检索结果-内蒙古大学图书馆

Publisher Correction: Free-standing two-dimensional ferro-ionic memristor

Nature communications 2024年第1期15卷 9615页

作者： Jinhyoung Lee Gunhoo Woo Jinill Cho Sihoon Son Hyelim Shin Hyunho Seok Min-Jae Kim Eungchul Kim Ziyang Wang Boseok Kang Won-Jun Jang Taesung Kim School of Mechanical Engineering Sungkyunkwan University (SKKU) Suwon-si Gyeonggi-do 16419 Republic of Korea. Center for Quantum Nanoscience Institute for Basic Science (IBS) Seoul 03760 Republic of Korea. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. Department of Nano Science and Technology Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. AVP Process Development Team Samsung Electronics Chungcheongnam-do Cheonan-si 31086 Republic of Korea. Department of Nano Engineering Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. Department of Physics Ewha Womans University Seoul 03760 Republic of Korea. School of Mechanical Engineering Sungkyunkwan University (SKKU) Suwon-si Gyeonggi-do 16419 Republic of Korea. tkim@skku.edu. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. tkim@skku.edu. Department of Nano Science and Technology Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. tkim@skku.edu. Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. tkim@skku.edu. Department of Nano Engineering Sungkyunkwan University Suwon-si Gyeonggi-do 16419 Republic of Korea. tkim@skku.edu.

来源：评论

学校读者我要写书评

暂无评论

Correction: Additive-mediated intercalation and surface modification of MXenes

引用

Chemical Society reviews 2022年第8期51卷 3314页

作者： Jing Zou Jing Wu Yizhou Wang Fengxia Deng Jizhou Jiang Yizhou Zhang Song Liu Neng Li Han Zhang Jiaguo Yu Tianyou Zhai Husam N Alshareef School of Environmental Ecology and Biological Engineering School of Chemistry and Environmental Engineering Key Laboratory of Green Chemical Engineering Process of Ministry of Education Engineering Research Center of Phosphorus Resources Development and Utilization of Ministry of Education Wuhan Institute of Technology Wuhan Hubei 430205 P. R. China. 027wit@***. Key Laboratory of Rare Mineral Ministry of Natural Resources Geological Experimental Testing Center of Hubei Province Wuhan Hubei 430034 P. R. China. Physical Science and Engineering Division Materials Science & Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia. husam.alshareef@kaust.edu.sa. State Key Laboratory of Urban Water Resources and Environment School of Environment Harbin Institute of Technology Harbin 150090 P. R. China. Institute of Advanced Materials and Flexible Electronics (IAMFE) School of Chemistry and Materials Science Nanjing University of Information Science & Technology Nanjing 210044 P. R. China. yizhou.zhang@***. Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials Nanjing University of Posts and Telecommunications Nanjing 210023 P. R. China. Institute of Chemical Biology and Nanomedicine (ICBN) State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Changsha 410082 P. R. China. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing State Key Laboratory of Silicate Materials for Architectures Wuhan University of Technology Wuhan Hubei 430070 P. R. China. Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 P. R. China. State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering H

Correction for 'Additive-mediated intercalation and surface modification of MXenes' by Jing Zou , , 2022, DOI: 10.1039/d0cs01487g.

