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2024 Frontiers in Optics, FiO 2024

作者： Klein, C. Jenkins, N. Shao, Y. Li, Y. Park, S. Kim, W. Kapteyn, H. Murnane, M. Department of Physics JILA STROBE NSF Science & Technology Center University of Colorado NIST BoulderCO United States Core Technology R&D Team Mechatronics Research Samsung Electronics Co. Ltd. Hwasung Korea Republic of Advanced Process Development Team 4 Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwasung Korea Republic of Kapteyn-Murnane Laboratories Inc. 4775 Walnut Street #102 BoulderCO80301 United States

We characterize nanoscale out-of-plane features on an industrially relevant semiconductor sample using a coherent extreme ultraviolet high harmonic generation source at 29nm. The advantages of using 13.5nm light are a... 详细信息

关键词： Extreme ultraviolet lithography

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The staggered-layer induced elasticity strengthening mechanism in flexible Bi2Te3

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Matter 2025年

作者： Huang, Xiege Wu, Luoqi Hu, Mingyuan Feng, Xiaobin Zhai, Pengcheng Li, Wenjuan Duan, Bo He, Jiaqing Li, Guodong Zhang, Qingjie Goddard, William A. Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics School of Physics and Mechanics Wuhan University of Technology Wuhan430070 China Guangdong Provincial Key Laboratory of Advanced Thermoelectric Materials and Device Physics Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics Southern University of Science and Technology Shenzhen518055 China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan430070 China Materials and Process Simulation Center California Institute of Technology PasadenaCA91125 United States

Wearable flexible devices require the development of thermoelectric (TE) materials with high strength, excellent elastic bendability, and superior ductility. Here we report a staggered-layer strategy that overcomes the strength-flexibility dilemma. Our findings indicate that the newly formed strong Bi–Bi covalent bond between the staggered layer leads to an average 40% increase in the bond energy of the van der Waals Te–Te bond. A large Poisson's ratio leads to a high maximum linear elastic strain (ΕEmax), enhancing shear strength by 83.3%, which is consistent with a 92.2% increase in micro-pillar compressive strength. The narrow stiffness gap and bond energy gap facilitate the coordinated deformation that maintains sustained linear elasticity during compression. Moreover, the low BFCs of the Te–Te and Te–Bi bonds (0.72 eV/Å2 and 3.85 eV/Å2) contribute to the experimentally observed bending flexibility. This staggered-layer-induced elasticity strengthening mechanism offers a promising strategy for the rational design of highly reliable wearable TE devices. © 2025 Elsevier Inc.

关键词： Compressive strength

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Optimized EUV Scatterometry Measurements with Tunable High Harmonic Generation and the Fisher Information Matrix

Optimized EUV Scatterometry Measurements with Tunable High H...

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Metrology, Inspection, and process Control XXXIX 2025

作者： Klein, Clay Jenkins, Nicholas Shao, Yunzhe Li, Yunhao Park, Seungbeom Kim, Wookrae Kapteyn, Henry Murnane, Margaret Department of Physics JILA & STROBE NSF Science & Technology Center University of Colorado NIST BoulderCO United States Core Technology R&D Team Samsung Electronics Co. Ltd. Hwasung Korea Republic of Advanced Process Development Team 4 Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwasung Korea Republic of Kapteyn-Murnane Laboratories Inc. 4775 Walnut Street #102 BoulderCO80301 United States

ISBN: (纸本)9781510686380

We present the use of high harmonic generation (HHG) to achieve sub-nanometer sensitivity to out-of-plane geometric features on an industrially relevant damascene sample with extreme ultraviolet (EUV) scatterometry. We also demonstrate a methodology to take advantage of the tuneability of HHG by selecting experimental conditions that maximize the sensitivity of EUV scatterometry. The method uses the Fisher information matrix to encode prior knowledge about the sample into a robust mathematical framework that enables automated selection of the optimal experimental conditions such as wavelength and incidence angles. Importantly, HHG allows us to use wavelength tunability across the EUV spectrum through precisely controlled phase matching to achieve these conditions. We apply this to our damascene sample to show that EUV light at ~13nm will maximize the sensitivity of our scatterometry measurements and the angle selection will break correlations between parameters to enable a reliable solution to the inverse problem. Using this approach, we are able to take full advantage of the wavelength tunability of HHG based EUV sources to support accurate metrology for next generation semiconductor devices. © 2025 SPIE.

