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International Microsystems, Packaging, Assembly and Circuits technology (IMPACT)

作者： Shen-Yu Yang Yu-Wen Tong Jing-Jun Lin Jui-Hao Yang Chih-Hung Peng Chao-Chieh Chan Advanced Mfg. Process Development Div. Research & Technology Integration Center Wistron NeWeb Corporation Hsinchu 300 Taiwan

The demands for radio frequency (RF) of up-coming 5G electronic applications are gradually rising, arising recently from the need of smaller and thinner package in internet of things (IoT) and electronics devices. 3D system in package (3D SiP) including double side molding and antenna in package (AiP) could meet the above requirements. Dual side surface mounting technology (SMT) and double side molding are performed in this study to achieve miniaturization of 3D SiP module. A cost-effective and alternative molding process is completed by vacuum printing encapsulation systems (VPES) instead of common transfer molding. In this study, there are two kinds of double side molding structures, conformal and compartment molding, are employed with EMI shielding. Both molding architectures adopted conductive material as a dam to ensure electrical connectivity of side wall and sputtering metal layer to acquire EMI shielding effectiveness. To verify the reliability response of the molding structure, pre-conditioning is performed. A successful double side molding structure done by VPES with PCB warpage of 0.5 ~0.6 mm has been achieved in this work. Moreover, the dual side molding could reach the package requirements of 5G IoT module.

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Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAN...

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Symposium on VLSI technology

作者： Geonhui Han Youngdong Kim Jaeseon Kim Dongmin Kim Yoori Seo Chuljun Lee Jinmyung Choi Jinwoo Lee Dongho Ahn Sechung Oh Donghwa Lee Hyunsang Hwang Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang Korea Advanced Process Development Team 2 Samsung Electronics Gyeonggi-do Republic of Korea

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

We firstly demonstrate highly scalable interface type RRAM based 3D V-NAND memory with WOx resistivity switching (RS) layer and IGZO selector transistor (Tr). 3D vertical interface type RRAM integrated with IGZO Tr (VB-RRAM), utilizing bypass reading between Tr and RS layer, exhibits low voltage operation (< 5 V), multi-bit (4 bit) capability, and high uniformity of the RS layer while improving the limitations of on/off ratio. Furthermore, with scaling the channel length down to 30 nm, we achieved fast switching speed (~50 us), stable endurance (> 10 7 cycles), and low switching energy consumption (5 fJ). Finally, critical V-NAND issues like read disturbance and interface layer were also evaluated.

关键词： Low voltage Energy consumption Three-dimensional displays Switches Very large scale integration Conductivity Transistors

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Design,synthesis,and biological evaluation of 1,2,4-triazole derivatives as potent antitubercular agents

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Chinese Chemical Letters 2024年第3期35卷 326-331页

作者： Yu Wen Shichun Lun Yuxue Jiao Wei Zhang Tianyu Hu Ting Liu Fan Yang Jie Tang Bing Zhang William R.Bishai Li-Fang Yu Shanghai Engineering Research Center of Molecular Therapeutics and New Drug Development School of Chemistry and Molecular EngineeringEast China Normal UniversityShanghai 200062China Center for Tuberculosis Research Department of MedicineDivision of Infectious DiseaseJohns Hopkins School of MedicineBaltimoreMD21231-1044United States Shanghai Institute for Advanced Immunochemical Studies and School of Life Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Key Laboratory of Green Chemistry and Chemical Process School of Chemistry and Molecular EngineeringEast China Normal UniversityShanghai 200062China

Inhibition of mycobacterial membrane protein large 3(MmpL3)thereby affecting the mycolic acid biosynthetic pathway has been proven to be an effective strategy for developing antitubercular *** on the X-ray crystal structure of MmpL3 inhibitor complexes,a series of novel 1,2,4-triazole derivatives were designed,synthesized and evaluated antitubercular activity against Mtb strain *** structure–activity relationship exploration resulted in the identification of compounds 21 and 28,which possess potent antitubercular activity against Mtb strain H37Rv[minimum inhibitory concentration(MIC)=0.03–0.13μg/mL]and the clinical isolates of multidrug resistance(MDR)and extensive drug resistance(XDR)tuberculosis(MIC=0.06–1.0μg/mL).Moreover,compounds 21 and 28 showed neglectable cytotoxicity(IC_(50)≥32μg/mL)to the mammalian Vero cells and favorable physicochemical and pharmacokinetic properties according to the in silico absorption,distribution,metabolism and excretion(ADME)***,the potential target of representative 1,2,4-triazole 28 was identified to be MmpL3 using a microscale thermophoresis(MST)assay.