关键词：

来源：评论

学校读者我要写书评

暂无评论

DeePMD-kit v2: A software package for Deep Potential models

arXiv

引用

arXiv 2023年

作者： Zeng, Jinzhe Zhang, Duo Lu, Denghui Mo, Pinghui Li, Zeyu Chen, Yixiao Rynik, Marián Huang, Li'ang Li, Ziyao Shi, Shaochen Wang, Yingze Ye, Haotian Tuo, Ping Yang, Jiabin Ding, Ye Li, Yifan Tisi, Davide Zeng, Qiyu Bao, Han Xia, Yu Huang, Jiameng Muraoka, Koki Wang, Yibo Chang, Junhan Yuan, Fengbo Bore, Sigbjørn Løland Cai, Chun Lin, Yinnian Wang, Bo Xu, Jiayan Zhu, Jia-Xin Luo, Chenxing Zhang, Yuzhi Goodall, Rhys E.A. Liang, Wenshuo Singh, Anurag Kumar Yao, Sikai Zhang, Jingchao Wentzcovitch, Renata Han, Jiequn Liu, Jie Jia, Weile York, Darrin M. Weinan, E. Car, Roberto Zhang, Linfeng Wang, Han Laboratory for Biomolecular Simulation Research Institute for Quantitative Biomedicine Department of Chemistry and Chemical Biology Rutgers University PiscatawayNJ08854 United States AI for Science Institute Beijing100080 China DP Technology Beijing100080 China Academy for Advanced Interdisciplinary Studies Peking University Beijing100871 China HEDPS CAPT College of Engineering Peking University Beijing100871 China College of Electrical and Information Engineering Hunan University Changsha China Yuanpei College Peking University Beijing100871 China Program in Applied and Computational Mathematics Princeton University PrincetonNJ08540 United States Department of Experimental Physics Comenius University Mlynská Dolina F2 Bratislava842 48 Slovakia Center for Quantum Information Institute for Interdisciplinary Information Sciences Tsinghua University Beijing100084 China Center for Data Science Peking University Beijing100871 China ByteDance Research Zhonghang Plaza No. 43 North 3rd Ring West Road Haidian District Beijing China College of Chemistry and Molecular Engineering Peking University Beijing100871 China Baidu Inc. Beijing China Key Laboratory of Structural Biology of Zhejiang Province School of Life Sciences Westlake University Zhejiang Hangzhou China Westlake AI Therapeutics Lab Westlake Laboratory of Life Sciences and Biomedicine Zhejiang Hangzhou China Department of Chemistry Princeton University PrincetonNJ08544 United States SISSA Scuola Internazionale Superiore di Studi Avanzati Trieste34136 Italy Laboratory of Computational Science and Modeling Institute of Materials École Polytechnique Fédérale de Lausanne Lausanne1015 Switzerland Department of Physics National University of Defense Technology Hunan Changsha410073 China State Key Lab of Processors Institute of Computing Technology Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China School of Electronics Engineerin

DeePMD-kit is a powerful open-source software package that facilitates molecular dynamics simulations using machine learning potentials (MLP) known as Deep Potential (DP) models. This package, which was released in 2017, has been widely used in the fields of physics, chemistry, biology, and material science for studying atomistic systems. The current version of DeePMD-kit offers numerous advanced features such as DeepPot-SE, attention-based and hybrid descriptors, the ability to fit tensile properties, type embedding, model deviation, Deep Potential - Range Correction (DPRc), Deep Potential Long Range (DPLR), GPU support for customized operators, model compression, non-von Neumann molecular dynamics (NVNMD), and improved usability, including documentation, compiled binary packages, graphical user interfaces (GUI), and application programming interfaces (API). This article presents an overview of the current major version of the DeePMD-kit package, highlighting its features and technical details. Additionally, the article benchmarks the accuracy and efficiency of different models and discusses ongoing developments. © 2023, CC BY-NC-ND.

关键词： Molecular dynamics

来源：评论

学校读者我要写书评

暂无评论

Large enhancement of spin-orbit torques in Pd/CoFeB: The role of boron

引用

Physical Review Materials 2018年第6期2卷 064408-064408页

作者： Po-Chuan Chen Yuanmin Du Bo-Yuan Yang Po-Hung Lin Guang-Yu Guo Mahendra Pakala Chih-Huang Lai Department of Materials Science and Engineering National Tsing Hua University Hsinchu 30013 Taiwan Department of Physics and Center for Theoretical Sciences National Taiwan University Taipei 10617 Taiwan Physics Division National Center for Theoretical Sciences Hsinchu 30013 Taiwan Advanced Process and Technology Development Applied Materials Inc. Santa Clara California 95050 USA

