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检索条件"机构=Advanced Process Technology Development Group"
64 条 记 录,以下是11-20 订阅
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Evaluation of feedstock for powder injection molding
Evaluation of feedstock for powder injection molding
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作者: Jang, Jin Man Lee, Hyeongjae Lee, Wonsik Kim, Yong-In Ko, Se-Hyun Kim, Jong Ha Lee, Jai-Sung Choi, Joon-Phil Advanced Fusion Process R and D Group Korea Institute of Industrial Technology Incheon 406-840 Korea Republic of Adnaced Development Team PIM KOREA Gyeongsan Gyeongbuk 712-831 Korea Republic of Department of Metallurgy and Materials Science Hanyang University-ERICA Ansan Gyeonggi 426-791 Korea Republic of
Methods to evaluate powder injection molding feedstock without performing the complete processing were developed to reduce the developmentto- commercialization cycle time for feedstock. The mixing homogeneity of the p... 详细信息
来源: 评论
A novel PSWT-DTW approach for analyzing pseudo-periodic signals
A novel PSWT-DTW approach for analyzing pseudo-periodic sign...
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IEEE Point-of-Care Healthcare Technologies (PHT)
作者: Aniruddha Joshi Sharat Chandran V.K. Jayaraman B.D. Kulkarni Department of Computer Science and Engineering Indian Institute of Technology Bombay Mumbai India Scientific and Engineering Computing Group Centre for Development of Advanced Computing Pune India Chemical Engineering and Process Development Division National chemical Laboratory Pune India
Pseudo-periodic signals are rampant in biomedical applications but are difficult to analyze. One approach is to compute time domain parameters of each individual cycle in the pseudo-periodic signal. The classic approa... 详细信息
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Grain Engineering Approaches for High-Performance Polysilicon Thin-Film Transistor Fabrication
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MRS Online Proceedings Library 2011年 第1期508卷 55-65页
作者: G. K. Giust T. W. Sigmon Memory Technology & Integration LSI Logic Santa Clara USA Advanced Process and Development Group Lawrence Livermore National Laboratory Livermore USA
Using an approach we call “grain engineering,” we discuss several techniques to control grain growth during excimer laser annealing, to create low-defect density polysilicon films. By adjusting of laser parameters, ...
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Design intent utilization for lithography compliance check and layout refinement to improve manufacturability
Design intent utilization for lithography compliance check a...
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IEEE International Symposium on Semiconductor Manufacturing
作者: Sachiko Kobayashi Atsuhiko Ikeuchi Kazunari Kimura Toshiya Kotani Satoshi Tanaka Suigen Kyoh Shimon Maeda Soichi Inoue Advanced Lithography Process Technology Department Device Process Development Center Corporate Research & Development Center Toshiba Corporation Japan Design Methodology Development Group Design Technology Development Department Analog & Imaging Ic Division Toshiba Corporation Semiconductor Company Japan
A collection of slides from the authors conference presentation about the design intent utilization for lithography compliance check and layout refinement to improve manufacturability is presented.
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Robust porous SiOCH (k=2.5) for 28nm and beyond technology node
Robust porous SiOCH (k=2.5) for 28nm and beyond technology n...
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IEEE International Conference on Interconnect technology
作者: Janghee Lee Sang Hoon Ahn Insun Jung Kyu-Hee Han Gyeonghee Kim Sang-Don Nam Woo Sung Jeon Byeong Hee Kim Gil Heyun Choi Siyoung Choi Ho-Kyu Kang Chilhee Chung Process Development Team Semiconductor Research and Development Center Samsung Electronics Company Limited Hwasung Gyeonggi South Korea AE Center Analytical Engineering Group Samsung Advanced Institute of Technology Yongin si Gyeonggi South Korea
Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been wid... 详细信息
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Robust porous SiOCH (k=2.5) for 28nm and beyond technology node
Robust porous SiOCH (k=2.5) for 28nm and beyond technology n...
