Chemical mechanical polishing (CMP) is becoming a widely used technology to meet the precise machining in various applications. And also, the topography of pattern wafer surface shows very serious challenges. In semic...
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W seam is a common defect post WCMP at advancedtechnology node, which seriously affects the electrical performance of the device and the yield of the chip. The mainly suspected directions are the poor ability of the ...
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Transmission rate and pattern density become the key factors affecting CU CMP EDP Curve at advanced node. Different CU line pattern density determines the difference of CMP incoming topography. This incoming pattern l...
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As the semiconductor manufacturing process enters the FinFET node, the process window becomes narrower, and the requirements for the uniformity of chemical mechanical polishing (CMP) become higher, by which the negati...
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In the advanced-tech node's shallow trench insulation (STI) chemical mechanical planarization (CMP) process development, by doing design of experiments (DOEs) and repeat runs, the scratch defect count was successf...
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With the development of advanced semiconductor device features shrinking, chemical mechanical polishing (CMP) is becoming an enabling technology to meet the precise machining in various applications. At the same time,...
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Endpoint detection technology plays an important role in chemical mechanical polishing (CMP) technology, and is affected by many aspects in the actual production process. Because the Endpoint curve can directly reflec...
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One of the most critical challenges for lithography process is to effectively control all critical patterns over one field, across wafer, and from lot to lot consistently. With design rules shrink, the lithography pro...
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ISBN:
(数字)9781665497589
ISBN:
(纸本)9781665497589
One of the most critical challenges for lithography process is to effectively control all critical patterns over one field, across wafer, and from lot to lot consistently. With design rules shrink, the lithography process has become more vulnerable, and the critical patterns control becomes more and more challenging. ASML Imaging optimizer (IMO) dose control has been widely adapted to control CD uniformity (CDU) of critical patterns, with designed marks or patterns in most of the situations [1]-[3]. However, this traditional method has a few weaknesses at logic foundry environment. First, the designed marks are often not representative of random logic critical device patterns, thus leads to a situation that marks are controlled well, while device patterns are not. The designed marks normally put more constrains on device design layout, which is not wanted in some cases. In large die lay out, where there is limited space to place marks, the traditional dose control method can become even more limited. Moreover, the traditional method using limited data point is due to limited CD-SEM tool throughput. Weak point (WP) patterns are typically 2D patterns in critical BEOL layers. To measure just a single WP, metrology noise is normally high. Thus, to reduce the metrology noise, to measure more 2D weak point patterns and make an average are preferred for dose control. This requires massive amount of measurement. A high throughput metrology SEM tool to make an averaging to reduce noise is thus required. To address the problems, we have developed a method to use yield limiting device patterns to directly control dose thus improve CDU. To reduce the metrology noise of 2D patterns, a lot weak points per die have been selected which can well cover the full die. A high speed eBeam metrology tool, EP5, is used to measure all these identified weak points. To make this method to work effectively, a CDU budget breakdown (BB) has analyzed to identify and quantify CDU contributor [4]-[
In this paper, according to the problems encountered in the research and development of the new generation product of 28HK project of our company, the problems existing in the ILD CMP measurement of the product were i...
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With the rapid development of semiconductor in China, the localization of semiconductor materials has become a long-term development trend. The main consumables of chemical mechanical planarization (CMP) are pad and s...
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