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A Spiral Graphene Framework Containing Highly Ordered Graphene Microtubes for Polymer Composites with Superior Through-Plane Thermal Conductivity

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Chinese Journal of Chemistry 2022年第3期40卷 329-336页

作者： Jinrui Gong Xue Tan Qilong Yuan Zhiduo Liu Junfeng Ying Le Lv Qingwei Yan Wubo Chu Chen Xue Jinhong Yu Kazuhito Nishimura Nan Jiang Cheng-Te Lin Wen Dai Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingbo Institute of Materials Technology and Engineering(NIMTE)Chinese Academy of SciencesNingboZhejiang 315201China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBejjing 100049China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)Beijing Key Lab of Nonophotonics&Ultrafine Optoelectronic SystemsSchool of PhysicsBeijing Institute of TechnologyBeijing 100081China College of Materials Science and Engineering Hunan UniversityChangshaHunan 410082China Advanced Nano-processing Engineering Lob Mechanical Systems EngineeringKogakuin UniversityTokyo 192-0015Japan

As the power density of electronic devices increases,there has been an urgent demand to develop highly conductive polymer composites to address the accompanying thermal management *** to the ultra-high intrinsic thermal conductivity,graphene is considered a very promising filler to improve the thermal conductivity of ***,graphene-based polymer composites prepared by the conventional mixing method generally have limited thermal conductivity,even under high graphene loading,due to the failure to construct efficient heat transfer pathways in the polymer ***,a spiral graphene framework(SGF)containing continuous and highly ordered graphene microtubes was developed based on a modified CVD *** embedding into the epoxy(EP)matrix,the graphene microtubes can act as efficient heat pathways,endowing the SGF/EP composites with a high through-plane thermal conductivity of 1.35 W·m^(-1)·K^(-1) at an ultralow graphene loading of 0.86 wt%.This result gives a thermal conductivity enhancement per 1 wt%filler loading of 710%,significantly outperforming various graphene structures as *** addition,we demonstrated the practical application of the SGF/EP composite as a thermal interface material for efficient thermal man-agement of the light-emitting diode(LED).

关键词： Graphene Chemical vapor deposition Polymer Thermal conductivity Thermal management material

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Ultralow Interfacial Thermal Resistance of Graphene Thermal Interface Materials with Surface Metal Liquefaction

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nano-Micro Letters 2023年第1期15卷 183-196页

作者： Wen Dai Xing-Jie Ren Qingwei Yan Shengding Wang Mingyang Yang Le Lv Junfeng Ying Lu Chen Peidi Tao Liwen Sun Chen Xue Jinhong Yu Chengyi Song Kazuhito Nishimura Nan Jiang Cheng-Te Lin Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingbo Institute of Materials Technology and Engineering(NIMTE)Chinese Academy of SciencesNingbo 315201People’s Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049People’s Republic of China Institute of Advanced Technology Shandong UniversityJinan 250100People’s Republic of China Ningbo Institute of Materials Technology and Engineering(NIMTE) Chinese Academy of SciencesNingbo 315201People’s Republic of China The State Key Laboratory of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao Tong University800 Dong Chuan RoadShanghai 200240People’s Republic of China Advanced Nano-Processing Engineering Lab Mechanical Systems EngineeringKogakuin UniversityTokyo 192-0015Japan

Developing advanced thermal interface materials(TIMs)to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor *** on the ultra-high basal-plane thermal conductivity,graphene is an ideal candidate for preparing high-performance TIMs,preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of ***,the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from *** addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved,another critical factor is the limited actual contact area leading to relatively high contact thermal resistance(20-30 K mm^(2) W^(−1))of the“solid-solid”mating interface formed by the vertical graphene and the rough chip/heat *** solve this common problem faced by vertically aligned graphene,in this work,we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower *** on rational graphene orientation regulation in the middle tier,the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m^(−1) K^(−1).Additionally,we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a“liquid-solid”mating interface,significantly increasing the effective heat transfer area and giving a low contact thermal con-ductivity of 4-6 K mm^(2) W^(−1) under packaging *** finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management.

