检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

255 篇 会议
106 篇 期刊文献
1 册 图书

馆藏范围

361 篇 电子文献
1 种 纸本馆藏

日期分布

学科分类号

213 篇 工学
- 111 篇 电子科学与技术（可...
- 88 篇 化学工程与技术
- 69 篇 材料科学与工程（可...
- 58 篇 电气工程
- 50 篇 计算机科学与技术...
- 40 篇 冶金工程
- 18 篇 机械工程
- 13 篇 动力工程及工程热...
- 13 篇 控制科学与工程
- 12 篇 信息与通信工程
- 10 篇 力学（可授工学、理...
- 10 篇 软件工程
- 9 篇 土木工程
- 9 篇 环境科学与工程（可...
- 7 篇 光学工程
- 7 篇 建筑学
- 7 篇 轻工技术与工程
- 5 篇 生物医学工程（可授...
- 4 篇 仪器科学与技术
- 4 篇 交通运输工程
129 篇 理学
- 79 篇 化学
- 74 篇 物理学
- 18 篇 数学
- 7 篇 统计学（可授理学、...
- 6 篇 生物学
20 篇 管理学
- 18 篇 管理科学与工程(可...
- 9 篇 工商管理
9 篇 经济学
- 9 篇 应用经济学
6 篇 农学
6 篇 医学
1 篇 法学

主题

25 篇 etching
25 篇 cmos technology
24 篇 degradation
22 篇 large scale inte...
21 篇 dielectrics
20 篇 copper
18 篇 random access me...
17 篇 electrodes
16 篇 annealing
15 篇 fabrication
15 篇 research and dev...
14 篇 mosfets
13 篇 testing
12 篇 voltage
12 篇 laboratories
12 篇 nonvolatile memo...
12 篇 doping
11 篇 cmos process
11 篇 temperature
11 篇 phase change ran...

机构

7 篇 technology devel...
6 篇 advanced lsi tec...
6 篇 advanced process...
6 篇 process technolo...
4 篇 key laboratory o...
4 篇 university of ch...
4 篇 system devices r...
3 篇 process developm...
3 篇 advanced device ...
3 篇 key laboratory o...
3 篇 process and manu...
3 篇 advanced process...
3 篇 advanced process...
3 篇 ae center samsun...
3 篇 ae center samsun...
3 篇 key laboratory o...
3 篇 samsung advanced...
3 篇 advanced lsi tec...
3 篇 advanced technol...
2 篇 c project fujits...

作者

14 篇 j.h. park
13 篇 kuang-chao chen
13 篇 tahone yang
12 篇 kinam kim
11 篇 kim kinam
11 篇 h.s. jeong
10 篇 y.n. hwang
10 篇 s.h. lee
9 篇 g.t. jeong
9 篇 g.h. koh
9 篇 kang ho-kyu
9 篇 chih-yuan lu
9 篇 lee nae-in
9 篇 s.y. lee
8 篇 s.o. park
8 篇 park j.h.
8 篇 j.t. moon
8 篇 s.j. ahn
8 篇 h. horii
8 篇 k.c. ryoo

语言

341 篇 英文
11 篇 其他
7 篇 中文
3 篇 日文

检索条件"机构=Advanced Process Technology Development"

共 362 条记录，以下是151-160 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory

Vertical cell array using TCAT(Terabit Cell Array Transistor...

引用

Symposium on VLSI technology

作者： Jaehoon Jang Han-Soo Kim Wonseok Cho Hoosung Cho Jinho Kim Sun Il Shim Younggoan Jae-Hun Jeong Byoung-Keun Son Dong Woo Kim Kihyun Jae-Joo Shim Jin Soo Lim Kyoung-Hoon Kim Su Youn Yi Ju-Young Lim Dewill Chung Hui-Chang Moon Sungmin Hwang Jong-Wook Lee Yong-Hoon Son U-In Chung Won-Seong Lee Samsung Electronics Co. Ltd Giheung-Gu Yongin-City Gyeonggi-Do Korea Memory Research and Development Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Team 2&Process Development Team Memory R&D Center

Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.

关键词： SONOS devices Plugs Costs Etching Transistors Scalability Nonhomogeneous media Dielectric substrates Sun Moon

来源：评论

学校读者我要写书评

暂无评论

Evaluation on CDM project of Ming-Hong Biogas Engineering in ChuXiong city

Evaluation on CDM project of Ming-Hong Biogas Engineering in...

引用

第十三届世界湖泊大会

作者： Li yun Zhang wudi Li jianchang Yin fang Xu rui Chen yubao Liu shiqing Key Laboratory of Advanced Technology and Process of Renewable Energy Materials Ministry of EducationEngineering Research Center of Sustainable Development and Utilization of Biomass EnergyMinistry of EducationProvincial Key Laboratory of Rural Energy EngineeringYunnan Normal University

CDM project helps developed countries and enterprises to reduce greenhouse gas emission under the control of Kyoto *** certified emission reductions(CERs),CDM project can bring economic and environmental benefits to the biogas *** paper evaluated the clean development mechanism(CDM) of Ming-Hong biogas *** was designated to illuminate the reduction of greenhouse gas and its benefits for company when a CDM project based on biogas engineering was put into operation.

