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检索条件"机构=Advanced Module Process Development Div."

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Pattern damage and slurry behavior analysis of CMP process by mechanical and fluid simulations-Yi-Sheng Cheng

Pattern damage and slurry behavior analysis of CMP process b...

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IEEE International Symposium on Semiconductor Manufacturing

作者： Wen-Cheng Yang Shing-Ann Luo YuKai Huang Yung-Tai Hung Tuung Luoh Lin-Wuu Yang Tahone Yang Kuang-Chao Chen Advanced Module Process Development Div. Technology Development Center Hsin-chu Taiwan R. O. C.

ISBN: (纸本)9781467383271

Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the undesired materials in the circumstance with the feeding slurry and the polishing pad. As the device scale shrink, defect and uniformity control have become the major challenge and critical issues of CMP process. Since the CMP performance strongly depends on the consumable parts with complex process parameters, it may take plenty of consumable cost and working hours to improve the processes issues. Therefore the finite element method for the CMP process simulation is adopted to improve the efficiency of CMP process tuning in recent years [1].

关键词： Slurries Semiconductor device modeling Finite element analysis Stress Mathematical model Predictive models Fluids

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Slurry selectivity to local thickness variations control in advanced Cu CMP process

Slurry selectivity to local thickness variations control in ...

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China Semiconductor Technology International Conference (CSTIC)

作者： Kuang-Wei Chen Tung-He Chou Syue-Ren Wu Chun-Fu Chen Yung-Tai Hung Tuung Luoh Ling-Wuu Yang Tahone Yang Kuang-Chao Chen Advanced Module Process Development Div Technology Development Center Hsin-chu Taiwan R.O.C

ISBN: (纸本)9781479972425

Color abnormal phenomenon in post Cu chemical mechanical planarization (CMP) is found in 3X nm flash memory. TEM cross-section shows that there is no Cu residue but has localized thickness variation. This color abnormal phenomenon cannot be eliminated with subsequently Cu and barrier polishing. According to experimental results, the non-uniform inhibitor distribution of Cu slurry issue will enhance the localized Cu dishing profile and lead to thickness variations after barrier polishing. This phenomenon is found especially at high selectivity Cu slurry in advanced Cu CMP process. Color abnormal issue is resolved by implementing the slurry with lower corrosion inhibitor concentration. Although it may have slightly dishing issue after Cu polishing, it can be optimized by subsequent barrier polishing process.

关键词： Slurries process control

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Design intent utilization for lithography compliance check and layout refinement to improve manufacturability

Design intent utilization for lithography compliance check a...

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2011 e-Manufacturing and Design Collaboration Symposium, eMDC 2011 and International Symposium on Semiconductor Manufacturing, ISSM 2011

作者： Kobayashi, Sachiko Ikeuchi, Atsuhiko Kimura, Kazunari Kotani, Toshiya Tanaka, Satoshi Kyoh, Suigen Maeda, Shimon Inoue, Soichi Advanced Lithography Process Technology Department Device Process Development Center Toshiba Corporation Japan Design Technology Development Dept. Analog and Imaging Ic Div. Toshiba Corporation Semiconductor Company Japan

ISBN: (纸本)9781457716478

• Design rule shrinkage causes a problem with critical circuit performance vulnerable to process variability. • Design-aware manufacturing flow to clarify the design intent and control CD spec. in manufacturing is proposed. • This flow implemented an extraction and automatic fixing in electrically critical spot based on design intent of EM and crosstalk. • Combination of design intent and automatic hot spot fixer is available for desired circuit pattern without burden. • This flow is expected to drastically reduce the lead time and cost in both design and manufacturing. © 2011 TSIA.