The conversion of charge current into pure spin current based on the spin Hall effect provides a new way of spin injection and manipulation in novel spintronic architectures. The realization of a large conversion efficiency between the charge and spin currents is a crucial issue for its applications. Here we report a giant enhancement of spin Hall angle (SHA) in palladium through boron engineering. We measure a large SHA of 0.16 in palladium, with perpendicular magnetic anisotropy in the Pd/CoFeB-based structure compared to the Pd/CoFe-based structure (SHA=0.02). Combined with theoretical calculations, it is found that both intrinsic and extrinsic spin Hall effects have been significantly enhanced through the introduction of boron. Taking into account the incorporation of boron in the thin films, the enhanced SHA is attributed to significant microscopic and electronic changes in the Pd host metal. This finding illustrates a crucial role of boron in manipulating spin-orbit torques. Together with high conductivity and long spin diffusion length, this work makes Pd a promising candidate for spintronic devices with magnetization switching by current pulse injection.

关键词： Magnetism Spintronics

来源：评论

学校读者我要写书评

暂无评论

Effect of Tryptone Concentration on Cyclodextrin Glucanotranferase (CGTase) Excretion and Cell Lysis of Immobilized Recombinant Escherichia coli

引用

IOP Conference Series: Materials Science and Engineering 2020年第1期991卷

作者： R C Man R M Illias S M Shaarani Z I M Arshad S K A Mudalip S Z Sulaiman S F Z Mohamad Fuzi A A Abdullah Department of Chemical Engineering College of Engineering Universiti Malaysia Pahang Lebuhraya Tun Razak 26300 Gambang Pahang Malaysia School of Chemical and Energy Engineering Faculty of Engineering Universiti Teknologi Malaysia 81310 Skudai Johor Malaysia Faculty of Chemical and Process Engineering Technology College of Engineering Universiti Malaysia Pahang Lebuhraya Tun Razak 26300 Gambang Pahang Malaysia Centre of Excellence for Advanced Research in Fluid Flow (CARIFF) Universiti Malaysia Pahang Lebuhraya Tun Razak 26300 Gambang Pahang Malaysia. Faculty of Science Technology and Human Development Universiti Tun Hussein Onn Malaysia 86400 Batu Pahat Johor Malaysia School of Mechatronic Engineering Universiti Malaysia Perlis Pauh Putra Campus 02600 Arau Perlis Malaysia

The recombinant enzyme excretion into the culture medium provides significant advantages over cytoplasmic expression. Nevertheless, the problems encountered during the excretion of recombinant enzyme are the plasmid instability and occurrence of cell lysis. Various attempts have been made to improve the recombinant enzyme excretion and plasmid stability with the low occurrence of cell lysis. The approaches include the modification of the nitrogen sources in the medium such as tryptone, the use of cell immobilization system and lowering the induction temperature. In the present study, the effects of different tryptone concentrations (1, 5, 10, 20 and 30 g/L) as nitrogen source in super optimal broth (SOB) medium on CGTase excretion and plasmid stability as well as cell lysis of the immobilized cell were studied. The recombinant E. coli was immobilized on polyvinylidene fluoride polymer (PVDF) hollow fiber membrane. The immobilized cells were expressed using 0.011 mM IPTG at 25°C, 200 rpm of agitation rate and pH 8.8 for 24 h of post induction time. The use of low tryptone concentration (5 g/l) produced high CGTase excretion (758.64 U/ml) and increased the plasmid stability (86% increment) with reduction of cell lysis (90% reduction) in comparison with the initial tryptone concentration (20 g/l). Hence, low concentration of tryptone could reduce the cost for CGTase production due to low amount of tryptone used in the fermentation process.