关键词： CDM project Biogas engineering evaluation

来源：评论

学校读者我要写书评

暂无评论

Study on degradation of cassava by multi-strains for ethanol

Study on degradation of cassava by multi-strains for ethanol

引用

第十三届世界湖泊大会

作者： Yin fang Liu jing Luo mei Zhang wudi Liu shiqing Chen yubao Li jianchang Xui rui Key Laboratory of Advanced Technology and Process of Renewable Energy Materials Ministry of EducationEngineering Research Center of Sustainable Development and Utilization of Biomass EnergyMinistry of EducationProvincial Key Laboratory of Rural Energy EngineeringYunnan Normal University

The cassava was decomposed by conventional amylase and glucoamylase,or multi-strains selected from *** with the content of reducing sugar,the enzyme activity of amylase,cellulose,and protease,the co-fermentation system established by multi-strains and yeast can play an active role on the improving utilization of cassava and decreasing energy consumption.

关键词： Cassava Multi-strains Degradation of cassava

来源：评论

学校读者我要写书评

暂无评论

Biodiesel production from olive oil

Biodiesel production from olive oil

引用

第十三届世界湖泊大会

作者： Zhang shimin Zhang wudi Li jianchang Yin fang Rui xu Chen yubao Liu shiqing Key Laboratory of Advanced Technology and Process of Renewable Energy Materials Ministry of EducationEngineering Research Center of Sustainable Development and Utilization of Biomass EnergyMinistry of EducationProvincial Key Laboratory of Rural Energy EngineeringYunnan Normal University

It was reported that biodiesel was made through transesterification of olive oil by methanol *** as *** reaction conditions were reviewed such as the amount of methanol and catalyst,reaction time and *** orthogonal analysis of parameters in a four-factor and three-level test,the optimum conditions were obtained:reaction temperature70℃ reaction time 100 min,15% methanol and 1.0% KOH based on oil *** conditions the conversion rate was up to 95.2%.

关键词： olive oil biodiesel transesterification optimum condition

来源：评论

学校读者我要写书评

暂无评论

The study of mobility-tin, trade-off in deeply scaled high-k / metal gate devices and scaling design guideline for 22nm-node generation

The study of mobility-tin, trade-off in deeply scaled high-k...

引用

Symposium on VLSI technology

作者： Masakazu Goto Shigeru Kawanaka Seiji Inumiya Naoki Kusunoki Masumi Saitoh Kosuke Tatsumura Atsuhiro Kinoshita Satoshi Inaba Yoshiaki Toyoshima Center for Semiconductor Research and Development Toshiba Corporation Kanagawa Japan Center for Semiconductor Research and Development Process and Manufacturing Engineering Center Toshiba Corporation Kanagawa Japan Process and Manufacturing Engineering Center System LSI Division semiconductor company Toshiba Corporation Kanagawa Japan System LSI Division Semiconductor Company Advanced LSI Technology Laboratory Toshiba Corporation Isogo-ku Yokohama Kanagawa Japan

The trade-off between T inv scaling and carrier mobility (mu) degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. I on , components are analyzed in terms of N S , v inj and SCE in L g = 25 nm devices for the first time. As a result, it is clarified that the aggressive T inv scaling can achieve the performance improvement even if mu degradation occurs in some degree, because mu impact decreases with L g and T inv scaling impact becomes strong. Furthermore, we have introduced the effective T inv scaling (novel SiON) process and demonstrated its excellent device performance (I on 1 mA/mum @I off =100 nA/mum, L g 25 nm, V dd =LOV, A vt =1.8 mV mum, T inv 1.13 nm, without any performance booster technology).

关键词： High K dielectric materials High-K gate dielectrics Guidelines Very large scale integration Paper technology

来源：评论

学校读者我要写书评

暂无评论

Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy

Insight into the S/D engineering by high-resolution imaging ...

引用

International Electron Devices Meeting (IEDM)

作者： Li Zhang Masumi Saitoh Atsuhiro Kinoshita Nobuaki Yasutake Akira Hokazono Nobutoshi Aoki Naoki Kusunoki Ichiro Mizushima Mitsuo Koike Shiro Takeno Junji Koga Advanced LSI Technology Laboratory Corporate Research & Development Center Toshiba Corporation Kawasaki Japan Center of Semiconductor Research and Development Toshiba Corporation Kawasaki Japan System LSI Division Toshiba Corporation Kawasaki Japan Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Kawasaki Japan

ISBN: (纸本)9781424456390

For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage on (110) nFETs. The Si:C influences on S/D profiles are also directly observed. We also succeeded in a full-FIB sample-making for the first time, showing the high potential of SSRM technology for further scaled devices.

关键词： High-resolution imaging Microscopy Degradation CMOSFETs Large scale integration Boron Electrical resistance measurement Circuits Bonding Laboratories

来源：评论

学校读者我要写书评

暂无评论

Nanotechnology applications for clean water /

引用

2009年

作者： edited by Nora Savage ... [et al.].

