检索结果-内蒙古大学图书馆

作者： Lee, Chia Ying Li, Seu Yi Lin, Pang Tseng, Tseung-Yuen IEEE Department of Electronics Engineering Institute of Electronics National Chiao Tung University Hsinchu 30050 Taiwan Institute of Materials Science and Engineering National Chiao Tung University Hsinchu 30049 Taiwan Department of Development for Manufacturing Advanced Module Technology Division Taiwan Semiconductor Manufacturing Division Hsinchu Taiwan Department of Electronics Engineering Institute of Electronics Department of Materials and Mineral Resources Engineering College of Engineering National Taipei University of Technology Taipei Taiwan

A field-emission triode based on the low-temperature (75°C) and hydrothermally synthesized single-crystalline zinc-oxide nanowires (ZnO NWs) grown on Si substrate with a silicon dioxide (SiO2) insulator was fabricated for the controllable field-emission device application. Field-emission measurement reveals that the ZnO NWs fabricated on the Si substrate exhibit a good emission property with the turn-on electric field and threshold electric field (current density of 1 mA/cm2) of 1.6 and 2.1 V/μm, respectively, with a field enhancement factor β of 3340. The field-emission properties of the ZnO NW-based triode exhibit the controllable characteristics. The well-controlled field-emission characteristics can be divided into three parts: gate leakage region, linear region, and saturation region. Therefore, this study provides a low-temperature field-emission triode fabrication process that is compatible with the Si-based microelectronic integration, and the field-emission measurements also reveal that the emission behavior can be well controlled by adopting the triode structure. © 2006 IEEE.

关键词： Triodes

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A suggestion for high power LED package based on LTCC

A suggestion for high power LED package based on LTCC

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IEEE 56th Electronic Components and technology Conference

作者： Park, Jung Kyu Shin, Hyun Dong Park, Young Sam Park, Sung Yeol Hong, Ki Pyo Kim, Byung Man Lighting Module Team Opto System Division Samsung Electro-Mechanics 314 Maetan3-dong Suwon Gyunggi-do 443-743 Korea Republic of Dept. of Mech. Eng. Korea Advanced Institute of Science and Technology 373-1 Kuseong-dong Yuseong-gu Daejeon 305-701 Korea Republic of

ISBN: (纸本)1424401526

A high power package based on LTCC, Multi Layer Ceramic-Metal Package, MLCMP, has been proposed. To comply with recent demands for high power LEDs, the proposed package utilized large scale via slug for heat sink slug whose cross section area is greater than ordinary LED die size. The via slug could be constructed in a single firing process. The matching quality at the ceramic-metal interface was acceptable for reliable LED package and thermal conductivity of the sintered silver was assumed to be nearly equivalent to bulk silver. Thus, the proposed MLCMP is equivalent to existing heat sink slug type packages, where the chip is located on the metal heat sink slug and heat is efficiently transmitted to circuit board by the aid of the heat sink slug. Thermal resistance of MLCMP was evaluated numerically and experimentally. In the numerical simulation, MLCMP was compared with conventional heat slug type package and Aluminum Nitride based package. Thermal resistance of all the three packages is less than 10 K/W. As the cross section of the via slug increases, thermal resistance of MLCMP exceeds those of the two other packages. A transient thermal analyzer was used to measure actual thermal resistance of working MLCMP. The measured data were compared with analytic solutions. Thermal resistance contributed to MLCMP has been revealed to be less than 1.0 K/W. Considering the affordability and design flexibility, we anticipate the proposed MLCMP is not only suitable for high power LED package but also a promising solution for illumination modules. © 2006 IEEE.

关键词： Electronics packaging

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A suggestion for high power LED package based on LTCC

A suggestion for high power LED package based on LTCC

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Electronic Components and technology Conference (ECTC)

作者： Jung Kyu Park Hyun Dong Shin Young Sam Park Sung Yeol Park Ki Pyo Hong Byung Man Kim Lighting Module Team Opto System Division Samsung Electro Mechanics Company Limited Suwon Gyeonggi South Korea Department of Mechanical Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea

A high power package based on LTCC, multi layer ceramic-metal package, MLCMP, has been proposed. To comply with recent demands for high power LEDs, the proposed package utilized large scale via slug for heat sink slug whose cross section area is greater than ordinary LED die size. The via slug could be constructed in a single tiring process. The matching quality at the ceramic-metal interface was acceptable for reliable LED package and thermal conductivity of the sintered silver was assumed to be nearly equivalent to bulk silver. Thus, the proposed MLCMP is equivalent to existing heat sink slug type packages, where the chip is located on the metal heat sink slug and heat is efficiently transmitted to circuit board by the aid of the heat sink slug. Thermal resistance of MLCMP was evaluated numerically and experimentally. In the numerical simulation, MLCMP was compared with conventional heat slug type package and aluminum nitride based package. Thermal resistance of all the three packages is less than 10 K/W. As the cross section of the via slug increases, thermal resistance of MLCMP exceeds those of the two other packages. A transient thermal analyzer was used to measure actual thermal resistance of working MLCMP. The measured data were compared with analytic solutions. Thermal resistance contributed to MLCMP has been revealed to be less than 1.0 K/W. Considering the affordability and design flexibility, we anticipate the proposed MLCMP is not only suitable for high power LED package but also a promising solution for illumination modules

关键词： Light emitting diodes Packaging Thermal resistance Heat sinks Thermal conductivity Silver Transient analysis Electrical resistance measurement Large-scale systems Printed circuits

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Damage-Free Low-k Treatment Verified by a Novel Microwave Measurement

Damage-Free Low-k Treatment Verified by a Novel Microwave Me...

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IEEE International Conference on Interconnect technology

作者： J.S. Tsai M.C. Liang T.L. Lee L.C. Chen J.H. Shieh J.J. Lee R.L. Hwang S.M. Jang M.S. Liang Advanced Module Technology Division R&D Taiwan Semiconductor Manufacturing Company Ltd. Hsinchu Taiwan R.O.C. Failure Analysis Division Taiwan Semiconductor Manufacturing Company Limited Failure Analysis Division Taiwan Semiconductor Manufacturing Company Ltd. '~ailure Analysis Division Taiwan Semiconductor Manufacturing Company Ltd.

We demonstrate that after a fine-tuned ashing process the damage behavior of extra low-k material (ELK, k=2.5) is continued at the surface and the thickness of the damaged layer can be kept under control. Therefore, damaged-free treatment can be achieved by process optimization. Finally, we prove the effectiveness of this treatment by using a novel near-field scanned microwave probe to perform microwave capacitance measurements on a well-designed test vehicle. It is the first implementation of this methodology to monitor low-k damage in patterned low-k structures

关键词： Microwave measurements Ash Dielectric measurements Probes Dielectric constant Optical surface waves Discrete Fourier transforms Optical films Semiconductor device manufacture Surface treatment

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Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

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Physica Status Solidi (C) Current Topics in Solid State Physics 2006年第6期3卷 2169-2173页

作者： Lee, Jae-Hoon Oh, Jeong-Tak Park, Jin-Sub Kim, Je-Won Kim, Yong-Chun Lee, Jeong-Wook Cho, Hyung-Koun Lighting Module R and D Group OS Division Samsung Electro-Mechanics Co. Ltd Suwon 442-743 Korea Republic of Photonics Laboratory Samsung Advanced Institute of Technology Suwon 440-600 Korea Republic of Sung Kyun Kwan University Materials Science and Engineering Suwon 440-746 Korea Republic of

To improve the external quantum efficiency, high quality GaN film was grown on hemispherical patterned sapphire by controlling the V/III ratio during the initial growth stage. The luminous intensity of white flash light emitting diode (LED) grown on hemispherical patterned sapphire (HPS) was estinated to be 5.8 cd at a forward current of 150 mA, which is improved by 20% more than that of LED grown on conventional sapphire substrate. The improvement of luminous intensity was explained by considering not only an increase of the extraction efficiency via the suppressed total internal reflection at the corrugated interface but also a decrease of dislocation density. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Efficiency

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Porous low-k dielectric films extraction and restoration with supercritical CO2 technology for 65nm and beyond applications

Porous low-k dielectric films extraction and restoration wit...

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22nd International VLSI Multilevel Interconnection Conference, VMIC 2005

作者： Wu, W.J. Wang, C.Y. Hu, J.C. Chiou, W.C. Wang, J. Yu, C.H. Liang, M.S. Advanced Module Technology Division R and D Taiwan Semiconductor Manufacturing Company Ltd. 8 Li-Hsin Rd. 6 Hsin-Chu 300-77 Taiwan

Supercritical CO2 (SCCO2) extraction and restoration treatment for damaged porous low k materials in 65 nm technology node is demonstrated in this work. This study investigates the bulk and electrical performance of 300mm wafer after SCCO2 treatment. The electrical results show more than 50% of leakage current improvement for both extraction and restoration and 15% of RC delay improvement for restoration.

关键词： Restoration

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Integration of Cu and extra low-k dielectric (k=2.5/spl sim/2.2) for 65/45/32nm generations

Integration of Cu and extra low-k dielectric (k=2.5/spl sim/...

