In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivit...
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ISBN:
(纸本)0780366786
In this paper, a full discussion of the defect reduction in copper BEOL technology of a 1P/3M logic product is presented for the first time. Defectivity is inspected from AEI to CMP on various metal levels. Defectivity is classified into non CMP-related type and CMP-related type. Most of the non-CMP type defects are foreign matter coming from the environment or from the processing residues. They can be effectively removed in a CMP step, as long as they were not trapped in the metal trench. On the other hand, the CMP-related type defects impact the consecutive process and yield significantly. Examples of the killer defects are slurry residues, corrosion, and scratching. Prevention and reduction of defects is discussed. Product yield is greatly improved after the reduction of defectivity.
As the device technology node shrinks to sub 0.18 mum, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in remo...
详细信息
ISBN:
(纸本)0780364627
As the device technology node shrinks to sub 0.18 mum, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in removing residual In, cross contamination of indium in the ion implanter is the main concern for a mass production machine. This paper reviews the impact of the cross contamination on the different implant layers in 0.25 mum device process flow.
As the device technology node shrinks to sub 0.18 /spl mu/m, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty i...
详细信息
ISBN:
(纸本)0780364627
As the device technology node shrinks to sub 0.18 /spl mu/m, a heavier dopant such as indium (In) is required for Super-Steep-Retrograde channel (SSR) and Halo (Pocket) implant application. Because of the difficulty in removing residual In, cross contamination of indium in the ion implanter is the main concern for a mass production machine. This paper reviews the impact of the cross contamination on the different implant layers in 0.25 /spl mu/m device process flow.
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