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China Semiconductor technology International Conference (CSTIC)

作者： Kuang-Wei Chen Tung-He Chou Syue-Ren Wu Chun-Fu Chen Yung-Tai Hung Tuung Luoh Ling-Wuu Yang Tahone Yang Kuang-Chao Chen Advanced Module Process Development Div Technology Development Center Hsin-chu Taiwan R.O.C

ISBN: (纸本)9781479972425

Color abnormal phenomenon in post Cu chemical mechanical planarization (CMP) is found in 3X nm flash memory. TEM cross-section shows that there is no Cu residue but has localized thickness variation. This color abnormal phenomenon cannot be eliminated with subsequently Cu and barrier polishing. According to experimental results, the non-uniform inhibitor distribution of Cu slurry issue will enhance the localized Cu dishing profile and lead to thickness variations after barrier polishing. This phenomenon is found especially at high selectivity Cu slurry in advanced Cu CMP process. Color abnormal issue is resolved by implementing the slurry with lower corrosion inhibitor concentration. Although it may have slightly dishing issue after Cu polishing, it can be optimized by subsequent barrier polishing process.

关键词： Slurries process control

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APF hard mask distortion improvement for high aspect ratio patterning

APF hard mask distortion improvement for high aspect ratio p...

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China Semiconductor technology International Conference (CSTIC)

作者： Bing-Lung Yu YuKai Huang Shing-Ann Luo Yi-Sheng Cheng Yung-Tai Hung Tuung Luoh Lin-Wuu Yang Tahone Yang Kuang-Chao Chen Advanced Module Process Development Technology Development Center Hsin-chu Taiwan R. O. C

The goal of this research is to improve bending issue and etch durability of amorphous carbon hard mask film (APF). The design of experiments (DoE) employed variable conditions of the spacing, RF power, precursors flow (C 3 H 6 or C 2 H 2 ) and temperature. High Young's modulus and high sp 3 /sp 2 bonding ratio can increase the etching resistance, and strengthen the high aspect ratio patterning structures.

关键词： Radio frequency Stress Bonding Standards Irrigation

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Pattern damage and slurry behavior analysis of CMP process by mechanical and fluid simulations-Yi-Sheng Cheng

Pattern damage and slurry behavior analysis of CMP process b...

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IEEE International Symposium on Semiconductor Manufacturing

作者： Wen-Cheng Yang Shing-Ann Luo YuKai Huang Yung-Tai Hung Tuung Luoh Lin-Wuu Yang Tahone Yang Kuang-Chao Chen Advanced Module Process Development Div. Technology Development Center Hsin-chu Taiwan R. O. C.

ISBN: (纸本)9781467383271

Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the undesired materials in the circumstance with the feeding slurry and the polishing pad. As the device scale shrink, defect and uniformity control have become the major challenge and critical issues of CMP process. Since the CMP performance strongly depends on the consumable parts with complex process parameters, it may take plenty of consumable cost and working hours to improve the processes issues. Therefore the finite element method for the CMP process simulation is adopted to improve the efficiency of CMP process tuning in recent years [1].

关键词： Slurries Semiconductor device modeling Finite element analysis Stress Mathematical model Predictive models Fluids

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development of highly active coated monolith SCR catalyst with strong abrasion resistance for low-temperature application

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Frontiers of Environmental Science & Engineering 2015年第6期9卷 979-987页

作者： Lina GAN Shan LEI Jian YU Hongtao MA Yo YAMAMOTO Yoshizo SUZUKI Guangwen XU Zhanguo ZHANG State Key Laboratory of Multiphase Complex Systems Institute of Process Engineering Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China Materials Research Department Materials Research Laboratories Research and Development Group Meidensha Corporation 8-1 Osaki 2-Chome Shinagawa-ku Tokyo 141-8565 Japan National Institute of Advanced Industrial Science and Technology (AIST) Onogawa 16-1 Tsukuba 305-8569 Japan

Monolith SCR catalysts coated with V2Os- WO3/TiO2 were prepared by varying binder and coating thickness. Comparing with a monolith extruded with 100% V2O5-WO3/TiO2 powder, a coated monolith with a catalyst-coating layer of 260 μm in thickness exhibited the similar initial NOx reduction activity at 250℃. After 4 h abrasion （attrition） in an air stream containing 300 g. m^-3 fine sands （50-100μm） at a superficial gas velocity of 10m·s^-1, the catalyst still has the activity as a 100% molded monolith does in a 24-h activity test and it retains about 92% of its initial activity at 250℃. Estimation of the equivalent durable hours at a fly ash concentration of 1.0 g.m^-3 in flue gas and a gas velocity of 5 m.s^-1 demonstrated that this coated monolith catalyst is capable of resisting abrasion for 13 months without losing more than 8% of its initial activity. The result suggests the great potential of the coated monolith for application to de-NOx of flue gases with low fly ash concentrations from, such as glass and ceramics manufacturing processes.

关键词： coated monolith low-temperature denitration,abrasion resistance attrition

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20nm DRAM: A new beginning of another revolution

20nm DRAM: A new beginning of another revolution

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International Electron Devices Meeting (IEDM)

作者： J. M. Park Y. S. Hwang S.-W. Kim S. Y. Han J. S. Park J. Kim J. W. Seo B. S. Kim S. H. Shin C. H. Cho S. W. Nam H. S. Hong K. P. Lee G. Y. Jin E. S Jung DRAM Technology Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Process Architecture Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Process Development Team Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Advanced Core Equipment Engineering & Development P/J Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea DRAM Product & Technology Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea Semiconductor R&D Center Samsung Electronics Co. Hwasung-City Gyounggi-Do Korea

For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.