关键词：

来源：评论

学校读者我要写书评

暂无评论

STT-RAM Device Performance Improvement Using CMP process

STT-RAM Device Performance Improvement Using CMP Process

引用

SEMI advanced Semiconductor Manufacturing Conference

作者： Sajjad Hassan Lin Xue Jaesoo Anh Mahendra Pakala Garrett Sin Motoya Okazaki Advanced Process and Technology Development Applied Materials Inc. Santa Clara USA

ISBN: (纸本)9781509054497

Current scaling challenges for memory technology have led to fast-paced development of alternative memory technologies. STT-RAM is the leading potential candidate to replace static RAM, dynamic RAM and embedded memory due to its non-volatility, high speed, and unlimited endurance. The performance of STT-MRAM such as memory signal strength (TMR) and data retention (coercivity) is primarily determined by the MTJ film. The deposition of MTJ film requires an under-layer with Angstrom-scale smoothness to achieve good device performance. The Applied Materials Reflexion? LK Prime?CMP system was used to develop a CMP process to achieve such Angstrom-scale smoothness on the patterned bottom plug-oxide boundary. This degree of smoothness on the bottom plug helped to significantly improve the device performance.

关键词： STT-RAM CMP Memory

来源：评论

学校读者我要写书评

暂无评论

Green Biomaterials: fundamental principles

引用

Green Biomaterials 2023年第1期1卷

作者： Navid Rabiee Mehmet R. Dokmeci Ali Zarrabi Pooyan Makvandi Mohammad Reza Saeb Hassan Karimi-Maleh Shima Jafarzadeh Ceren Karaman Yusuke Yamauchi Majid Ebrahimi Warkiani Sidi A. Bencherif Geeta Mehta Miharu Eguchi Ajeet Kaushik Mohammad-Ali Shahbazi Ana Cláudia Paiva-Santos Jacek Ryl Eder C. Lima Michael R. Hamblin Rajender S. Varma YunSuk Huh A. T. Ezhil Vilian Piyush Kumar Gupta Sandeep Kumar Lakhera Kavindra Kumar Kesari Yu-Ting Liu Mohammadreza Tahriri Ganji Seeta Rama Raju Mohsen Adeli Ali Mohammadi Jianglin Wang Mohd Zahid Ansari Tejraj Aminabhavi Houman Savoji Gautam Sethi Tomasz Bączek Agata Kot-Wasik Marcela Elisabeth Penoff Abdorreza Mohammadi Nafchi Justyna Kucinska-Lipka Masoumeh Zargar Mohsen Asadnia Amir Reza Aref Moein Safarkhani Milad Ashrafizadeh Reddicherla Umapathi Amir Ghasemi Milica Radisic a Centre for Molecular Medicine and Innovative Therapeutics Murdoch University Perth WA Australiab School of Engineering Macquarie University Sydney New South Wales Australia c Terasaki Institute for Biomedical Innovation (TIBI) Los Angeles CA90024 USA d Department of Biomedical Engineering Faculty of Engineering and Natural Sciences Istinye University Sariyer Istanbul Turkey e The Quzhou Affiliated Hospital of Wenzhou Medical University Quzhou People’s Hospital Zhejiang Quzhou Chinaf School of Engineering Institute for Bioengineering The University of Edinburgh Edinburgh United Kingdom g Department of Polymer Technology Faculty of Chemistry Gdańsk University of Technology Gdańsk Poland h School of Resources and Environment University of Electronic Science and Technology of China 611731 Xiyuan Ave Chengdu P. R. Chinai School of Engineering Lebanese American University Byblos Lebanon j School of Engineering Edith Cowan University Joondalup WA Australia k Department of Electricity and Energy Akdeniz University Antalya Turkey l Australian Institute for Bioengineering and Nanotechnology (AIBN) and School of Chemical Engineering The University of Queensland Brisbane QLD Australiam Department of Materials Process Engineering Graduate School of Engineering Nagoya University Nagoya Japan n School of Biomedical Engineering University of Technology Sydney Sydney NSW Australiao Faculty of Science Institute for Biomedical Materials and Devices (IBMD) University of Technology Sydney Sydney NSW Australia p Chemical Engineering Department Northeastern University Boston MA USAq Department of Bioengineering Northeastern University Boston MA USAr Harvard John A. Paulson School of Engineering and Applied Sciences Harvard University Cambridge MA USA s Department of Biomedical Engineering University of Michigan Ann Arbor MI USAt Department of Materials Science and Engineering University of Michigan Ann Arbor MI USAu Macromolecular Science and Engineering

