检索结果-内蒙古大学图书馆

research on advanced diesel aftertreatment devices

Review of Automotive Engineering 2006年第3期27卷 395-399页

作者： Hara, Shinji Oyama, Koji Kakegawa, Toshiaki Senbokuya, Shigeo Nakamura, Qsamu Shibuya, Masahiko Itoyama, Hiroyuki Okada, Masanori Sugiyama, Gen Hasegawa, Tsutomu Group No. 5 Engine Component Dept. No. 2 Isuzu Motors Limited 8 Tsuchidana Fujisawa Kanagawa 252-8501 Japan Fuel Products R and D Group Fuel Research Laboratory Research and Development Division 8 Chidoricho Naka-ku Yokohama Kanagawa 231-0815 Japan Technical Liaison Dept. Development Management Division Hino Motors Ltd. 3-1-1 Hino-dai Hino Tokyo 191-8660 Japan Fuel Quality Technology Section Manufacturing Department Idemitsu Kosan Co. Ltd. 1280 Kami-humi Sodegaura Chiba 299-0293 Japan Fuels and Process Division Research Center TonenGeneral Sekiyu K.K. 6-1 Ukishima-cho Kawasaki-ku Kawasaki Kanagawa 210-9526 Japan Oil Products Development Section Research and Development Division Showa Shell Sekiyu K.K. 2-3-2 Daiba Minato-ku Tokyo 135-8074 Japan Components Engineering Group Engine Engineering Department No. 3 Powertrain Engineering Division 6-1 Daikoku-cho Tsurumi-ku Yokohama Kanagawa 230-0053 Japan Quality Audit Department Engine Administration Division Power Train Development Group 1 Toyota-cho Toyota Aicht 471-8572 Japan Engine and Environmental Research Division Japan Automobile Research Institute 2530 Karima Tsukuba Ibaraki 305-0822 Japan Fuel Research Laboratory Advanced Technology and Research Institute Japan Petroleum Energy Center 1-4-10 Ohnodai Midori-ku Chiba Chiba 267-0056 Japan

This article reports the effects of fuel sulfur on advanced diesel emission aftertreatment devices as tested by the JCAPII Diesel WG For a Urea SCR system, the NOx emissions reduction performance was compared at low exhaust gas temperature ranges with and without an oxidation catalyst installed in front of the SCR catalyst. For a NOx storage reduction catalyst system, the effect of fuel sulfur content on exhaust emissions and fuel economy during 50,000km driving was examined. © 2006 Society of Automotive Engineers of Japan, Inc. All rights reserved.

关键词： Urea

来源：评论

学校读者我要写书评

暂无评论

Vibration test and analysis of a 20-kW-class ion engine

Vibration test and analysis of a 20-kW-class ion engine

引用

41st AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit

作者： Snyder, John Steven Sengupta, Anita Beatty, John S. O'Connell, Michael R. Monheiser, Jeff Juhlin, Nils Sullivan, Brian Collins, Michael Jet Propulsion Laboratory California Institute of Technology Pasadena CA 91109 United States Aerojet- General Corporation Redmond WA 98073 United States NovaComp Engineering Inc. Bothell WA 98041 United States Materials Research and Design Inc. Wayne PA 19087 United States Advanced Propulsion Technology Group United States Materials Testing and Contamination Control Group Dynamics Environments Group United States Systems and Technology Development United States

Interest in science objectives at the outer planets, specifically at the moons of Jupiter, has spurred the development of high-power electric propulsion systems under the Prometheus program. As a part of this effort, a J PL-led team has designed, developed, and tested the 20kW-class NEXIS ion engine. This engine is derived from the proven 30-cm NSTAR engine design and incorporates carbon-carbon ion optics technology to achieve long life. Following the successful performance demonstration of a laboratory model thruster, a development Model (DM) thruster was designed and fabricated to meet performance and life objectives as well as to survive dynamic and thermal environments. The DM thruster and ion optics were subjected to random vibration testing at protoflight levels in three axes to validate the design and obtain data for dynamic modeling. The NEXIS DM thruster successfully passed the protoflight random vibration testing. Post-test inspection of the thruster showed no damage to any of the components. Ion optics inspection revealed minor adhesive material loss in non-structural bond joints in a few locations. There were no measurable changes in ion optics grid gap or alignment. Measured thruster natural frequencies were similar to, but not in exact agreement with, the predictions of pre-test modeling results using separate dynamically decoupled models. Post-test modeling efforts are underway and preliminary results have demonstrated the necessity of modeling the thruster and ion optics as an integrated unit. Based on the successful results of vibration testing and performance testing, the NEXIS DM thruster design has been demonstrated to be of flight quality. Copyright © 2005 by the American Institute of Aeronautics and Astronautics, Inc.

