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2023 International Electron Devices Meeting, IEDM 2023

作者： Kobayashi, S. Tashiro, K. Minemura, Y. Nakagami, K. Arita, K. Oohashi, T. Funayama, K. Sakai, H. Mushiga, M. Okabe, K. Kanno, Y. Shimizu, S. Fujikura, E. Nakae, A. Yamaguchi, K. Yamawaki, H. Nakajima, K. Sato, M. Advanced Memory Development Center Kioxia Corporation Mie Yokkaichi Japan Advanced Process & Device Development Group Western Digital Corporation Mie Yokkaichi Japan

ISBN: (纸本)9798350327670

We report the advantages of using CMOS directly bonded to array (CBA) technology in 3D flash memory. Improvements in interface speed, operation latency, and memory cell reliability are explored based on experimental and simulated data from 218-word-line (WL) stacked structures. The improvement derived from CBA enables BiCS FLASH™ generation 8 to operate with a high interface speed of 3.2Gbps and a high program throughput of 205MB/s with 3 bits per memory cell. A chip architecture to achieve well-scaled bit density of more than 18Gb/mm2, the world's highest in the 2xx- WL (about 218-232 WL) node, is also discussed. © 2023 IEEE.

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Optimal Design of WET Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization 30

Optimal Design of WET Etching Bath for 3D Flash Memories Usi...

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30th International Symposium on Semiconductor Manufacturing, ISSM 2024

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokkaichi-shi Japan Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokohama-shi Japan Kioxia Corporation Advanced Memory Process Development Center Memory Division Yokkaichi-shi Japan

ISBN: (纸本)9798331510589

In recent years, the complexity of semiconductor manufacturing processes has increased, leading to a growing need for the high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids within the process bath can vary depending on the device structure, causing variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that iteratively adjusts the device structure based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memories, word-line formation in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process. This fluctuation may cause various problems. This study introduces an innovative method utilizing multi-objective Bayesian optimization to derive optimal wet etching bath design parameters;this method is informed by image and physical-quantity data from fluid dynamics simulations [1]. This approach is validated through simulation experiments, whose results are used to identify the best possible wet etching bath designs effectively. © 2024 IEEE.

关键词： Wet etching

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Optimal Design of Wet Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization

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IEEE Transactions on Semiconductor Manufacturing 2025年

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang KIOXIA Corporation AI and System Research Center Frontier Technology R and D Institute Japan KIOXIA Corporation Advanced Memory Process Development Center Memory Division Japan

Recently, the complexity of semiconductor manufacturing processes has increased, resulting in a growing need for high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids in the process bath can vary depending on the device structure, which causes variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that adjusts the device structure iteratively based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memory devices, the formation of word lines in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process, which can cause various problems. Thus, this study proposes an innovative multi-objective Bayesian optimization method that is informed by image and physical quantity data from fluid dynamics simulations to derive optimal wet etching bath design parameters. The proposed method was validated through simulation experiments, and the simulation results were used to identify the best possible wet etching bath designs. © 1988-2012 IEEE.

关键词： Wet etching

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Correcting on-chip distortion of control pulses with silicon spin qubits

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Chinese Physics B 2025年第1期34卷 265-271页

作者： Ming Ni Rong-Long Ma Zhen-Zhen Kong Ning Chu Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Gang Luo Di Liu Gang Cao Gui-Lei Wang Hai-Ou Li Guo-Ping Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China(USTC)Hefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Integrated Circuit Advanced Process Research and Development Center Institute of MicroelectronicsChinese Academy of Sciences(CAS)Beijing 100029China Hefei National Laboratory Hefei 230088China Beijing Superstring Academy of Memory Technology Beijing 100176China Origin Quantum Computing Company Limited Hefei 230026China

In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and ***,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control *** methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit *** two methods differ in correction accuracy and *** first,coarse predistortion(CPD)method,partially mitigates *** second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation *** methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic *** believe these methods will enhance qubit characterization accuracy and operation quality in future applications.

关键词： quantum computation quantum dot pulse distortion

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Identification of key atomic process of Metal-induced lateral crystallization from First-principles Calculations

Identification of key atomic process of Metal-induced latera...