来源：评论

学校读者我要写书评

暂无评论

Reduction of Wafer Arcing during High Aspect Ratio Etching

Reduction of Wafer Arcing during High Aspect Ratio Etching

引用

SEMI advanced Semiconductor Manufacturing Conference

作者： Zusing Yang Min-Feng Hung Kuo-Pin Chang Chih-Yao Lin Sheng-Yuan Chang Hong-Ji Lee Nan-Tzu Lian Tahone Yang Kuang-Chao Chen Chih-Yuan Lu Advanced Module Process Development Div. Macronix International Co. Ltd. Technology Development Center Hsinchu Taiwan ROC

We present several efforts for arcing reduction during high aspect ratio etching. Strategies including pulsing etching adjustments, ex situ multi-cyclic etch approach, flush step incorporation, E-chuck voltage operati... 详细信息

ISBN: (纸本)9781509054497

关键词： Arcing issue high aspect ratio trench etch 3D NAND

来源：评论

学校读者我要写书评

暂无评论

Pattern damage and slurry behavior analysis of CMP process by mechanical and fluid simulations-Yi-Sheng Cheng

Pattern damage and slurry behavior analysis of CMP process b...

引用

Joint e-Manufacturing and Design Collaboration Symposium, eMDC 2015 and International Symposium on Semiconductor Manufacturing, ISSM 2015

作者： Yang, Wen-Cheng Luo, Shing-Ann Huang, Yukai Hung, Yung-Tai Luoh, Tuung Yang, Lin-Wuu Yang, Tahone Chen, Kuang-Chao Macronix International Co. Ltd Technology Development Center Advanced Module Process Development Div. Science Park No. 19 Li-Hsin Road Hsin-chu Taiwan

ISBN: (纸本)9789869171519

Chemical-mechanical polishing (CMP) technique is widely applied in the semiconductor industry nowadays. The CMP working mechanism is the interaction of the chemical reaction and mechanical polishing to remove the undesired materials in the circumstance with the feeding slurry and the polishing pad. As the device scale shrink, defect and uniformity control have become the major challenge and critical issues of CMP process. Since the CMP performance strongly depends on the consumable parts with complex process parameters, it may take plenty of consumable cost and working hours to improve the processes issues. Therefore the finite element method for the CMP process simulation is adopted to improve the efficiency of CMP process tuning in recent years [1]. © 2015 Taiwan Semiconductor Industry Association.

关键词： Chemical mechanical polishing

来源：评论

学校读者我要写书评

暂无评论

Dishing and erosion amount prediction according pattern density calculation algorithm in 3D design layout-Kuang-Wei Chen

Dishing and erosion amount prediction according pattern dens...

引用

Joint e-Manufacturing and Design Collaboration Symposium, eMDC 2015 and International Symposium on Semiconductor Manufacturing, ISSM 2015

作者： Kao, Hsiao-Feng Chou, Tung-He Wu, Syue-Ren Chen, Chun-Fu Luoh, Tuung Yang, Ling-Wuu Yang, Tahone Chen, Kuang-Chao Macronix International Co. Ltd Technology Development Center Advanced Module Process Development Div. Science Park No.19 Li-Hsin Road Hsin-chu Taiwan

ISBN: (纸本)9789869171519

Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization performance is influenced by topography characteristics, line/space width, pattern density, slurry chemistry, rotation speed, PAD type, force/pressure, etc. However, as device continuous shrink, CMP process becomes more challengeable to achieve planarization. There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area. Wide trenches or open structures usually enhance the dishing issue, while dense trenches lead to more erosion. Nitride erosion exposes the underlying active devices will lead to device failure;on the other hand, oxide dishing results in poor isolation. © 2015 Taiwan Semiconductor Industry Association.

关键词： Erosion

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：