关键词： Vertically aligned graphene Liquid metal Surface modification Thermal interface materials

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Enhancement of in-plane thermal conductivity of flexible boron nitride heat spreaders by micro/nanovoid filling using deformable liquid metal nanoparticles

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Rare Metals 2023年第11期42卷 3662-3672页

作者： Pei-Di Tao Shao-Gang Wang Lu Chen Jun-Feng Ying Le Lv Li-Wen Sun Wu-Bo Chu Kazuhito Nishimura Li Fu Yue-Zhong Wang Jin-Hong Yu Nan Jiang Wen Dai Yao-Kang Lv Cheng-Te Lin Qing-Wei Yan College of Chemical Engineering Zhejiang University of TechnologyHangzhou310058China Qianwan Institute Ningbo Institute of Materials Technology and Engineering(NIMTE)Chinese Academy of SciencesNingbo315201China Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingboInstitute of Materials Technology and Engineering(NIMTE)Chinese Academy of SciencesNingbo315201China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang110016China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing100049China Advanced Nano-Processing Engineering Lab Mechanical Systems EngineeringKogakuin UniversityTokyo192-0015Japan College of Materials and Environmental Engineering Hangzhou Dianzi UniversityHangzhou310018China

With the fast development of integrated circuit devices as well as batteries with high energy densities,the thermal management of electronic components is becoming increasingly crucial to maintaining their reliable *** nitride nanosheets(BNNS),which have superhigh thermal conductivity along the in-plane direction while remaining electrically insulating,were widely regarded as an ideal filler for preparing high-performance polymer composites to address the‘‘thermal failure''***,due to the instinctive rigidity of BNNS,the nanosheets are unable to form a tightly interfacial contact between the adjoining fillers,resulting in some micro-and nanovoids within the heat transfer pathways and severely limiting further thermal conductivity enhancement for BNNS-based ***,soft and deformable liquid metal(eutectic gallium-indium,EGaIn)nanoparticles were employed to fill the gaps between the adjacent BNNS with a rational design of mass ratios of BNNS and EGaIn,leading to a strongly synergistic effect with BNNS on thermal conductivity *** a result,the composite film(BNNS:63 wt%and EGaIn:7 wt%)employing cellulose nanofibers(CNF:30 wt%)as the polymer matrix achieves superhigh thermal conductivity along the in-plane direction of up to(90.51±6.71)W·m^(-1)·K^(-1),showing the highest value among the BNNSbased composites with a bi-filler system as far as we ***,the film can work as a heat spreader for the heat dissipation of high-power light emitting diodes,outperforming tin foil in cooling efficiency.

关键词： Boron nitride nanosheet Liquid metal Eutectic gallium-indium In-plane thermal conductivity Heat spreader

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Quantitatively investigating the self-attraction of nanowires

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纳米研究（英文版） 2022年第4期15卷 3729-3736页

作者： Junfeng Cui Zhenyu Zhang Le Lv Kazuhito Nishimura Guoxin Chen Nan Jiang Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education Dalian University of TechnologyDalian 116024China Key Laboratory of Marine Materials and Related Technoloies Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education Dalian University of TechnologyDalian 116024China Key Laboratory of Marine Materials and Related Technoloies Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Advanced Nano-Processing Engineering Lab Mechanical EngineeringKogakuin UniversityTokyo 192-0015Japan

The self-attraction of nanowires(NWs)would lead to NWs bunching up together when fabricated in high density and the short circuit of NW-based devices during ***,the underlying mechanism of the self-attraction of NWs remains debatable due to the lack of in situ characterization of the *** this study,a versatile method of in situ investigating the self-attraction of NWs was *** attractive force between two NWs and their distance can be determined quantitatively in the process of attraction under an optical microscope,eliminating the influence of electron beam in electron *** this approach,the self-attraction of SiC NWs was investigated and a two-stage mechanism for the self-attraction was *** electrostatic force between two individual SiC NWs increased as their distance decreased,and acted as the initial driving force for the attraction of *** NWs remained in contact under van der Waals force until they separated when external force exceeded van der Waals *** charge density and the Hamaker constant of SiC NWs were determined to be 1.9×10-4 C·m-2 and 1.56×10-19 J,which played an important role in the attraction of *** results shed light on the mechanism of self-attraction among NWs and provide new insights into fabricating high-quality NWs and developing high-performance NW-based devices.

关键词： self-attraction nanowires in situ electrostatic force van der Waals force

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Dealloying-constructed hierarchical nanoporous bismuth-antimony anode for potassium ion batteries

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Fundamental Research 2021年第4期1卷 408-417页

作者： Hui Gao Kuibo Yin Zhiyuan Guo Ying Zhang Wensheng Ma Wanfeng Yang Ke Sun Zhangquan Peng Zhonghua Zhang Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials(Ministry of Education) School of Materials Science and EngineeringShandong UniversityJingshi Road 17923Jinan 250061China SEU-FEI Nano-Pico Center Key Lab of MEMS of Ministry of EducationSoutheast UniversityNanjing 210096China Laboratory of Advanced Spectro-electrochemistry and Li-ion Batteries Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China

