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Symposium on VLSI technology

作者： J. Tsai J. Hsu J. Shieh S. Jang M. Liang Advanced Module Technology Division Research and Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

We demonstrate a near-field scanned microwave probe and specific test keys for direct non-contact electrical measurement of low-k dielectric constant and damage after deposition, during trench/via processing, and after metallization. This work successfully defines the dielectric constant and the thickness of the damaged layer in patterned low-k films, and is the first demonstration of a metrology for electrical in-line measurements of low-k damage. Furthermore, we point out the integration issue of porous low-k by using this novel technique

关键词： Microwave measurements Electric variables measurement Probes Testing Dielectric measurements Dielectric constant Monitoring Resonant frequency Capacitors Capacitance

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Field-emission triode of low-temperature synthesized ZnO nanowires

Field-emission triode of low-temperature synthesized ZnO nan...

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作者： Lee, Chia Ying Li, Seu Yi Lin, Pang Tseng, Tseung-Yuen IEEE Department of Electronics Engineering Institute of Electronics National Chiao Tung University Hsinchu 30050 Taiwan Institute of Materials Science and Engineering National Chiao Tung University Hsinchu 30049 Taiwan Department of Development for Manufacturing Advanced Module Technology Division Taiwan Semiconductor Manufacturing Division Hsinchu Taiwan Department of Electronics Engineering Institute of Electronics Department of Materials and Mineral Resources Engineering College of Engineering National Taipei University of Technology Taipei Taiwan

A field-emission triode based on the low-temperature (75°C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO2) insulator was fabricated for the controllable field-emission device application. Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm2) of 1.6 and 2.1 V/μm, respectively, with a field enhancement factor β of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure. © 2006 IEEE.

关键词： Triodes

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A methodology to reduce the wafer to wafer thickness variation in Chemical Mechanical Planarization (CMP)

A methodology to reduce the wafer to wafer thickness variati...

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2005 World Tribology Congress III

作者： Wang, Sim Kit Butler, David Lee Division of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University Singapore Singapore CMP/Advanced Module Development Department of Technology Development Chartered Semiconductor Manufacturing Ltd. Singapore Singapore

ISBN: (纸本)0791842029

The requirement to consistently achieve the specific target mean film thickness within a tight tolerance (± 80nm) in the IC fabrication process flow is a great challenge. In general, except process time, all other process parameters such as applied pressure, both carrier and platen velocity, slurry flow rate and pad conditioning duration are kept constant in a typical process recipe so as to reduce the source of variations. This paper describes a methodology that can be implemented with or without the end point detection system to predict the optimal process time for CMP based on the hypothesis of contact mechanics. It captures the variation of incoming wafer thickness, material removal rate and erratic behavior of the process. It cal also serve as a comprehensive framework for better recipe development. Experimental work shows that this approach demonstrates promising results in reducing the target mean film thickness variation and works well with different layers and devices. Copyright © 2005 by ASME.

关键词： Tribology

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Reliability and conduction mechanism study on organic ultra low-k (k=2.2) for 65/45 nm hybrid Cu damascene technology

Reliability and conduction mechanism study on organic ultra ...

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IEEE International Conference on Interconnect technology

作者： Y.N. Su J.H. Shieh B.C. Perng S.M. Jang M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

We have developed an integrated approach for Cu/hybrid low k interconnects. Implementation of this method to 65/45 nm dual damascene was performed using a hybrid film stack consisting of porous SiLK (p-SiLK, k=2.2) and CVD SiOC (k=3.0). The damage to p-SiLK in plasma clean is prevented by pore sealing and an effective k value as low as 2.6 was extracted from the bias temperature stress (BTS) experiments. From BTS, it is found that Frenkel-Poole (FP) emission dominates the leakage mechanism in p-SiLK. The proposed hybrid approach demonstrates /spl sim/21% reduction in RC product and shows excellent electrical and reliability (EM and SM) performance comparable to the conventional Cu/SiOC (k=3.0) damascene.

关键词： Etching Plasma applications Plasma temperature Dielectrics Rough surfaces Surface roughness Surface cleaning Plasma measurements Testing Semiconductor device manufacture

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Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

Supercritical CO/sub 2/ clean with novel solution for 65 nm ...