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IEEE International Interconnect technology Conference and Materials for advanced Metallization
作者: Lee, Janghee Ahn, Sang Hoon Jung, Insun Han, Kyu-Hee Kim, Gyeonghee Nam, Sang-Don Jeon, Woo Sung Kim, Byeong Hee Choi, Gil Heyun Choi, Siyoung Kang, Ho-Kyu Chung, Chilhee Process Development Team Semiconductor RandD Center Samsung Electronics Co. Ltd. San#16 Banwol-Dong Hwasung City Gyeonggi-Do 445-701 Korea Republic of Analytical Engineering Group AE Center Samsung Advanced Institute of Technology Nongseo-Dong Kiheung Ku Yongin-City Gyeonggi-Do 446-712 Korea Republic of
Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been wid... 详细信息
来源: 评论
Damage detection of composite structures by life-cycle strain mapping using FBG sensors
Damage detection of composite structures by life-cycle strai...
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SAMPE Tech 2011 Conference and Exhibition: Developing Scalable Materials and processes for Our Future
作者: Takahashi, Ichiya Sekine, Kazushi Kume, Masami Takeya, Hajime Iwahori, Yutaka Shu, Minakuchi Takeda, Nobuo Enomoto, Kiyoshi Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Hommachi Amagasaki Hyogo 661-8661 Japan Advanced Composite Group Aerospace Research and Development Japan Aerospace Exploration Agency 6-13-1 Osawa Mitaka Tokyo 181-0015 Japan Graduate School of Frontier Sciences University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan Materials Process Technology Center 3-5-8 Shibakoen Minato-ku Tokyo 105-0011 Japan
We propose structural health monitoring (SHM) technology based on the strain mapping of composite airframe structures through their life cycles including the stages of molding, machining, assembling, operation and mai... 详细信息
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0.25μm, 20V High Performance Complementary Bipolar Transistor with Dual EPI and Oxide-Filled Deep Trench Isolation for High Frequency DC-DC Converters
0.25μm, 20V High Performance Complementary Bipolar Transist...
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IEEE International Symposium on Power Semiconductor Devices and ICs
作者: T. Kwon S. Haynie A. Sadovnikov P. Allard J. Strout A. Strachan Advanced Process Technology Development Group National Semiconductor Santa Clara CA USA
Power supply designers must increase the switching frequency of converters to meet industry demands for small sizes. In order to handle high switching frequency, a closed-loop DC-DC converter needs a high-speed error ... 详细信息
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Life cycle strain mapping of composite airframe structures for health monitoring by using FBG sensors
Life cycle strain mapping of composite airframe structures f...
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作者: Takahashi, Ichiya Sekine, Kazushi Takeya, Hajime Iwahori, Yutaka Minakuchi, Shu Takeda, Nobuo Koshioka, Yasuhiro Advanced Technology R and D Center Mitsubishi Electric Corporation 8-1-1 Tsukaguchi-Hommachi Amagasaki Hyogo 661-8661 Japan Advanced Composite Group Aerospace Research and Development Directorate Japan Aerospace Exploration Agency 6-13-1 Osawa Mitaka Tokyo 181-0015 Japan Graduate School of Frontier Sciences University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan Materials Process Technology Center 3-5-8 Shibakoen Minato-ku Tokyo 105-0011 Japan
The purpose of this research is to develop structural health monitoring technology based on the strain mapping of composite airframe structures through their life cycles. We conducted the evaluation tests for damage d... 详细信息
来源: 评论
Robust spin-on glass gap-fill process technology for sub-30nm interlayer dielectrics
Robust spin-on glass gap-fill process technology for sub-30n...
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IEEE International Conference on Interconnect technology
作者: Kyung-Mun Byun Deok-Young Jung Jun-Won Lee Seungheon Lee Hyongsoo Kim Mun-Jun Kim Eunkee Hong Mansug Gang Seok-Woo Nam Joo-Tae Moon Chilhee Chung Jung-Hoo Lee Hyo-Sug Lee Process Development Team Semiconductor Research and Development Center USA Manufacturing Technology Team Infra Technology Service Center Semiconductor Business Samsung Electronics Company Limited Hwasung Gyeonggi South Korea Material Application Group Materials Research Center Samsung Advanced Institute of Technology Samsung Electronics Company Limited Yongin si Gyeonggi South Korea
A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILD) in sub-30 nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating i... 详细信息
来源: 评论