关键词： Tuberculosis MDR and XDR-TB MmpL3 inhibitor 1 2 4-Triazole Structure-based drug design

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Multi Die Stacked Structure Fabricated by WoW Bonding

Multi Die Stacked Structure Fabricated by WoW Bonding

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IEEE CPMT Symposium Japan

作者： Haruo Shimamoto Yuuki Araga Masahisa Fujino Naoya Watanabe Kenji Takahashi Katsuya Kikuchi Tsuyoshi Kawagoe Ichiro Homma Takatoshi Masuda Device Technology Research Institute National Institute of Advanced Industrial Science & Technology Tsukuba Ibaraki Japan Stacking Process Development Department UltraMemory Inc. Hachioji Tokyo Japan

To achieve 2-die stacking process, fusion bonding technology was applied for Wafer on Wafer (WoW) by each oxide film, and Through Silicon Via (TSV) was used to connect metal layer in each wafer. Electrical characteristics was evaluated to confirm the connection. We also introduced the case study of 4-die stacking using the 2-die stacking technology.

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Physicochemical Characterisation of Flours from Local Cereals and Powder from Cassava (Manihot esculenta Crantz) Leaves Varieties Cultivated in the Northern-Cameroon in Order to Supplement Infant Flours

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Open Journal of Applied Sciences 2024年第8期14卷 2009-2026页

作者： Mathieu Barbi Charles Touwang Emmanuel Panyoo Akdowa Augustin Goudoum Armand Abdou Bouba Department of Agriculture Livestock and Derivated Products National Advanced School of Engineering University of Maroua Maroua Cameroon Institute of Agricultural Research for Development (IRAD) Food Technology and Post-Harvest Laboratory of Garoua Garoua Cameroon Department of Food Sciences and Nutrition National Advanced School of Agro-Process Industries University of Ngaoundr Ngaoundr Cameroon

The aim of the present study was to investigate on the inventory and determination of the nutritional value of cereals flour and cassava leaves powder in order to analyse their use in the production of infant flour. In this paper, a A survey to identify the cereals used in the preparation of infant porridge in the Northern Cameroon was done by using 447 mothers having children between 06 and 59 months from areas (Gbakoungue, Sassa-Mbersi, Sanguere-Ngal and Kotkong-Wouldata) with high rate on malnourished children. Flour was prepared from the most preponderant cereals and Cassava leaves powder from varieties identified by the Regional Centre of Agricultural Research (CRRA) of Wakwa and local population. Flour and powder samples obtained were subjected to chemical composition analysis. Parameters analysed were crude proteins, total carbohydrates, ash, total fats, total phenols, total tannins, total carotenoids, vitamin C or cyanide. Also Iron, calcium and zinc were determined. The results revealed that white maize (62%) was the main cereal used in the preparation of infant porridge followed respectively by red sorghum, white rice and muskwari. Ten cassava varieties were identified: three (03) by CRRA (TME, 96/1/14 and IRAD 4115) and seven (south, gambada, sweet, Benin, six months, M. glaziovii and grouna) by local population. Amongst cereals flour, those from white maize indicated high protein (10.09%), carbohydrates (84.46%) and total fat (7.46%) contents. The powder from 96/14/14 cassava variety showed high amount of iron (11.98 mg/100g), calcium (751.02 g/100g) and low cyanide content (1.21 ppm) amongst all the cassava leaves powder samples. The supplementation of white maize flour by cassava leaves powder from 96/14/14 variety could therefore be recommended for the preparation of infant flours.

关键词： Infant Flour Cereals Flour Cassava Leaves Powder Chemical Composition Northern Cameroon

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Efficient conversion of benzene and syngas to toluene and xylene over ZnO-ZrO_(2)&H-ZSM-5 bifunctional catalysts

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Chinese Journal of Chemical Engineering 2022年第5期35卷 203-210页

作者： Xiao Zhao Xuan Shi Zhongshun Chen Long Xu Chengyi Dai Yazhou Zhang Xinwen Guo Dongyuan Yang Xiaoxun Ma School of Chemical Engineering Northwest UniversityXi’an 710069China International Science&Technology Cooperation Base for Clean Utilization of Hydrocarbon Resources Chemical Engineering Research Center of the Ministry of Education for Advanced Use Technology of Shanbei EnergyCollaborative Innovation Center for Development of Energy and Chemical Industry in Northern ShaanxiNorthwest UniversityXi’an 710069China School of Chemical Engineering Dalian University of TechnologyDalian 116024China Shaanxi Key Laboratory of Energy Chemical Process Intensification School of Chemical Engineering and TechnologyXi’an Jiaotong UniversityXi’an 710049China Shanxi yanchang Petroleum(Group)Corp.LtdXi’an 710000China