关键词： Ions

来源：评论

学校读者我要写书评

暂无评论

BEOL process integration technology for 45 nm node porous low-k/copper interconnects

BEOL process integration technology for 45 nm node porous lo...

引用

IEEE International Conference on Interconnect Technology

作者： N. Matsunaga N. Nakamura K. Higashi H. Yamaguchi T. Watanabe K. Akiyama S. Nakao K. Fujita H. Miyajima S. Omoto A. Sakata T. Katata Y. Kagawa H. Kawashima Y. Enomoto T. Hasegawa H. Shibata Advanced CMOS Technology Dcpartment SoC Research & Development Center Toshiba Corporation Semiconductor Company Japan Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company Japan Semiconductor Technology Development Group Sony Corporation Semiconductor Solutions Network Company Japan

Highly reliable BEOL integration technology with porous low-k (k=2.3) was realized by development focusing on plasma damage control and moisture control. A hybrid dielectric scheme with damage resistant porous low-k films and buffer film was applied in view of its inherent advantages for realizing reliable porous low-k integration. A metallization process was developed from the viewpoint of suppressing morphology and adhesion degradation of barrier metal by oxidation. A dummy wiring pattern was also adopted to remove moisture absorbed in porous low-k films. Stress-migration and electromigration satisfying practical reliability were obtained with via size of 75 nm for the first time by utilizing all possible measures for reducing the damage and the moisture.

关键词： Copper Moisture control Plasmas Dielectrics Metallization Morphology Adhesives Degradation Oxidation Wiring

来源：评论

学校读者我要写书评

暂无评论

RECIDIVISM AMONG AN EARLY COHORT OF CALIFORNIA'S PROPOSITION 36 OFFENDERS

引用

Criminology & Public Policy 2006年第4期3卷

作者： DAVID FARABEE YIH-ING HSER M. DOUGLAS ANGLIN DAVID HUANG David Farabee Ph.D. is Research Psychologist at the University of California Los Angeles and Director of the Integrated Substance Abuse Programs (ISAP) Juvenile Justice Research Group. He has published in the areas of substance abuse crime and offender treatment. He is also a member of the U.S. Health and Human Services Advisory Committee on HIV and STD Prevention for the Centers for Disease Control. Yih-Ing Hser Ph.D. is Adjunct Professor in the Department of Psychiatry and Biobehavioral Sciences at UCLA. She received her Ph.D. in cognitive psychology from UCLA. Her major research interests include human learning and memory drug use epidemiology treatment process and outcome evaluation health services research and development and application of statistical methodologies. M. Douglas Anglin Ph.D. is Professor-in-Residence and an Associate Director of UCLA ISAP. Dr. Anglin has been conducting research on drug abuse epidemiology etiology natural history HIV and AIDS risk treatment process and outcome and policy since 1972 and is author or co-author of more than 200 articles. He has been Principal Investigator on over 30 federally funded studies and numerous state- and county-funded projects. Yu-Chuang (David) Huang Dr.P.H M.P.H. is currently serving as Senior Statistician at the UCLA Integrated Substance Abuse Programs. He provides statistical support on several multicenter longitudinal studies examining health care for drug abuse patients in treatment institutes. Dr. Huang is responsible for planning and conducting all data management and statistical analysis especially in choosing appropriate methods for multivariate analysis.

research Summary: In November 2000, California voters approved the Substance Abuse and Crime Prevention Act (SACPA), also known as “Proposition 36,” which gives adults convicted of nonviolent drug possession offenses the option of participating in drug treatment in lieu of incarceration. Using data from an earlier evaluation of community treatment programs, we examined the subsample of clients admitted to drug treatment during the law's first six months (July 1, 2001 and December 31, 2001; N = 3,748) in 13 counties to describe an initial cohort of SACPA clients (SACPA; N = 688) regarding their participation in treatment and their subsequent rearrest outcomes. These data were compared with other criminal justice-referred clients (Non-SACPA-CJ; N = 1,178) and with clients who entered treatment without a current criminal justice status (Non-CJ; N = 1,882). Relative to Non-CJ clients, CJ (SACPA or Non-SACPA) clients with severe drug problems were significantly less likely to be treated in residential programs. Subsequent analyses further revealed a significant severity by modality interaction, with high-severity/outpatient clients being most likely to be rearrested on a drug-related charge in the 12 months after treatment admission. Although the prevalence of arrests decreased for all three groups after treatment admission, SACPA clients remained more likely to be rearrested for a drug crime even after controlling for the interaction between drug use severity and treatment modality. Policy Implications: These findings underscore the importance of client-treatment matching (based on addiction severity) and of actively applying legal pressure to increase treatment retention and maximize potential treatment benefits.