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International Conference on Simulation of Semiconductor processes and Devices (SISPAD)

作者： Yutaro Ogawa Hikari Suzuki Masayasu Miyata Advanced Memory Development Center Memory Division Kioxia Corporation Yokohama Japan Core Technology Research Center Frontier Technology R&D Institute Kioxia Corporation Yokohama Japan

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

In order to improve the efficiency of metal-induced lateral crystallization (MILC) using Ni, it is important to understand the fundamental mechanisms. In this study, the NiSi 2 /amorphous Si (a-Si) interface is appropriately modeled and the atom transfer behavior during the MILC process was explored by first-principles calculations. It is found that the overall picture of MILC mechanism can be effectively comprehended through three fundamental processes: (1) the formation of Ni vacancies at the a-Si interface, (2) the diffusion of Ni vacancies within the bulk NiSi2, and (3) the reconstruction of the c-Si interface. The trends under stress, observed in experiments, are explained by applying this mechanism to the MILC process.

关键词： Surface reconstruction Crystallization Market research Nickel Silicon Semiconductor process modeling Epitaxial growth Stress Surface treatment

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High Peformance 3D Flash memory with 3.2Gbps Interface and 205MB/s Program Throughput based on CBA(CMOS Directly Bonded to Array) Technology

High Peformance 3D Flash Memory with 3.2Gbps Interface and 2...

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International Electron Devices Meeting (IEDM)

作者： S. Kobayashi K. Tashiro Y. Minemura K. Nakagami K. Arita T. Oohashi K. Funayama H. Sakai M. Mushiga K. Okabe Y. Kanno S. Shimizu E. Fujikura A. Nakae K. Yamaguchi H. Yamawaki K. Nakajima M. Sato Advanced Memory Development Center Kioxia Corporation Yokkaichi Mie Japan Advanced Process & Device Development Group Western Digital Corporation Yokkaichi Mie Japan

We report the advantages of using CMOS directly bonded to array (CBA) technology in 3D flash memory. Improvements in interface speed, operation latency, and memory cell reliability are explored based on experimental and simulated data from 218-word-line (WL) stacked structures. The improvement derived from CBA enables BiCS FLASH™ generation 8 to operate with a high interface speed of 3.2Gbps and a high program throughput of 205MB/s with 3 bits per memory cell. A chip architecture to achieve well-scaled bit density of more than 18Gb/mm 2 , the world's highest in the 2xx- WL (about 218-232 WL) node, is also discussed.

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Optimal Design of WET Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization

Optimal Design of WET Etching Bath for 3D Flash Memories Usi...

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Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & International Symposium on Semiconductor Manufacturing (ISSM)

作者： Miyuki Kouda Yumi Mori Tomohiko Sugita Youyang Ng AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation Yokkaichi-shi Japan AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation Yokohama-shi Japan Advanced Memory Process Development Center Memory Division KIOXIA Corporation Yokkaichi-shi Japan

ISBN: (数字)9798331510589

ISBN: (纸本)9798331510596

In recent years, the complexity of semiconductor manufacturing processes has increased, leading to a growing need for the high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids within the process bath can vary depending on the device structure, causing variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that iteratively adjusts the device structure based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memories, word-line formation in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process. This fluctuation may cause various problems. This study introduces an innovative method utilizing multi-objective Bayesian optimization to derive optimal wet etching bath design parameters; this method is informed by image and physical-quantity data from fluid dynamics simulations [1]. This approach is validated through simulation experiments, whose results are used to identify the best possible wet etching bath designs effectively.

关键词： Wet etching Three-dimensional displays Fluid dynamics Semiconductor device manufacture Silicon Bayes methods Flash memories Optimization Silicon dioxide Substrates

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Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)]

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Japanese Journal of Applied Physics 2024年第11期63卷 119301-119301页

作者： Hiroomi Nakajima Tomoaki Shino Hironobu Furuhashi Jun Nishimura Tomoki Higashi Katsuyuki Fujita Kosuke Hatsuda Ryo Fukuda Takeshi Kajiyama Memory Development Strategy Group2 Memory Development Strategy Division KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan File Memory Device Peripheral Element Development Group File Memory Device Engineering Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Advanced Memory Development Center KIOXIA Corporation 800 Yamanoissiki-Cho Yokkaichi Mie-Pref. 510-0906 Japan Memory Device Engineering Department KIOXIA Systems Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan Circuit Technology Research Department AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Memory Design Group 4 Memory Design Department 2 Memory Design Managing Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan

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Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

arXiv

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arXiv 2022年

作者： Kong, Zhenzhen Li, Zonghu Cao, Gang Su, Jiale Zhang, Yiwen Liu, Jinbiao Liu, Jingxiong Ren, Yuhui Wei, Laiming Guo, Guoping Wu, Yuanyuan Radamson, Henry H. Li, Junfeng Wu, Zhenhua Li, Haiou Yang, Jiecheng Zhao, Chao Wang, Guilei Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China Hefei National Laboratory Hefei230088 China School of Advanced Manufacturing Engineering Hefei University Hefei230601 China Origin Quantum Computing Company Limited Hefei230026 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China Beijing Superstring Academy of Memory Technology 100176 China

We fabricate an undoped Ge quantum well under a 30 nm relaxed Ge0.8Si0.2 shallow barrier. The bottom barrier contains Ge0.8Si0.2 (650 ℃) followed by Ge0.9Si0.1 (800 ℃) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The Ge0.8Si0.2 barrier introduces enough in-plane parallel strain (Ε strain -0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2×106 cm2/Vs and a very low percolation of 5.625 × 1010cm−2. A tunable fractional quantum Hall effect at high densities and high magnetic fields has also been observed. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum *** Codes 81-05, 81V70 © 2022, CC BY-NC-ND.

关键词： Germanium

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Complement component C4a binds to oxytocin and modulates plasma oxytocin concentrations and social behavior in male mice

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Biochemical and Biophysical Research Communications 2025年 771卷 152004页

作者： Yamamoto, Yasuhiko Zhang, Anpei Yuhi, Teruko Harashima, Ai Shabalova, Anna A. Nishizawa, Emina Moriya, Michiru Munesue, Seiichi Oshima, Yu Gerasimenko, Maria Furuhara, Kazumi Tsuji, Chiharu Yokoyama, Shigeru Horike, Shinichi Terakawa, Jumpei Daikoku, Takiko Nishiuchi, Takumi Sakai, Katsuya Higashida, Haruhiro Department of Biochemistry and Molecular Vascular Biology Kanazawa University Graduate School of Medical Sciences Kanazawa 920-8640 Japan Department of Basic Research on Social Recognition and Memory Research Centre for Child Mental Development Kanazawa University Kanazawa 920-8640 Japan Division of Integrated OMICS Research Department of Advanced Sciences Research Center for Experimental Modeling of Human Disease Kanazawa 920-8640 Japan Division of Animal Disease Model Department of Advanced Sciences Research Center for Experimental Modeling of Human Disease Kanazawa 920-8640 Japan Division of Tumor Dynamics and Regulation Cancer Research Institute Kanazawa University Kanazawa 920-1192 Japan

Oxytocin (OT) is a hormone with a short half-life that is released from the posterior pituitary gland into the bloodstream. It plays an important role in childbirth, breastfeeding, and social behavior in humans and animals. However, the endogenous OT system, including plasma OT pharmacokinetics, is not fully understood. In this study, we used a click chemistry probe to discover a novel OT-binding protein in human serum and identified C4a, a peptidase-cleaved fragment of complement component 4 (C4). A direct association between OT and C4a was also confirmed. Upon knocking out Slp gene, which is one of the two mouse C4 genes, the level of free form of plasma OT was higher in Slp knockout (Slp^−/−) mice than in wild-type (Slp^+/+) mice after intraperitoneal OT injection. In addition, open-field tests revealed that social interactions were higher in Slp^−/− mice than Slp^+/+ mice. An in vitro blood-brain barrier model showed that C4a neither inhibited nor accelerated receptor for advanced glycation end-product (RAGE)-dependent brain transport in OT. Our data validate the novel concept that C4a with OT-binding capacity can alter the dynamics of the free form of OT concentrations in the plasma, which may disturb the availability of OT to the brain, resulting in an interruption of OT-associated social behavior. © 2025 The Author(s)

关键词： Behavior C4a Complement component Oxytocin RAGE Slp knockout mice

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