A series of ZnO-ZrO_(2) solid solutions with different Zn contents were synthesized by the urea coprecipitation method,which were coupled with H-ZSM-5 zeolite to form bifunctional *** a new benzene alkylation reagent,syngas was used instead of methanol to realize the efficient conversion of syngas and benzene into toluene and xylene.A suitable ratio of ZnO-ZrO_(2) led to the significant improvement in the catalytic performance,and a suitable amount of acid helped to increase the selectivity of toluene/xylene and reduce the selectivity of the by-products ethylbenzene and C^(9+) *** highest benzene conversion of 89.2%and toluene/xylene selectivity of 88.7%were achieved over 10%ZnO-ZrO_(2)&H-ZSM-5(Si/Al=23)at a pressure of 3 MPa and a temperature of 450℃.In addition,the effect of the zeolite framework structure on product distribution was *** to the molecular dynamics of aromatic hydrocarbons,H-ZSM-5 zeolites comprise 10-membered-ring pores,which are beneficial to the activation of benzene;hence,the conversion of benzene is higher.H-ZSM-35 and HMOR zeolites exhibited small eight-membered-ring channels,which were not conducive to the passage of benzene;hence,the by-product ethylbenzene exhibits a higher *** distance between the active centers of the bifunctional catalysts was the main factor affecting the catalytic performance,and the powder mixing method was more conducive to the conversion of syngas and benzene.

关键词： ZnO-ZrO_(2) Bifunctional catalysts Aromatics Alkylation of benzene Syngas

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Reverse Laser Assisted Bonding (R-LAB) technology for Chiplet Module Bonding on Substrate

Reverse Laser Assisted Bonding (R-LAB) Technology for Chiple...

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Electronics Packaging technology Conference (EPTC)

作者： SeokHo Na MinHo Gim GaHyeon Kim DongSu Ryu DongJoo Park JinYoung Kim Advanced Process & Material Development Global R&D Center Amkor Technology Korea Inc. Incheon Republic of Korea

ISBN: (纸本)9798350398861

There are several chip-to-substrate interconnection technologies in the packaging tool kit such as mass reflow (MR), thermocompression bonding (TCB) and laser assisted bonding (LAB). MR is a mature process but has known limitations on fine pitch devices and large/thin substrate packages. TCB has the advantage to minimize bump stress for low-K dielectric devices but its productivity is very low. However, LAB can provide a solution for advanced devices with its localized heating and short bonding time. Recently, demand for fine-pitch, Flip Chip bumps and large/thin substrate packages has increased, resulting in industry interest in LAB due to its good quality and high productivity. Amkor technology invented LAB technology in 2014 and passed qualification for multiple devices from customers through many years of development and has been in high volume production for major customers since 2018. However, as the industry continues to require high bonding performance with various new devices, existing LAB technology may not support all these applications. These devices have led to the development of a new bonding concept, which is reverse laser assisted bonding (R-LAB) technology. R-LAB emits the laser to the bottom side of the substrate through a vacuum stage block, which is opposite laser emission direction to existing LAB. It was developed in 2021 by Amkor technology and showed promising results for the packages where top LAB does not work. There are several devices that require R-LAB. One is back side metallization (BSM) die. BSM dies are necessary for metal thermal interface material (TIM) applications for high thermal performance packages. Promising results for BSM die were published in recent 72 nd ECTC [1]. Other devices that require R-LAB include chiplet module bonding on substrate and DRAM packaging in an epoxy molding compound (EMC). A chiplet module is necessary for high-performance applications such as servers, networking, artificial intelligence (AI), graphi

关键词： Performance evaluation Productivity Industries Lasers Surface emitting lasers Packaging Electromagnetic compatibility

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Nondestructive in-cell conductivity metrology for memory semiconductors using near-field THz spectroscopy

Nondestructive in-cell conductivity metrology for memory sem...

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Metrology, Inspection, and process Control XXXIX 2025

作者： Jun, Sunhong Baek, Inkeun Kwak, Hyunsoo Yun, Hyeong Seok Jang, Yoonkyung Kim, Seonmyeong Ryu, Hanjung Kim, Wontae Priwisch, Martin Lee, Sooyeong Kim, Souk Ahn, Jinwoo Jo, Taeyong Ryu, Sungyoon Lee, Myungjun Yang, Yusin Sohn, Younghoon Metrology and Inspection Technology Team Samsung Electronics Co. Ltd. Gyeonggi-Do Hwaseong-Si18848 Korea Republic of Advanced Process Development Lab 4 Samsung Electronics Co. Ltd. Gyeonggi-Do Hwaseong-Si18848 Korea Republic of Foundry Process Development Team Samsung Electronics Co. Ltd. Gyeonggi-Do Hwaseong-Si18848 Korea Republic of