关键词： Substance Abuse, Crime, Addiction, Treatment, Recidivism

来源：评论

学校读者我要写书评

暂无评论

A low-cost GPS-based wave height and direction sensor for marine safety

A low-cost GPS-based wave height and direction sensor for ma...

引用

17th International Technical Meeting of the Satellite Division of the Institute of Navigation, ION GNSS 2004

作者： Harigae, Masatoshi Yamaguchi, Isao Kasai, Tokio Igawa, Hirotaka Nakanishi, Hiroto Murayama, Takahiro Iwanaka, Yasunori Suko, Hirotaka Zeni Lite Buoy Co. Ltd. Furuno Electric Co. Ltd. Advanced Control Research Group Institute of Space Technology and Aeronautics JAXA Structure Research Group Institute of Space Technology and Aeronautics JAXA Applied Eteorology Research Section Research Department JWA Technical Development Department Zeni Lite Buoy Co. Ltd.

Predicting the development, decay and propagation of ocean waves is essential to allow maritime operations to be carried out safely and economically. A low cost wave height and direction sensor that can be deployed in the open sea is expected to improve the accuracy of wave prediction. We propose a new method for measuring wave height and direction by installing a point-positioning GPS receiver on a buoy placed in the open sea. The essential idea of measuring wave height with centimeter accuracy depends on the fact that the most of the spectrum of GPS point-positioning error exists in the frequency domain below 0.01 Hz, but the frequency spectrum of ocean waves is in a separate band at around 0.1 Hz. Therefore, a sophisticated high-pass filter can extract the movements of a GPS equipped buoy excited by ocean waves with minimum effect of GPS point-positioning error. The three-dimensional GPS positioning data also enables us to measure wave direction. Our proposed system has been already adopted by the Japan Meteorological Agency as the world's first GPS-based wave height and direction measuring system. This paper presents the concept of the point-positioning GPS-based wave sensor, the algorithms for filtering and extracting wave data, and the results of field trials carried out in the open sea.

关键词： Global positioning system

来源：评论

学校读者我要写书评

暂无评论

Theory and Simulation of Dopant Diffusion in SiGe

引用

MRS Online Proceedings Library 2003年第1期765卷 1-6页

作者： Chun-Li Liu Marius Orlowski Aaron Thean Alex Barr Ted White Bich-Yen Nguyen Hernan Rueda Xiang-Yang Liu Advanced Process Research and Development Laboratory Digital DNA Laboratories Motorola inc. Tempe USA RF/IF Technology Laboratory Digital DNA Laboratories Motorola inc. Tempe USA Computational Nanoscience Group Physical Sciences Research Laboratories Motorola inc. Los Alamos USA

Strained Si-based technology has imposed a new challenge for understanding dopant implantation and diffusion in SiGe that is often used as the buffer layer for a strained Si cap layer. In this work, we describe our latest modeling effort investigating the difference in dopant implantation and diffusion between Si and SiGe. A lattice expansion theory was developed to account for the volume change due to Ge in Si and its effect on defect formation enthalpy. The theory predicts that As diffusion in SiGe is enhanced by a factor of ∼10, P diffusion by a factor of ∼2, and B diffusion is retarded by a factor of ∼6, when compared to bulk Si. These predictions are consistent with experiment. Dopant profiles for As, P, and B were simulated using process simulators FLOOPS and DIOS. The simulated profiles are in good agreement with experiment.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics

Improvement of NBTI and electrical characteristics by ozone ...

