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检索条件"机构=Advanced Module Process Development"
41 条 记 录,以下是31-40 订阅
A 90 nm CMOS technology with modular quadruple gate oxides for advanced SoC applications
A 90 nm CMOS technology with modular quadruple gate oxides f...
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Annual International Symposium on Reliability Physics
作者: M.R. Mirabedini V.P. Gopinath A. Kamath M.Y. Lee W.J. Hsia V. Hornback Y. Le A. Badowski B. Baylis E. Li S. Prasad O. Kobozeva J. Haywood W. Catabay W.C. Yeh Advanced Technology Development LSI Logic Corporation Milpitas CA USA Process Module Development LSI Logic Corporation Gresham OR USA LSI Logic Corporation Santa Clara CA USA
This paper describes a 90 nm System-on-a-chip (SoC) technology with modular quadruple gate oxides (16, 28, 50, 64 /spl Aring/) on the same chip allowing integration of optimized transistors operating at supply voltage... 详细信息
来源: 评论
Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides
Effect of nitrogen incorporation on PMOS negative bias tempe...
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IEEE International Workshop Integrated Reliability
作者: L. Duong E. Li V. Gopinath S. Prasad J. Lin D. Pachura V. Hornback Characterization and Reliability LSI Logic Corporation Milpitas CA USA Advanced Device Development LSI Logic Corporation Milpitas CA USA Process Module Development LSI Logic Corporation Milpitas CA
This work reports the effect of nitrogen incorporation on negative bias temperature instability (NBTI) of PMOS devices with 1.4 nm equivalent oxide thickness. It is found that for these ultra-thin oxynitrides, the lin... 详细信息
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Stress release for shallow trench isolation by single-wafer, rapid-thermal steam oxidation  10
Stress release for shallow trench isolation by single-wafer,...
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10th IEEE International Conference on advanced Thermal processing of Semiconductors
作者: Luoh, T Chen, CS Yang, LW Shih, HH Chen, KC Hsueh, C Chung, H Pan, S Lu, CY Advanced Module Process Development Silicon Laboratory Macronix International Co. Ltd. Taiwan
Shallow trench isolation (STI) is the predominant isolation technology for advanced integrated circuits. Dislocations are often found at STI after repeated thermal cycles. For STI integrity, it is insufficient to have... 详细信息
来源: 评论
Cycle time and process improvement by single wafer thermal processing in production environment  10
Cycle time and process improvement by single wafer thermal p...
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10th IEEE International Conference on advanced Thermal processing of Semiconductors
作者: Chen, KC Shih, HH Hsueh, C Chung, H Pam, S Lu, CY Chou, CW Chen, SS Advanced Module Process Development Si Laboratory Macronix International Co. Ltd. Taiwan Applied Materials Inc. Thermal Process and Gate Division United States
We have demonstrated cycle time reduction, accelerated yield learning and product introduction can be achieved by single-wafer processing without a major impact on wafer production cost. The oxidation mechanism reveal... 详细信息
来源: 评论
Stress release for shallow trench isolation by single-wafer, rapid-thermal steam oxidation
Stress release for shallow trench isolation by single-wafer,...
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International Conference on advanced Thermal processing of Semiconductors (RTP)
作者: T. Luoh C.S. Chen L.W. Yang H.H. Shih K.C. Chen C. Hsueh H. Chung S. Pan C.Y. Lu Advanced Module Process Development Silicon Laboratory Macronix International Company Limited Taiwan
Shallow trench isolation (STI) is the predominant isolation technology for advanced integrated circuits. Dislocations are often found at STI after repeated thermal cycles. For STI integrity, it is insufficient to have... 详细信息
来源: 评论
Design rule methodology to improve the manufacturability of the copper CMP process
Design rule methodology to improve the manufacturability of ...
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IEEE International Conference on Interconnect Technology
作者: S. Lakshminarayanan P. Wright J. Pallinti Process Technology development LSI Logic Corporation Santa Clara CA USA Process Module development and advanced research Gresham OR USA
A systematic approach to generate design rules and layout guidelines for damascene metal layers that enhance the robustness and manufacturability of designs is presented. The intra-die sheet resistance variation due t... 详细信息
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Cycle time and process improvement by single wafer thermal processing in production environment
Cycle time and process improvement by single wafer thermal p...
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International Conference on advanced Thermal processing of Semiconductors (RTP)
作者: K.C. Chen H.H. Shih C. Hsueh H. Chung S. Pam C.Y. Lu C.W. Chou S.S. Chen Advanced Module Process Development Si Laboratory Macronix International Company Limited Taiwan Thermal Process and Gate Division Applied Materials Inc. USA
We have demonstrated that cycle time reduction, accelerated yield learning and product introduction can be achieved by single-wafer processing without a major impact on wafer production cost. The oxidation mechanism r... 详细信息
来源: 评论
TDDB evaluation of plasma-enhanced Si/sub 3/N/sub 4/ nitride capacitors in CMOS integration schemes
TDDB evaluation of plasma-enhanced Si/sub 3/N/sub 4/ nitride...
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International Symposium on Plasma- and process-Induced Damage
作者: D.A. Gajewski J. Walls M. Martin T. Remmel Advanced Module Integration and Development Laboratory Motorola Digital DNA Laboratories Tempe AZ USA Advanced Process Development & External Research Motorola Digital DNA Laboratories Tempe AZ USA
We present constant voltage (CV) time-dependent dielectric breakdown (TDDB) measurements of integrated metal-insulator-metal (MIM) capacitors with plasma-enhanced chemical vapor deposited Si/sub 3/N/sub 4/ nitride (PE... 详细信息
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Defect reduction of copper BEOL for advanced ULSI interconnect
Defect reduction of copper BEOL for advanced ULSI interconne...
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IEEE International Conference on Interconnect Technology
作者: Hsueh-Chung Chen Teng-Chun Tsai Yi-Min Huang Chao-Hui Huang Chien-Hung Chen Yung-Tsung Wei Ming-Sheng Yang Juan-Yuan Wu Tri-Rung Yew Jen-Kon Chen United Foundry Service United Microelectronics Corporation Limited Hopewell Junction NY USA Advanced Technology Development Department United Microelectronics Corporation Limited Hsinchu Taiwan Division Process Module A Department United Microelectronics Corporation Limited Hsinchu Taiwan
In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivit... 详细信息
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Study of indium cross contamination in quarter micron device implants
Study of indium cross contamination in quarter micron device...
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13th International Conference on Ion Implantation Technology (IIT 2000)
作者: Cheng, SJ Chen, WW Yang, YC Hwang, YL Varian Semiconductor Equipment Associates Pacific Inc. Taiwan Branch Taiwan Diffusion Division Advanced Module Process Development (AMPD) Macronix International Co. Ltd. Taiwan
As the device technology node shrinks to sub 0.18 mum, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in remo... 详细信息
来源: 评论