ISBN: (纸本)9781510686380

We have developed a non-destructive, in-line wafer metrology technique using terahertz (THz) waves that overcomes conventional limitations in the handling of electrical properties in the thin film processes. By combining a near-field microprobe with THz time-domain spectroscopy (TDS) and establishing an accurate alignment system, we have achieved sub-10 μm resolution. It has been integrated as an in-line metrology system in a memory production line and demonstrated on device wafers. Our signal correction method effectively suppresses signal variations in the lower part of the multi-stack enabling the non-invasive measurement of metal film resistivity through THz TDS, which is used as the gate metal or various contacts. This was utilized to non-destructively measure resistance in the cell, where the actual transistors are formed during the memory semiconductor integration process. Currently, the sheet resistance (Rs) is measured at the observation site (OS) with a 4-point probe (4PP), but as the distance from the OS increases, the resistance value changes and the representativeness of the actual cell decreases. We found that after the tungsten contact deposition process of vertical NAND flash, the agreement with the Rs of the OS drops to R2 0.42 in the cell area away from the OS. On the other hand, using THz transmittance, we were able to measure Rs in the cell without contact, and found that the agreement with Rs of 4PP at the same location was R2 0.97. In the case of the TiN metal gate of a DRAM cell transistor, it is not possible to measure the electrical properties with 4PP after the etching process and thermal process where the actual structure is formed, but it is possible with THz TDS. The RsTHz obtained from the THz transmittance shows that the resistivity changes significantly after the etching and thermal process from the initial metal deposition state. © 2025 SPIE.

关键词： Tungsten sheet

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Extreme Ultraviolet Scatterometry for Characterizing Nanometer Scale Features in a Damascene Sample

Extreme Ultraviolet Scatterometry for Characterizing Nanomet...

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2024 Frontiers in Optics, FiO 2024

作者： Klein, C. Jenkins, N. Shao, Y. Li, Y. Park, S. Kim, W. Kapteyn, H. Murnane, M. Department of Physics JILA STROBE NSF Science & Technology Center University of Colorado NIST BoulderCO United States Core Technology R&D Team Mechatronics Research Samsung Electronics Co. Ltd. Hwasung Korea Republic of Advanced Process Development Team 4 Semiconductor R&D Center Samsung Electronics Co. Ltd. Hwasung Korea Republic of Kapteyn-Murnane Laboratories Inc. 4775 Walnut Street #102 BoulderCO80301 United States

We characterize nanoscale out-of-plane features on an industrially relevant semiconductor sample using a coherent extreme ultraviolet high harmonic generation source at 29nm. The advantages of using 13.5nm light are a... 详细信息

关键词： Extreme ultraviolet lithography

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Numerical Study on the Influence of Polyimide Thickness and Curing Temperature on Wafer Bow in Wafer Level Packaging

Numerical Study on the Influence of Polyimide Thickness and ...

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作者： Singh, Prashant Kumar Rohlfs, Patrick Sandmann, Gunther Machani, Kashi Vishwanath Breuer, Dirk Meier, Karsten Kuechenmeister, Frank Wieland, Marcel Bock, Karlheinz Advanced Packaging Development GlobalFoundries Dresden Module One LLC & Co.KG Dresden Germany Process Integration BEOL GlobalFoundries Dresden Module One LLC & Co.KG Dresden Germany Institute of Electronic Packaging Technology Technische Universität Dresden Dresden Germany Global Reliability GlobalFoundries Dresden Module One LLC & Co.KG Dresden Germany

In wafer level packaging, polyimide and electroplated copper are dielectric and conducting materials respectively in the so-called redistribution layers. During the wafer fabrication process large amount of stress is generated in those layers due to curing shrinkage of the polyimide and the coefficient of thermal expansion mismatch of both materials to silicon which can lead to severe wafer bow after a high temperature curing. In different applications polyimide can be used either only as passivation layer over electroplated copper, or polyimide is applied before the redistribution layer and then a second polyimide layer is applied as passivation. In the current study the effect of different polyimide integrations is investigated. In-situ wafer bow measurements and finite element method studies were conducted with samples, with and without polyimide below redistribution layer, exposed to different curing temperatures to understand the change in wafer bow and copper residual stress. It is observed that wafers with polyimide before redistribution layer show higher stress relaxation in copper with decreasing curing temperature, resulting therefore in a lower wafer bow. A good agreement is achieved between the experimentally measured and the simulated wafer bow. © 2023 IMAPS-International Microelectronics and Packaging Society. All rights reserved.

关键词： Residual stresses

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