关键词： Manufacture

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Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

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Symposium on VLSI Technology

作者： D.H. Kang J.S. Kim Y.R. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong D.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. Ryoo J.M. Shin D.W. Lim S.S. Park J.H. Kim W.I. Park K.R. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization Degradation Amorphous materials Writing Resistance heating Temperature Phase change materials Switches Cooling

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Newly found anomalous gate leakage current (AGLC) for 65 nm node and beyond, and its countermeasure using nitrogen implanted poly-Si

Newly found anomalous gate leakage current (AGLC) for 65 nm ...

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2006 Symposium on VLSI Technology, VLSIT

作者： Togo, M. Suzuki, T. Hasegawa, E. Koyama, S. Fukai, T. Sakakidani, A. Miyake, S. Watanabe, T. Yamamoto, I. Tanaka, M. Kawashima, Y. Kunimune, Y. Ikeda, M. Imai, K. Advanced Device Development Div. 1120 Shimokuzawa Sagamihara Kanagawa 229-1198 Japan Process Technology Div. 1120 Shimokuzawa Sagamihara Kanagawa 229-1198 Japan Test Analysis Technology Development Div. NEC Electronics Corp. 1120 Shimokuzawa Sagamihara Kanagawa 229-1198 Japan System Devices Research Labs. NEC Corp. 1120 Shimokuzawa Sagamihara Kanagawa 229-1198 Japan

ISBN: (纸本)1424400058

We found a new anomalous gate leakage current (AGLC) of ultra-thin gate-SiON, which may directly impact standby leakage and yield for 65 nm node and beyond. We have identified the AGLC mechanism and also developed gate-stack fabrication process as effective countermeasures. Reducing gate-SiON to less than 1.3 nm induces AGLC leading to reliability degradation in nFET With relatively large Phosphorous doping of gate electrode, gate length larger than 0.1 μm and very large total width comparable to product level, AGLC can be observed even in 1.3 nm gate-SiON which is a typical gate dielectric thickness for 65 nm node. Nitrogen implantation into poly-Si suppresses AGLC and effectively prevents the reliability degradation while boosting drivability, as the poly-Si grain size is reduced. For suppression of AGLC for even thinner gate-SiON of 1.1 nm, additional poly-Si/SiON fabrication process optimization has been implemented. © 2006 IEEE.

关键词： Leakage currents

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Full integration of highly manufacturable 512Mb PRAM based on 90nm technology

Full integration of highly manufacturable 512Mb PRAM based o...

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2006 International Electron Devices Meeting, IEDM

作者： Oh, J.H. Park, J.H. Lim, Y.S. Lim, H.S. Oh, Y.T. Kim, J.S. Shin, J.M. Park, J.H. Song, Y.J. Ryoo, K.C. Lim, D.W. Park, S.S. Kim, J.I. Kim, J.H. Yu, J. Yeung, F. Jeong, C.W. Kong, J.H. Kang, D.H. Koh, G.H. Jeong, G.T. Jeong, H.S. Kim, Kinam Advanced Technology Development Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Kiheung-Eup Yongin Kyunggi-Do 449-900 Korea Republic of Process Development Team Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Kiheung-Eup Yongin Kyunggi-Do 449-900 Korea Republic of

ISBN: (纸本)1424404398

Fully functional 512Mb PRAM with 0.047m2 (5.8F2) cell size was successfully fabricated using 90nm diode technology in which we developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2Sb2Te5. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85C.

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Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology

Highly reliable 256Mb PRAM with advanced ring contact techno...

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2006 Symposium on VLSI Technology, VLSIT

作者： Song, Y.J. Ryoo, K.C. Hwang, Y.N. Jeong, C.W. Lim, D.W. Park, S.S. Kim, J.I. Kim, J.H. Lee, S.Y. Kong, J.H. Ahn, S.J. Lee, S.H. Park, J.H. Oh, J.H. Oh, Y.T. Kim, J.S. Shin, J.M. Park, J.H. Fai, Y. Koh, G.H. Jeong, G.T. Kim, R.H. Lim, H.S. Park, I.S. Jeong, H.S. Kim, Kinam Advanced Technology Development San #24 Nongseo-Ri Kiheung-Eup Yongin Kyunggi-Do 449-900 Korea Republic of Process Technology Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Kiheung-Eup Yongin Kyunggi-Do 449-900 Korea Republic of

ISBN: (纸本)1424400058

advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Gb2Sb2Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PRAM and beyond. © 2006 IEEE.

