检索结果-内蒙古大学图书馆

2010 IEEE International Interconnect technology Conference, IITC 2010

作者： Byun, Kyung-Mun Jung, Deok-Young Lee, Jun-Won Lee, Seungheon Kim, Hyongsoo Kim, Mun-Jun Hong, Eunkee Gang, Mansug Nam, Seok-Woo Moon, Joo-Tae Chung, Chilhee Lee, Jung-Hoo Lee, Hyo-Sug Process Development Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Hwasung-City Gyeonggi-Do 445-701 Korea Republic of Manufacturing Technology Team Infra Technology Service Center Samsung Electronics Co. Ltd. San#16 Banwol-Dong Hwasung-City Gyeonggi-Do 445-701 Korea Republic of Material Application Group Materials Research Center Samsung Advanced Institute of Technology San#14 Nongseo-Dong Giheung-Gu Yongin-City Gyeonggi-Do 449-712 Korea Republic of

ISBN: (纸本)9781424476763

A highly robust gap-fill process technology of spin-on glass (SOG) was developed for the interlayer dielectric (ILD) in sub-30nm devices. We revealed that the filling behavior of SOG within gaps during spin-coating is mainly dependent on the capillary effect. The highly wettable surface treatment prior to SOG coating was found to enhance the gap-fill performance remarkably. This technique plays a key role in maximizing capillary effect by raising surface wettability. The filling capability was also improved by optimization of baking temperature to minimize the viscosity of SOG. It was finally found that the defects of contact bridges due to poor filling of SOG were reduced to be almost free by those unique process refinements. ©2010 IEEE.

关键词： Coatings

来源：评论

学校读者我要写书评

暂无评论

A NEW NON-INVASIVE METHOD FOR VALVE STICTION DECTION USING WAVELET technology

引用

Journal of Electronics(China) 2009年第5期26卷 673-680页

作者： Xu Zhanyang Charles Zhan Zhang Shunyi Institute of Information Network Technology Nanjing University of Posts ＆ Telecommunications Nanjing 210003 China Department of Computer Sciences~ Nanjing University of Information Science and Technology Nanjing 210044 China Advanced Process Control Research and Development Group Honeywell Process Solutions Phoenix AZ 85027 USA

In this letter, we present a novel approach of valve stiction detection using wavelet technology. A new non-invasive method is developed with the closed-loop normal operating data. The redundant dyadic discrete wavelet transform is used to decompose the data at different resolution scales. Based on the Lipschitz regularity theory, wavelet coefficients analysis across scales is performed to detect the jumps in the controlled variables. Adaptive wavelet de-noising is then applied to the data. Features of the valve stiction patterns are extracted from the de-noised data and the valve stiction probability is calculated.

关键词： Valve stiction Wavelet de-noising Jump Features extraction

来源：评论

学校读者我要写书评

暂无评论

Influence of moisture uptake in porous PAr film on electrical properties

Influence of moisture uptake in porous PAr film on electrica...

引用

24th Session of the advanced Metallization Conference 2007, AMC 2007

作者： Nakamura, N. Matsunaga, N. Watanabe, K. Miyajima, H. Enomoto, Y. Okada, N. Shibata, H. Advanced BEOL Technology Department Center for Semiconductor Research and Development Semiconductor Company Toshiba Corporation Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Semiconductor Technology Development Division Semiconductor Business Group Sony Corporation Advanced Device Development Division NEC Electronics Corporation 8 Shinsugita-cho Isogo-ku Yokohama Kanagawa 235-8522 Japan

ISBN: (纸本)9781558999923

In PAr/SiOC hybrid dual damascene structure, low-k polyarylene (PAr) films applied as trench layer material were damaged by plasma process and the damaged films absorbed moisture easily. The phenomenon was similar to that in the case of SiOC films applied as via layer material. It is confirmed that the moisture uptake degraded via properties. To achieve good electrical properties in the case of using porous PAr films, it is necessary to minimize the process damage. Optimization of metal dummy pattern is found to be one of the solutions to the issue of PAr damage and moisture uptake. © 2008 Materials Research Society.

关键词： Moisture

来源：评论

学校读者我要写书评

暂无评论

Vertical structure NAND flash array integration with paired FinFET multi-bit scheme for high-density NAND flash memory application

Vertical structure NAND flash array integration with paired ...