引用

International Electron Devices Meeting (IEDM)

作者： Seok Joo Doh Hyung-Suk Jung Yun-Seok Kim Ha-Jin Lim Jong Pyo Kim Jung Hyoung Lee Jong-Ho Lee Nae-In Lee Ho-Kyu Kan Kwang-Pyuk Suh Seong Geon Park Sang Bom Kang Gil Heyun Choi Young-Su Chung Hion-Suck Baikz Hdyo-Sik Chang Mann-Ho Cho Dae-Won Moon Hong Bae Park Moonju Cho Cheol Seong Hwang Advanced Process Development Project System LSI Business Samsung Electronics Co. Ltd Yongin Kyunggi-Do Korea Process Development Team 2 Semiconductor R & D Center Samsung Electronics Co. Ltd South Korea AE Center Samsung Advanced Institute of Technology South Korea AE Center Samsung Advanced Institute of Technology Nano Surface group Korea Research Institute of Standard and Science South Korea Nano Surface group Korea Research Institute of Standard and Science School of Materials Science and Engineering Seoul National University Seoul Korea

ISBN: (纸本)0780378725

For the first time, we have investigated the effect of ozone (O/sub 3/) pre-treatment on the bias temperature instability (BTI) characteristics of high-k gate dielectrics. We found that O/sub 3/ pre-treatment improved NBTI and the electrical characteristics of HfAlON gate dielectric. We suggest that O/sub 3/ pre-treatment effectively suppresses the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32 V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded. We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (/spl sim/1.1 V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

关键词： Niobium compounds Titanium compounds Electric variables Dielectrics Voltage Electrodes Degradation Temperature Impurities Nitrogen

来源：评论

学校读者我要写书评

暂无评论

Human systems integration and advanced technology in engineering department workload and manpower reduction

引用

NAVAL ENGINEERS JOURNAL 2003年第1期115卷 57-65页

作者： Lively, KA Seman, AJ Kirkpatrick, M KENNETH A. LIVELY graduated from the University of Colorado with a BS in applied mathematics and an MS in mathematics in 1976 and from the Massachusetts Institute of Technology with an MS in electrical engineering and the degree ocean engineer in naval architecture and marine engineering in 1984. He retired from the U.S. Navy in 1989 after 23 years of service. Assignments included electrical officer on the USS Constellation (CV 64) project engineer for the DDG 51 machinery control system (NAVSEA) and DDG 51 Technical Director (NAVSEA). He was vice president of the PDI Division of Bird-Johnson Company from July 1989 to November 1998 where he managed various gas turbine and machinery controls related development projects. He joined Anteon Corporation's Systems Engineering Group as senior controls engineer in December 1998 where he provided technical support to the integrated power systems program (NAVSEA PMS 510) and managed the Office of Naval Research Afloat Laboratory. DR. MARK KIRKPATRICK is currently an independent consultant in human factors and work-load/manning analysis and modeling. He holds a Ph.D. degree in experimental psychology from The Ohio State University and has 34 years of experience in applied human factors. From 1982 through 2000 Dr. Kirkpatrick served as the senior vice president of Carlow International. Prior to joining Carlow in 1982 Dr. Kirkpatrick served as a member of the technical staff at North American Rockwell's Missiles Division and as a project director and vice president for Essex Corporation. His areas of expertise include workload simulation task analysis operator-in-the-loop simulation human performance experimentation statistical analysis and human factors T&E. He has directed and/or participated in human factors projects for the U.S. Navy U.S. Army NASA Department of Transportation the U.S. Nuclear Regulatory Commission and private industry. ANTHONY J. SEMAN III is the technical manager for the reduced ship's crew by virtual presence (RSVP) advanced technology d

Aboard current ships, such as the DDG 51, engineering control and damage control activities are manpower intensive. It is anticipated that, for future combatants, the workload demand arising from operation of systems under conditions of normal steaming and during casualty response will need to be markedly reduced via automated monitoring, autonomous control, and other technology initiatives. Current DDG 51 class ships can be considered as a manpower baseline and under Condition III typical engineering control involves seven to eight watchstanders at manned stations in the Central control Station, the engine rooms and other machinery spaces. In contrast to this manning level, initiatives such as DD 21 and the integrated engineering plant (IEP) envision a partnership between the operator and the automation system, with more and more of the operator's functions being shifted to the automation system as manning levels decrease. This paper describes some human systems integration studies of workload demand reduction and, consequently, manning reduction that can be achieved due to application of several advanced technology concepts. advanced system concept studies in relation to workload demand are described and reviewed including. Piecemeal applications of diverse automation and remote control technology concepts to selected high driver tasks in current DDG 51 activities. development of the reduced ship's crew by virtual presence system that will provide automated monitoring and display to operators of machinery health, compartment conditions, and personnel health. The IEP envisions the machinery control system as a provider of resources that are used by various consumers around the ship. Resource needs and consumer priorities are at all times dependent upon the ship's current mission and the availability of equipment pawnbrokers.