关键词： Random access memory Capacitors Lithography Capacitance Honeycomb structures Metals Computer architecture

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Front Cover Picture: An Improved Catalyst for Iodine(I/III)-Catalysed Intermolecular CH Amination (Adv. Synth. Catal. 13/2016)

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advanced Synthesis & Catalysis 2016年第13期358卷

作者： Nicola Lucchetti Michelangelo Scalone Serena Fantasia Kilian Muñiz Institute of Chemical Research of Catalonia (ICIQ) The Barcelona Institute of Science and Technology 16 Avgda. Països Catalans 43007 Tarragona Spain F. Hoffmann-La Roche Ltd. Process Research & Development Grenzacherstrasse 124 4070 Basel Switzerland Catalan Institution for Research and Advanced Studies (ICREA) Pg. Lluís Companys 23 08010 Barcelona Spain

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Hole size distributions in cardo-based polymer membranes deduced from the lifetimes of ortho-positronium

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Journal of Physics: Conference Series 2016年第1期674卷

作者： Y Kobayashi A Kinomura S Kazama K Inoue T Toyama Y Nagai K Haraya H F M Mohamed B E O'Rourke N Oshima R Suzuki Research Institute for Measurement and Analytical Instrumentation National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan The Oarai Center Tohoku University Oarai Ibaraki 311-1313 Japan Present address: Research Reactor Institute Kyoto University Kumatori-cho Sennan-gun Osaka 590-0494 Japan Nippon Steel & Sumitomo Metal Corporation Technical Development & Planning Division 6-1 Marunouchi 2 chome Chiyoda-ku Tokyo 100-8701 Japan Research Institute for Chemical Process Technology National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8565 Japan Physics Department Faculty of Science Minia University P. O. Box 61519 Minia Egypt To whom any correspondence should be addressed.

To clarify the free volume size distributions of the cardo-based polymer membranes, where ortho-positronium (o-Ps) undergoes pick-off annihilation, the o-Ps lifetime distributions were analyzed by the LT9 programme. It was found that the cardo-based polysulfone membrane has much narrower o-Ps lifetime/hole size distributions than the cardo-based polyimide membranes with the 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) moiety. Further, the lifetime/hole size distributions of the cardo-based polymer membranes are appreciably broadened with increasing temperature. This suggests that in these membranes there are holes not only of different sizes but also of different thermal expansion coefficients. It is also shown that in a membrane with a wider hole size distribution the average o-Ps lifetime tends to be longer than would be expected from the correlation between the o-Ps lifetime and the total free volume for common polymers.

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Evaluation of feedstock for powder injection molding

Evaluation of feedstock for powder injection molding

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作者： Jang, Jin Man Lee, Hyeongjae Lee, Wonsik Kim, Yong-In Ko, Se-Hyun Kim, Jong Ha Lee, Jai-Sung Choi, Joon-Phil Advanced Fusion Process R and D Group Korea Institute of Industrial Technology Incheon 406-840 Korea Republic of Adnaced Development Team PIM KOREA Gyeongsan Gyeongbuk 712-831 Korea Republic of Department of Metallurgy and Materials Science Hanyang University-ERICA Ansan Gyeonggi 426-791 Korea Republic of

Methods to evaluate powder injection molding feedstock without performing the complete processing were developed to reduce the developmentto- commercialization cycle time for feedstock. The mixing homogeneity of the powder and binder, rheological properties, mechanical property and shape retainability during debinding were characterized to evaluate the feedstock. The validity of using these parameters was investigated through comparison with various feedstocks. Based on these results, the evaluation methods developed in this work have potential to aid in the selection of proper feedstock without undergoing the subsequent processing. © 2014 The Japan Society of Applied Physics.

关键词： Feedstocks

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A novel PSWT-DTW approach for analyzing pseudo-periodic signals

A novel PSWT-DTW approach for analyzing pseudo-periodic sign...

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IEEE Point-of-Care Healthcare Technologies (PHT)

作者： Aniruddha Joshi Sharat Chandran V.K. Jayaraman B.D. Kulkarni Department of Computer Science and Engineering Indian Institute of Technology Bombay Mumbai India Scientific and Engineering Computing Group Centre for Development of Advanced Computing Pune India Chemical Engineering and Process Development Division National chemical Laboratory Pune India

Pseudo-periodic signals are rampant in biomedical applications but are difficult to analyze. One approach is to compute time domain parameters of each individual cycle in the pseudo-periodic signal. The classic approach requires repeated computation in each cycle, which tends to be either error prone, computationally burdensome, or requires manual effort. We provide a novel combination of the pitch synchronous wavelet transform which when combined with dynamic time warping results in effective quantification of cycles in the pseudo-periodic signal. We demonstrate our application of this method in studying the arterial pulse. The results show that our approach is feasible and effective, and confirms further scope in other applications.

关键词： Market research Discrete wavelet transforms Time domain analysis Manuals Physiology

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Influences of etcher chamber condition on critical-dimension shifts in advanced floating gate etching process

Influences of etcher chamber condition on critical-dimension...

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IEEE/SEMI Conference and Workshop on advanced Semiconductor Manufacturing

作者： Sheng-Yuan Chang Yu-Chung Chen An Chyi Wei Hong-Ji Lee Nan-Tzu Lian Tahone Yang Kuang-Chao Chen Chih-Yuan Lu Technology Development Center Advanced Module Process Development Division Macronix International Company Limited Hsinchu Taiwan

The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF 6 /O 2 -based very long plasma-chamber cleaning or the novel Transformer coupled plasma (TCP) window temperature design not only achieves a stable gate CD (CD variation

关键词： Etching Cleaning Nonvolatile memory Logic gates Plasma temperature Polymers

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