引用

2008 Symposium on VLSI technology Digest of Technical Papers, VLSIT

作者： Koo, June-Mo Yoon, Tae-Eung Lee, Taehee Byun, Sungjae Jin, Young-Gu Kim, Wonjoo Kim, Sukpil Park, Jongbong Cho, Junseok Choe, Jeong-Dong Lee, Choong-Ho Jong, Jin Lee Han, Je-Woo Kang, Yunseung Park, Sangjun Kwon, Byoungho Jung, Yong-Ju Yoo, Inkyoung Park, Yoondong Samsung Advanced Institute of Technology San 14-1 Giheung-Gu Yongin-City Gyeonggi-Do 449-712 Korea Republic of Advanced Technology Development Team 2 Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of DRAM Process Architecture Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of Process Development Team Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of FAB Process Technology Development Group 1 Semiconductor R and D Center Samsung Electronics Co. Ltd. Korea Republic of

ISBN: (纸本)9781424418053

Multi-bit Vertical Structure NAND (VsNAND) Flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array integration issues regarding the sub-10nm vertical structure fin could be solved by proper choices of isolation material, ion implantation, and word line patterning. VsNAND Flash array cells with TANOS (TaN/Al2O 3/SiN/SiOx/Si) charge trap structure show possibilities of acceptable program/erase properties and cell Vth distribution characteristics for multi-level NAND Flash application. © 2008 IEEE.

关键词： FinFET

来源：评论

学校读者我要写书评

暂无评论

Control of pulverized coal oxy-combustion systems

Control of pulverized coal oxy-combustion systems

引用

17th Annual Joint ISA POWID/EPRI Controls and Instrumentation Conference and 50th Annual ISA POWID Symposium 2007

作者： McDonald, Denny K. Zadiraka, Allan J. Technology Group Advanced Technology Development and Design Babcock and Wilcox Company Barberton OH 44203 United States Technology Group Power and Process Control Babcock and Wilcox Company Barberton OH 44203 United States

ISBN: (纸本)9781604233292

With the vast reserves of coal that exist in the world, coal will continue to be a prime source for electricity generation for the foreseeable future. However, fossil fuel combustion is a major contributor to the greenhouse gas emissions which is of increasing concern. Continued use of fossil fuels for electrical generation will require reduction of these emissions. While part of this reduction will be achieved through more efficient power plants that reduce the emissions per unit of electricity produced, capture and use or sequestration of CO2 emissions from utility boilers appears to be required to achieve the targeted reductions. A potentially more efficient and less costly alternative to Integrated Gasification Combined Cycle (IGCC) plants under development for this purpose is Oxy-coal combustion. In this concept, oxygen mixed with recycled flue gas replaces the normal combustion air resulting in a flue gas that consists primarily of CO2. The concentrated CO 2 stream reduces the cost and energy requirements needed for its capture and sequestration. The control of the oxygen to the combustion process, recycled flue gas flow, and impact on other processes such as heat transfer in the boiler and gas stream constituents offers a unique set of control requirements which will be discussed. Copyright 2007 ISA. All Rights Reserved.

关键词： Flue gases

来源：评论

学校读者我要写书评

暂无评论

Material design of porous low-k materials for 45 nm node interconnects

Material design of porous low-k materials for 45 nm node int...

引用

advanced Metallization Conference 2006

作者： Watanabe, K. Miyajima, H. Shimada, M. Nakamura, N. Shimayama, T. Enomoto, Y. Yano, H. Yoda, T. Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan Advanced BEOL Technology Department Center for Semiconductor Research and Development Toshiba Corporation Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan Semiconductor Technology Development Group Semiconductor Business Unit Sony Corporation Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan

ISBN: (纸本)9781558999473

In order to realize highly reliable dual damascene (DD) structure for 45 mn node interconnects, porous PAr (Poly-arylene)/porous MSX (Methyl-siloxane) stack structure was developed. Porous MSX film, coated by spin-on technique, is determined by the balance of plasma resistance and mechanical strength. It was clarified that the combination of methylene bridge (Si-CH2-Si) addition and eBeam cure was very effective to achieve highly secure MSX material for via layer. It was concluded that dense differ SOG with high carbon content between p-PAr/p-MSX films relieves the plasma damage of the trench bottom in hybrid DD scheme. Excellent material design of the trench-layer, the via-layer and the differ-layer materials made it possible to realize high performance Cu/low-k interconnects for 45 mn wide.

关键词： Optical interconnects

来源：评论

学校读者我要写书评

暂无评论

A highly reliable cu interconnect technology for memory device

A highly reliable cu interconnect technology for memory devi...

引用

10th Annual International Interconnect technology Conference (IITC)

作者： Lee, H. B. Hong, J. W. Seong, G. J. Lee, J. M. Park, H. Baek, J. M. Choi, K. I. Park, B. L. Bae, J. Y. Choi, G. H. Kim, S. T. Chung, U. I. Moon, J. T. Oh, J. H. Son, J. H. Jung, J. H. Hah, S. Lee, S. Y. Process Development Team Memory Division Samsung Electronics Co. Ltd. 449-711 South Korea QA Group Memory Division Samsung Electronics Co. Ltd. 449-711 South Korea Fab Advanced Technology Development Team System LSI Division Samsung Electronics Co. Ltd. 449-711 South Korea

ISBN: (纸本)9781424410699

This paper describes the development of Cu interconnect technology for memory devices. A highly reliable sub 50nm Cu interconnect lines were successfully fabricated by using optimized iPVD barrier/seed and electroplating process. The resistivity of Cu lines was reviewed with that of Al for extendibility of Cu. The Cu TDDB lifetime in user conditions was investigated to confirm the reliability of Cu process integration. It can be predicted that Cu metallization can satisfy the requirements of sub 50nm trench, pattern, which are lower resistance than Al and good reliabilities.