关键词： Naval warfare

来源：评论

学校读者我要写书评

暂无评论

Improved current performance of CMOSFETs with nitrogen incorporated HfO2-Al2O3 laminate gate dielectric

Improved current performance of CMOSFETs with nitrogen incor...

引用

International Electron Devices Meeting (IEDM)

作者： Hyung-Seok Jung Yun-Seok Kim Jong Pyo Kim Jung Hyoung Lee Jong-Ho Lee Nae-In Lee Ho-Kyu Kang Kwang-Pyuk Suh Hyuk Ju Ryu Chang-Bong Oh Young-Wug Kim Kyung-Hwan Cho Hion-Suck Baik Young Su Chung Hyo Sik Chang Dae Won Moon Advanced Process Development Project Samsung Electronics Co. Ltd. Yongin-City Kyunggi-Do Korea Technology Development Samsung Electronics Co. Ltd. South Korea Technology Development Samsung Electronics Co. Ltd. Kl Manufacturing Team Samsung Electronics Co. Ltd. Advanced Process Development Project System LSI Business Samsung Electronics Company Limited Yongin si Gyeonggi South Korea AE Center Samsung Advanced Institute of Technology South Korea Nano Surface group Korea Research Institute of Standard and Science South Korea

ISBN: (纸本)0780374622

For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1 mA/cm/sup 2/ at V/sub g/=+1.0 V) and low EOT (15.6 /spl Aring/) sufficiently satisfy the specifications (EOT=12/spl sim/20 /spl Aring/, J/sub g/=2.2 mA/cm/sup 2/) estimated by ITRS for low power applications. By in-situ 3 step post-deposition annealing, approximately 17 at.% nitrogen is incorporated at the HfAlON/Si interface. In-situ 3 step post-deposition annealing decreases metallic Hf bonding, which exists at the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate/Si interface. As a result, we can suppress C-V hysteresis and improve current performance. Finally, well-behaved 100 nm CMOSFET devices are achieved. The measured saturation currents at 1.2 V V/sub dd/ are 585 /spl mu//spl Aring///spl mu/m (I/sub off/= 10 nA//spl mu/m) for nMOSFET and 265 /spl mu/A//spl mu/m (I/sub off/=10 nA//spl mu/m) for pMOSFET, which are approximately 80% of those of nitrided SiO/sub 2/. In terms of I/sub on/-I/sub off/ characteristics of n/pMOSFETs, these results represent the best current performance compared with previous reports for poly-Si gate CMOSFETs with high-k gate dielectrics.

关键词： CMOSFETs Nitrogen Hafnium oxide MOSFET circuits Laminates Annealing Dielectrics Leakage current Bonding Capacitance-voltage characteristics

来源：评论

学校读者我要写书评

暂无评论

A 0.20 /spl mu/m CMOS technology with copper-filled contact and local interconnect

A 0.20 /spl mu/m CMOS technology with copper-filled contact ...

引用

Symposium on VLSI Technology

作者： R. Islam S. Venkatesan M. Woo R. Nagabushnam D. Denning K. Yu O. Adetutu J. Farkas T. Stephens T. Sparks Advanced Products Research and Development Laboratory Network Computing Systems Group Process Technology Development Motorola Inc. Austin TX USA

In this work a 0.20 /spl mu/m CMOS technology has been developed using copper-filled local interconnect and contact along with copper metallization. This technology is suitable for logic and SRAM applications. The presence of copper in close proximity to the gate oxide and source/drain regions does not induce any degradation to the transistor parameters. This study shows that copper, along with a robust diffusion barrier, can be used to fill local interconnect and contact holes without deteriorating device performance. In this technology, the minimum transistor is (0.27 /spl mu/m/spl times/0.15 /spl mu/m) with a gate pitch of 0.54 /spl mu/m and minimum metal pitch of 0.63 /spl mu/m.

关键词： CMOS technology Copper Tungsten Integrated circuit interconnections Metallization Etching MOSFETs Contact resistance Random access memory Isolation technology

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：