关键词： Extreme ultraviolet lithography

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Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique

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Scientific Reports 2025年第1期15卷 1-11页

作者： Kwon, Hae In Jang, Yun Jong Kim, Kyoung Chan Gil, Hong Seong Kim, Ju Young Ryu, Seong Hyun Pyun, Do Seong Kim, Dae Whan Park, Woo Chang Lee, Ji Yeon Park, Jin Woo Park, Sang Wuk Yeom, Geun Young School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 South Korea Department of Photovoltaic System Engineering Sungkyunkwan University Suwon 16419 South Korea School of Chemical Engineering Sungkyunkwan University Suwon 16419 South Korea Department of Semiconductor Display Engineering Sungkyunkwan University Suwon 16419 South Korea Advanced Process Development Semiconductor R & D Center Samsung Electronics Co. Ltd. Hwaseong 18448 South Korea SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Suwon 16419 South Korea

EUV lithography technology, applied in nano-patterning processes, enables the creation of fine patterns below 10 nm. However, issues still remain due to the reduced etch selectivity and increased line edge roughness (LER) caused by the thin thickness and weakness of organic EUV photoresist (PR). In this study, research was conducted to improve the low etch selectivity and high LER using a novel grid pulsed ion beam etching technique. In this system, Ar/H2 plasma is generated in the inductively coupled plasma (ICP) source, and the Ar⁺/Hx⁺ ion beam is irradiated while fluorocarbon gas is injected into the process chamber. Grid pulsing technique increases the etch selectivity of SiON over EUV PR while improving LER. With a 50% duty ratio and optimal gas flow conditions (Ar:H2 ratio = 1:3 to the ion beam source and CF4:C4F8 = 1:1), the etch selectivity of SiON over EUV PR approached ∞ while maintaining the LER close to the reference.

关键词： Etch selectivity EUV PR Grid pulsing Ion beam etching LER SiON

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Nonlinear Behavior of Surface Charge Density and Zeta Potential in Microchannel Electrokinetic Flow

SSRN

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SSRN 2023年

作者： Chen, Daming Arancibia-Miranda, Nicolas Escudey, Mauricio Fu, Jiao Lu, Qin Amon, Cristina H. Galatro, Daniela Guzmán, Amador M. Facultad de Ingeniería Departamento de Ingeniería Mecánica Universidad de Santiago de Chile Av. B. O’Higgins 3363 Santiago9170020 Chile Center for the Development of Nanoscience and Nanotechnology CEDENNA Santiago9170124 Chile Facultad de Química y Biología Universidad de Santiago de Chile Av. B. O’Higgins Santiago3363 Chile Xi'an key laboratory of advanced control and intelligent process Xi'an University of Posts and Telecommunications Xi'An710121 China Solar and Thermal Energy Conversion and Storage Device and System Laboratory STECTEC Santiago Chile Escuela de Ingenieria Industrial Facultad de Ingenieria y Ciencias Universidad Diego Portales Ejercito 441 Santiago Chile Department of Mechanical and Industrial Engineering Faculty of Applied Science and Engineering University of Toronto 5 King’s College Road TorontoON Canada Department of Chemical Engineering and Applied Chemistry Faculty of Applied Science and Engineering University of Toronto 200 College Street TorontoON Canada

In this work, a combined numerical and experimental investigation of the surface charge density and zeta potential behavior is investigated for borosilicate immersed in KCl and NaCl electrolytes and for imogolite immersed in KCl, CaCl2, and MgCl2 electrolytes. Simulations and experiments of the electrokinetic flows with electrolyte solutions were performed to accurately determine the electric double layer (EDL), the zeta potential, and the surface charge density at various electrolyte concentrations and pH. The zeta potential was experimentally determined and numerically predicted by solving the coupled governing equations of mass, species, momentum, and electrical field iteratively. The zeta potential for borosilicate develops strong nonlinear behavior with the ion concentration following a power-law. Likewise, the surface charge density obeys a nonlinear behavior, decreasing as the concentration increases. Moreover, for imogolite, both the zeta potential and the surface charge density behave nonlinearly with the pH. The EDL for borosilicate and imogolite becomes thinner as the electrolyte concentration and pH increase;this behavior is caused by increased surface charge density, resulting in the higher attraction of the free charges. The reported nonlinear behavior describes more accurately the interaction of the nanoparticle surface charge with the electrolytes and its effect on the electrolyte transport properties. © 2023, The Authors. All rights reserved.