关键词： Optical interconnects

来源：评论

学校读者我要写书评

暂无评论

Silylation gas restoration subsequent to all-in-one RIE process without air exposure for porous low-k SiOC/Copper dual-damascene interconnects

Silylation gas restoration subsequent to all-in-one RIE proc...

引用

advanced Metallization Conference 2006

作者： Kojima, A. Nakamura, N. Matsunaga, N. Hayashi, H. Kubota, K. Asako, R. Mackawa, K. Shibata, H. Yoda, T. Ohiwa, T. Process and Manufacturing Engineering Center Semiconductor Company Toshiba Corporation Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan Advanced BEOL Technology Dept. Center for Semiconductor R and D Toshiba Corporation Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan Fundamental Process Group R and D Division Tokyo Electron AT Ltd. Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan Leading Edge Process Development Center Tokyo Electron Ltd. Yokohama Kanagawa 235-8522 8 Shinsugita-cho Japan

ISBN: (纸本)9781558999473

BEOL process using Cu/porous low-k film was studied, focusing on the effect of wafer exposure to ambient air after the all-in-one RIE process and preceding the restoration process using the vaporized silylation gas. It was found that excluding air exposure before the restoration step, the stress induced voiding (SiV) reliability improved. It is considered that performing the silylation step subsequent to the all-in-one RIE step without air exposure prevented the moisture absorption of the porous SiOC film which suppressed barrier metal (BM) oxidation. This effect may be the cause of the improved reliability. This process is promising for the BEOL process using Cu/porous low-k film.

关键词： Optical interconnects

来源：评论

学校读者我要写书评

暂无评论

A Highly Reliable Cu Interconnect technology for Memory Device

A Highly Reliable Cu Interconnect Technology for Memory Devi...

引用

IEEE International Conference on Interconnect technology

作者： H.B. Lee J.W. Hong G.J. Seong J.M. Lee H. Park J.M. Baek K.I. Choi B.L. Park J.Y. Bae G.H. Choi S.T. Kim U.I. Chung J.T. Moon J.H. Oh J.H. Son J.H. Jung S. Hah S.Y. Lee Process Development Team Memory Division Samsung Electronics Company Limited South Korea QA Group Memory Division Samsung Electronics Company Limited South Korea Fab Advanced Technology Development Team System LSI Division Samsung Electronics Company Limited South Korea

This paper describes the development of Cu interconnect technology for memory devices. A highly reliable sub 50 nm Cu interconnect lines were successfully fabricated by using optimized iPVD barrier/seed and electroplating process. The resistivity of Cu lines was reviewed with that of Al for extendibility of Cu. The Cu TDDB lifetime in user conditions was investigated to confirm the reliability of Cu process integration. It can be predicted that Cu metallization can satisfy the requirements of sub 50 nm trench pattern, which are lower resistance than Al and good reliabilities.

关键词： Testing Conductivity Large scale integration Metallization Delay Etching Hafnium Moon Energy management Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)

Novel Heat Dissipating Cell Scheme for Improving a Reset Dis...

引用

Symposium on VLSI technology

作者： D.H. Kang J.S. Kim Y.R. Kim Y.T. Kim M.K. Lee Y.J. Jun J.H. Park F. Yeung C.W. Jeong J. Yu J.H. Kong D.W. Ha S.A. Song J. Park Y.H. Park Y.J. Song C.Y. Eum K.C. Ryoo J.M. Shin D.W. Lim S.S. Park J.H. Kim W.I. Park K.R. Sim J.H. Cheong J.H. Oh J.I. Kim Y.T. Oh K.W. Lee S.P. Koh S.H. Eun N.B. Kim G.H. Koh G.T. Jeong H.S. Jeong Kinam Kim Advanced Technology Development Team 2 Yongin-City Gyunggi-Do South Korea Semi. Business Samsung Electronic Co. Ltd. Yongin-City Gyunggi-Do South Korea CAE Yongin-City Gyunggi-Do South Korea Analytical Engineering Center Samsung Advanced Institute of Technology Yongin-City Gyunggi-Do South Korea Process Analysis & Control Group Memory R&D Div. Yongin-City Gyunggi-Do South Korea

ISBN: (纸本)4900784036;97

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge 2 Sb 2 Te 5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

关键词： Phase change random access memory Crystallization Degradation Amorphous materials Writing Resistance heating Temperature Phase change materials Switches Cooling

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：