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IEEE International Conference on Interconnect technology

作者： W.H. Tseng C.M. Yang W.J. Wu C.Y. Wang J.C. Hu C.H. Hsiung Y.L. Lin T.I. Bao J.L. Yang J.H. Shieh C.C. Jeng J.C. Lin I.L. Huang H.C. Chen H. Lo J. Wang C.H. Yu M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

Supercritical CO/sub 2/ (SCCO/sub 2/) clean/modification performance on a 300 mm tool with promising physical, electrical and reliability results for 65 nm low k dual damascene is successfully demonstrated in this work. The process is optimized to remove post-ash residues and modify the dielectric film damaged by O/sub 2/ plasma ash. The low-k value dielectric (LKD) surface is modified from hydrophilic to hydrophobic by the SCCO/sub 2/ treatment. Dielectric constant measurements before and after treatment show effective modification only on porous CVD LKD films. Leakage performance with 55% reduction and capacitance performance with 11% reduction by the process with respect to the conventional process demonstrate the benefits. The process is compatible with the 8 layer scheme. Promising electro-migration (EM), stress migration (SM) performance and better time-dependent dielectric breakdown (TDDB) results indicate that the process is more robust than the conventional one for future interconnects. For 65 nm generation and beyond, SCCO/sub 2/, clean/modification is demonstrated as a promising solution for Cu/low k integration.

关键词： Plasma measurements Dielectric films Ash Surface treatment Dielectric constant Dielectric measurements Capacitance Stress Samarium Dielectric breakdown

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Effect of ash process on leakage mechanism of Cu/ELK (k=2.5) interconnect for 65/45 nm generation

Effect of ash process on leakage mechanism of Cu/ELK (k=2.5)...

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IEEE International Conference on Interconnect technology

作者： J.S. Tsai Y.N. Su J.W. Hsu J.L. Yang J.H. Shieh S.M. Jang M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.

关键词： Ash Dielectric breakdown Plasma measurements Dielectric materials Organic materials Plasma applications Plasma materials processing Etching Dielectric measurements Time measurement

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Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects

Using a low-k material with k=2.5 formed by a novel quasi-po...

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IEEE International Conference on Interconnect technology

作者： C.C. Ko C.H. Lin L.P. Li K.C. Lin Y.C. Lu S.M. Jeng C.H. Yu M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.

关键词： Curing Semiconductor materials Mechanical factors Chemistry Etching Density measurement Mechanical variables measurement Size measurement Semiconductor device manufacture Manufacturing industries

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Edge effects characterization of phase shift mask

Edge effects characterization of phase shift mask

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作者： Chua, Gek Soon Tay, Cho Jui Quan, Chenggen Lin, Qunying Department of Mechanical Engineering National University of Singapore 10 Kent Ridge Crescent Singapore 119260 Singapore Advanced Module Technology Development Mask Technology Chartered Semiconductor Manufacturing Ltd. 60 Woodlands Indust. Pk. D Street 2 Singapore 738406 Singapore

The demand for steadily decreasing dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. The use of phase shift masks (PSMs) is among such resolution enhancement techniques. PSM are well known to show prominent diffraction effects, which cannot be described by the assumption of an infinitely thin mask (Kirchhoff approach) that is used in many commercial photolithography simulators. A correct prediction of sidelobe printability, process window and linearity of an OPC mask requires a rigorous application of diffraction theory. Optical lithography simulation employing a time-domain finite-difference (TDFD) algorithm (TEMPEST) has been used effectively to study the problem of aerial image intensity imbalance through focus with alternating phase shift masks (altPSMs). Using Geometrical Theory of Diffraction (GTD), and the solutions to canonical problems, we obtained a relationship between mask edge and disturbance in an image space. The main objective to develop useful formulations that can be readily applied to diffraction in mask technology. Rigorous analysis of diffraction effect on altPSMs using the GTD approach is discussed and results show that the effect of shifter edge angle is equivalent to that of shifter width. © 2005 American Vacuum Society.

关键词： Phase shift

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Edge effects characterization of phase shift mask

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2005年第2期23卷 417-424页

作者： Gek Soon Chua Cho Jui Tay Chenggen Quan Qunying Lin Department of Mechanical Engineering National University of Singapore 10 Kent Ridge Crescent Singapore 119260 Singapore Advanced Module Technology Development Mask Technology Chartered Semiconductor Manufacturing Ltd. 60 Woodlands Industrial Park D Street 2 Singapore 738406 Singapore

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Investigation of plasma-induced damage of nickel mono-silicide in semiconductor manufacturing

Investigation of plasma-induced damage of nickel mono-silici...

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11th International Symposium on the Physical and Failure Analysis of Integrated Circuits

作者： Hsu, PF Tsai, MH Perng, BC Shieh, JH Tao, HJ Liang, MS Advanced Module Technology Division Research and Development Taiwan Semiconduct. Mfg. Co. Ltd. Taiwan

ISBN: (纸本)0780384547

In this paper, we studied the plasma-induced damage of a nickel mono-siticide (NiSi) using XPS, TEM, AES and SIMS. According to the previous experience, it suggests that NiSi is easily oxidized when O-2 exists in plasma, which results in a high sheet resistance of oxide/silicide (NiSiOx mixture. A substrate-dependent oxidation of NiSi formed on the different dose-implanted silicon or poly-silicon substrate was also investigated in this study.

关键词： Nickel compounds

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