来源：内蒙古大学图书馆图书评论

学校读者我要写书评

暂无评论

The study of mobility-Tinv trade-off in deeply scaled high-k/metal gate devices and scaling design guideline for 22nm-node generation

The study of mobility-Tinv trade-off in deeply scaled high-k...

引用

2009 Symposium on VLSI technology, VLSIT 2009

作者： Goto, Masakazu Kawanaka, Shigeru Inumiya, Seiji Kusunoki, Naoki Saitoh, Masumi Tatsumura, Kosuke Kinoshita, Atsuhiro Inaba, Satoshi Toyoshima, Yoshiaki Center for Semiconductor Research and Development Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan Process and Manufacturing Engineering Center Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan System LSI Division Semiconductor Company Toshiba Corporation Isogo-ku Yokohama Kanagawa 235-8522 Japan Advanced LSI Technology Laboratory Corporate R and D Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama Kanagawa 235-8522 Japan

ISBN: (纸本)9784863480094

The trade-off between Tinv scaling and carrier mobility (μ) degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. Ion components are analyzed in terms of N s, vinj and SCE in Lg=25nm devices for the first time. As a result, it is clarified that the aggressive Tinv scaling can achieve the performance improvement even if μ degradation occurs in some degree, because μ impact decreases with Lg and T inv scaling impact becomes strong. Furthermore, we have introduced the effective Tinv scaling (novel SiON) process and demonstrated its excellent device performance (Ion=1mA/μm @Ioff=100nA/ μm, Lg=25nm, Vdd=1.0V, Avt=1.8mVm, Tinv=1.13nm, without any performance booster technology).

关键词： Economic and social effects

来源：评论

学校读者我要写书评

暂无评论

Feasibility of ultra-low k1 lithography for 28nm CMOS node

Feasibility of ultra-low k1 lithography for 28nm CMOS node

引用

Optical Microlithography XXII

作者： Mimotogi, Shoji Takahata, Kazuhiro Murakami, Takashi Nagahara, Seiji Takeda, Kazuhiro Satake, Masaki Kitamura, Yosuke Ojima, Tomoko Fujise, Hiroharu Seino, Yuriko Ema, Tatsuhiko Yonemitsu, Hiroki Takakuwa, Manabu Nakagawa, Shinichiro Kono, Takuya Asano, Masafumi Kyoh, Suigen Harakawa, Hideaki Nomachi, Akiko Ishida, Tatsuya Hasegawa, Shunsuke Miyashita, Katsura Tominaga, Makoto Inoue, Soichi Toshiba Corporation Semiconductor Company 8 Sinsugita-cho Isogo-ku Yokohama 235-8522 Japan System LSI Division 1 Toshiba Corporation Semiconductor Company 8 Sinsugita-cho Isogo-ku Yokohama 235-8522 Japan Advanced CMOS Technology Department SoC Research and Development Center Toshiba corporation 8 Sinsugita-cho Isogo-ku Yokohama 235-8522 Japan Process Tchnology Division NEC Electronics Corporation 8 Sinsugita-cho Isogo-ku Yokohama 235-8522 Japan

ISBN: (纸本)9780819475275

We have designed the lithography process for 28nm node logic devices using 1.35NA scanner. In the 28nm node, we face on the ultra-low k1 lithography in which dense pattern is affected by the mask topography effect and the oblique-incidence. Using the rigorous lithography simulation considering the electro-magnetic field, we have estimated accurately the feasibility of resolution of the minimum pitch required in 28nm node. The optimum mask plate and illumination conditions have been decided by simulation. The experimental results for 28nm node show that the minimum pitch patterns and minimum SRAM cell are clearly resolved by single exposure. © 2009 SPIE.

关键词： Logic devices

来源：评论

学校读者我要写书评

暂无评论

development of 38nm Bit-Lines using Copper Damascene process for 64-Giga bits NAND Flash

Development of 38nm Bit-Lines using Copper Damascene Process...

引用

IEEE/SEMI Conference and Workshop on advanced Semiconductor Manufacturing

作者： Byungjoon Hwang Namsu Lim Jang-Ho Park Sowi Jin Minjeong Kim Jaesuk Jung Byungho Kwont Jongwon Hong Jeehoon Han Donghwa Kwak Jaekwan Park Jung-Dal Choi Won-Seong Lee Advanced Technology Development Team Yongin si South Korea Process Development Team Memory Business Samsung Electronics Co. Ltd. Yongin-City Kyungki-Do Korea

In order to develop high density NAND flash device, the increased number of cell strings for 1 page buffer forces to form a long bit-line with low sheet resistance, as well as low parasitic capacitance between bit-lines. In this paper, we secured a copper damascene process to form 38 nm bit-lines with 76 nm pitch using SADP (self-aligned double patterning) process. The methods to minimize the sheet resistance and to suppress the parasitic capacitance were explained on NAND flash device with 38 nm node technology.

关键词： Copper Etching Parasitic capacitance Lithography Tungsten Filling Research and development Electronic mail Resists Chemical processes

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共37页 << < 12 13 14 15 16 17 18 19 20 21 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：