关键词： Zeta potential

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MOF-based high-entropy-alloy evaporator featuring enhanced interband transitions for efficient solar steam and green electricity generation

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Chemical Engineering Journal 2025年 517卷

作者： Dai, Chenyang Zhang, Jia-Han He, Cheng-Yu Dai, Rongrong Pan, Likun Yamauchi, Yusuke Zhang, Jing Li, Zhengtong Xu, Xingtao Marine Science and Technology College Zhejiang Ocean University Zhoushan316022 China Electronic-Photonic Smart Sensing Device R&D Team Inner Mongolia Key Laboratory of Intelligent Communication and Sensing and Signal Processing School of Electronic Information Engineering Inner Mongolia University Hohhot010021 China Research Center of Resource Chemistry and Energy Materials State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou China Shanghai Key Laboratory of Magnetic Resonance School of Physics and Electronic Science East China Normal University Shanghai200026 China Department of Materials Process Engineering of Engineering Nagoya University Nagoya464-8603 Japan The University of Queensland BrisbaneQLD4072 Australia Department of Chemical and Biomolecular Engineering Yonsei University 50 Yonsei-ro Seodaemun-gu Seoul03722 Korea Republic of Ningbo Key Laboratory of Green Petrochemical Carbon Emission Reduction Technology and Equipment Zhejiang Institute of Tianjin University Zhejiang Ningbo315201 China State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering Yangtze Institute for Conservation and Development Hohai University Nanjing210098 China

Photothermal materials exhibiting broadband optical absorption and high energy efficiency are highly sought after in the field of solar-driven evaporation. Herein, we present a novel photothermal material derived from polymetallic metal–organic frameworks (MOFs) through a d-d interband transition (d-d IBT) engineering strategy. This approach enables comprehensive occupation of electronic states within ±4 eV relative to the Fermi level through 3d transition metal coordination, achieving an exceptional average solar absorption efficiency of over 97 % across the full solar spectrum (250–2500 nm). This breakthrough effectively overcomes the inherent wide bandgap limitation of MOFs that traditionally restricts their full-spectrum solar utilization. Leveraging its remarkable broadband sunlight harvesting capacity and ultrafast localized heating performance, this evaporator engineered with high-entropy alloy nanoparticles, achieves an evaporation efficiency surpassing 95% under one sun irradiation while maintaining a high evaporation rate of 2.80 kg m−2 h−1. Moreover, this evaporator demonstrates exceptional desalination efficiency even with high-salinity seawater (20 wt%), while the waste heat generated during operation can be strategically repurposed to produce green electricity, enhancing its sustainability profile. Thus, the FeCoNiMnCuAlZn high-entropy alloy nanoparticle-based photothermal evaporator offers innovative solutions for addressing the scarcity of clean water resources and the need for green energy. © 2025

关键词： Zinc alloys

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Single-stripe tunable laser with chirped sampled gratings fabricated by nanoimprint lithography

Single-stripe tunable laser with chirped sampled gratings fa...

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作者： Yoshinaga, Hiroyuki Yanagisawa, Masaki Kaneko, Toshimitsu Akiyama, Kan Tajima, Mikio Shoji, Daisei Fujii, Takuya Shoji, Hajime Transmission Devices R and D Laboratories Sumitomo Electric Industries Ltd Yokohama 244-8588 Japan Lightwave Device Process Development Department Sumitomo Electric Device Innovations Inc Yokohama 244-0845 Japan Analysis Technology Research Center Sumitomo Electric Industries Ltd Yokohama 244-8588 Japan

The fabrication of diffraction gratings of a chirped sampled gratings distributed reflector (CSG-DR) laser by nanoimprint lithography (NIL) has been demonstrated. The diffraction gratings with highly uniform linewidth and period have been successfully fabricated by the combination of the reverse-tone NIL and precise etching techniques. The CSG-DR laser fabricated by NIL shows a sufficiently wide tuning range of 40nm as we designed. The results of this study indicate that our fabrication process for the sampled gratings utilizing the NIL technique has a high potential for the fabrication of a CSG-DR laser. © 2014 The Japan Society of Applied Physics.