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International Electron Devices Meeting (IEDM)

作者： Y.N. Su J.H. Shieh J.S. Tsai C.Y. Ting C.H. Lin C.L. Chou J.W. Hsu S.M. Jang M.S. Liang Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

This paper investigated various approaches to integrate Cu and extra low-k dielectric (ELK, k=2.5~2.2) for dual damascene fabrication. We demonstrate a trench-first hard mask process flow without k degradation by ash-free process and a novel pore sealing technique. In addition, we have extended this pore sealing concept to a via-first PR mask approach for porous ELK of 2.2. Both optimized hard mask and PR mask process flows are demonstrated promising for Cu/ELK integration for 65/45/32nm generations

关键词： Dielectrics Ash Resists Plasma applications Degradation Curing Etching Silicon carbide Electric breakdown Plasma density

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A methodology to reduce the wafer to wafer thickness variation in Chemical Mechanical Planarization (CMP)

A methodology to reduce the wafer to wafer thickness variati...

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2005 World Tribology Congress III

作者： Wang, Sim Kit Butler, David Lee Division of Manufacturing Engineering School of Mechanical and Aerospace Engineering Nanyang Technological University Singapore Singapore CMP/Advanced Module Development Department of Technology Development Chartered Semiconductor Manufacturing Ltd. Singapore Singapore

ISBN: (纸本)0791842029

The requirement to consistently achieve the specific target mean film thickness within a tight tolerance (± 80nm) in the IC fabrication process flow is a great challenge. In general, except process time, all other process parameters such as applied pressure, both carrier and platen velocity, slurry flow rate and pad conditioning duration are kept constant in a typical process recipe so as to reduce the source of variations. This paper describes a methodology that can be implemented with or without the end point detection system to predict the optimal process time for CMP based on the hypothesis of contact mechanics. It captures the variation of incoming wafer thickness, material removal rate and erratic behavior of the process. It cal also serve as a comprehensive framework for better recipe development. Experimental work shows that this approach demonstrates promising results in reducing the target mean film thickness variation and works well with different layers and devices. Copyright © 2005 by ASME.

关键词： Tribology

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Reliability and conduction mechanism study on organic ultra low-k (k=2.2) for 65/45 nm hybrid Cu damascene technology

Reliability and conduction mechanism study on organic ultra ...

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IEEE International Conference on Interconnect technology

作者： Y.N. Su J.H. Shieh B.C. Perng S.M. Jang M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

We have developed an integrated approach for Cu/hybrid low k interconnects. Implementation of this method to 65/45 nm dual damascene was performed using a hybrid film stack consisting of porous SiLK (p-SiLK, k=2.2) and CVD SiOC (k=3.0). The damage to p-SiLK in plasma clean is prevented by pore sealing and an effective k value as low as 2.6 was extracted from the bias temperature stress (BTS) experiments. From BTS, it is found that Frenkel-Poole (FP) emission dominates the leakage mechanism in p-SiLK. The proposed hybrid approach demonstrates /spl sim/21% reduction in RC product and shows excellent electrical and reliability (EM and SM) performance comparable to the conventional Cu/SiOC (k=3.0) damascene.

关键词： Etching Plasma applications Plasma temperature Dielectrics Rough surfaces Surface roughness Surface cleaning Plasma measurements Testing Semiconductor device manufacture

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Effect of ash process on leakage mechanism of Cu/ELK (k=2.5) interconnect for 65/45 nm generation

Effect of ash process on leakage mechanism of Cu/ELK (k=2.5)...

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IEEE International Conference on Interconnect technology

作者： J.S. Tsai Y.N. Su J.W. Hsu J.L. Yang J.H. Shieh S.M. Jang M.S. Liang Advanced Module Technology Division Research & Development Taiwan Semiconductor Manufacturing Company Limited Hsinchu Taiwan

This work investigates the leakage and breakdown mechanisms in a Cu damascene structure with carbon-doped CVD extra low-k material (ELK, k=2.5) as intermetal dielectric. The effects of ash processing by inductively coupled plasma (ICP) and reactive ion etching (RIE) modes were extensively characterized. Due to the dominance of Frenkel-Poole (FP) emission in the leakage mechanism between Cu lines, we extracted for the first time the effective k through leakage measurements under various ash conditions. We demonstrate that RIE ash is promising to reduce leakage current, to improve dielectric breakdown, and to retain effective k for Cu/ELK applications. Finally, the mechanisms of ELK damages by ICP and RIE ash are explained.

关键词： Ash Dielectric breakdown Plasma measurements Dielectric materials Organic materials Plasma applications Plasma materials processing Etching Dielectric measurements Time measurement

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