystem is developed which consists of a microreactor integrated with a platinum sensor/heater, and automation equipment/software such as data acquisition system, control program and graphic user interface. From the control point of view, we analyze the dynamic characteristics of the fabricated microreactor and find some interesting dynamic features. On the basis of the analysis, we suggest an appropriate model structure and estimate the model parameters using the prediction error identification method. requirements for a high-performance operation are discussed and a nonlinear control strategy is proposed to linearize the nonlinear dynamics of the thermal microsystem. We determine the parameters of the nonlinear controller using the optimal tuning method. The developed thermal microsystem shows much better control performances compared to commercial polymerase chain reaction (PCr) thermal cyclers. We successfully demonstrate the PCr of plasmid dNA using the thermal microsystem. Copyright © IFAC 2003

关键词： Polymerase chain reaction

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Modeling and Control of Thermal Microsystems

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IFAC Proceedings Volumes 2004年第1期37卷 105-111页

作者： Yong Joon Lee Su Whan Sung dae Sung Yoon Geunbae Lim Sunwon Park Department of Chemical & Biomolecular Engineering and Center for Ultramicrochemical Process Systems Korea Advanced institute of Science and Technology 373-1 Gusung-dong Yusung-gu Daejon 305-701 KOREA Corporate R&D LG Chem. Ltd. Research Park 104-1 Moonji-dong Yusung-gu Daejon 305-380 KOREA Biochip Project Team and MEMS Lab. Samsung Advanced Institute of Technology San 14 Nongseo-Ri Kiheung-Eup Yongin-City Kyunggi-Do. 449-712. KOREA

A thermal microsystem is developed which consists of a microreactor integrated with a platinum sensor/heater, and automation equipment/software such as data acquisition system, control program and graphic user interface. From the control point of view, we analyze the dynamic characteristics of the fabricated microreactor and find some interesting dynamic features. On the basis of the analysis, we suggest an appropriate model structure and estimate the model parameters using the prediction error identification method. requirements for a high-performance operation are discussed and a nonlinear control strategy is proposed to Iinearize the non linear dynamics of the thermal microsystem. We determine the parameters of the non linear controller using the optimal tuning method. The developed thermal microsystem shows much better control performances compared to commercial polymerase chain reaction (PCr) thermal cyclers. We successfully demonstrate the PCr of plasmid dNA using the thermal microsystem.

关键词： Thermal Microsystems System Identification Nonlinear Control PId Controller Polymerase Chain reaction

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