Bi-Sb alloys are appealing anode materials for potassium ion batteries(PIBs)but challenged by their enormous volumetric variation during ***,a facile one-step dealloying protocol was devised and utilized to prepare the Bi-Sb alloys that manifest an exotic bicontinuous hierarchical nanoporous(np)microstructure ideal for volume-change mitigation and K+transport *** growth mechanism fostering the peculiar morphology of the np-(Bi,Sb)alloys was investigated and clarified via operando X-ray(XRD)and ex-situ scanning electron microscopy(SEM).In particular,the np-Bi6Sb2 electrode,optimized for comprehensive electrochemical performance,achieves decent reversible capacities and a superior lifespan,as benchmarked with the monometallic references and other Bi-Sb alloy ***(de)potassiation mechanism of the np-(Bi,Sb)alloys was studied by operando XRD and further rationalized by density functional theory(DFT)calculations,whereby a homogeneous(segregation-free)and robust two-step electrochemically-driven phase transformations’catenation of(Bi,Sb)↔K(Bi,Sb)2↔K3(Bi,Sb)was reliably established to substantiate the outstanding reversibility of the np-(Bi,Sb)anodes in PIBs.

关键词： Potassium ion battery Bismuth-antimony anodes Density functional theory Dealloying Operando X-ray diffraction

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Recent progress in perovskite solar cells:from device to commercialization

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Science China Chemistry 2022年第12期65卷 2369-2416页

作者： Xinhui Luo Xuesong Lin Feng Gao Yang Zhao Xiaodong Li Liqing Zhan Zexiong Qiu Jin Wang Cong Chen Lei Meng Xiaofeng Gao Yu Zhang Zijian Huang Rundong Fan Huifen Liu Yanrun Chen Xiaoxue Ren Jiahong Tang Chun-Hao Chen Dong Yang Yongguang Tu Xiao Liu Dongxue Liu Qing Zhao Jingbi You Junfeng Fang Yongzhen Wu Hongwei Han Xiaodan Zhang Dewei Zhao Fuzhi Huang Huanping Zhou Yongbo Yuan Qi Chen Zhaokui Wang Shengzhong(Frank)Liu Rui Zhu Jotaro Nakazaki Yongfang Li Liyuan Han State Key Laboratory of Metal Matrix Composites School of Material Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240China State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Physics and Electronic Science Engineering Research Center of Nanophotonics&Advanced InstrumentMinistry of EducationEast China Normal UniversityShanghai 200241China Key Laboratory for Advanced Materials and Institute of Fine Chemicals School of Chemistry and Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Institute of Photoelectronic Thin Film Devices and Technology Renewable Energy Conversion and Storage CenterSolar Energy Research CenterNankai UniversityTianjin 300350China College of Materials Science and Engineering&Engineering Research Center of Alternative Energy Materials&Devices Ministry of EducationSichuan UniversityChengdu 610065China Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials Key Laboratory of Polymer Chemistry and Physics of Ministry of EducationSchool of Materials Science and EngineeringPeking UniversityBeijing 100871China School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China Experimental Center for Advanced Materials School of Materials Science and EngineeringBeijing Institute of TechnologyBeijing 100081China Jia

Perovskite solar cells(PSCs) are undergoing rapid development and the power conversion efficiency reaches 25.7% which attracts increasing attention on their commercialization *** this review,we summarized the recent progress of PSCs based on device structures,perovskite-based tandem cells,large-area modules,stability,applications and ***,the challenges and perspectives are discussed,aiming at providing a thrust for the commercialization of PSCs in the near future.

关键词： perovskite solar cells device engineering stability application

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Boosting the High Gas Sensing Performance Via Laser Embedding Schottky Heterointerfaces at Particle Boundaries in Sno2 nanofibers

SSRN

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SSRN 2023年

作者： Ma, Zhuangzhuang Zhang, Xiuhai Xiao, Changlin Gao, Xiaotong Wang, Hongqiang Jia, Lichao Key Laboratory of Applied Surface and Colloid Chemistry National Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University 620 West Chang’an Street Shaanxi Xi’an710119 China State Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Shaanxi Joint Labortary of Graphene Xi’an710072 China

Metal oxide semiconductor-based gas sensors often require noble metals for modification to enhance the carrier mobility of the material. However, current noble metal modifications are almost always performed at the material surface, making it difficult to apply them to the particle boundaries (PBs) of the material, which can greatly reduce the utilization of noble metals. We herein synthesized Pt nanocrystals (NCs) with average size of 1 nm by the technology of pulsed laser irradiation, followed by in situ embedded at the PBs of SnO2 nanofibers to address the unwanted carrier loss at PBs for substantially improved gas sensing. The Pt NCs/SnO2 exhibited 2.23-fold enhancement of response values, and 2.86-fold improvement on selectivity for NO2 at 50oC, comparing to these samples without PBs engineering. Further analysis showed that the enhancement of the gas-sensitive performance is mainly due to the electronic and chemical sensitization of Pt NCs at the SnO2 PBs and the high utilization of Pt NCs leading to a significant increase in the carrier mobility of the material. We thus believe present work provides an efficient alternative for developing high performance gas sensing based on materials with intrinsic particle boundaries. © 2023, The Authors. All rights reserved.

