To make a shallow junction, understanding the influence of the Si surface status is quite important to achieve stable-dose implanted layers. The causes or dose variation can be a sub-nm screening/capping oxide and sil...
详细信息
To make a shallow junction, understanding the influence of the Si surface status is quite important to achieve stable-dose implanted layers. The causes or dose variation can be a sub-nm screening/capping oxide and silicon loss, which originate from the wet chemical processes, the photo resist processes and the clean room environment. These phenomena are examined using SIMS, sheet resistance and the transistor characteristics of a 90 nm node of high end CMOS logic device.
For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1 mA/cm/sup 2/ at V/sub g/=+1.0 ...
详细信息
ISBN:
(纸本)0780374622
For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1 mA/cm/sup 2/ at V/sub g/=+1.0 V) and low EOT (15.6 /spl Aring/) sufficiently satisfy the specifications (EOT=12/spl sim/20 /spl Aring/, J/sub g/=2.2 mA/cm/sup 2/) estimated by ITRS for low power applications. By in-situ 3 step post-deposition annealing, approximately 17 at.% nitrogen is incorporated at the HfAlON/Si interface. In-situ 3 step post-deposition annealing decreases metallic Hf bonding, which exists at the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate/Si interface. As a result, we can suppress C-V hysteresis and improve current performance. Finally, well-behaved 100 nm CMOSFET devices are achieved. The measured saturation currents at 1.2 V V/sub dd/ are 585 /spl mu//spl Aring///spl mu/m (I/sub off/= 10 nA//spl mu/m) for nMOSFET and 265 /spl mu/A//spl mu/m (I/sub off/=10 nA//spl mu/m) for pMOSFET, which are approximately 80% of those of nitrided SiO/sub 2/. In terms of I/sub on/-I/sub off/ characteristics of n/pMOSFETs, these results represent the best current performance compared with previous reports for poly-Si gate CMOSFETs with high-k gate dielectrics.
For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO2-Al2O3 laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1mA/cm2 at Vg=+1.0V) and low EOT (15.6 Å) suf...
详细信息
For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO2-Al2O3 laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1mA/cm2 at Vg=+1.0V) and low EOT (15.6 Å) sufficiently satisfy the specifications (EOT=12∼20Å, Jg=2.2mA/cm2) estimated by ITRS for low power applications. By in-situ 3 step post-deposition annealing, approximately 17 at.% nitrogen is incorporated at the HfAlON/Si interface. In-situ 3 step post-deposition annealing decreases metallic Hf bonding, which exists at the HfO2-Al2O3 laminate/Si interface. As a result, we can suppress C-V hysteresis and improve current performance. Finally, well-behaved 100 nm CMOSFET devices are achieved. The measured saturation currents at 1.2V Vdd are 585μA/μm (Ioff=10nA/μm) for nMOSFET and 265μA/μm (Ioff=10nA/ μm) for pMOSFET, which are approximately 80% of those of nitrided SiO2. In terms of Ion-Ioff characteristics of n/pMOSFETs, these are the best current performance compared with previous reports for the poly-Si gate CMOSFETs with high-k gate dielectrics.
For the first time, we successfully demonstrated MIS capacitor with ALD (Atomic Layer Deposition) grown HfO/sub 2/-Al/sub 2/O/sub 3/ laminate film using Hf liquid precursor (Hf(NEtMe)/sub 4/) with EOT of 22.5 /spl Ari...
详细信息
For the first time, we successfully demonstrated MIS capacitor with ALD (Atomic Layer Deposition) grown HfO/sub 2/-Al/sub 2/O/sub 3/ laminate film using Hf liquid precursor (Hf(NEtMe)/sub 4/) with EOT of 22.5 /spl Aring/ and acceptable leakage currents (1.0 fA/cell at 1.65 V) which is comparable to the smallest reported value. Advantages of Hf(NEtMe)/sub 4/ liquid precursor for DRAM capacitor dielectric are excellent step coverage (94% on high aspect ratio(>40:1)) and reasonable throughput (over two times higher than that of HfCl/sub 4/ solid precursor). This study will provide practical solution for chip-making industry in terms of mass production worthy process for sub-100 nm DRAM capacitor.
For the first time, we successfully demonstrated MIS capacitor with ALD (Atomic Layer Deposition) grown HfO2-Al2O3 laminate film using Hf liquid precursor (Hf(NEtMe)4) with EOT of 22.5 Å and acceptable leakage cu...
详细信息
For the first time, we successfully demonstrated MIS capacitor with ALD (Atomic Layer Deposition) grown HfO2-Al2O3 laminate film using Hf liquid precursor (Hf(NEtMe)4) with EOT of 22.5 Å and acceptable leakage currents (1.0fA/cell at 1.65 V) which is comparable to the smallest reported value. Advantages of Hf(NEtMe)4 liquid precursor for DRAM capacitor dielectric are excellent step coverage (94% on high aspect ratio(>40:1)) and reasonable throughput (over two times higher than that of HfCl4 solid precursor). This study will provide practical solution for chip-making industry in terms of mass production worthy process for sub-100 nm DRAM capacitor.
A significant tonnage of HY-100 steel has been used in the structural designs of new ships and submarines for weight reduction, where HT and HY-80 steels had been previously used. A reduction in hull fabrication costs...
详细信息
A significant tonnage of HY-100 steel has been used in the structural designs of new ships and submarines for weight reduction, where HT and HY-80 steels had been previously used. A reduction in hull fabrication costs and higher productivity can be achieved by substitution of an HSLA steel for HY-100. The significant factor in cost savings through use of HSLA steel in fabrication is the reduction or elimination of preheat for welding. Based on the success of the HSLA-80 steel system, a program was initiated to develop and certify an HSLA-100 steel as a replacement for HY-100 in order to reduce fabrication costs. The alloy development and evaluation to support the certification of HSLA-100 steel plate and weldments for surface combatant structural and ballistic protection applications are summarized. HSLA-100 development consisted of three phases: (1) laboratory alloy development to formulate an interim specification; (2) trial steel mill plate production; and (3) plate production for the certification program. An interim specification for HSLA-100 steel plate was used as the basis for the commercial production of over 200 tons of HSLA-100 by domestic steel plate mills. The alloy design of HSLA-100 represents a significantly different metallurgy and microstructure than HSLA-80 steel, but retains the wettability of very low carbon steel. The certification program was conducted to establish the properties, welding characteristics, fabricability, and structural performance of HSLA-100 steel plate over a range of gages from 1/4 to 3 3/4 inches. The certification program included the characterization of production HSLA-100 steel plate mechanical, physical, and fracture properties; evaluation of wettability and welding process limits for structures of high restraint; studies of fatigue properties and effects of marine environments on HSLA-100; and the fabrication and evaluation of large scale structural models to validate the laboratory developed welding process parameters
暂无评论