In Gate-All-Around (GAA) device, it is important to control the crystal height of source and drain (SD) module to prevent unwanted defects. It has been mainly monitored by transmission electron microscope (TEM), but h...
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DeePMD-kit is a powerful open-source software package that facilitates molecular dynamics simulations using machine learning potentials (MLP) known as Deep Potential (DP) models. This package, which was released in 20...
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In the device manufacture after 45nm node utilization of a high precision carbon hard mask (C-HM) process is an important issue. We examined additional H2 plasma hardening treatment to the bottom organic layer in a co...
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In the device manufacture after 45nm node utilization of a high precision carbon hard mask (C-HM) process is an important issue. We examined additional H2 plasma hardening treatment to the bottom organic layer in a conventional multi-layer resist process. Improved results in LWR caused by etching, which is called "wiggling", were obtained. Chemical constitution was analyzed to understand the mechanism of improvement. Analyses were carried out using GSP+FTIR and Raman spectroscopy. This hardening process will provide a very versatile C-HM process that is useful not only FEOL but also BEOL, which includes Dual Damascene process with via hole filling by the bottom organic layer.
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