关键词： Random access storage

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Highly Reliable 256Mb PRAM with advanced Ring Contact Technology and Novel Encapsulating Technology

Highly Reliable 256Mb PRAM with Advanced Ring Contact Techno...

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Symposium on VLSI Technology

作者： Y.J. Song K.C Ryoo Y.N. Hwang C.W. Jeong D.W. Lim S.S. Park J.I. Kim J.H. Kim S.Y. Lee J. Kong S. Ahn S.H. Lee J.H. Park J.H. Oh Y.T. Oh J.S. Kim J. Shin J. Park Y. Fai G. Koh G.T. Jeong R.H. Kim H.S. Lim I.S. Park H.S. Jeong H. Jeong K. Kim Advanced Technology Development Semiconductor Research and Development Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea Advanced Technology Development Semicond. R&D Div. Samsung Electron. Co. Ltd. Process Technology Semiconductor R&D Div Samsung Electronics Co. Ltd Yongin Kyunggi-Do Korea

ISBN: (纸本)142440004X

advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Ge 2 Sb 2 Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PRAM and beyond

关键词： Phase change random access memory Dielectrics Degradation Tellurium Electrodes CMOS technology Planarization Cleaning Research and development Manufacturing processes

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Highly reliable 50nm contact cell technology for 256Mb PRAM

Highly reliable 50nm contact cell technology for 256Mb PRAM

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2005 Symposium on VLSI Technology

作者： Ahn, S.J. Hwang, Y.N. Song, Y.J. Lee, S.H. Lee, S.Y. Park, J.H. Jeong, C.W. Ryoo, K.C. Shin, J.M. Park, J.H. Fai, Y. Oh, J.H. Koh, G.H. Jeong, G.T. Joo, S.H. Choi, S.H. Son, Y.H. Shin, J.C. Kim, Y.T. Jeong, H.S. Kim, Kinam Advanced Technology Development Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Yongin Kyunggi-Do 449-900 Korea Republic of Process Development Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Yongin Kyunggi-Do 449-900 Korea Republic of Computer Aided Engineering Teams Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Yongin Kyunggi-Do 449-900 Korea Republic of

ISBN: (纸本)4900784001

Novel small contact fabrication technologies were proposed to realize reliable high density 256Mb PRAM(Phase Change Memory) product. Introducing the 2-step CMP (Chemical Mechanical Polishing) process and the ring-shaped contact structure, the contact area distribution was greatly improved even at the smallest contact diameter of 50nm node. The validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0. 10μm CMOS technology.

关键词： Random access storage

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Highly manufacturable high density phase change memory of 64Mb and beyond

Highly manufacturable high density phase change memory of 64...

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IEEE International Electron Devices Meeting, 2004 IEDM

作者： Ahn, S.J. Song, Y.J. Jeong, C.W. Shin, J.M. Fai, Y. Hwang, Y.N. Lee, S.H. Ryoo, K.C. Lee, S.Y. Park, J.H. Horii, H. Ha, Y.H. Yi, J.H. Kuh, B.J. Koh, G.H. Jeong, G.T. Jeong, H.S. Kim, Kinam Ryu, B.I. Advanced Technology Development Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Yongin Kyunggi-Do 449-900 Korea Republic of Process Development Semiconductor R and D Div. Samsung Electronics Co. Ltd. San #24 Nongseo-Ri Yongin Kyunggi-Do 449-900 Korea Republic of

Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge2Sb2Te5(GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR Flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new non-volatile memory markets. ©2004 IEEE.

关键词： Random access storage

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