关键词： Pulsed lasers

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells

Investigation of transparent conducting oxide/Si junction fo...

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2010 35th IEEE Photovoltaic Specialists Conference

作者： Jin-Seob Song Jung-Yup Yang Jun-Seok Lee Jin-Pyo Hong Jae-Hwan Ha Power & Industrial Systems Research and Development Center Hyosung Corporation Anyang Gyeonggi South Korea New Functional Materials and Devices Laboratory Department of physics Hanyang University Seoul South Korea Global Research laboratory for Nano devices processing Lab Division of advanced materials science engineering Hanyang University Seoul South Korea

We have investigated properties of ITO/Si with shallow doped emitter for the increasing fill factor of emitter wrap through (EWT) solar cells. The ITO is prepared by DC magnetron sputter on p-type mono-crystalline silicon substrate. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission length method (TLM). As an experimental result, the contact resistance and the series resistance of ITO/Si with shallow doped emitter were obtained 0.0705 Ωcm 2 and 0.1821 Ωcm 2 , respectively. As a result of analysis by the contact resistance for optimization of ITO layer, the fill factor of EWT solar cells expected to increase above 80%.

关键词： Indium tin oxide Silicon Resistance Photovoltaic cells Contact resistance Films Conductivity

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Flexible Zno:Pvdf Based Free Standing Piezoelectric nanogenerator for Vibrational Energy Harvesting and Wearable Shoe Insole Pedometer Sensor

SSRN

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SSRN 2023年

作者： Mahapatra, Abhinav Ajimsha, R.S. Ittoop, M.O. Sharma, Arpit Karmakar, Sanjib Shaikh, Aasiya Sankar, P. Ram Misra, Pankaj Oxide Nano-Electronics Lab Laser Material Processing Division Raja Ramanna Centre for Advanced Technology Indore452013 India Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai400 094 India Materials Engineering Lab Laser Material Processing Division Raja Ramanna Centre for Advanced Technology Indore452013 India Shri G. S. Institute of Technology and Science Indore452 003 India Optical and Dielectric Ceramics Lab Laser and Functional Materials Division Raja Ramanna Centre for Advanced Technology Indore452 013 India Chemical Treatment Laboratory Design and Manufacturing Technology Division Raja Ramanna Centre for Advanced Technology Indore452 013 India

The increasing demand of energy harvesting and wearable electronics applications requires the development of flexible and highly durable piezoelectric nanogenerators (PENG). In this work, We have fabricated flexible ZnO:PVDF based PENGs for vibrational energy harvesting and shoe insole pedometer applications. ZnO nanorods were grown by hydrothermal method and incorporated into PVDF matrixes in the concentration range of 5–15 wt%. These homogeneous ZnO:PVDF composite films were sandwiched between Al electrodes to realize flexible free standing PENGs. The open circuit voltage (Voc), short circuit current (Isc) and instantaneous power density of PENGs increased from ~ 4 V, 0.4 µA and 1.6 µW/cm2 to ~ 14.6 V, 0.6 µA and 21.3 µW/cm2 respectively when ZnO nanorods concentration in PVDF increased from 0 to 10 wt% and decreased with further increase in ZnO nanorods concentration. The enhancement in output characteristics of ZnO:PVDF PENG with increasing ZnO concentration was attributed to β-phase crystallization of PVDF, which was confirmed by XRD and FTIR measurements. The deterioration in output characteristics beyond 10 wt% of ZnO nanorods concentration was explained considering the variation of dielectric constant and remnant polarization. The rectified output of the PENGs was effectively stored in various commercially available capacitors and used to power LEDs and stopwatch displays. The PENG with 10 wt% ZnO concentration was used to develop shoe insole pedometer which was interfaced with android based mobile application via Bluetooth. The shoe insole pedometer was successfully tested for 5000 steps at different walking frequencies ranging from 0.5 Hz to 2 Hz in the speed range of ~ 1.4 km/h to 5.5 km/h. This study not only gives an insight into the mechanism of ZnO:PVDF based PENGs but also opens up their potential in vibration energy harvesting and shoe insole pedometer applications. © 2023, The Authors. All rights reserved.

关键词： Zinc oxide

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