关键词： Nanoimprint lithography

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4$\,\times\,$10 Gb/s High-Speed Link Over Thin GI 50/125 Plastic Optical Fibers and Compact Optical Sub-Assembly

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IEEE Photonics technology Letters 2012年第19期24卷 1670-1672页

作者： Norbert Schlepple Michihiko Nishigaki Hiroshi Uemura Kei Obara Hideto Furuyama Yoshiaki Sugizaki Hideki Shibata Yasuhiro Koike Advanced BEOL Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Yokohama Japan Faculty of Science and Technology Keio University Kanagawa Japan

We introduce an extremely thin 50/125 perfluorinated graded-index plastic optical fiber (POF) and its application in a 4×10 Gb/s optical link including our optical sub-assembly (OSA). We outline the main characteristics of the POF before the introduction of the fibers to our already established OSA is explained. Particularly low attenuation with error-free transmission down to a bending radius of 1 mm is presented in comparison to a quartz optical fiber. Furthermore eye diagrams of all four channels after 5 m over POF at 10 Gb/s are presented. Bit error rate for all channels is less than 10 -12 and remains constant when another channel is being driven simultaneously.

关键词： Optical fibers Optical attenuators Optical fiber devices Optical fiber cables Optical receivers

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Design intent utilization for lithography compliance check and layout refinement to improve manufacturability

Design intent utilization for lithography compliance check a...

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2011 e-Manufacturing and Design Collaboration Symposium, eMDC 2011 and International Symposium on Semiconductor Manufacturing, ISSM 2011

作者： Kobayashi, Sachiko Ikeuchi, Atsuhiko Kimura, Kazunari Kotani, Toshiya Tanaka, Satoshi Kyoh, Suigen Maeda, Shimon Inoue, Soichi Advanced Lithography Process Technology Department Device Process Development Center Toshiba Corporation Japan Design Technology Development Dept. Analog and Imaging Ic Div. Toshiba Corporation Semiconductor Company Japan

ISBN: (纸本)9781457716478

• Design rule shrinkage causes a problem with critical circuit performance vulnerable to process variability. • Design-aware manufacturing flow to clarify the design intent and control CD spec. in manufacturing is proposed. • This flow implemented an extraction and automatic fixing in electrically critical spot based on design intent of EM and crosstalk. • Combination of design intent and automatic hot spot fixer is available for desired circuit pattern without burden. • This flow is expected to drastically reduce the lead time and cost in both design and manufacturing. © 2011 TSIA.

关键词： Manufacture

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All-out fight against yield losses by design-manufacturing collaboration in nano-lithography era 11

All-out fight against yield losses by design-manufacturing c...

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Asia and South Pacific Design Automation Conference

作者： Soichi Inoue Sachiko Kobayashi Advanced Lithography Process Technology Department Device Process Development Center Corporate Research and Development Center Toshiba Corporation Japan

ISBN: (纸本)9781424475162

The concept of design-manufacturing collaboration for nano-lithography era has been clarified. The novel design-manufacturing system that the manufacturing tolerance reflecting design intention properly can be allocated to the layout has been proposed. According to the system, one can assign the “weak portion” explicitly on the layout, and can control the process for reducing the burden of manufacturing and further getting higher yield. More specifically, the extraction of electrically critical portion and conversion to the manufacturing tolerance has been demonstrated. The tolerance has applied to reduce computational burden of mask data preparation. Besides, the yield model-based layout scoring system has been also suggested to be significant remarkably. One can check the layout and modify not to loose the yield. Creation of yield function, layout scoring, and layout modification based upon the yield model have been demonstrated.

关键词： Layout Optimization Crosstalk Logic gates lithography Collaboration

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