Subtle Ti/TiN bump defects are observed after thermal annealing in the development step of a back-end-of-line (BEOL) via metallization. It disturbs the endpoint detection of a sequential tungsten (W) chemical-mechanic...
详细信息
Subtle Ti/TiN bump defects are observed after thermal annealing in the development step of a back-end-of-line (BEOL) via metallization. It disturbs the endpoint detection of a sequential tungsten (W) chemical-mechanical planarization (CMP) process and results in W residue on the surface of the wafer. SIMS analysis conducted before Ti/TiN deposition indicates the presence of high concentrations of fluorine (F) atoms that have already doped into the oxide film after the via hole plasma etching process, even in the presence of an amorphous carbon hard-mask. The doped F species could diffuse out of the surface region, and then react with as-deposited Ti/TiN to form volatile TiF 4 during high-temperature annealing. As a result, severe metallic bump-like defects are observed. In this study, we report that the formation of the metallic bump defect is correlated to both the RF bias frequency, and the RF bias power applied in the capacitive-coupled fluorocarbon plasma via feature etching.
Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of s...
详细信息
Dependency of asymmetric etched profiles on open-ratio and pattern-size within the wafer was studied in a magnetic Very High Frequency (VHF) Plasma etching system for high aspect-ratio multiple alternating layers of silicon oxide/polysilicon (OP) etching. The etched physical features are sensitive to the overall open ratio on the wafer; the profile sidewalls became bent while the open ratio changed from 8% to 40%. In this study, the profile recovery from a method of design of experiments (DOE) and specific inductively magnetic field applied in the etching system was explored. The resulting etched profile is successfully back to normal on multi-layered OP film stack at 40% of open ratio. Even at next generation node development, the etching based on DOE also demonstrates good shape control on the etched profile which stacked with OP pairs over 3um in thickness in extremely high aspect ratio trench etching.
Most of simulation activities implemented on semiconductor manufacturing are focus on the device characteristics, and electrical properties. Less investigation pays attention on micro-structure stress/strain calculati...
详细信息
We present several efforts for arcing reduction during high aspect ratio etching. Strategies including pulsing etching adjustments, ex situ multi-cyclic etch approach, flush step incorporation, E-chuck voltage operati...
详细信息
ISBN:
(纸本)9781509054497
We present several efforts for arcing reduction during high aspect ratio etching. Strategies including pulsing etching adjustments, ex situ multi-cyclic etch approach, flush step incorporation, E-chuck voltage operation, cap material, etc. are explored. The details are discussed in the paper.
Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the unde...
详细信息
Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The p...
详细信息
Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The p...
详细信息
ISBN:
(纸本)9781467383271
Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization performance is influenced by topography characteristics, line/space width, pattern density, slurry chemistry, rotation speed, PAD type, force/pressure, etc. However, as device continuous shrink, CMP process becomes more challengeable to achieve planarization. There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area. Wide trenches or open structures usually enhance the dishing issue, while dense trenches lead to more erosion. Nitride erosion exposes the underlying active devices will lead to device failure; on the other hand, oxide dishing results in poor isolation.
Color abnormal phenomenon in post Cu chemical mechanical planarization (CMP) is found in 3X nm flash memory. TEM cross-section shows that there is no Cu residue but has localized thickness variation. This color abnorm...
详细信息
ISBN:
(纸本)9781479972425
Color abnormal phenomenon in post Cu chemical mechanical planarization (CMP) is found in 3X nm flash memory. TEM cross-section shows that there is no Cu residue but has localized thickness variation. This color abnormal phenomenon cannot be eliminated with subsequently Cu and barrier polishing. According to experimental results, the non-uniform inhibitor distribution of Cu slurry issue will enhance the localized Cu dishing profile and lead to thickness variations after barrier polishing. This phenomenon is found especially at high selectivity Cu slurry in advanced Cu CMP process. Color abnormal issue is resolved by implementing the slurry with lower corrosion inhibitor concentration. Although it may have slightly dishing issue after Cu polishing, it can be optimized by subsequent barrier polishing process.
Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the unde...
详细信息
ISBN:
(纸本)9781467383271
Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the undesired materials in the circumstance with the feeding slurry and the polishing pad. As the device scale shrink, defect and uniformity control have become the major challenge and critical issues of CMP process. Since the CMP performance strongly depends on the consumable parts with complex process parameters, it may take plenty of consumable cost and working hours to improve the processes issues. Therefore the finite element method for the CMP process simulation is adopted to improve the efficiency of CMP process tuning in recent years [1].
暂无评论